Room-temperature spin-oriented photocurrent under near-infrared irradiation and comparison of optical means with Shubnikov de-Haas measurements in AlXGa1-XN/GaN heterostructures

The admixture of linear and circular photogalvanic effects and (CPGEs) in AlxGa1-xN/GaN heterostructures has been investigated quantitatively by near-infrared irradiation at room temperature. The spin-based photocurrent that the authors have observed solidly indicates the sizable spin-orbital interaction of the two-dimensional electron gas in the heterostructures. Further analysis shows consistency between studies by optical and magnetic (Shubnikov de-Haas) measurements on the spin-orbital coupling effects among different AlxGa1-xN/GaN heterostructures, indicating that the CPGE measurement is a good way to investigate the spin splitting and the spin polarization in semiconductors. (C) 2007 American Institute of Physics.

Two opposite gradients of hole density in as-grown and annealed (Ga,Mn)As layers

The depth distribution of the hole density p in 500 nm-thick (Ga,Mn)As layers is investigated. From Raman scattering spectra, it is found that the gradients of p are opposite in the as-grown and annealed layers. At the region around the free surface, with increasing etching depth, p significantly increases in the as-grown layer; however, p decreases distinctly in the annealed layer. Then, in the bulk, p becomes almost homogeneous for both cases. The etching-depth dependence of Curie temperature obtained from magnetic measurements is in agreement with the distribution characterization of p. These results suggest that annealing induces outdiffusion of Mn interstitials towards the free surface, and incomplete outdiffusion during the growth leads to an accumulation of Mn interstitials around the free surface of the as-grown (Ga,Mn)As. (c) 2006 Elsevier B.V. All rights reserved.

Morphological defects and uniformity issues of 4H-SiC homoepitaxial layers grown on off-oriented (0001)Si faces

The morphological defects and uniformity of 4H-SiC epilayers grown by hot wall CVD at 1500 degrees C on off-oriented (0001) Si faces are characterized by atomic force microscope, Nomarski optical microscopy, and Micro-Raman spectroscopy. Typical morphological defects including triangular defects, wavy steps, round pits, and groove defects are observed in mirror-like SiC epilayers. The preparation of the substrate surface is necessary for the growth of high-quality 4H-SiC epitaxial layers with low-surface defect density under optimized growth conditions. (c) 2006 Elsevier Ltd. All rights reserved.

Photoluminescence study of InAlAs quantum dots grown on differently oriented surfaces

We reported the optical properties of self-assembled In0.55Al0.45As quantum dots grown by molecular beam epitaxy on (001) and (n11)A/B(n = 3,5)GaAs substrates. Two peaks were observed in the photoluminescence (PL) spectra from quantum dots in the (001) substrate and this suggested two sets of quantum dots different in size. For quantum dots in the high-index substrates, the PL spectra were related to the atomic-terminated surface (A or B substrate). The peaks for the B substrate surfaces were in the lower energy position than that for the (001) and A type. In addition, quantum dots in the B substrate have comparatively high quantum efficiency. These results suggested that high-index B-type substrate is more suitable for the fabrication of quantum dots than (001) and A-type substrates at the same growth condition. (C) 2000 American Vacuum Society. [S0734-211X(00)04701-6].

Raman scattering studies of III-V semiconductors grown on [n11]-oriented substrates

The room temperature Raman spectra of the Ga(0.5)Al(0.5)AS and the In0.52Al0.48As epilayer grown on [n11]-oriented substrates were measured in various back scatterng geometries, The relative intensity of TO modes and LO modes in those samples shows a regular Variation with differently oriented substrates in the experiments. By comparing experimental data with Raman scattering selection rules for the zincblende structure epilayer grown on [n11]-oriented substrates, it was found that the present calculations are in good agreement with the experimental results.

Optical anisotropy of InAs monolayer in (311)-oriented GaAs matrix

In-plane optical anisotropy which comes from the heavy hole and the light hole transitions in an InAs monolayer inserted in (311)-oriented GaAs matrix is observed by reflectance difference spectroscopy. The observed steplike density of states demonstrates that the InAs layer behaves like a two-dimensional quantum well rather than isolated quantum dots. The magnitude of the anisotropy is in good agreement with the intrinsic anisotropy of (311) orientation quantum wells, indicating that there is little structural or strain anisotropy of the InAs layer grown on (311)-oriented GaAs surface.

Morphological defects and uniformity issues of 4H-SiC homoepitaxial layers grown on off-oriented (0001)Si faces

The morphological defects and uniformity of 4H-SiC epilayers grown by hot wall CVD at 1500 degrees C on off-oriented (0001) Si faces are characterized by atomic force microscope, Nomarski optical microscopy, and Micro-Raman spectroscopy. Typical morphological defects including triangular defects, wavy steps, round pits, and groove defects are observed in mirror-like SiC epilayers. The preparation of the substrate surface is necessary for the growth of high-quality 4H-SiC epitaxial layers with low-surface defect density under optimized growth conditions. (c) 2006 Elsevier Ltd. All rights reserved.

