Measuring Receptor/Ligand Interaction at the Single-Bond Level: Experimental and Interpretative Issues

There is increased interest in measuring kinetic rates, lifetimes, and rupture forces of single receptor/ligand bonds. Valuable insights have been obtained from previous experiments attempting such measurements. However, it remains difficult to know with sufficient certainty that single bonds were indeed measured. Using exemplifying data, evidence supporting single-bond observation is examined and caveats in the experimental design and data interpretation are identified. Critical issues preventing definitive proof and disproof of single-bond observation include complex binding schemes, multimeric interactions, clustering, and heterogeneous surfaces. It is concluded that no single criterion is sufficient to ensure that single bonds are actually observed. However, a cumulative body of evidence may provide reasonable confidence. 0 2002 Biomedical Engineering Society.

A coupling model for terrestrial processes in arid areas and its application

In this paper, the importance of investigation on terrestrical processes in arid areas for mankind's living environment protection and local economy development as well as its present state of the art are elucidated. A coupling model, which evaluates heat, mass, momentum and radiative fluxes in the SPAC system, is developed for simulating microclimate over plant and bare soil. Especially, it is focussed on the details of turbulence transfer. For illustration, numerical simulation of the water-heat exchange processes at Shapotou Observatory, GAS, Ninxia Province are conducted, and the computational results show that the laws of land-surface processes are rather typical in the arid areas.

Numerical Analysis of LEC Growth of GaAs with an Axial Magnetic Field

A set of numerical analyses for momentum and heat transfer For a 3 in. (0.075 m) diameter Liquid Encapsulant Czochralski (LEC) growth of single-crystal GaAs with or without all axial magnetic field was carried Out using the finite-element method. The analyses assume a pseudosteady axisymmetric state with laminar floats. Convective and conductive heat transfers. radiative heat transfer between diffuse surfaces and the Navier-Stokes equations for both melt and encapsulant and electric current stream function equations Cor melt and crystal Lire considered together and solved simultaneously. The effect of the thickness of encapsulant. the imposed magnetic field strength as well as the rotation rate of crystal and crucible on the flow and heat transfer were investigated. (C) 2002 Published by Elsevier Science Ltd.

Progress In Modeling Of Fluid Flows In Crystal Growth Processes

Modeling of fluid flows in crystal growth processes has become an important research area in theoretical and applied mechanics. Most crystal growth processes involve fluid flows, such as flows in the melt, solution or vapor. Theoretical modeling has played an important role in developing technologies used for growing semiconductor crystals for high performance electronic and optoelectronic devices. The application of devices requires large diameter crystals with a high degree of crystallographic perfection, low defect density and uniform dopant distribution. In this article, the flow models developed in modeling of the crystal growth processes such as Czochralski, ammonothermal and physical vapor transport methods are reviewed. In the Czochralski growth modeling, the flow models for thermocapillary flow, turbulent flow and MHD flow have been developed. In the ammonothermal growth modeling, the buoyancy and porous media flow models have been developed based on a single-domain and continuum approach for the composite fluid-porous layer systems. In the physical vapor transport growth modeling, the Stefan flow model has been proposed based on the flow-kinetics theory for the vapor growth. In addition, perspectives for future studies on crystal growth modeling are proposed. (c) 2008 National Natural Science Foundation of China and Chinese Academy of Sciences. Published by Elsevier Limited and Science in China Press. All rights reserved.

Numerical Study on Flow Field and Temperature Distribution in Growth Process of 200 mm Czochralski Silicon Crystals

The melt flow and temperature distribution in a 200 mm silicon Czochralski furnace with a cusp magnetic field was modeled and simulated by using a finite-volume based FLUTRAPP ( Fluid Flow and Transport Phenomena Program) code. The melt flow in the crucible was focused, which is a result of the competition of buoyancy, the centrifugal forces caused by the rotations of the crucible and crystal, the thermocapillary force on the free surfaces and the Lorentz force induced by the cusp magnetic field. The zonal method for radiative heat transfer was used in the growth chamber, which was confined by the crystal surface, melt surface, crucible, heat shield, and pull chamber. It was found that the cusp magnetic field could strength the dominant counter-rotating swirling flow cell in the crucible and reduce the flow oscillation and the pulling-rate fluctuation. The fluctuation of dopant and oxygen concentration in the growing crystal could thus be smoothed.

Effects of Thermocapillary Convection on the Growth Process in Industrial 8-inch Silicon Czochralski Growth

Czochralski (CZ) crystal growth process is a widely used technique in manufacturing of silicon crystals and other semiconductor materials. The ultimate goal of the IC industry is to have the highest quality substrates, which are free of point defect, impurities and micro defect clusters. The scale up of silicon wafer size from 200 mm to 300 mm requires large crucible size and more heat power. Transport phenomena in crystal growth processes are quite complex due to melt and gas flows that may be oscillatory and/or turbulent, coupled convection and radiation, impurities and dopant distributions, unsteady kinetics of the growth process, melt crystal interface dynamics, free surface and meniscus, stoichiometry in the case of compound materials. A global model has been developed to simulate the temperature distribution and melt flow in an 8-inch system. The present program features the fluid convection, magnetohydrodynamics, and radiation models. A multi-zone method is used to divide the Cz system into different zones, e.g., the melt, the crystal and the hot zone. For calculation of temperature distribution, the whole system inside the stainless chamber is considered. For the convective flow, only the melt is considered. The widely used zonal method divides the surface of the radiation enclosure into a number of zones, which has a uniform distribution of temperature, radiative properties and composition. The integro-differential equations for the radiative heat transfer are solved using the matrix inversion technique. The zonal method for radiative heat transfer is used in the growth chamber, which is confined by crystal surface, melt surface, heat shield, and pull chamber. Free surface and crystal/melt interface are tracked using adaptive grid generation. The competition between the thermocapillary convection induced by non-uniform temperature distributions on the free surface and the forced convection by the rotation of the crystal determines the interface shape, dopant distribution, and striation pattern. The temperature gradients on the free surface are influenced by the effects of the thermocapillary force on the free surface and the rotation of the crystal and the crucible.

