Taxonomic status of the white-head langur (Trachypithecus francoisi leucoscephalus) inferred from allozyme electrophoresis and random amplified polymorphism DNA (RAPD)

Six sample specimens of Trachypithecus francoisi and 3 of T. leucocephalus were analyzed by use of allozyme electrophoresis and random amplified polymorphism DNA (RAPD) in order to clarify the challenged taxonomic status of the white-head langur. Among the 44 loci surveyed, only 1 locus (PGM-2) was found to be polymorphic. Nei's genetic distance was 0.0025. In total, thirty 10-mer arbitrary primers were used for RAPD analysis, of which 22 generated clear bands. Phylogenetic trees were constructed based on genetic distances using neighbor-joining and UPGMA methods. The results show that T. francoisi and T: leucocephalus are not monophyletic. T. francoisi from Guangxi, China and Vietnam could not be clearly distinguished, and they are not divided into 2 clusters. A t-test was performed to evaluate between genetic distances within and between T. leucocephalus and T. francoisi taxa groups. The statistical test shows that the taxa group within T: leucocephalus and T: francoisi does not significantly differ from that between T: leucocephalus and T: francoisi at the 5% level. Our results suggest that the level of genetic differentiation between T, leucocephalus and T. francoisi is relatively low. Recent gene flow might exist between T. francoisi and T. leucocephalus. Combining morphological features, geographical distribution, allozyme data, RAPD data, and mtDNA sequences, we suggest that the white-head langur might be a subspecies of T. francoisi.

An improved method for the extraction of low molecular weight organic acids in variable charge soils

Due to specific adsorption to variable charge soils, low molecular weight organic acids (LMWOAs) have not been sufficiently extracted, even if common extractants, such as water and 0.1 M sodium hydroxide (NaOH), were employed. In this work, the method for extracting LMWOAs in soils with 0.1 M NaOH was improved for variable charge soils; e.g. 1.0 M potassium fluoride (KF) with pH 4.0 was applied as an extractant jointed with 0.1 M NaOH based on its stronger ability to change the electrochemical properties of variable charge soils by specific adsorption. With the proposed method, the recoveries of oxalic, tartaric, malic, citric and fumaric acids were increased from 83 4, 93 1, 22 2, 63 +/- 5 and 84 +/- 3% to 98 +/- 2, 100 +/- 2, 85 +/- 2, 90 +/- 2 and 89 +/- 2%, respectively, compared with NaOH alone. Simultaneously, the LMWOAs in Agri-Udic Ferrosol with field moisture were measured with a satisfactory result.

Construction and characterization of a novel recombinant single-chain variable fragment antibody against White Spot Syndrome Virus from shrimp

An antibody phage display library against White Spot Syndrome Virus (WSSV) was constructed. After four rounds of panning against WSSV, 192 out of 480 clones displayed WSSV binding activity. One of the positive clones, designated A1, had relatively higher activity specifically binding to WSSV A1-soluble, single-chain fragment variable (scFv) antibody has an affinity constant (K-aff) of 2.02 +/- 0.42 x 10(9) M-1. Dot blot assays showed that A1-soluble scFv could detect WSSV directly from shrimp hemolymph after 24-h feeding infection by WSSV. A1 scFv has potential for the development of a cheap, simple and sensitive diagnostic kit for WSSV in the field. (C) 2003 Elsevier Science B.V. All rights reserved.

A fully three-dimensional atomistic quantum mechanical study on random dopant-induced effects in 25-nm MOSFETs

A fully 3-D atomistic quantum mechanical simulation is presented to study the random dopant-induced effects in nanometer metal-oxide-semiconductor field-effect transistors. The empirical pseudopotential is used to represent the single particle Hamiltonian, and the linear combination of bulk band method is used to solve the million atom Schrodinger equation. The gate threshold fluctuation and lowering due to the discrete dopant configurations are studied. It is found that quantum mechanical effects increase the threshold fluctuation while decreasing the threshold lowering. The increase of threshold fluctuation is in agreement with the researchers' early study based on an approximated density gradient approach. However, the decrease in threshold lowering is in contrast with the density gradient calculations.

