Infrared (1.2-1.6 mu m) luminescence in Yb, Cr : YAG with 940 nm diode pumping

Infrared (1.2-1.6 mum) luminescence in a yttrium aluminium garnet (YAG) crystal, co-doped with Yb (10 at.%) and Cr (0.05 at.%) ions, was investigated under CW laser diode pumping (lambda = 940 nm). The Cr4+ emission band was observed with its peak at 1.35 mum and measured to be about 6% with respect to Yb3+ IR luminescence (lambda = 1.03 mum). Analysis of the crystal absorption and luminescence spectra allows one to conclude that Yb3+-Cr4+ energy transfer is a mechanism responsible for the B-3(2)(T-3(2))-B-3(1)((3)A(2)) emission of Cr4+ ions. This crystal is promising as an efficient source of the near infrared emission. (C) 2004 Elsevier B.V. All rights reserved.

Intense upconversion and infrared emissions in Er3+;Yb3+ codoped Lu2 Si O5 and (Lu0.5 Gd0.5)2 Si O5 crystals

High optical quality Lu2SiO5 (LSO) and (Lu0.5Gd0.5)(2)SiO5 (LGSO) laser crystals codoped with Er3+ and Yb3+ have been fabricated by the Czochralski method. Intense upconversion (UC) and infrared emission (1543 nm) are observed under excitation of 975 nm. The luminescence processes are explained and the emission efficiencies are quantitatively obtained by measuring the UC efficiency and calculating the emission cross section. The temperature-dependent optical properties of the crystals are also investigated. Our study indicates that Er3+-Yb3+ : LSO and Er3+-Yb3+: LGSO crystals are promising gain media for developing the solid-state 1.5 mu m optical amplifiers and tunable UC lasers. (c) 2008 American Institute of Physics.

Role of Bi3+ ions for Er3+ ions efficient 1.54 mu m light emission in Er/Bi codoped SiO2 thin film prepared by sol-gel method

Er/Bi codoped SiO2 thin films were prepared by sol-gel method and spin-on technology with subsequent annealing process. The bismuth silicate crystal phase appeared at low annealing temperature while vanished as annealing temperature exceeded 1000 degrees C, characterized by X-ray diffraction, and Rutherford backscattering measurements well explained the structure change of the films, which was due to the decrease of bismuth concentration. Fine structures of the Er3+-related 1.54 mu m light emission (line width less than 7 nm) at room temperature was observed by photoluminescence (PL) measurement. The PL intensity at 1.54 gm reached maximum at 800 degrees C and decreased dramatically at 1000 degrees C. The PL dependent annealing temperature was studied and suggested a clear link with bismuth silicate phase. Excitation spectrum measurements further reveal the role of Bi3+ ions for Er3+ ions near infrared light emission. Through sol-gel method and thermal treatment, Bi3+ ions can provide a perfect environment for Er3+ ion light emission by forming Er-Bi-Si-O complex. Furthermore, energy transfer from Bi3+ ions to Er3+ ions is evidenced and found to be a more efficient way for Er3+ ions near infrared emission. This makes the Bi3+ ions doped material a promising application for future erbium-doped waveguide amplifier and infrared LED

1.54 mu m infrared photoluminescence and electroluminescence from an erbium organic compound

Infrared emission at 1.54 mu m excited optically and electrically from an erbium organic compound tris(acetylacetonato)(1,10-phenanthroline) erbium [Er(acac)(3)(phen)] is observed. The rare-earth complex is dispersed into a polymer matrix of poly(N-vinylcarbazole) (PVK) to fabricate an electroluminescent (EL) device with an ITO/PVK:Er(acac)(3)(phen)/Al:Li/Ag structure, where ITO represents indium-tin-oxide-coated glass. The device shows infrared EL emission at 1.54 mu m, which suggests a simple and cheap method to obtain a light source for 1.54-mu m-wavelength devices in optical communications. (C) 2000 American Institute of Physics. [S0021-8979(00)00301-7].

Energy transfer between silicon-oxygen-related defects and Yb3+ in transparent glass ceramics containing Ba2TiSi2O 8 nanocrystals

We report on the conversion of near-ultraviolet radiation of 250-350 nm into near-infrared emission of 970-1100 nm in Yb3+-doped transparent glass ceramics containing Ba2TiSi2O8 nanocrystals due to the energy transfer from the silicon-oxygen-related defects to Yb3+ ions. Efficient Yb3+ emission (F-2(5/2)-> F-2(7/2)) was detected under the excitation of defects absorption at 314 nm. The occurrence of energy transfer is proven by both steady state and time-resolved emission spectra, respectively, at 15 K. The Yb2O3 concentration dependent energy transfer efficiency has also been evaluated, and the maximum value is 65% for 8 mol % Yb2O3 doped glass ceramic. These materials are promising for the enhancement of photovoltaic conversion efficiency of silicon solar cells via spectra modification.

