FTIR study of CO and NO adsorbed on nitrided CoMo/Al2O3 catalysts

The states of surface Co and Mo sites on nitrided CoMo supported on Al2O3 were studied by adsorption of CO and NO as IR probe molecules. Three IR bands at 2200, 2060 and 2025 cm(-1) were detected for adsorbed CO. These bands can be respectively attributed to the surface NCO species as a result of CO adsorbed on surface N sites, and linearly adsorbed CO on surface Co and Mo sites in low valence states. The addition of cobalt to the Mo nitride diminishes the band at 2200 cm(-1). This may be due to either the change of the surface structure of the supported nitride, or the formation of a new phase, CoxMoyNz, as suggested in the literature Kim et al., Catal. Lett., 1997, 43, 91 and Logan et al., Catal. Lett., 1998, 56, 165. Comparison of CO and NO adsorption on Mo2N/Al2O3 and CoMoNx/Al2O3 indicates that the presence of cobalt can promote the reduction and nitridation of Mo.

网络成瘾者心率变异性频谱特征及人格相关因素的研究

The aim of this research is to explore heart rate variability frequency field characteristics and personality influential factors of internet addicts by experimentation and questionnaire. Two studies were carried out: study 1 was to explore the pathological and mental mechanism of internet addicts by heart rate variability physiological index and EPQ and internet addiction scale. Study 2 was to compare the personality and mental characteristics between internet addicts and Non-addicts. The testees were 30 internet addict schoolboys who were in-patient and 43 schoolboys who accorded with qualification from grade 2 in senior high school and sophomore. It is found that: 1、 Internet addicts have obviously lower HFNU than Non-addicts， but have obviously higher LFNU and LF/HF ratio than Non-addicts. Internet addicts have dysfunction in their sympathetic and parasympathetic system; 2、 Internet addicts and Non-addicts have no significant difference in their EPQ except their lying point, but the nervous characteristics of EPQ of internet addicts have influence on their equipoise of parasympathetic system, that is to say when the score of nervous characteristics of EPQ become higher, equipoise of parasympathetic system become worse and worse. However the EPQ personality characteristics of non-addicts have no influence on their sympathetic and parasympathetic system. 3、 The extent of internet addiction of the internet addicts is independent of their equipoise of parasympathetic system, but non-addicts use internet more time, their equipoise of parasympathetic system become lower, there is the significant difference in the neurophysiology between internet addicts and non-addicts. That is to say internet environment is safe to most adolescent, they can make use of internet environment accurately, but internet addicts, their physiological and psychological level has changed to a certain, need to be treated.； 4、 Serious internet game addicts have the metal characteristics of low social support, low purpose in life and low adventure; 5、 The objective support、support utilization of social support questionnaire and sensation seeking characteristics have prognosticative function for internet addiction degree; 6、 Serious internet game addicts have the metal characteristics of low social support, low lying particularity, they are inclined to self abandonment. Serious internet game addicts of low N characteristic have high sensation seeking characteristic, and at the same E personality foundation, they also seek new stimulus with higher intension. There is a prompt that we should pay attention to internet addicts’ personality so that obtain better curative effect for internet addiction therapy.

Upconversion properties of TM3+/Yb3+ codoped fluorophosphate glasses with low phonon density of states

Fluorophosphate glasses codoped with Tm3+ and Yb3+ were prepared and their thermal stability, phonon states, and upconversion properties were studied. It is found that the increment of phosphate content is good for the thermal stability but increases the phonon density of states. However, the phonon density of states of these fluorophosphate glasses is very low due to the low phosphate content in their composition. The upconversion luminescence spectra were measured under excitation of 970 nm laser diode, and the intense blue (476 nm) and near infrared (794 nm) emission were simultaneous obtained at room temperature. The sensitizing mechanisms of Yb3+ to Tm3+ for blue and red emission contain both sequential and cooperative sensitization. The near infrared emission is a two-photon upconversion process. These researches suggest that when the phosphate content in the composition is low enough, fluorophosphate glass can be suitable host material of Tm3+ codoped with Yb3+ for blue and near infrared upconversion luminescence. (c) 2005 Elsevier B.V All rights reserved.

A study of low-energy ion induced radiolysis of thiol-containing amino acid cysteine in the solid and aqueous solution states

The radiolysis of cysteine under plasma discharge and irradiation of low-energy Ion beam was investigated. The damage of cysteine in aqueous solution under discharge was assessed via the acid ninhydrin reagent and the yield of cystine produced from the reaction was analyzed by FTIR In addition, the generation of hydrogen sulfide was also identified The destruction of solid cysteine under low-energy ion beam irradiation was estimated via monitoring IR bands of different functional groups (-SH, -NH3, -COO-) of cysteine. and the production of cystine from ion-irradiated solid cysteine after dissolution in water was also verified These results may help us to understand the inactivation of sulphydryl enzymes under direct and indirect interaction with the low-energy ion irradiation (C) 2010 Elsevier B V All rights reserved.

