Relationship between chemical bond parameters and superconducting temperature in HgBa2Can-1CunO2n+2+delta (n=1, 2, 3, 4)

Bond covalency and valence of elements in HgBa2Can-1CunO2n+2+delta (n = 1, 2, 3, 4) were calculated and their relationship with T-c was discussed. For both oxygen and argon annealed samples, the results indicated that with the increase of n, the trend of bond covalency of Hg-O and Cu-O was the same or opposite compared with that of superconducting temperature. This may suggest that the magnitudes of Cu-O and Hg-O bond covalency are important in governing the superconducting temperature. For the highest T-c sample, Hg had the lowest valence, implying that lower valence of Hg was preferred in order to produce higher T-c. For fixed n, the valence of Cu in oxygen annealed samples was larger than that in argon annealed samples, indicating that oxygen annealed samples produced more carriers than argon annealed samples.

Dependence of superconducting temperature on chemical bond parameters in YBa2Cu3O6+delta (delta=0-1)

The chemical bond parameters, that is ionicities and average energy gaps, for all types of chemical bonds in YBa2Cu3O6+delta have been investigated with variation of oxygen content delta (delta = 0.0, 0.35, 0.45, 0.58, 0.64, 0.73, 0.78, 0.81, 0.95, 1.00). The theory used is the complex crystal chemical bond theory, which is the development of P-V-L theory. The two plateaus near 90 K and 60 K in superconducting transition temperatures, and the disappearance of superconductivity with the change of oxygen content, were reasonably explained by chemical bond parameters. The results also showed that the Cu-O chains play a vital role in the transition from non-superconductors to superconductors, and the highest transition temperature occurred when the plane-chain reached a coupling state. (C) 1998 Elsevier Science Ltd. All rights reserved.

ANALYSIS OF A NEW SUPERCONDUCTING PHASE IN THE BISRCACUO SYSTEM

By doping Sb, Ba and In to the Bi-system and with the variation of nominal atomic ratio of Cu, Sr and Ca, a new possible phase is found with T(c) almost-equal-to 105 K, but with a structure of 2212 phase. Effects of post-sintering treatment from air-quenched to O2-annealed were investigated for the approximately 105 K new phase.

Effect of humidity on microstructure and properties of YBCO film prepared by TFA-MOD method

Epitaxial YBCO superconducting films were deposited on the single crystal LaAlO3 (001) substrate by metal organic deposition method. All YBCO films were fired at 820 degrees C in humidity range of 2.6%-19.7% atmosphere. Microstructure of YBCO thin films was analyzed by means of X-ray diffraction (XRD) and scanning electron microscopy (SEM). Superconducting properties of YBCO films were measured by four-probe method. XRD results showed that the second phase (such as BaF2)and a-axis-oriented grains existed in the films prepared at 2.6% humidity condition; a-axis-oriented grains increased in the film prepared at higher than 4.2% humidity condition; almost pure c-axias-oriented grains existed in the films fired at 4.2% humidity condition. Morphologies of the YBCO films showed that all films had a smooth and crack-free surface. YBCO film prepared at 4.2% humidity condition showed J(c) value of 3.3 MA/cm(2) at 77 K in self-field.

Repeat-until-success distributed quantum computation by using single-photon interference at a beam splitter

A repeat-until-success (RUS) measurement-based scheme for the implementation of the distributed quantum computation by using single-photon interference at a 50:50 beam splitter is proposed. It is shown that the 50:50 beam splitter can naturally project a suitably encoded matter-photon state to either a desired entangling gate-operated state of the matter qubits or to their initial state when the photon is detected. The recurrence of the initial state permits us to implement the desired entangling gate in a RUS way. To implement a distributed quantum computation we suggest an encoding method by means of the effect of dipole-induced transparency proposed recently [E. Waks and J. Vuckovic, Phys. Rev. Lett. 96, 153601 (2006)]. The effects of the unfavorable factors on our scheme are also discussed.

Optimization of positions and currents of tokamak poloidal field coils using genetic algorithms

Plasma equilibrium geometry has a great influence on the confinement and magnetohydrodynamic stability in tokamaks. The poloidal field (PF) system of a tokamak should be optimized to support the prescribed plasma equilibrium geometry. In this paper, a genetic algorithm-based method is applied to solve the optimization of the positions and currents of tokamak PF coils. To achieve this goal, we first describe the free-boundary code EQT Based on the EQT code, a genetic algorithm-based method is introduced to the optimization. We apply this new method to the PF system design of the fusion-driven subcritical system and plasma equilibrium geometry optimization of the Experimental Advanced Superconducting Tokamak (EAST). The results indicate that the optimization of the plasma equilibrium geometry can be improved by using this method.

Quantum computation based on a quantum switch in cavity QED

A feasible scheme for constructing quantum logic gates is proposed on the basis of quantum switches in cavity QED. It is shown that the light field which is fed into the cavity due to the passage of an atom in a certain state can be used to manipulate the conditioned quantum logical gate. In our scheme, the quantum information is encoded in the states of Rydberg atoms and the cavity mode is not used as logical qubits or as a communicating "bus"; thus, the effect of atomic spontaneous emission can be neglected and the strict requirements for the cavity can be relaxed.