Optical gain at 1550 nm from colloidal solution of Er3+-Yb3+ codoped NaYF4 nanocubes

We demonstrated optical amplification at 1550 nm with a carbon tetrachloride solution of Er3+-Yb3+ codoped NaYF4 nanocubes synthesized with solvo-thermal route. Upon excitation with a 980 nm laser diode, the nanocube solution exhibited strong near-infrared emission by the I-4(13/2) -> I-4(15/2) transition of Er3+ ions due to energy transfer from Yb3+ ions. We obtained the highest optical gain coefficient at 1550 nm of 0.58 cm(-1) for the solution with the pumping power of 200 mW. This colloidal solution might be a promising candidate as a liquid medium for optical amplifier and laser at the optical communication wavelength. (C) 2009 Optical Society of America

Upconversion properties of TM3+/Yb3+ codoped fluorophosphate glasses with low phonon density of states

Fluorophosphate glasses codoped with Tm3+ and Yb3+ were prepared and their thermal stability, phonon states, and upconversion properties were studied. It is found that the increment of phosphate content is good for the thermal stability but increases the phonon density of states. However, the phonon density of states of these fluorophosphate glasses is very low due to the low phosphate content in their composition. The upconversion luminescence spectra were measured under excitation of 970 nm laser diode, and the intense blue (476 nm) and near infrared (794 nm) emission were simultaneous obtained at room temperature. The sensitizing mechanisms of Yb3+ to Tm3+ for blue and red emission contain both sequential and cooperative sensitization. The near infrared emission is a two-photon upconversion process. These researches suggest that when the phosphate content in the composition is low enough, fluorophosphate glass can be suitable host material of Tm3+ codoped with Yb3+ for blue and near infrared upconversion luminescence. (c) 2005 Elsevier B.V All rights reserved.

Spectroscopic properties and thermal stability of Er3+/Yb3+-codoped fluorophosphate glasses

A comprehensive study on the thermal stability and spectroscopic properties of Er3+/Yb3+-codoped Al(PO3)(3)-based fluorophosphate glasses is reported of the 1.5μ m fibre amplifiers in this paper. From optical absorption spectra, the Judd-Ofelt parameters of Er3+ in the glasses and several important optical properties, such as the radiative transition probability, the branching ratio and the spontaneous emission probability, have been calculated by using Judd-Ofelt theory. The fluorophosphate glass exhibits broadband near-infrared emission at 1.53μ m with a full width at half-maximum over 63nm, and a large calculated stimulated-emission cross-section of 6.85 x 10(-21)cm(2).

碱金属和碱土金属氟化物对掺Er^3＋氟磷酸盐玻璃光谱性质的影响

研究了碱金属和碱土金属离子修饰的掺Er^3＋氟磷酸盐玻璃的光谱性质，讨论了碱金属和碱土金属对铒氟磷玻璃的吸收和发射截面、荧光半高宽，Judd-Ofelt强度参数和上转换发光强度等光谱性质的影响，并与一些传统氧化物玻璃系统进行了比较．研究表明碱金属K^＋和碱土金属Sr^2＋掺杂高的玻璃更适宜用作光放大器基质．含12mol％K^＋的氟磷玻璃展现出7．83×10^-21cm^2的高发射截面和最小的荧光上转换强度；含23mol％Sr^2＋的氟磷玻璃则有7．58×10^-21cm^2的高发射截面、65nm的荧光半高

Yb掺杂的YAlO<3/sub>单晶体的温梯法生长和光谱性能

The dark-brown colored 5 at% Yb-doped YAlO3 (Yb:YAP) single crystal was grown successfully by temperature gradient technique (TGT) for the first time. The TGT-grown Yb:YAP crystal with the perovskite structure and excellent crystallization perfection were confirmed by the X-ray diffractions techniques. The dark-brown color of TGT-Yb:YAP crystal turned into the colorless after annealing in the air at 1200 degrees C for 10h. The absorption spectra, LD-excited infrared emission and X-ray excited luminescence spectra of the air-annealed Yb:YAP single crystal were investigated at the room temperature. The results indicate that the TGT-Yb:YAP single crystals can be used for the laser and scintillation applications. (c) 2005 Elsevier B.V. All rights reserved.

