Statistical approach to bulk inclusion initialized damage in films

In experiments, we have found an abnormal relationship between probability of laser induced damage and number density of surface inclusion. From results of X-ray diffraction (XRD) and laser induced damage, we have drawn a conclusion that bulk inclusion plays a key role in damage process. Combining thermo-mechanical damage process and statistics of inclusion density distribution, we have deduced an equation which reflects the relationship between probability of laser induced damage, number density of inclusion, power density of laser pulse, and thickness of films. This model reveals that relationship between critical sizes of the dangerous inclusions (dangerous inclusions refer to the inclusions which can initialize film damage), embedded depth of inclusions, thermal diffusion length and tensile strength of films. This model develops the former work which is the statistics about surface inclusion. (c) 2006 Elsevier B.V. All rights reserved.

Thermodynamic damage mechanism of transparent films caused by a low-power laser

A new model for analyzing the laser-induced damage process is provided. In many damage pits, the melted residue can been found. This is evidence of the phase change of materials. Therefore the phase change of materials is incorporated into the mechanical damage mechanism of films. Three sequential stages are discussed: no phase change, liquid phase change, and gas phase change. To study the damage mechanism and process, two kinds of stress have been considered: thermal stress and deformation stress. The former is caused by the temperature gradient and the latter is caused by high-pressure drive deformation. The theory described can determine the size of the damage pit. (c) 2006 Optical Society of America.

Generation and behavior of pure-edge threading misfit dislocations in InxGa1-xN/GaN multiple quantum wells

The relaxation of the misfit strain by the formation of misfit dislocations in InxGa1-xN/GaN multiple quantum wells grown by metal-organic chemical-vapor deposition was investigated by the cross-sectional transmission electron microscopy, double crystal x-ray diffraction, and temperature-dependent photoluminescence. It is found that the misfit dislocations generated from strain relaxation are all pure-edge threading dislocations with burgers vectors of b=1/3<11 (2) over bar0>. The misfit dislocations arise from the strain relaxation due to the thickness of strained layer greater than the critical thickness. The relaxation of strained layer was mainly achieved by the formation of dislocations and localization of In, while the dislocations changed their slip planes from {0001} to {10 (1) over bar0}. With the increasing temperature, the efficiency of photoluminescence decrease sharply. It indicates that the relaxation of the misfit strain has a strong effect on optical efficiency of film. (C) 2004 American Institute of Physics.

Photon localization in amorphous photonic crystal

The photon localization in disordered two-dimensional photonic crystal is studied by use of multiple- scattering method. The disorder degree can be controlled by adjusting the random rotating angle of the square cell. It is found that the transmission in the band decreases and that in the gap increases as the disorder degree increases, and localization induced by disorder will spread from the band gap edge to the band center and the gap center. Moreover, the mean transmission of the band will decrease exponentiatly with disorder increasing.

The formation and stability of Si1-xCx alloys in Si implanted with carbon

Si1-xCx alloys of carbon (C) concentration between 0.6%-1.0% were grown in Si by ion implantation and high temperature annealing. The formation of Si1-xCx alloys under different ion doses and their stability during annealing were studied. If the implanted dose was less than that for amorphizing Si crystals, the implanted C atoms would like to combine with defects produced during implantation and it was difficult to form Si1-xCx alloys after being annealed at 850 degreesC. With the increment of implanted C ion doses, the lattice damage increased and it was easier to form Si1-xCx alloys. But the lattice strain would become saturate and only part of implanted carbon atoms would occupy the substitutional positions to form Si1-xCx alloys as the implanted carbon dose increased to a certain degree. Once Si1-xCx alloys were formed, they were stable at 950 degreesC, but part of their strain would release as the annealing temperature increased to 1 000 degreesC. Stability of the alloys became worse with the increment of carbon concentration in the alloys.

