Synthesis of nickel(II) complexes of alpha-isoxazolylazo-beta-diketones and their absorption of spin-coating films and thermal properties for HD-DVD-R

Three kinds of new nickel(II) complexes of alpha-isoxazolylazo-beta-diketones with blue-violet light absorption were synthesized. Their structures were postulated based on elemental analysis, MS and FT-IR spectra. Smooth films on K9 glass substrates were prepared using the spin-coating method. The absorption properties and thermal stability of these complexes were discussed. The static optical recording test for high density digital versatile disc-recordable (HD-DVD-R) system was also studied. (c) 2005 Elsevier B.V. All rights reserved.

Optical properties of nickel(II)-azo complexes thin films for potential application as high-density recordable optical recording media

Smooth thin films of three kinds of nickel(II)-azo complexes were prepared by the spin-coating method. Absorption spectra of the thin films on K9 glass substrate in the 300-600 nn wavelength region were measured. Optical constants (complex refractive index N = n + ik) and thickness of the thin films prepared on single-crystal silicon substrate in the 300-600 nm wavelength region were investigated on rotating analyzer-polarizer type of scanning ellipsometer, and dielectric constants epsilon (epsilon = epsilon(1) + i epsilon(2)), absorption coefficients a as well as reflectance R of thin films were then calculated at 405 nm. In addition, in order to examine the possible use of nickel(II)-azo complex thin film as an optical recording medium, one of the nickel(II)-azo complex thin film prepared on K9 glass substrate with an Ag reflective layer was also studied by atomic force microscopy and static optical recording. The results show that the nickel(II)-azo complex thin film is smooth and has a root mean square surface roughness of 2.25 nm, and the recording marks on the nickel(II)-azo complex thin film are very clear and circular, and their size can reach 200 nn or less. (c) 2006 Elsevier Ltd. All rights reserved.

Rare earth dibenzoylmethane complexes for potential application as high-density recordable optical recording materials

Three kinds of rare earth complexes derived from dibenzoylmethane (DBM) ligand were synthesized by reacting free ligand and different rare earth ions(La (3+), Sm3+ and Gd3+). Their contents and structures were postulated based on elemental analysis, LDI-TOF-MS, FT-IR spectra and UV-Vis spectra. Smooth films on K9 glass substrates were prepared using the spin-coating method. Their solubility in organic solvents, absorption and reflection properties of thin film and thermal stability of these complexes were evaluated. These complexes would be a promising recording material for high-density digital versatile disc-recordable (HD-DVD-R) system. (c) 2007 Elsevier B.V. All rights reserved.

DTADH and quantum critical phenomena caused by anisotropy and external magnetic field for spin-1/2 Heisenberg diamond chains

Using the transfer matrix renormalization group (TMRG) method, we study the connection between the first derivative of the thermal average of driving-term Hamiltonian (DTADH) and the trace of quantum critical behaviors at finite temperatures. Connecting with the exact diagonalization method, we give the phase diagrams and analyze the properties of each phase for both the ferromagnetic and anti-ferromagnetic frustrated J(3) anisotropy diamond chain models. The finite-temperature scaling behaviors near the critical regions are also investigated. Further, we show the critical behaviors driven by external magnetic field, analyze the formation of the 1/3 magnetic plateau and the influence of different interactions on those critical points for both the ferrimagnetic and anti-ferromagnetic distorted diamond chains.

Temperature-dependent transport and spin accumulation in a quantum wire with Rashba spin-orbit interaction

We study the theory of temperature-dependent electron transport, spin polarization, and spin accumulation in a Rashba spin-orbit interaction (RSOI) quantum wire connected nonadiabatically to two normal conductor electrode leads. The influence of both the wire-lead connection and the RSOI on the electron transport is treated analytically by means of a scattering matrix technique and by using an effective free-electron approximation. Through analytical analysis and numerical examples, we demonstrate a simple way to design a sensitive spin-transfer switch that operates without applying any external magnetic fields or attaching ferromagnetic contacts. We also demonstrate that the antisymmetry of the spin accumulation can be destroyed slightly by the coupling between the leads and the wire. Moreover, temperature can weaken the polarization and smear out the oscillations in the spin accumulation.

