STRUCTURE-ANALYSIS OF MOLTEN CACL2-KCL SYSTEM BY X-RAY-DIFFRACTION

Radial distribution function of CaCl2-KCl (1:2 mol) melt was measured by X-ray scattering of high temperature liquid. The nearest neighbour distances of Ca2+-Cl-, K+-Cl- and Cl--Cl- ionic pairs are 0.278, 0.306 and 0.380 nm, respectively, Discussion on the relation between structure and physicochemical properties in the melt was simply done in this paper.

SYNTHESIS AND X-RAY CRYSTAL-STRUCTURE OF [EU(ETA-6-C6ME6)(ALCL4)2]4 - THE 1ST CYCLOTETRAMERIC LANTHANIDE(II) COMPLEX WITH A NEUTRAL PI-LIGAND

The reaction of EuCl3, AlCl3 and C6Me6 in toluene gives the Eu(II) complex [Eu(eta-6-C6Me6)(AlCl4)2]4; X-ray crystal determination shows the molecule to be a cyclotetramer, in which the four Eu(C6Me6)AlCl4 units are connected via four groups of eta-2-AlCl4.

SYNTHESIS AND X-RAY CRYSTAL-STRUCTURE OF SM(C8H8)(2,4-C7H11).THF

SmCl3 reacts with K2C8H8 to yield the complex Sm(C8H8)Cl.2thf, which reacts with K(2,4-C7H11) (2,4-C7H11 = 2,4-dimethylcyclopentadienyl) to form Sm(C8H8)(2,4-C7H11).thf; the X-ray crystal structure of Sm(C8H8)(2,4-C7H11).thf shows that the 2,4-dimethylcyclopentadienyl has a 'U' conformation.

SYNTHESIS AND X-RAY CRYSTAL-STRUCTURE OF A MONOPENTAMETHYLCYCLOPENTADIENYL DERIVATIVE OF GADOLINIUM (NA(MU-2-THF)[(C5ME5)GD(THF)]2(MU-2-CL)3(MU-3-CL)2)2.6THF

The reaction of GdCl3 with 1 equiv of NaC5Me5 generates a neutral complex C5Me5GdCl2(THF)3 and a novel complex {Na(mu-2-THF)[(C5Me5)Gd(THF)]2(mu-2-Cl)3(mu-3-Cl)2}2.6THF whixh recrystallizes from THF in triclinic, the space group P1BAR with unit cell dimentions of a 12.183(4), b 13.638(6), c 17.883(7) angstrom, alpha-110.38(3), beta-94.04(3), gamma-99.44(3)-degrees, V 2721.20 angstrom-3 and D(calc) 1.43 g cm-3 for Z = 1. Least-squares refinement of 2170 observed reflections led to a final R value of 0.047. The title complex consists of two Na(mu-2-THF)[(C5Me5)Gd(THF)]2(mu-3-Cl)3(mu-3-Cl)2 units bridged together via two mu-2-THF to Na coordination. Each Gd ion is surrounded by one C5Me5 ligand, two mu-3-Cl, two mu-2-Cl and one THF in a distorted octahedral arrangement with average Gd-C(ring) 2.686(33), Gd-mu-2-Cl 2.724(7), Gd-mu-3-Cl 2.832(8) and Gd-O 2.407(11) angstrom. The sodium ion coordinates to two bridging THF, two mu-2-Cl and two mu-3-Cl to form a distorted octahedron with average Na-mu-2-O, Na-mu-2-Cl and Na-mu-3-Cl of 2.411(21), 2.807(15) and 2.845(12) angstrom, respectively.

Small angle X-ray scattering of the colloidal crystal

The monodisperse polystyrene spheres are assembled into the colloidal crystal on the glass substrate by vertical deposition method, which is aimed at the so-called photonic crystal applications. The structural information of the bulk colloidal crystal is crucial for understanding the crystal growth mechanism and developing the various applications of colloidal crystal. Small-angle X-ray scattering (SAXS) technique was used to obtain the bulk structure of the colloidal crystal at Beamline 1W2A of BSRF. It is found that the SAXS pattern is sensitive to the relative orientation between the colloidal sample and the incident X-ray direction. The crystal lattice was well distinguished and determined by the SAXS data.

Microstructure and strain analysis of GaN epitaxial films using in-plane grazing incidence x-ray diffraction

This paper investigates the major structural parameters, such as crystal quality and strain state of (001)-oriented GaN thin films grown on sapphire substrates by metalorganic chemical vapour deposition, using an in-plane grazing incidence x-ray diffraction technique. The results are analysed and compared with a complementary out-of-plane x-ray diffraction technique. The twist of the GaN mosaic structure is determined through the direct grazing incidence measurement of (100) reflection which agrees well with the result obtained by extrapolation method. The method for directly determining the in-plane lattice parameters of the GaN layers is also presented. Combined with the biaxial strain model, it derives the lattice parameters corresponding to fully relaxed GaN films. The GaN epilayers show an increasing residual compressive stress with increasing layer thickness when the two dimensional growth stage is established, reaching to a maximum level of -0.89 GPa.

Investigation of GaSb epilayer grown on vicinal GaAs(001) substrate by high resolution x-ray diffraction

GaSb epilayers grown on GaAs(001) vicinal substrate misoriented towards (111) plane were studied using high-resolution x-ray diffraction (HRXRD). The results show that GaSb epilayers exhibit positive crystallographic tilt and the distribution of 60 degrees misfit dislocations (MDs) is imbalanced. The vicinal substrate also leads to the anisotropy of the mosaic structure, i.e. the lateral coherent lengths in [1 (1) over bar0] directions are larger than those in [110] directions. Furthermore, the full-width at half maximum (FWHM) of the off-axis peaks varies with the inclination angle, which is a result of different dislocation densities in the {111} glide planes.