Damage accumulation in gallium nitride irradiated with various energetic heavy ions

In this work a study of damage production in gallium nitride via elastic collision process (nuclear energy deposition) and inelastic collision process (electronic energy deposition) using various heavy ions is presented. Ordinary low-energy heavy ions (Fe+ and Mo+ ions of 110 keV), swift heavy ions (Pb-208(27+) ions of 1.1 MeV/u) and slow highly-charged heavy ions (Xen+ ions of 180 keV) were employed in the irradiation. Damage accumulation in the GaN crystal films as a function of ion fluence and temperature was studied with RBS-channeling technique, Raman scattering technique, scanning electron microscopy (SEM) and transmission electron microscopy (TEM). For ordinary low-energy heavy ion irradiation, the temperature dependence of damage production is moderate up to about 413 K resulting in amorphization of the damaged layer. Enhanced dynamic annealing of defects dominates at higher temperatures. Correlation of amorphization with material decomposition and nitrogen bubble formation was found. In the irradiation of swift heavy ions, rapid damage accumulation and efficient erosion of the irradiated layer occur at a rather low value of electronic energy deposition (about 1.3 keV/nm(3)),. which also varies with irradiation temperature. In the irradiation of slow highly-charged heavy ions (SHCI), enhanced amorphization and surface erosion due to potential energy deposition of SHCI was found. It is indicated that damage production in GaN is remarkably more sensitive to electronic energy loss via excitation and ionization than to nuclear energy loss via elastic collisions.

Defect production in silicon carbide irradiated with Ne and Xe ions with energy of 2.3 MeV/amu

In the present work specimens of mono-crystalline silicon carbide (4H polytype) were irradiated to three successively increasing ion fluences ranging from 7.2 x 10(14) to 6.0 x 10(16) ions/cm(2) (corresponding to the peak displacement damage of 1, 4 and 13 dpa) with Ne and Xe ions respectively with the energy of 2.3 MeV/amu. The irradiated specimens were subsequently annealed at temperatures of 1173 and 1273 K. Defect structure was investigated with transmission electron microscopy (TEM) using a cross-sectional specimen preparation technique. The typical microstructures of the annealed specimens irradiated with Ne or Xe ions to high fluences are characterized by small gas bubbles in high concentration in the peak damage region and black dots and dislocation loops (located in the basal plane) in a shallower and broader depth region. Larger dislocation loops were observed in the Xe-ion irradiated specimen than in the Ne-ion irradiated specimen at the same peak damage level. The enhanced formation of dislocation loops in the case of Xe-ion irradiation is understandable by assuming stronger inclination of heavier inert-gas atoms to occupy substitute site in the peak damage region.

Evolution induced catastrophe in a nonlinear dynamical model of material failure

In order to study the failure of disordered materials, the ensemble evolution of a nonlinear chain model was examined by using a stochastic slice sampling method. The following results were obtained. (1) Sample-specific behavior, i.e. evolutions are different from sample to sample in some cases under the same macroscopic conditions, is observed for various load-sharing rules except in the globally mean field theory. The evolution according to the cluster load-sharing rule, which reflects the interaction between broken clusters, cannot be predicted by a simple criterion from the initial damage pattern and even then is most complicated. (2) A binary failure probability, its transitional region, where globally stable (GS) modes and evolution-induced catastrophic (EIC) modes coexist, and the corresponding scaling laws are fundamental to the failure. There is a sensitive zone in the vicinity of the boundary between the GS and EIC regions in phase space, where a slight stochastic increment in damage can trigger a radical transition from GS to EIC. (3) The distribution of strength is obtained from the binary failure probability. This, like sample-specificity, originates from a trans-scale sensitivity linking meso-scopic and macroscopic phenomena. (4) Strong fluctuations in stress distribution different from that of GS modes may be assumed as a precursor of evolution-induced catastrophe (EIC).

Fatigue fracture-behavior of carbon-fiber-reinforced modified bismaleimide composites

The fracture toughness and fatigue fracture behaviour of carbon-fiber-reinforced modified bismaleimide (BMI) composites have been studied. These composites were found to have higher fracture toughnes, better damage tolerance and longer fatigue life than carbon-fiber composites with epoxy matrices. Delamination is the major mode of failure in fatigue and it is controlled by the properties of the matrix and interface. The improved performance is dire to the presence of thermoplastic particles in the modified BMI matrix which gives rise to enhanced fiber/matrix adhesion and more extensive plastic deformation. The fatigue behaviour also depends on the stacking sequence, with the multidirectional [45/90/-45/0] fiber-reinforced modified BMI composite having a lower crack propagation rate and longer fatigue life than the unidirectional laminate. This arises because of the constraint on the damage processes due to the different fiber orientation in the plies.