Laser intensity effects in photoemission and photoelectron spectra produced in laser-induced autoionisation

Strong laser-field-induced autoionisation in the presence of both photoionising and radiative decay of the autoionising state (AS) is investigated, focusing on the laser intensity dependence of the photoemission and photoelectron spectra. In contrast to previous predictions, power broadening and increasing reduction of the doublet peak heights with field strength are found in the photoemission spectrum. Similar effects leading to considerable suppression and even complete disappearance of the lowest-order peaks in the photoelectron spectrum, together with peak switching, are also demonstrated, which are closely related to above-threshold ionisation. In addition, it is suggested that the total number of energetic photoelectrons may serve as an alternative to measuring the atomic parameters of the AS. All these effects are attributed to the presence of the strong `probe': laser-induced decay of the AS.

Radiation damping effects on the ultrashort x-ray pulses generated by nonlinear Thomson backscattering

Nonlinear Thomson backscattering of an intense Gaussian laser pulse by a counterpropagating energetic electron is investigated by numerically solving the electron equation of motion taking into account the radiative damping force. The backscattered radiation characteristics are different for linearly and circularly polarized lasers because of a difference in their ponderomotive forces acting on the electron. The radiative electron energy loss weakens the backscattered power, breaks the symmetry of the backscattered-pulse profile, and prolongs the duration of the backscattered radiation. With the circularly polarized laser, an adjustable double-peaked backscattered pulse can be obtained. Such a profile has potential applications as a subfemtosecond x-ray pump and probe with adjustable time delay and power ratio. (c) 2006 American Institute of Physics.

OBSERVATION OF CAVITY QUANTUM-ELECTRODYNAMIC EFFECTS IN A ND-GLASS MICROSPHERE

In a Nd:glass microspherical cavity the enhancement and inhibition of spontaneous-emission processes that are due to cavity QED effects have been observed. The rates of the enhanced spontaneous emission are location dependent and reach a maximum value of more than 10(3) times the free-space value. The large enhancement strongly modifies the decay processes of Nd ions in glass, and the radiative properties of Nd:glass have been changed. As a result a new spectrum including new lasing wavelengths in the Nd:glass sphere has been observed.

K9玻璃薄膜对离子交换磷酸盐玻璃波导表面保护的优化研究

采用镀K9玻璃薄膜方法来解决离子交换掺铒磷酸盐玻璃波导表面的侵蚀问题,对K9玻璃薄膜的厚度进行了优化研究。测量分析了样品的荧光光谱和荧光寿命,采用光学显微镜和棱镜耦合技术对不同K9玻璃薄膜厚度下制备波导的表面形貌和导光特性进行了表征和测试。结果表明,与掺铒磷酸盐玻璃原材料相比,镀K9玻璃薄膜后荧光光谱保持不变,荧光寿命稍有下降(约0.2 ms);K9玻璃薄膜的厚度在60~80 nm的范围内保护效果最佳。为下一步制备掺铒有源玻璃光波导器件奠定了良好的实验基础。

970nm抽运下Tm^3／Yb^3＋共掺氧氟玻璃的频率上转换发光

稀土离子掺杂的氧氟玻璃是一种新型上转换发光材料。制备了Tm^3／Yb^3＋单掺、共掺的摩尔分数为n（SiO2）-0．30，n（PbF2）-0．50，n=（Al2O3）=0．15，n（AlF3）=（0．049-x），n（TmF3）=y，n（YbF3）=x（x=0，0．001，0．010，0．015，0．020，y=0，0．001）系统氧氟玻璃，研究了其上转换发光特性、分析了其上转换发光机理。研究发现，在970nm抽运光源激发下，Tm^3＋单掺时没有可见光上转换发射；而加入Yb^3＋后产生了强的蓝光（452n

铒离子浓度对掺Er^3＋碲酸盐玻璃的Judd-Ofelt理论参数的影响

制备了四种不同铒离子掺杂浓度的碲酸盐玻璃，通过测定吸收光谱计算了吸收谱线的振子强度，根据Judd-Ofelt理论计算了不同浓度下Er^3＋离子发光光谱的强度参数Ω（i=2，4，6），计算了自发辐射电偶和磁偶跃迁概率、辐射寿命、荧光分支比等参数，讨论了Er^3＋离子浓度变化对以上这些参数的影响。测试了Er^3＋：^4I13／2→^4I15／2跃迁对应的荧光光谱和Er^3＋：^4I13／2能级荧光寿命。最后应用McCumber理论计算了玻璃中Er^3＋：^4I13／2→^4I15／2跃迁对应的受激发射截面大小

新型掺铒离子氧氟碲酸盐玻璃的光谱性质

探求新的具有优良的热学和光学性能的基质玻璃系统，是获得具有宽带宽和增益平坦的掺Er^3＋光纤放大器（EDFA）的一种有效途径。制备了一种新型氧氟碲酸盐玻璃TeO2-BaF2-LaF3，并对其热学性能和光学性质进行了测试。应用乍得-奥菲尔特（Judd-Ofelt）理论计算了Er^3＋离子的J-O理论参量和荧光寿命r。探讨了氟化物的引入对碲酸盐玻璃结构的改变的影响，并分析了其对玻璃的热学性质和光学性质的影响。实验发现，获得的氧氟碲酸盐玻璃具有优良的热学稳定性（△T=156.6C），宽的荧光半峰全宽（72nm）