Photosynthetic responses to inorganic carbon in Ulva lactuca under aquatic and aerial states

Intertidal macroalgae experience continual alternation of photosynthesis between aquatic state at high tide and aerial state at low tide. The comparative photosynthetic responses to inorganic carbon were investigated in the common intertidal macroalga Ulva lactuca L. along the coast of Shantou between aquatic and aerial state. The inorganic carbon dissolved in seawater at present could fully (at 10 degreesC or 20 degreesC) or nearly (at 30 degreesC) saturate the aquatic photosynthesis of U. lactuca. However, the aerial photosynthesis was limited by current ambient atmospheric CO2 level, and such a limitation was more severe at higher temperature (20degrees - 30degrees T) than at lower temperature (10 T). The carbon-saturated maximal photosynthesis of U. lactuca under aerial state was much greater than that under aquatic state at 10 degreesC and 20 degreesC, while the maximal photosynthesis under both states was similar at 30 degreesC. The aerial values of K-m (CO2) for photosynthesis were higher than the aquatic values. On the contrary, the values of apparent photosynthetic CO2 conductance under aerial state were considerably lower than that under aquatic state. It was concluded that the increase of atmospheric CO2 would enhance the primary productivity of U. lactuca through stimulating the photosynthesis under aerial state during low tide.

Spin states in semiconductor quantum dot with a single magnetic ion

We investigate theoretically CdTe quantum dots containing a single Mn2+ impurity, including the sp-d exchange interaction between carriers and the magnetic ion and the short-range exchange interaction between electron and hole. We find anticrossing behaviors in the energy spectrum of the electron-hole (e-h) pair that arise from the interplay between exchange interactions and the magnetic field. In addition to the s-d exchange interaction, we find that other mechanisms inducing the anticrossings become important in the strong heavy hole-light hole (hh-lh) mixing regime. The transition strengths between the states with spin projection of Mn2+ ion S-z not equal -5/2 (S-z = -5/2) decrease (increase) with increasing magnetic fields due to the alignment of the Mn2+ spin. The spin splitting of the e-h pair states depends sensitively on the external magnetic and electric field, which reveals useful information about the spin orientation and position of the magnetic ion. Meanwhile, the manipulation of the position of the magnetic ion offers us a way to control the spin splitting of the carriers. (C) 2008 Elsevier B.V. All rights reserved.

Electron and hole states in diluted magnetic semiconductor quantum dots

The electronic structure of a diluted magnetic semiconductor (DMS) quantum dot (QD) is studied within the framework of the effective-mass theory. We find that the energies of the electron with different spin orientation exhibit different behavior as a function of magnetic field at small magnetic fields. The energies of the hole decreases rapidly at low magnetic fields and saturate at higher magnetic field due to the sp-d exchange interaction between the carriers and the magnetic ions. The mixing effect of the hole states in the DMS QD can be tuned by changing the external magnetic field. An interesting crossing behavior of the hole ground state between the heavy-hole state and the light-hole state is found with variation of the QD radius. The strength of the interband optical transition for different circular polarization exhibts quite different behavior with increasing magnetic field and QD radius.

Magnetic ordering and irreversible magnetization between ZFC and FC states in RCo5Ga7 compounds

The magnetic properties of RCo5Ga7 (R = Y, Tb, Dy, Ho and Er) compounds which crystallize in the ScFe6Ga6-type structure have been studied. The compounds with R, Y, Tb, Dy, Ho and Er display behaviour similar to semiconductors. The Co transition metal sublattice is ferrimagnetic with a very low spontaneous magnetization. The ferrimagnetic ordering observed for R = Y, Tb, Dy, Ho and Er is due to the transition metal sublattice with transition temperatures at about 295 K. At low temperatures, the magnetic ordering for R Tb, Dy, Ho and Er is due to the rare-earth sublattice, which is ferromagnetic with a Curie temperature below 5 K. By fitting the linear part of the inverse magnetization, the effective magnetic moment of the R ion is found to be close to its expected theoretical value, with paramagnetic Curie temperatures below 5 K. Due to the paramagnetic nature of the R sublattice above 60 K, the ferrimagnetic ordering temperature of the Co sublattice does not vary with the type of rare-earth ion. The irreversibility of the magnetization of YCo5Ga7, as measured in zero-field cooled (ZFC) and field cooled (FC) states, is attributed to movement of domain walls. Application of a large enough applied field completes the movement of the domain wall from the low-temperature to the high-temperature one at 5 K. With a very low magnetic field 100 Oe, the difference between the ZFC and the FC shrinks. (C) 2004 Elsevier B.V. All rights reserved.

Fabrication of GdSi2 film by low-energy ion-beam implantation

Single-phase gadolinium disilicide was fabricated by a low-energy ion-beam implantation technique. Auger electron spectroscopy and X-ray photoelectron spectroscopy were used to determine the composition and chemical states of the film. The structure of the sample was analyzed by X-ray diffraction and the surface morphology was investigated by scan electron microscopy. Based on the measurements, only orthorhombic GdSi2 phase was found in the sample and the surface morphology was pitting. After annealing at 350degreesC for 30 min at Ar atmosphere, the full-width at half-maximum of GdSi2 became narrower. It indicates that the GdSi2 is crystallized better after annealing. (C) 2003 Elsevier B.V. All rights reserved.

