Dynamic full-range Fourier-domain optical coherence tomography using sinusoidal phase-modulating interferometry

We propose a technique for dynamic full-range Fourier-domain optical coherence tomography by using sinusoidal phase-modulating interferometry, where both the full-range structural information and depth-resolved dynamic information are obtained. A novel frequency-domain filtering algorithm is proposed to reconstruct a time-dependent complex spectral interferogram from the sinusoidally phase-modulated interferogram detected with a high-rate CCD camera. By taking the amplitude and phase of the inverse Fourier transform of the complex spectral interferogram, a time-dependent full-range cross-sectional image and depth-resolved displacement are obtained. Displacement of a sinusoidally vibrating glass cover slip behind a fixed glass cover slip is measured with subwavelength sensitivity to demonstrate the depth-resolved dynamic imaging capability of our system. (c) 2007 Society of Photo-Optical Instrumentation Engineers.

A high accuracy image sensor for sinusoidal phase-modulating interferometry

We proposed a high accuracy image sensor technique for sinusoidal phase-modulating interferometer in the field of the surface profile measurements. It solved the problem of the CCD's pixel offset of the same column under two adjacent rows, eliminated the spectral leakage, and reduced the influence of external interference to the measurement accuracy. We measured the surface profile of a glass plate, and its repeatability precision was less than 8 nm and its relative error was 1.15 %. The results show that it can be used to measure surface profile with high accuracy and strong anti-interference ability. (C) 2007 Elsevier GmbH. All rights reserved.

Real-time micro-vibration measurement in sinusoidal phase-modulating interferometry

As there exist some problems with the previous laser diode (LD) real-time microvibration measurement interferometers, such as low accuracy, correction before every use, etc., in this paper, we propose a new technique to realize the real-time microvibration measurement by using the LD sinusoidal phase-modulating interferometer, analyze the measurement theory and error, and simulate the measurement accuracy. This interferometer utilizes a circuit to process the interference signal in order to obtain the vibration frequency and amplitude of the detective signal, and a computer is not necessary in it. The influence of the varying light intensity and light path difference on the measurement result can be eliminated. This technique is real-time, convenient, fast, and can enhance the measurement accuracy too. Experiments show that the repeatable measurement accuracy is less than 3.37 nm, and this interferometer can be applied to real-time microvibration measurement of the MEMS. (C) 2007 Elsevier GmbH. All rights reserved.

Phase mapping of domain kinetics in lithium niobate by digital holographic interferometry

The phase mapping of domain kinetics under the uniform steady-state electric field is achieved and investigated in the LiNbO3 crystals by digital holographic interferometry. We obtained the sequences of reconstructed three-dimensional and two-dimensional wave-field phase distributions during the electric poling in the congruent and near stoichiometric LiNbO3 crystals. The phase mapping of individual domain nucleation and growth in the two crystals are obtained. It is found that both longitudinal and lateral domain growths are not linear during the electric poling. The phase mapping of domain wall motions in the two crystals is also obtained. Both the phase relaxation and the pinning-depinning mechanism are observed during the domain wall motion. The residual phase distribution is observed after the high-speed domain wall motion. The corresponding analyses and discussions are proposed to explain the phenomena.

Group delay dispersion measurement of Yb : Gd2SiO5, Yb : GdYSiO5 and Yb : LuYSiO5 crystal with white-light interferometry

We report the measured group delay dispersion (GDD) of new crystals Yb:Gd2SiO5 (Yb:GSO), Yb:GdYSiO5 (Yb:GYSO) and Yb:LuYSiO5 (Yb:LYSO) over wavelengths from 1000nm to 1200nm, with a white-light interferometer. Those GDD data should be useful for the dispersion compensation for femtosecond pulse generation in the lasers with these new crystals as the gain media. (C) 2007 Optical Society of America

Single-photon source in strong photon-atom interaction regime in quasiperiodic photonic crystals

The antibunching properties of the fluorescence from a two-level ideal system in a 12-fold quasiperiodic photonic crystal are investigated based on the calculated local density of states. We found that the antibunching phenomenon of the fluorescence from two-level ideal systems could be significantly changed by varying their positions, i.e., perfect antibunching and antibunching with damped Rabi oscillation phenomenon occurred in different positions and at different frequencies in photonic crystals as a result of the large differences in the local density of states. This study revealed that the multi-level coherence of fluorescence from a two-level ideal system could be manipulated by controlling the position of the two-level ideal system in photonic crystals and the emission frequency in the photonic band structure. Copyright (C) EPLA, 2008

Thermally induced Fe atom transition from substitutional to interstitial sites in InP and its influence on material property

As-grown Fe-doped semi-insulating InP single crystal has been converted into n-type low-resistance material after high temperature annealing. Defects in the InP materials have been studied by conventional Hall effect measurement, thermally stimulated current spectroscopy, deep level transient spectroscopy and X-ray diffraction respectively. The results indicate that Fe atoms in the InP material change from the substitutional to the interstitial sites under thermal activation. Consequently, the InP material loses its deep compensation centers which results in the change in types of conduction. The mechanism and cause of the phenomena have been analyzed through comparison of the sites of Fe atom occupation and activation in doping, diffusion and ion implantation processes of InP.

Quantum-well anisotropic forbidden transitions induced by a common-atom interface potential

A prominent effect of the interface potential (IP) [E. L. Ivchenko and A. Yu. Kaminski, Phys. Rev. B 54, 5852 (1996); O. Krebs and P. Voisin, Phys. Rev. Lett. 77, 1829 (1996)], the optical anisotropy of the forbidden transitions in quantum wells has been observed by reflectance-difference spectroscopy. Predictions by the heavy-light-hole coupling IP models are qualitatively consistent with all the observed features of the forbidden and the allowed transitions. The fact that the predicted value of the relative, transition strength, which depends on neither the IP strength nor the electric field, disagrees with the observed one indicates that coupling involving X and/or L bands may also be important. [S0163-1829(99)04227-7].

Application of bacteriorhodopsin film for polarization phase-shifting interferometry

Photoinduced anisotropy in bacteriorhodopsin (BR) film is based on photoanisotropic selective bleaching of BR molecules under linearly polarized excitation light. It is modulated by the polarization orientation of the linearly polarized light. The anisotropic information recorded in the BR film is read by a circularly polarized light, which is in turn converted into an elliptical polarized light by the BR film. The rotation angle and the ellipticity of the elliptical polarized light are dependent on the polarization orientation of the linearly polarized excitation light. A phase-shifting interferometer based on the photoinduced anisotropy of BR film is presented theoretically and experimentally. Phase shift is controlled by the polarization orientation of the external excitation light, thus, the phase shift can be controlled without moving parts inside the interferometer, which contributes to the mechanical stability of the system.