Long-term changes of planktonic rotifers in a subtropical Chinese lake dominated by filter-feeding fishes

1. The long-term changes (1956-1998) in density and species composition of planktonic rotifers were studied at two sampling stations (I, II) of Lake Donghu, a shallow eutrophic Chinese Lake densely stocked with filter-feeding fishes. Annual average densities of rotifers increased with an increase in fish yield and eutrophication, whilst species number decreased from 82 in 1962-1963 to 62 in 1994-1998. 2. During 1962-98, some species such as Anuraeopsis fissa, Polyarthra spp. (including P. dolichoptera & P. vulgaris), Trichocerca pusilla and Synchaeta oblonga increased their percentage in abundance remarkably, whilst the proportion of Keratella cochlearis decreased at two relatively eutrophic stations from 19 to 4.2% at Station I and from 30 to 3.2% at Station IL 3. The high r(max) of A. fissa probably made it more successful than other rotifers under high predation pressure by planktivorous fish. The decrease in the K. cochlearis population might be attributed partly to predation by Cyclops vicinus. 4. Small rotifers were less vulnerable to fish predation than large-sized cladocerans. Decreases in cladocerans coincided with increases in rotifers, suggesting that the indirect effect of fish predation on cladocerans might have partly contributed to the population development of rotifers in Lake Donghu during recent decades. 5. We also conducted surveys (1994-1998) of seasonal dynamics of rotifers at four sampling stations (I-IV) which have varied in trophic status after fragmentation of the lake in the 1960s. A total of 75 species were identified at the four stations. Both densities and biomass of rotifers were considerably higher in the two more eutrophic stations than in the two less eutrophic stations. This indicates that the population increase of rotifers at Stations I and II during recent decades might be partly attributed to eutrophication of the lake water.

Photoluminescence studies of type-II self-assembled InAlAs/AlGaAs QDs grown on (311)A GaAs substrate

The photoluminescence (PL) spectra of self-assembled In0.55Al0.45As/Al0.45Ga0.5As quantum dots (QD) grown on (311)A GaAs substrate were measured. The type- I character of PL related to the X valley was verified by excitation power dependence of peak position and the PL spectra under different pressure , which was attributed to the type- II transition from X valley in Al0.5Ga0.5As to heavy holes in In0.55Al0.45As The high energy Gamma -related transition was also observed above 70K and assigned as the transition between Gamma valley and heavy holes in In-0.55 Al0.45As. The X-valley split was discussed to interpret the observed second X-related peak under pressure.

咪唑衍生物为配体的铜(I)配合物合成及光物理性质

本论文以咪唑衍生物为配体,合成了新型Cu(I)中性配合物和对应的离子型配合物，考察了它们的光物理和电化学性质。具体工作如下： 设计与合成了分别以2-(2'-吡啶基)苯并咪唑(Hpbm)和2-(2'-喹啉基)苯并咪唑(Hqbm)为配体的Cu(I)中性配合物和四氟硼酸根为抗衡离子的离子型配合物。配合物的晶体结构表明中心铜离子均为扭曲的四面体配位构型，中性配合物的咪唑环中的键长趋于平均化。所有配合物在20wt%浓度的PMMA薄膜中的最大发射处于518.5-597.5nm之间，发光效率为0.097-0.249, 磷光寿命为11.7-25.9µs。中性配合物与对应的离子型配合物相比，其紫外可见吸收光谱发生红移，光致发光光谱发生蓝移。 以2, 2'-联苯并咪唑为配体(H2dbm)，设计和合成了双核和单核Cu(I)配合物，其中双核配合物Cu2(dbm)(PPh3)4在二氯甲烷溶液和PMMA (20 wt%)薄膜中均表现为蓝光发射，在20wt%浓度的PMMA薄膜中的最大发射为448.5和475.5nm。单核离子型配合物[Cu(Hdbm)(PPh3)]2[BF4]在20wt%浓度的PMMA薄膜中的最大发射分别为511，发光效率分别为0.150, 磷光寿命分别为12.0。

Experimental Study on the Subthreshold Swing of Silicon Nanowire Transistors

SOI based wrap-gate silicon nanowire FETs are fabricated through electron beam lithography and wet etching. Dry thermal oxidation is used to further reduce the patterned fins cross section and transfer them into nanowires. Silicon nanowire FETs with different nanowire widths varying from 60 nm to 200 nm are fabricated and the number of the nanowires contained in a channel is also varied. The on-current (I-ON) and off-current (I-OFF) of the fabricated silicon nanowire FET are 0.59 mu A and 0.19 nA respectively. The subthreshold swing (SS) and the drain induced barrier lowering are 580 mV/dec and 149 mVN respectively due to the 30 nm thick gate oxide and 1015 cm(-3) lightly doped silicon nanowire channel. The nanowire width dependence of SS is shown and attributed to the fact that the side-gate parts of a wrap gate play a more effectual role as the nanowires in a channel get narrower. It seems the nanowire number in a channel has no effect on SS because the side-gate parts fill in the space between two adjacent nanowires.