Theoretical analysis of gate voltage-controlled subband states in an AlxGa1-xN/GaN heterostructure

The subband structure and inter-subband transition as a function of gate voltage are determined by solving the Schrodinger and Poisson equations self-consistently in an AlxGa1-xN/GaN heterostructure. Different aluminum mole fraction and thickness of AlxGa1-xN barrier are considered. Calculation results show that energy difference between the first and second subband covers a wide range (from several tens to hundreds milli-electron volt) by applying different gate voltage, which corresponds to the midinfrared and long-wave infrared wavelength scope. Furthermore, such a modulation on the subband transition energy is much more pronounced for the structure with thin barrier. When the applied positive gate voltage is increased, the triangle well formed at the interface turns to be deeper and narrower, which enhances the confinement for electrons. As a result, the overlap between electron wave function at two subbands increases, and thus the optical intersubband transition also enhances its intensity. This tendency is in good agreement with the available data in the literature. (c) 2005 Elsevier B.V. All rights reserved.

Electronic states of a hydrogenic donor impurity in semiconductor nano-structures

We propose a method for uniformly calculating the electronic states of a hydrogenic donor impurity in low-dimensional semiconductor nano-structures in the framework of effective-mass envelope-function theory, and we study the electronic structures of this systems. Compared to previous methods, our method has the following merits: (a) It can be widely applied in the calculation of the electronic states of hydrogenic donor impurities in nano-structures of various shapes; (b) It can easily be extended to study the effects of external fields and other complex cases; (c) The excited states are more easily calculated than with the variational method; (d) It is convenient to calculate the change of the electronic states with the position of a hydrogenic donor impurity in nano-structures; (e) The binding energy can be calculated explicitly. (c) 2007 Elsevier B.V. All rights reserved.

Passively mode-locked Nd : YVO4 laser using semiconductor saturable absorption mirrors of interface states relaxation region

Semiconductor saturable absorber mirrors (SESAMs) with GaAs/air interface relaxation region have less nonsaturable loss than those with low temperature grown In0.25Ga0.75As relaxation region. A thin layer Of SiO2 and a high reflectivity film Of Si/(SiO2/Si)(4) were coated on the SESAMs, respectively in order to improve the SESAM's threshold for damage. The passively continuous wave mode-locked lasers with two such SESAMs were demonstrated, and the SESAM with high reflectivity film of Si/(SiO2/Si)(4) is proved to be helpful for high output power. (c) 2006 Elsevier GmbH. All rights reserved.

Exciton states of vertically stacked self-assembled InAs quantum disks in an axial magnetic field

We have studied the exciton states of vertically stacked self-assembled quantum disks within the effective mass approximation. The ground energies of a heavy-hole and a light-hole excitons as functions of the vertical disk separation are presented and discussed. The transition energy of a heavy-hole ground-state exciton is calculated and compared with the experimental data. The binding energies are discussed in terms of the probability of ground wave function. The ground energies of a heavy-hole and a light-hole excitons as functions of the applied axial magnetic field are calculated and the effect of disk size (radius of disks) on exciton energies is discussed. (c) 2006 Elsevier B.V. All rights reserved.

Recombination property of nitrogen-acceptor-bound states in ZnO

The recombination property of nitrogen (N)-related acceptor-bound states in ZnO has been investigated by photoluminescence (PL), time-resolved PL, and selective PL. Several possible recombination processes were discussed by analyzing the relaxation and recombination properties under large Coulomb interaction. It is strongly suggested that bound exciton emission dominates the recombination process related to the N acceptor. The recombination lifetime is 750 ps and the binding energy is 67 meV for N-acceptor-bound exciton at low temperature. (c) 2006 American Institute of Physics.

Structural and optical properties of InAlGaN films grown directly on low-temperature buffer layer with (0001)sapphire substrate

Quaternary InAlGaN film has been grown directly on top of low-temperature-deposited GaN buffer layer by low-pressure metalorganic vapor phase epitaxy. High-resolution X-ray diffraction and photoluminescence (PL) results show that the film has good crystal quality and optical property. Temperature-dependent PL and time-resolved PL (TRPL) have been employed to study the carriers recombination dynamics in the film. The TRPL signals can be well fitted as a stretched exponential function exp[-(t/tau)(beta)] from 14 to 250 K, indicating that the emission is attributed to the radiative recombination of excitons localized in disorder quantum nanostructures such as quantum disks originating from indium (In) clusters or In composition fluctuation. The cross-sectional high-resolution electron microscopy measurement further proves that there exist the disorder quantum nanostructures in the quaternary. By investigating the dependence of the exponential parameter beta on the temperature, it is shown that the multiple trapping-detrapping mechanism dominates the diffusion among the localized states. The localized states are considered to have two-dimensional density of states (DOS) at 250 K, since radiative recombination lifetime tau(r) increases linearly with increasing temperature. (C) 2002 Elsevier Science B.V. All rights reserved.