UV-B-induced Oxidative Damage and Protective Role of Exopolysaccharides in Desert Cyanobacterium Microcoleus vaginatus

UV-B-induced oxidative damage and the protective effect of exopolysaccharides (EPS) in Microcoleus vaginatus, a cyanobacterium isolated from desert crust, were investigated. After being irradiated with UV-B radiation, photosynthetic activity (Fv/Fm), cellular total carbohydrates, EPS and sucrose production of irradiated cells decreased, while reducing sugars, reactive oxygen species (ROS) generation, malondialdehyde (MDA) production and DNA strand breaks increased significantly. However, when pretreated with 100 mg/L exogenous EPS, EPS production in the culture medium of UV-B stressed cells decreased significantly; Fv/Fm, cellular total carbohydrates, reducing sugars and sucrose synthase (SS) activity of irradiated cells increased significantly, while ROS generation, MDA production and DNA strand breaks of irradiated cells decreased significantly. The results suggested that EPS exhibited a significant protective effect on DNA strand breaks and lipid peroxidation by effectively eliminating ROS induced by UV-B radiation in M. vaginatus.

Expressional induction of Paralichthys olivaceus cathepsin B gene in response to virus, poly I:C and lipopolysaccharide

Cathepsin B is a lysosomal cysteine protease of the papain-like enzyme family with multiple biological functions. In this study, Paralichthys olivaceus cathepsin B (PoCatB) cDNA was isolated from flounder embryonic cells (FEC) treated with UV-inactivated grass carp hemorrhage virus (GCHV) and subsequently identified as a vitally induced gene. The full length cDNA of PoCatB is 1801 bp encoding 330-amino acids. The deduced protein has high homology to all known cathepsin B proteins, containing an N-terminal signal peptide, cysteine protease active sites, the occluding loop segment and a glycosylation site, all of which are conserved in the cathepsin B family. PoCatB transcription of FEC cells could be induced by turbot (Scophthalmus maximus) rhabdovirus (SMRV), UV-inactivated SMRV, UV-inactivated GCHV, poly I:C or lipopolysaccharide (LPS), and SMRV or poly I:C was revealed to be most effective among the five inducers. In normal flounder, PoCatB mRNA was detectable in all examined tissues. Moreover, SMRV infection could result in significant upregulation of PoCatB mRNA, predominantly in spleen, head kidney, posterior kidney, intestine, gill and muscle with 18.2,10.9, 24.7,12, 31.5 and 18 fold increases at 72 h post-infection respectively. These results provided the first evidence for the transcriptional induction of cathepsin B in fish by virus and LPS, indicating existence of a novel function in viral defense. (C) 2008 Elsevier Ltd. All rights reserved.

The response of antioxidant systems in Nostoc sphaeroides against UV-B radiation and the protective effects of exogenous antioxidants

UV radiation is one of many harmful factors found in space that are detrimental to organisms on earth in space exploration. In the present work, we examined the role of antioxidant system in Nostoc sphaeroides Kutz (Cyanobacterium) and the effects of exogenously applied antioxidant molecules on its photosynthetic rate under UV-B radiation. It was found that UV-B radiation promoted the activity of antioxidant system to protect photosystem 11 (PSII) and exogenously applied antioxidant: sodium nitroprusside (SNP) and N-acetylcysteine (NAC) had an obvious protection on PSII activity under UV-B radiation. The activity of superoxide dismutase (SOD, EC 1.15.1.1), catalase (CAT, EC 1.11.1.6), peroxidase (POD, EC 1.11.1.7) and content of NIDA (malondialdehyde) and ASC (ascorbate) were improved by 0.5 mM and 1 mM SNP, but 0.1 mM SNP decreased the activity of antioxidant system. Addition of exogenous NAC decreased the activity of SOD, POD, CAT and the content MDA and ASC. In contrast, exogenously applied NAC increased GSH content. The results suggest that exogenous SNP and NAC may protect algae by different mechanisms: SNP may play double roles as both sources of reactive free radicals as well as ROS scavengers in mediating the protective role of PSII on algae under UV-B radiation. On the other hand, NAC functions as an antioxidant or precursor of glutathione, which could protect PSII directly from UV-B radiation. (c) 2007 COSPAR, Published by Elsevier Ltd. All rights reserved.