Carrier spin relaxation in (Ga, Mn) As at room temperature

In this paper, the excitation energy density dependence of carrier spin relaxation is studied at room temperature for the as-grown and annealed (Ga, Mn) As samples using femtosecond time-resolved pump-probe Kerr spectroscopy. It is found that spin relaxation lifetime of electrons lengthens with increasing excitation energy density for both samples, and the annealed ( Ga, Mn) As has shorter carrier recombination and electron spin relaxation lifetimes as well as larger Kerr rotation angle than the as-grown ( Ga. Mn) As under the same excitation condition. which shows that DP mechanism is dominant in the spin relaxation process for ( Ga, Mn)As at room temperature. The enhanced ultrafast Kerr effect in the annealed (Ga,Mn)As shows the potential application of the annealed ( Ga, Mn) As in ultrafast all-optical spin switches, and also provides a further evidence for the p-d exchange mechanism of the ferromagnetic origin of (Ga, Mn) As.

Spin states and persistent currents in a quantum ring with an embedded magnetic impurity

Spin states and persistent currents are investigated theoretically in a quantum ring with an embedded magnetic ion under a uniform magnetic field including the spin-orbit interactions. The magnetic impurity acts as a spin-dependent delta-potential for electrons and results in gaps in the energy spectrum, consequently suppressing the oscillation of the persistent currents. The competition between the Zeeman splittings and the s-d exchange interaction leads to a transition of the electron ground state in the ring. The interplay between the periodic potential induced by the Rashba and Dresselhaus spin-orbit interactions and the delta-potential induced by the magnetic impurity leads to significant variation in the energy spectrum, charge density distribution, and persistent currents of electrons in the ring.

Thermodynamic properties of Cu-3(CO3)(2)(OH)(2) and the spin-1/2 distorted diamond Heisenberg chain

The thermodynamic properties of the spin-1/2 diamond quantum Heisenberg chain model have been investigated by means of the transfer matrix renormalization group (TMRG) method. Considering different crystal structures, by changing the interactions among different spins and the external magnetic fields, we first investigate the magnetic susceptibility, magnetization, and specific heat of the distorted diamond chain as a model of ferrimagnetic spin systems. The susceptibility and the specific heat show different features for different ferromagnetic (F) and antiferromagnetic (AF) interactions and different magnetic fields. A 1/3 magnetization plateau is observed at low temperature in a magnetization curve. Then, we discuss the theoretical mechanism of the double-peak structure of the magnetic susceptibility and the three-peak structure of the specific heat of the compound Cu-3(CO3)(2)(OH)(2), on which an elegant measurement was performed by Kikuchi [Phys. Rev. Lett. 94, 227201 (2005)]. Our computed results are consistent with the main characteristics of the experimental data. Meanwhile, we find that the double-peak structure of susceptibility can be found in several different kinds of spin interactions in the diamond chain. Moreover, a three-peak behavior is observed in the TMRG results of magnetic susceptibility. In addition, we perform calculations relevant for some experiments and explain the characteristics of these materials. (c) 2007 American Institute of Physics.

Spin splitting of conduction subbands in Al0.3Ga0.7As/GaAs/AlxGa1-x As/Al0.3Ga0.7As step quantum wells

By means of the transfer matrix technique, interface-induced Rashba spin splitting of conduction subbands in Al0.3Ga0.7As/GaAs/AlxGa1-xAs/Al0.3Ga0.7As step quantum wells which contain internal structure inversion asymmetry introduced by the insertion of AlxGa1-xAs step potential is investigated theoretically in the absence of electric field and magnetic field. The dependence of spin splitting on the well width, step width and Al concentration is investigated in detail. We find that the sign of the first excited subband spin splitting changes with well width and step width, and is opposite to that of the ground subband under certain conditions. The sign and strength of the spin splitting are shown to be sensitive to the components of the envelope function at three interfaces. Copyright (C) EPLA, 2009

Dyakonov-Perel spin relaxation in InSb/AlxIn(1-x)Sb quantum wells

We investigate theoretically the Dyakonov-Perel spin relaxation time by solving the eight-band Kane model and Poisson equation self-consistently. Our results show distinct behavior with the single-band model due to the anomalous spin-orbit interactions in narrow band-gap semiconductors, and agree well with the experiment values reported in recent experiment [K. L. Litvinenko et al., New J. Phys. 8, 49 (2006)]. We find a strong resonant enhancement of the spin relaxation time appears for spin align along [1 (1) over bar0] at a certain electron density at 4 K. This resonant peak is smeared out with increasing the temperature.