The microstructure of hydrogenated microcrystalline silicon thin films studied by small-angle x-ray scattering

The microstructures of hydrogenated microcrystalline silicon (tic-Si: H) thin films, prepared by plasma-enhanced chemical vapor deposition (PECVD), hot wire CVD(HWCVD) and plasma assisted HWCVD (PE-HWCVD), have been analyzed by the small angle x-ray scattering(SAXS) measurement. The SAXS data show that the microstructures of the μ c-Si: H films display different characteristics for different deposition techniques. For films deposited by PECVD, the volume fraction of micro-voids and mean size are smaller than those in HWCVD sample. Aided by suitable ion-bombardment, PE-HWCVD samples show a more compact structure than the HWCVD sample. The microstructure parameters of the μ c-Si: H thin films deposited by two-steps HWCVD and PE-HWCVD with Ar ions are evidently improved. The result of 45° tilting SAXS measurement indicates that the distribution of micro-voids in the film is anisotropic. The Fouriertransform infrared spectra confirm the SAXS data.

X-ray diffraction and optical characterization of interdiffusion in self-assembled InAs/GaAs quantum-dot superlattices

We report on the characterization of thermally induced interdiffusion in InAs/GaAs quantum-dot superlattices with high-resolution x-ray diffraction and photoluminescence techniques. The dynamical theory is employed to simulate the measured x-ray diffraction rocking curves of the InAs/GaAs quantum-dot superlattices annealed at different temperatures. Excellent agreement between the experimental curves and the simulations is achieved when the composition, thickness, and stress variations caused by interdiffusion are taken in account. It is found that the significant In-Ga intermixing occurs even in the as-grown InAs/GaAs quantum dots. The diffusion coefficients at different temperatures are estimated. (C) 2000 American Institute of Physics. [S0003-6951(00)02440-2].

Double crystal X-ray diffraction study of MBE self-organized InAs quantum dots

A series of GaAs/InAs/GaAs samples were studied by double crystal X-ray diffraction and the X-ray dynamic theory was used to analyze the X-ray diffraction results. As the thickness of InAs layer exceeds 1.7 monolayer, 3-dimensional InAs islands appear. Pendellosung fringes shifted. A multilayer structure model is proposed to describe the strain status in the InAs islands of the sample and a good agreement is obtained between the experimental and theoretical curves.

A Prototype X-ray Framing Camera With Variable Exposure Time Based on Double-Gated Micro-Channel Plates

We present a novel X-ray frame camera with variable exposure time that is based on double-gated micro-channel plates (MCP). Two MCPs are connected so that their channels form a Chevron-MCP structure, and four parallel micro-strip lines (MSLs) are deposited on each surface of the Chevron-MCP. The MSLs on opposing surfaces of the Chevron-MCP are oriented normal to each other and subjected to high voltage. The MSLs on the input and output surfaces are fed high voltage pulses to form a gating action. In forming two-dimensional images, modifying the width of the gating pulse serves to set exposure times (ranging from ps to ms) and modifying the delay between each gating pulse serves to set capture times. This prototype provides a new tool for high-speed X-ray imaging, and this paper presents both simulations and experimental results obtained with the camera.

DETERMINATION OF SURFACE-ROUGHNESS OF INP (001) WAFERS BY X-RAY-SCATTERING

The surface roughness of polished InP (001) wafers were examined by x-ray reflectivity and crystal truncation rod (CTR) measurements. The root-mean-square roughness and the lateral correlation scale were obtained by both methods. The scattering intensities in the scans transverse to the specular reflection rod were found to contain two components. A simple surface model of surface faceting is proposed to explain the experimental data. The sensitivities of the two methods to the surface structure and the role of the resolution functions in the CTR measurements are discussed.

Structural studies of NixFe100-x/Mo magnetic multilayers by x-ray small-angle reflection and high-angle diffraction

Magnetic multilayers [NixFe100-x/Mo-30] grown by dc-magnetron sputtering were investigated by x-ray small-angle reflection and high-angle diffraction. Structural parameters of the multilayers such as the superlattice periods, the interfacial roughness, and interplane distance were obtained. It was found that for our NixFe100-x/Mo system, the Mo layer has bcc structure with [110] preferential orientation, while the preferential orientation of the NixFe100-x layer changes from a fee structure with [111] preferential orientation to a bcc structure with [110] preferential orientation with decreasing values of x. An intermixing layer located in the interlayer region between the NixFe100-x and Mo layers exists in the multilayers, and its thickness is almost invariant with respect to an increase of Mo layer thickness and/or a decrease of x in the region of x greater than or equal to 39. The thickness of the intermixing layer falls to zero when x less than or equal to 23.

X-ray-diffraction study of quasipseudomorphic ErSi1.7 layers formed by channeled ion-beam synthesis

ErSi1.7 layers with high crystalline quality (chi(min) of Er is 1.5%) have been formed by 90 keV Er ion implantation to a dose of 1.6X10(17)/cm(2) at 450 degrees C using channeled implantation. The perpendicular and parallel elastic strain e(perpendicular to)=-0.94%+/-0.02% and e(parallel to)=1.24%+/-0.08% of the heteroepitaxial erbium silicide layers have been measured with symmetric and asymmetric x-ray reflections using a double-crystal x-ray diffractometer. The deduced tetragonal distortion e(T(XRD))=e(parallel to)-e(perpendicular to)=2.18%+/-0.10%, which is consistent with the value e(T(RBS))2.14+/-0.17% deduced from the Rutherford backscattering and channeling measurements. The quasipseudomorphic growth of the epilayer and the stiffness along a and c axes of the epilayer deduced from the x-ray diffraction are discussed.