激波作用下岩石损伤试验及评价方法

通过水中爆炸激波对试样的损伤试验来模拟激波对地层岩石的破坏作用。试验中观测了爆炸后试样内部裂纹形貌的分布，利用自制传感器测到了试样内部的激波压力，优化筛选出了损伤度模型。通过对试样弹性波速进行处理和分析，给出了试样的动态损伤阈值求解方法。结果表明，激波在试样中的传播符合指数衰减规律，相对损伤度、无量纲波速的平方、无量纲拉应力它们两两之间呈线性关系。

飞秒激光对氟化镁烧蚀机理研究

用扫描电镜（SEM）研究了氟化镁在800nm超短脉冲激光作用下的单枪表面烧蚀形貌．根据烧蚀斑面积与激光脉冲能量间的对数关系，测得烧蚀阈值与激光脉宽的关系曲线（55—750fs）．计算了导带电子的双光子吸收，改进了多速率方程模型．很好地解释了实验结果．

Direct visualization of the dynamics of membrane-anchor proteins in living cells

Dynamic properties of proteins have crucial roles in understanding protein function and molecular mechanism within cells. In this paper, we combined total internal reflection fluorescence microscopy with oblique illumination fluorescence microscopy to observe directly the movement and localization of membrane-anchored green fluorescence proteins in living cells. Total internal reflect illumination allowed the observation of proteins in the cell membrane of living cells since the penetrate depth could be adjusted to about 80 nm, and oblique illumination allowed the observation of proteins both in the cytoplasm and apical membrane, which made this combination a promising tool to investigate the dynamics of proteins through the whole cell. Not only individual protein molecule tracks have been analyzed quantitatively but also cumulative probability distribution function analysis of ensemble trajectories has been done to reveal the mobility of proteins. Finally, single particle tracking has acted as a compensation for single molecule tracking. All the results exhibited green fluorescence protein dynamics within cytoplasm, on the membrane and from cytoplasm to plasma membrane.

Optical breakdown of 6H SiC induced by wavelength-tunable femtosecond laser pulses

The damage mechanisms and micromachining of 6H SiC are studied by using femtosecond laser pulses at wavelengths between near infrared (NIR) and near ultraviolet (NUV) delivered from an optical parametric amplifier (OPA). Our experimental results indicate that high quality microstructures can be fabricated in SiC crystals. On the basis of the dependence of the ablated area and the laser pulse energy, the threshold fluence of SiC is found to increase with the incident laser wavelength in the visible region, while it remains almost constant for the NIR laser. For the NIR laser pulses, both photoionization and impact ionization play important roles in electronic excitation, while for visible lasers, photoionization plays a more important role.

A New theory for evaluating the number density of inclusions in films

A new formulation derived from thermal characters of inclusions and host films for estimating laser induced damage threshold has been deduced. This formulation is applicable for dielectric films when they are irradiated by laser beam with pulse width longer than tens picoseconds. This formulation can interpret the relationship between pulse-width and damage threshold energy density of laser pulse obtained experimentally. Using this formulation, we can analyze which kind of inclusion is the most harmful inclusion. Combining it with fractal distribution of inclusions, we have obtained an equation which describes relationship between number density of inclusions and damage probability. Using this equation, according to damage probability and corresponding laser energy density, we can evaluate the number density and distribution in size dimension of the most harmful inclusions. (c) 2005 Elsevier B.V. All rights reserved.

脉冲激光辐照光学薄膜的缺陷损伤模型

建立了缺陷吸收升温致薄膜激光损伤模型，该模型从热传导方程出发，考虑了缺陷内部的温度分布以及向薄膜的传导过程，通过引入散射系数简化了Mie散射理论得出的吸收截面．对电子束蒸发沉积的ZrO2：Y2O3单层膜进行了激光破坏实验，薄膜样品的损伤是缺陷引起的，通过辉光放电质谱法对薄膜制备材料的纯度分析发现材料中的主要杂质元素为铂，其含量为0．9％．利用缺陷损伤模型对损伤过程进行了模拟，理论模型和实验结果取得了较好的一致性．