Investigations on bismuth and aluminum co-doped germanium oxide glasses for ultra-broadband optical amplification

The broadband luminescence covering 1.2-1.6 mu m was observed from bismuth and aluminum co-doped germanium oxide glasses pumped by 808 nm laser at room temperature. The spectroscopic properties of GeO2:Bi,Al glasses strongly depend on the glass compositions and the pumping sources. To a certain extent, the Al3+ ions play as dispersing reagent for the infrared-emission centers in the GeO2:Bi,Al glasses. The broad infrared luminescence with a full width at half maximum larger than 200 nm and a lifetime longer than 200 mu s possesses these glasses with the potential applications in broadly tunable laser sources and ultra-broadband fiber amplifiers in optical communication field. (c) 2005 Elsevier B.V. All rights reserved.

The growth temperatures dependence of optical and electrical properties of InN films

InN films grown on sapphire at different substrate temperatures from 550 degrees C to 700 degrees C by metalorganic chemical vapor deposition were investigated. The low-temperature GaN nucleation layer with high-temperature annealing (1100 degrees C) was used as a buffer for main InN layer growth. X-ray diffraction and Raman scattering measurements reveal that the quality of InN films can be improved by increasing the growth temperature to 600 degrees C. Further high substrate temperatures may promote the thermal decomposition of InN films and result in poor crystallinity and surface morphology. The photoluminescence and Hall measurements were employed to characterize the optical and electrical properties of InN films, which also indicates strong growth temperature dependence. The InN films grown at temperature of 600 degrees C show not only a high mobility with low carrier concentration, but also a strong infrared emission band located around 0.7 eV. For a 600 nm thick InN film grown at 600 degrees C, the Hall mobility achieves up to 938 cm(2)/Vs with electron concentration of 3.9 x 10(18) cm(-3).

Syntheses, crystal structures, visible and near-IR luminescent properties of ternary lanthanide (Dy3+, Tm3+) complexes containing 4,4,4-trifluoro-1-phenyl-1,3-butanedione and 1,10-phenanthroline

The ligands 4,4,4-trifluoro-1-phenyl-1.3-butanedione (Hbfa) and 1,10-phenanthroline (phen) were used to prepare ternary lanthanide (Ln) complexes [Dy(bfa)(3)phen and Tm(bfa)(3)phen]. Crystal data: Dy(bfa)(3)phen C(42)H(26)FqN(2)O(6)Dy, triclinic, P (1) over bar, a= 9.9450(6) angstrom, b = 14.0944(9) angstrom, c = 14.6043(9) angstrom, alpha = 82.104(1)degrees, beta = 87.006(1)degrees, gamma = 76.490(1)degrees, V = 1971.1(2)angstrom(3), Z = 2; Tm(bfa)(3)phen C42H26F9N2O6Tm, triclinic, P (1) over bar, a = 9.898(5)angstrom, b = 13.918(5)angstrom, c = 14.753(5)angstrom, a = 83.517(5)degrees, alpha = 86.899(5)degrees, gamma = 76.818(5)degrees, V = 1965.3(14)angstrom(3), Z = 2. The coordination number of the central Ln(3+) (Ln = Dy, Tm) ion is eight, with six oxygen atoms from three Hbfa ligands and two nitrogen atoms from the phen ligand.

Spectroscopic studies on charge transfer from Ce3+, to Yb3+ in KMgF3 : Ce, Yb nanocrystals

Nanocrystals of KMgF3 single-doped and codoped with Ce3+ or/and Yb3+ were synthesized separately by the microemulsion method. The X-ray diffraction(XRD) patterns were indexed to show that the KMgF, crystal system was unchanged. The fluorescent spectra of KMgF3:Ce, Yb polycrystal powders were studied and compared with those of the Ce, Yb doped KMgF3 crystals produced using the high-temperature solid phase method. The diffuse reflection spectra and infrared. emission of KMgF3:Ce, Yb were investigated. From the results, the authors could confirm that there were charge transfer processes from Ce3+ to Yb3+ in both KMgF3: Ce,Yb nanocrystals and polycrystal powders.

Blue emission from Eu2+ -doped high silica glass by near-infrared femtosecond laser irradiation

Eu2+-doped high silica glass (HSG) is fabricated by sintering porous glass which is impregnated with europium ions. Eu2+-doped HSG is revealed to yield intense blue emission excited by ultraviolet (UV) light and near-infrared femtosecond laser. The emission profile obtained by UV excitation can be well traced by near-infrared femtosecond laser. The upconversion emission excited by 800 nm femtosecond laser is considered to be related to a two-photon absorption process from the relationship between the integrated intensity and the pump power. A tentative scheme of upconverted blue emission from Eu2+-doped HSG was also proposed. The HSG materials presented herein are expected to find applications in high density optical storage and three-dimensional color displays. (c) 2008 American Institute of Physics.