144 resultados para Thermo-optic coefficients
Resumo:
SOI (Silicon on Insulator) based photonic devices, including stimulated emission from Si diode, RCE (Resonant Cavity Enhanced) photodiode with quantum structure, MOS (Metal Oxide Semiconductor) optical modulator with high frequency, SOI optical matrix switch and wavelength tunable filter are reviewed in the paper. The emphasis will be played on our recent results of SOI-based thermo-optic waveguide matrix switch with low insertion loss and fast response. A folding re-arrangeable non-blocking 4x4 matrix switch with total internal reflection (TIR) mirrors and a first blocking 16 x 16 matrix were fabricated on SOI wafer. The extinction ratio and the crosstalk are better. The insertion loss and the polarization dependent loss (PDL) at 1.55 mu m increase slightly with longer device length and more bend and intersecting waveguides. The insertion losses are expected to decrease 2-3 dB when anti-reflection films are added in the ends of the devices. The rise and fall times of the devices are 2.1 mu s and 2.3 mu s, respectively.
Resumo:
Novel compact design for 4-channel SOI-based reconfigurable optical add/drop multiplexer using microring resonators is presented and analyzed. Microring resonators have two important attributes as a key new technology for future optical communications, namely functionality and compactness. Functionality refers to the fact that a wide range of desirable filter characteristics can be synthesized by coupling multiple rings. Compactness refers the fact that ring resonators with radii about 30 mu m can lead to large scale integration of devices with densities on the order of 10(4) similar to 10(5) devices per square centimeter. A 4-channel reconfigurable optical add/drop multiplexer comprises a grid-like array of ridge waveguides which perpendicularly cross through each other. SOI-based resonators consisted of multiple rings at each of the cross-grid nodes serve as the wavelength selective switch, and they can switch an optical signal between two ports by means of tuning refractive index of one of the rings. The thermo-optic coefficient of silicon is 1.86x 10(-4) /K. Thus a temperature rise of 27K will increase the refractive index by 5 x 10(-3), which is enough to cause the switching of our designed microring resonators. The thermo-optic effect is used to suppress the resonator power transfer, rather than to promote loss. Thus, the input signal only suffers small attenuation and simultaneously low crosstalk can be achieved by using multiple rings.
Resumo:
The high glass transition temperature polymer polyetherketone doped with disperse red 13 (DR13/PEK-c) has been prepared by the spin-coating method. Through in situ second-harmonic generation, the corona poling temperature was optimized by measuring the temperature dependence of the in situ second-harmonic generation signal intensity under the poling electric field. The linear electro-optic coefficients of the poled polymer films have been determined at 632.8 nm by using a simple interferometric technique. The polymer system was measured after 13 000 h, and found that it remained at 80% of its initial value.
Resumo:
The temperature dependence of characteristics for multimode interference (MMI) based 3-dB coupler in silicon-on-insulator is analyzed, which originates from the relatively high thermo-optic coefficient of silicon. For restricted interference 3-dB MMI coupler, the output power uniformity is ideally 0 at room temperature and becomes 0. 32 dB when temperature rises up to 550 K. For symmetric interference 3-dB MMI coupler, the power uniformity keeps ideally 0 due to its intrinsic symmetric interference mechanism. With the temperature rising, the excess loss of the both devices increases. The performance deterioration due to temperature variety is more obvious to restricted interference MMI 3-dB coupler, comparing with that of symmetric interference MMI 3-dB coupler.
Resumo:
The simple reflection technique is usually used to measure the linear electro-optic (EO) coefficient (Pockels coefficient) in the development of EO polymer thin films. But there are some problems in some articles in the determination of the phase shift between the s and p light modes of a laser beam waveguided into the polymer film while a modulating voltage is applied across the electrodes, and different expressions for the linear EO coefficient measured have been given in these articles. In our research, more accurate expression of the linear EO coefficient was deduced by suitable considering the phase shift between the s and p light modes. The linear EO coefficients of several polymer thin films were measured by reflection technique, and the results of the Linear EO coefficient calculated by different expressions were compared. The limit of the simple reflection technique for measuring the linear EO coefficient of the polymer thin films was discussed.
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The soil organic partition coefficient (K-oc) is one of the most important parameters to depict the transfer and fate of a chemical in the soil-water system. Predicting K-oc by using a chromatographic technique has been developing into a convenient and low-cost method. In this paper, a soil leaching column chromatograpy (SLCC) method employing the soil column packed with reference soil GSE 17201 (obtained from Bayer Landwirtschaftszentrum, Monheim, Germany) and methanol-water eluents was developed to predict the K-oc of hydrophobic organic chemicals (HOCs), over a log K-oc range of 4.8 orders of magnitude, from their capacity factors. The capacity factor with water as an eluent (k(w)') could be obtained by linearly extrapolating capacity factors in methanol-water eluents (k') with various volume fractions of methanol (phi). The important effects of solute activity coefficients in water on k(w)' and K-oc were illustrated. Hence, the correlation between log K-oc and log k(w)' (and log k') exists in the soil. The correlation coefficient (r) of the log K-oc vs. log k(w)' correlation for 58 apolar and polar compounds could reach 0.987, while the correlation coefficients of the log K-oc-log k' correlations were no less than 0.968, with phi ranging from 0 to 0.50. The smaller the phi, the higher the r. Therefore, it is recommended that the eluent of smaller phi, such as water, be used for accurately estimating K-oc. Correspondingly, the r value of the log K-oc-log k(w)' correlation on a reversed-phase Hypersil ODS (Thermo Hypersil, Kleinostheim, Germany) column was less than 0.940 for the same solutes. The SLCC method could provide a more reliable route to predict K-oc indirectly from a correlation with k(w)' than the reversed-phase liquid chromatographic (RPLC) one.