InAs self-assembled quantum dots grown on an InP (311)B substrate by molecular beam epitaxy

Self-assembled InAs quantum dots (QDs) have been grown by solid-source molecular beam epitaxy on a (311)B InP substrate. Transmission electron microscopy clearly shows that a high density of smaller InAs islands can be obtained by using such a high index substrate. After introducing a lattice-matched underlying In0.52Al0.24Ga0.24As layer, the InAs QDs are much more uniform in size and form two-dimensional well ordered arrays. The photoluminescence (PL) spectra also confirm that the InAs QDs grown on underlying In0.52Al0.24Ga0.24As have a better quality than those grown in the In0.52Al0.48As matrix. A simple calculation indicates that the redshift of the PL peak energy mainly results from InAs QDs on underlying In0.52Al0.24Ga0.24As of large size. (C) 2001 American Institute of Physics.

The effect of substrate orientation on the morphology of InAs nanostructures on (001) and (11n)A/B(n=1-5) InP substrates

Strained InAs nanostructures have been grown by solid-source molecular beam epitaxy in In0.52Al0.48As matrix on different InP substrate surfaces ((0 0 1) and (1 1 n)A/B (n = 1 - 5)). The morphology of the nanostructures was characterized using atomic force microscopy (AFM). The AFM results reveal interesting differences in the size, shape, and alignment of the nanostructures between different oriented surfaces. It was found that some faceted nanostructures tend to form on A-type surfaces, the shape and the alignment of these nanostructures show clear dependence on the substrate orientation. Samples grown on (0 0 1) and B-type surfaces showed preferentially dense round dots. Dots formed on (1 1 3)B, (1 1 3)B and (1 1 5)B surfaces have a higher dot density and size homogeneity, which shows a potential for the production of high-quality and customized self-assembled quantum dots for photonics applications. (C) 2000 Elsevier Science B.V. All rights reserved.

Two-dimensional ordering of self-assembled InAs quantum dots grown on (311)B InP substrate

Self-assembled InAs quantum dots (QDs) in InAlAs grown on (001) and (311)B InP substrates by molecular beam epitaxy (MBE) have been comparatively investigated. A correlated study of atomic force microscopy (AFM) and photoluminescence (PL) disclosed that InAs QDs grown on high-index InP substrates can lead to high density and uniformity. By introducing a lattice-matched InAlGaAs overlayer on InAlAs buffer, still more dense and uniform InAs QDs were obtained in comparison with InAs QDs formed with only InAlAs matrix. Moreover, two-dimensional well-ordered InAs dots with regular shape grown on (311)B InP substrates are reported for the first time. We explained this exceptional phenomenon from strain energy combined with kinetics point of view. (C) 2000 Elsevier Science B.V. All rights reserved.

Photoluminescence investigation of GaInP/GaAs multiple quantum wells grown on (001) and (311) B GaAs surfaces by gas source molecular beam epitaxy

Photoluminescence (PL) investigation was carried out on GaInP/GaAs multiple quantum wells structures grown on (001) and (311) B surfaces of GaAs by gas source molecular beam epitaxy. Superlattice structures of GaAs/GaInP grown on (001) GaAs substrate were also studied in comparison. Deep-level luminescence was seen to dominate the PL spectra from the quantum wells and superlattice structures that were grown on (001) GaAs substrate. In contrast, superior optical properties were exhibited in the same structures grown on (311) B GaAs surfaces. The results suggested that GaAs/GaInP quantum well structures on (311) B oriented substrates could efficiently suppress the deep-level emissions, result in narrower PL peaks indicating smooth interfaces. (C) 1998 American Institute of Physics.

SHIFTING PHOTOLUMINESCENCE BANDS IN HIGH-RESISTIVITY LI-COMPENSATED GAAS

It is shown that Li diffusion of GaAs can give rise to semi-insulating samples with electrical resistivity as high as 10(7) OMEGAcm in undoped, n-type, and p-type starting materials. The optical properties of the compensated samples are correlated with the depletion of free carriers caused by the Li diffusion. The radiative recombination of the Li-compensated samples is dominated by emissions with excitation-dependent peak positions that shift to lower energies with increasing compensation. The photoluminescence properties are characteristic of fluctuations of the electrostatic potential in strongly doped, compensated crystals.

ENVIRONMENTAL EVOLUTION OF ORDOS DESERT IN CHINA SINCE 1.1MA B. P. AS INDICATED BY YULIN STRATIGRAPHICAL SECTION AND ITS GRAIN-SIZE ANALYSIS RESULTS

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