An ultra-low power CMOS random number generator

This paper proposes an ultra-low power CMOS random number generator (RING), which is based on an oscillator-sampling architecture. The noisy oscillator consists of a dual-drain MOS transistor, a noise generator and a voltage control oscillator. The dual-drain MOS transistor can bring extra-noise to the drain current or the output voltage so that the jitter of the oscillator is much larger than the normal oscillator. The frequency division ratio of the high-frequency sampling oscillator and the noisy oscillator is small. The RNG has been fabricated in a 0.35 mu m CMOS process. It can produce good quality bit streams without any post-processing. The bit rate of this RNG could be as high as 100 kbps. It has a typical ultra-low power dissipation of 0.91 mu W. This novel circuit is a promising unit for low power system and communication applications. (c) 2007 Elsevier Ltd. All rights reserved.

A 1,000 Frames/s Programmable Vision Chip with Variable Resolution and Row-Pixel-Mixed Parallel Image Processors

A programmable vision chip with variable resolution and row-pixel-mixed parallel image processors is presented. The chip consists of a CMOS sensor array, with row-parallel 6-bit Algorithmic ADCs, row-parallel gray-scale image processors, pixel-parallel SIMD Processing Element (PE) array, and instruction controller. The resolution of the image in the chip is variable: high resolution for a focused area and low resolution for general view. It implements gray-scale and binary mathematical morphology algorithms in series to carry out low-level and mid-level image processing and sends out features of the image for various applications. It can perform image processing at over 1,000 frames/s (fps). A prototype chip with 64 x 64 pixels resolution and 6-bit gray-scale image is fabricated in 0.18 mu m Standard CMOS process. The area size of chip is 1.5 mm x 3.5 mm. Each pixel size is 9.5 mu m x 9.5 mu m and each processing element size is 23 mu m x 29 mu m. The experiment results demonstrate that the chip can perform low-level and mid-level image processing and it can be applied in the real-time vision applications, such as high speed target tracking.

New type of multimode-interference-type thermo-optic variable optical attenuator

A thermo-optic variable optical attenuator (VOA) based on a Mach-Zehnder interferometer and multimode-interference coupler is fabricated. Not a single-mode but a multimode waveguide is used as the input and output structures of the optical field, which greatly reduces the coupling loss of the VOA with a normal single-mode fiber. The insertion loss of the fabricated VOA is 2.52 to 2.82 dB at the wavelength of 1520 to 1570 nm. The polarization dependent loss is 0.28 to 0.45 dB at the same wavelength range. Its maximum attenuation range is up to 26.3 dB when its power consumption is 369 mW. The response frequency of the fabricated VOA is about 10 kHz. (C) 2004 Society of Photo-Optical Instrumentation Engineers.

Thermo-optic variable optical attenuator with low power consumption fabricated on silicon-on-insulator by anisotropic chemical etching

A thermo-optic Mach-Zehnder (MZ) variable optical attenuator based on silicon waveguides with a large cross section was designed and fabricated on silicon-on-insulator (SOI) wafer. Multimode interferometers were used as power splitters and combiners in the MZ structure. In order to achieve a smooth interface, anisotropic chemical etching of silicon was used to fabricate the waveguides. Isolating grooves were introduced to reduce power consumption and device length. The device has a low power consumption of 210 mW and a response time of 50 mus. (C) 2004 Society of Photo-Optical Instrumentation Engineers.