Mixed entanglement distillation by means of parity measurements

We present a mixed entanglement distillation protocol by means of the parity measurement of qubits. Without the use of controlled-NOT (CNOT) operations, the efficiency of our protocol can approach that of the CNOT protocol. In comparison, the total successful probability of our protocol can reach a quantity twice as large as that of the linear optics-based protocol.

Temperature dependence of hole spin relaxation in ultrathin InAs monolayers

The temperature dependence of hole spin relaxation time in both neutral and n-doped ultrathin InAs monolayers has been investigated. It has been suggested that D'yakonov-Perel (DP) mechanism dominates the spin relaxation process at both low and high temperature regimes. The appearance of a peak in temperature dependent spin relaxation time reveals the important contribution of Coulomb scatterings between carriers to the spin kinetics at low temperature, though electron-phonon scattering becomes dominant at higher temperatures. Increased electron screening effect in the n-doped sample has been suggested to account for the shortened spin relaxation time compared with the undoped one. The results suggest that hole spins are also promising for building solid-state qubits.

Structure and magnetic characteristics of nonpolar a-plane GaN : Mn films

Diluted magnetic nonpolar GaN:Mn films have been fabricated by implanting Mn ions into unintentionally doped nonpolar a-plane (1 1 (2) over bar 0) GaN films with a subsequent rapid thermal annealing (RTA) process. The structure, morphology and magnetic characteristics of the samples were investigated by means of high-resolution x-ray diffraction (XRD), atomic force microscopy (AFM) and a superconducting quantum interference device (SQUID), respectively. The XRD analysis shows that the RTA process can effectively recover the crystal deterioration caused by the implantation process and that there is no obvious change in the lattice parameter for the as-annealed sample. The SQUID result indicates that the as-annealed sample shows ferromagnetic properties and magnetic anisotropy at room temperature.

Structural and Magnetic Properties of Sm Implanted GaN

The structural and magnetic properties of Sm ion-implanted GaN with different Sm concentrations are investigated. XRD results do not show any peaks associated with second phase formation. Magnetic investigations performed by superconducting quantum interference device reveal ferromagnetic behavior with an ordering temperature above room temperature in all the implanted samples, while the effective magnetic moment per Sm obtained from saturation magnetization gives a much higher value than the atomic moment of Sm. These results could be explained by the phenomenological model proposed by Dhar et al. [Phys. Rev. Lett. 94(2005) 037205, Phys. Rev. B 72(2005) 245203] in terms of a long-range spin polarization of the GaN matrix by the Sm atoms.

Room-temperature ferromagnetism and in-plane magnetic anisotropy characteristics of nonpolar GaN:Mn films

Diluted magnetic nonpolar GaN Mn films have been fabricated by implanting Mn ions into nonpolar aplane (1 1 (2) over bar 0) p-type GaN films and a subsequent rapid thermal annealing process. The ferromagnetism properties of the films were studied by means of superconducting quantum interference device (SQUID). Clearly in-plane magnetic anisotropy characteristics of the sample at 10 K were revealed with the direction of the applied magnetic field rotating along the in-plane [0 0 0 1]-axis. Moreover, obvious ferromagnetic properties of the sample up to 350 K were detected by means of the temperature-dependent SQUID. (C) 2009 Elsevier B.V. All rights reserved.

Room Temperature Ferromagnetism of Mn Implanted AlInN

Ferromagnetic properties of Mn-implanted wurtzite AlxIn1-xN/GaN thin films grown by metal organic chemical vapor deposition (MOCVD) were observed using a quantum design superconducting quantum interference device (SQUID) magnetometer. Hysteresis behavior with a reasonably high saturation magnetic moment at room temperature for all the samples was noted, Two optical thresholds were observed at 1.58 and 2.64 eV, which are attributed to internal transition (E-5 -> T-5(2)) of Mn3+ (d(4)) and hole emission from the neutral Mn acceptor level to the valence band respectively. Bound magnetic polaron formation is considered to be the origin of ferromagnetism in our samples. (c) 2009 The Japan Society of Applied Physics

Influence of implantation energy on the characteristics of Mn-implanted nonpolar a-plane GaN films

Nonpolar GaN Mn films have been fabricated by implanting Mn-ion into nonpolar a-plane (MO) GaN films at room temperature. The influence of implantation energy on the Structural, morphological and magnetic characteristics of samples have been investigated by means of stopping and range of ions in matter (SRIM) Simulation software, high-resolution X-ray diffraction (HRXRD), atomic force microscopy (AFM), and superconducting quantum interference device (SQUID). According to the SQUID analysis, obvious room temperature ferromagnetic properties of samples were detected. Moreover, the implantation energy has little impact on the ferromagnetic properties of samples. The XRD and AFM analyses show that the structural and morphological characteristics of samples were severely deteriorated with the increase of implantation energy. (C) 2008 Elsevier B.V. All rights reserved.