Origin and evolution of photoluminescence from Si nanocrystals embedded in a SiO2 matrix

A detailed analysis of the photoluminescence (PL) from Si nanocrystals (NCs) embedded in a silicon-rich SiO2 matrix is reported. The PL spectra consist of three Gaussian bands (peaks A,B, and C), originated from the quantum confinement effect of Si NCs, the interface state effect between a Si NC and a SiO2 matrix, and the localized state transitions of amorphous Si clusters, respectively. The size and the surface chemistry of Si NCs are two major factors affecting the transition of the dominant PL origin from the quantum confinement effect to the interface state recombination. The larger the size of Si NCs and the higher the interface state density (in particular, Si = O bonds), the more beneficial for the interface state recombination process to surpass the quantum confinement process, in good agreement with Qin's prediction in Qin and Li [Phys. Rev. B 68, 85309 (2003)]. The realistic model of Si NCs embedded in a SiO2 matrix provides a firm theoretical support to explain the transition trend.

Spin and charge currents through a quantum dot connected to ferromagnetic leads

We investigate the spin polarized current through a quantum dot connected to ferromagnetic leads in the presence of a finite spin-dependent chemical potential. The effects of the spin polarization of the leads p and the external magnetic field B are studied. It is found that both the magnitude and the symmetry of the current are dependent on the spin polarization of the leads. When the two ferromagnetic leads are in parallel configuration, the spin polarization p has an insignificant effect on the spin current, and an accompanying charge current appears with the increase of p. When the leads are in antiparallel configuration, however, the effect of p is distinct. The charge current is always zero regardless of the variation of p in the absence of B. The peaks appearing in the pure spin current are greatly suppressed and become asymmetric as p is increased. The applied magnetic field B results in an accompanying charge current in both the parallel and antiparallel configurations of the leads. The characteristics of the currents are explained in terms of the density of states of the quantum dot.

Spin-polarized transport of two-dimensional electron gas embedded in a diluted magnetic semiconductor

The spin-polarized transport property of a diluted magnetic semiconductor two-dimensional electron gas is investigated theoretically at low temperature. A large current polarization can be found in this system even at small magnetic fields and oscillates with increasing magnetic field while the carrier polarization is vanishingly small. The magnitude as well as the sign of the current polarization can be tuned by varying magnetic field, the electron density and the Mn concentration. (c) 2005 American Institute of Physics.

Effect of electron-hole spatial correlation on spin relaxation dynamics in InAs submonolayer

Using time-resolved photoluminescence and time-resolved Kerr rotation spectroscopy, we explore the unique electron spin behavior in an InAs submonolayer sandwiched in a GaAs matrix, which shows very different spin characteristics under resonant and non-resonant excitations. While a very long spin relaxation lifetime of a few nanoseconds at low temperature is observed under non-resonant excitation, it decreases dramatically under resonant excitation. These interesting results are attributed to the difference in electron-hole interactions caused by non-geminate or geminate capture of photo-generated electron-hole pairs in the two excitation cases, and provide a direct verification of the electron-hole spatial correlation effect on electron spin relaxation. (c) 2007 Elsevier Ltd. All rights reserved.

Spin relaxation dynamics in InAs monolayer and submonolayer

By using time-resolved photoluminescence and time-resolved Kerr rotation, we have studied the unique electron spin dynamics in InAs monolayer (ML) and submonolayer (SML), which were sandwiched in GaAs matrix. Under non-resonant excitation, the spin relaxation lifetimes of 3.4 ns and 0.48 ns were observed for 1/3 ML and I ML InAs samples, respectively. More interestingly, the spin lifetime of the 1/3 ML InAs decreased dramatically under resonant excitation, down to 70 ps, while the spin lifetime of the 1 ML sample did not vary much, changing only from 400 to 340 ps. These interesting results come from the different electron-hole interactions caused by different spatial electron-hole correlation, and they provide a direct evidence of the dominant spin relaxation process, i.e. the BAP mechanism. Furthermore, these new results may provide a valuable enlightenment in controlling the spin relaxation and in seeking new material systems for spintronics application.