Influence of thermal isolating grooves on the performance of the Mach-Zehnder interferometer-type thermo-optic variable optical attenuator

Two types of silicon-on-insulator thermo-optic variable optical attenuators (VOAs) based on a Mach-Zehnder interferometer and a multimode-interference coupler are fabricated, one with thermal isolating grooves to improve heating efficiency and the other without Comparison of optical and electrical properties, such as insertion losses, the maximum attenuation levels and the corresponding power consumptions, and the response times, is carried out between the two types of VOAs. The comparison results Indicate that use of thermal isolating grooves leads to better values for most characteristics and is an effective way to improve the performance of Mach-Zehnder interferometer-type thermo-optic devices. (c) 2005 Society of Photo-Optical Instrumentation Engineers.

Silicon-on-insulator thermo-optic variable attenuator module with fast response

A thermo-optic variable optical attenuator module composed of a silicon-on-insulator attenuator chip and driving circuit was designed and fabricated. The module exhibited a maximum attenuation of 21.8 dB and a response time of 10 mu s. (c) 2005 Society of Photo-Optical Instrumentation Engineers.

Low power-consumption and high response frequency thermo-optic variable optical Attenuators based on silicon-on-insulator materials

A novel silicon-on-insulator thermo-optic variable optical attenuator with isolated grooves based on a multimode interference coupler principle is fabricated by the inductive coupled plasma etching technology. The maximum fibre-to-fibre insertion loss is lower than 2.2 dB, the dynamic attenuation range is from 0 to 30 dB in the wavelength range 1500-1600 nm, and the maximum power consumption is only 140 mW. The response frequency of the fabricated variable optical attenuator is about 30 kHz. Compared to the variable optical attenuator without isolated grooves, the maximum power consumption decreases more than 220 mW, and the response frequency rises are more than 20 kHz.

Silicon-on-insulator based electro-optic variable optical attenuator with a series structure

An electro-optic variable optical attenuator in silicon-on-insulator is designed and fabricated. A series Structure is used to improve the device efficiency Compared to the attenuator in the single p-i-n diode Structure in the same modulating length, the attenuation range of the device in the series structure improves 2-3 times in the same injecting current density, while the insertion loss is not affected. The maximum dynamic attenuation of the device is greater than 30 dB. The response frequency is obtained to be about 2 MHz.

Probing deep level centers in GaN epilayers with variable-frequency capacitance-voltage characteristics of Au/GaN Schottky contacts

Under identical preparation conditions, Au/GaN Schottky contacts were prepared on two kinds of GaN epilayers with significantly different background electron concentrations and mobility as well as yellow emission intensities. Current-voltage (I-V) and variable-frequency capacitance-voltage (C-V) characteristics show that the Schottky contacts on the GaN epilayer with a higher background carrier concentration and strong yellow emission exhibit anomalous reverse-bias I-V and C-V characteristics. This is attributed to the presence of deep level centers. Theoretical simulation of the low-frequency C-V curves leads to a determination of the density and energy level position of the deep centers. (c) 2006 American Institute of Physics.

Study on variable capacitance diode of (p)nc-Si : H/(n)c-Si heterojunction

Hydrogenated nanocrystalline silicon (nc-Si:H) layers of boron-doped increasing step by step was deposited on n-type crystalline silicon substrate using Plasma Enhanced Chemical Vapor Deposition (PECVD) system. After evaporating Ohm contact electrode on the side of substrate and on the side of nc-Si:H film, a structure of electrode/ (p)nc-Si:H/(n)c-Si/electrode was obtained. It is confirmed by electrical measurement such as I-V curve, C-V curve and DLTS that this is a variable capacitance diode. (C) 2003 Elsevier Science Ltd. All rights reserved.

Multimode-interference-type thermo-optic variable optical attenuator with a response frequency of 10 kHz

A thermo-optic variable optical attenuator based on a multimode interference coupler principle is fabricated. The propagation loss of the fabricated device is 1.6 to 3.8 dB at the wavelength range 1510 to 1610 nm, which is very near the calculated value (1.2 dB) by the finite difference beam propagation method. The maximum power consumption is 363 mW and the dynamic attenuation range is 0 to 26 dB. The response frequency of the fabricated attenuator is about 10 kHz. (C) 2003 Society of Photo-Optical Instrumentation Engineers.