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1999年,在我国实践5号卫星上完成了两层流体空间实验,实验研究两层不相混合流体的纯Marangoni对流(温度梯度与界面垂直)与热毛细对流(温度梯度方向与流体界面平行).前者存在发生Marangoni对流的最小临界温差值△Tc,低于该值流体系统处于静止状态;后者中只要存在沿界面的温度梯度便会产生热毛细对流.空间实验采用石蜡和氟化液两层流体新体系,实现了平整的液-液交界面,并从卫星上传回上万幅数字图像.通过多幅图像叠加处理得到了定量的流速场.数值模拟计算分析了相应工况时对流流动的速度场,两者的流场结构和速度大小基本一致,实验验证了理论模型.
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A theoretical analysis of instability of saturated soil is presented considering the simple shearing of a heat conducting thermo-visco-plastic material. It is shown that the instability is mainly the consequence of thermal softening which overcomes the strain hardening and the other type of instability is controlled by strain softening. The effects of other factors such as permeability to the instability are discussed in this paper.
Resumo:
In this research, asymmetrical cold rolling was produced by the difference in the coefficient of friction between rolls and sheets rather than the difference of roll radius or rotation speeds. The influence of friction coefficient ratio on the cross shear deformation, rolling pressure and torque was investigated using slab analysis. The results showed that the shear deformation zone length increased with the increase of the friction coefficient ratio. The rolling force decreased only under the condition that the friction coefficient ratio increased while the sum of the friction coefficients was held constant. As the reduction per pass was increased, the shear deformation zone length increased and the rolling force also increased. An increase of the front tension resulted in a decrease of the shear deformation zone length. An increase of back tension, however, led to an increase of the shear deformation zone length. The reduction of rolling torque for the work roll with higher surface roughness was greater than that for the work roll with lower surface roughness. (C) 2002 Elsevier Science B.V. All rights reserved.
A new expression of hardening coefficients for fcc-crystal and calibration of the material constants
Resumo:
In order to describe the effect of latent hardening on the macro-plastic behavior of foc-crystal, a new expression for hardening coefficient is proposed in which there are 12 material constants, each having clear physical meaning. And a method of material constant calibration is suggested and used to determine the material constants of copper and aluminum crystal. The simulated load-elongation curves along various crystallographic orientations are comparable with the experimental ones.
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The paper outlines the study of the evoluation of the thermally assisted visco-plastic shearing. Analytically, numerically and experimentally, it is demonstrated that the whole process of the shear consists of multi-stages. Owing to instability, early uniform unsteady shear deformation would transform into localization and finally a band-like shearing zone forms, which appears to be a quasi-steady dissipative structure. The mechanisms governing the processes are analyzed. Accompanying the shear banding, micro-damage also develops. The microscopic observations reveal the details of the cumulative damage.
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A theoretical description of thermo-plastic instability in simple shear is presented in a system of equations describing plastic deformation, the first law of thermodynamics and Fourier's heat transfer rule. Both mechanical and thermodynamical parameters influence instability and it is shown that two different modes of instability may exist. One of them is dominated by thermal softening and has a characteristic time and length, connected to each other by thermal diffusion.A criterion combining thermal softening, current stress, density, specific heat, work-hardening, thermal conductivity and current strain rate is obtained and practical implications are discussed.
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The effects of the free-stream thermo-chemical state on the test model flow field in the high-enthalpy tunnel are studied numerically. The properties of the free-stream, which is in thermo-chemical non-equilibrium, are determined by calculating the nozzle flow field. A free-stream with total enthalpy equal to the real one in the tunnel while in thermo-chemical equilibrium is constructed artificially to simulate the natural atmosphere condition. The flow fields over the test models (blunt cone and Apollo command capsule model) under both the non-equilibrium and the virtual equilibrium free-stream conditions are calculated. By comparing the properties including pressure, temperature, species concentration and radiation distributions of these two types of flow fields, the effects of the non-equilibrium state of the free-stream in the high-enthalpy shock tunnel are analyzed.
Resumo:
GaInP/GaAs dual-junction solar cell with a conversion efficiency of 25.2% has been fabricated using metalorganic chemical vapor deposition (MOCVD) technique. Quantum efficiencies of the solar cell were measured within a temperature range from 25 to 160A degrees C. The results indicate that the quantum efficiencies of the subcells increase slightly with the increasing temperature. And red-shift phenomena of absorption limit for all subcells are observed by increasing the cell's work temperature, which are consistent with the viewpoint of energy gap narrowing effect. The short-circuit current density temperature coefficients dJ (sc)/dT of GaInP subcell and GaAs subcell are determined to be 8.9 and 7.4 mu A/cm(2)/A degrees C from the quantum efficiency data, respectively. And the open-circuit cell voltage temperature coefficients dV (oc)/dT calculated based on a theoretical equation are -2.4 mV/A degrees C and -2.1 mV/A degrees C for GaInP subcell and GaAs subcell.