ON THE ANALYSIS OF THE END-NOTCHED FLEXURE SPECIMEN FOR MEASURING MODE-II FRACTURE-TOUGHNESS OF COMPOSITE-MATERIALS

This paper deals with the correction of mode II strain energy release rate, G(II), of composite laminates measured with the end-notched flexure (ENF) specimen. A derivation is given of the expressions for compliance and strain energy release rate, in whic

MBE growth of very short period InAs/GaSb type-II superlattices on (001) GaAs substrates

First, GaSb epilayers were grown on (001) GaAs substrates by molecular beam epitaxy. We determined that the GaSb layers had very smooth surfaces using atomic force microscopy. Then, very short period InAs/ GaSb superlattices (SLs) were grown on the GaSb buffer layer. The optical and crystalline properties of the superlattices were studied by low-temperature photoluminescence spectra and high resolution transition electron microscopy. In order to determine the interface of SLs, the samples were tested by Raman-scattering spectra at room temperature. Results indicated that the peak wavelength of SLs with clear interfaces and integrated periods is between 2.0 and 2.6 mu m. The SL interface between InAs and GaSb is InSb-like.