Homoepitaxial growth and MOS structures of 4H-SiC on off oriented n-type (0001)Si-faces

Homoepitaxial growth of 4H-SiC on off-oriented n-type Si-face (0001) substrates was performed in a home-made hot-wall low pressure chemical vapor deposition (LPCVD) reactor with SiH4 and C2H4 at temperature of 1500 C and pressure of 20 Torr. The surface morphology and intentional in-situ NH3 doping in 4H-SiC epilayers were investigated by using atomic force microscopy (AFM) and secondary ion mass spectroscopy (SIMS). Thermal oxidization of 4H-SiC homoepitaxial layers was conducted in a dry O-2 and H-2 atmosphere at temperature of 1150 C. The oxide was investigated by employing x-ray photoelectron spectroscopy (XPS). 4H-SiC MOS structures were obtained and their C-V characteristics were presented.

Effect of channel surface wettability and temperature gradients on the boiling flow pattern in a single microchannel

The objective of this paper is to investigate the effects of channel surface wettability and temperature gradients on the boiling flow pattern in a single microchannel. The test section consists of a bottom silicon substrate bonded with a top glass cover. Three consecutive parts of an inlet fluid plenum, a central microchannel and an outlet fluid plenum were etched in the silicon substrate. The central microchannel had a width of 800 mu m and a depth of 30 mu m. Acetone liquid was used as the working fluid. High outlet vapor qualities were dealt with here. The flow pattern consists of a fluid triangle (shrinkage of the liquid films) and a connected long liquid rivulet, which is generated in the central microchannel in the timescale of milliseconds. The peculiar flow pattern is formed due to the following reasons: (1) the liquid rivulet tends to have a large contact area with the top hydrophilic channel surface of the glass cover, but a smaller contact area with the bottom silicon hydrophobic surface. (2) The temperature gradient in the chip width direction at the top channel surface of the glass cover not only causes the shrinkage of the liquid films in the central microchannel upstream, but also attracts the liquid rivulet populated near the microchannel centerline. (3) The zigzag pattern is formed due to the competition between the evaporation momentum forces at the vapor-liquid interfaces and the force due to the Marangoni effect. The former causes the rivulet to deviate from the channel centerline and the latter draws the rivulet toward the channel centerline. (4) The temperature gradient along the flow direction in the central microchannel downstream causes the breakup of the rivulet to form isolated droplets there. (5) Liquid stripes inside the upstream fluid triangle were caused by the small capillary number of the liquid film, at which the large surface tension force relative to the viscous force tends to populate the liquid film locally on the top glass cover surface.

Some properties of gallium nitride films grown on (0001) oriented sapphire substrates by gas source molecular beam epitaxy

The Raman and photoreflectivity spectra of gallium nitride (GaN) films grown on (0001) oriented sapphire substrates by gas source molecular beam epitaxy (GSMBE) have been investigated. The Raman spectra showed the presence of the E-2(high) mode and a shift in the wavenumber of this mode with respect to the GaN epilayer thickness. The Raman scattering results suggest the presence of stress due to lattice and thermal expansion misfit in the films, and also indicate that the buffer layer play an important role in the deposition of high quality GaN layers. The residual stress changes from tensile to compressive as the epilayer thickness increases. Samples subjected to anneal cycles showed an increase in the mobility due probably to stress relaxation as suggested by an observed shift in the E-2(high) mode in the Raman spectra after annealing.

Aluminum induced crystallization of strongly (111) oriented polycrystalline silicon thin film and nucleation analysis

A polycrystalline silicon thin film was fabricated on glass substrate by means of aluminum induced crystallization (AIC). Al and alpha-Si layers were deposited by magnetron sputtering respectively and annealed at 480A degrees C for 1 h to realize layer exchange. The polycrystalline silicon thin film was continuous and strongly (111) oriented. By analyzing the structure variation of the oxidation membrane and lattice mismatch between gamma-Al2O3 and Si, it was concluded that aluminum promoted the formation of (111) oriented silicon nucleus by controlling the orientation of gamma-Al2O3, which was formed at the early stage of annealing.

Investigations of phase inversion and frictional pressure gradients in upward and downward oil–water flow in vertical pipes

The present study has attempted to investigate phase inversion and frictional pressure gradients during simultaneous vertical flow of oil and water two-phase through upward and downward pipes. The liquids selected were white oil (44 mPa s viscosity and 860 kg/m3 density) and water. The measurements were made for phase velocities varying from 0 to 1.24 m/s for water and from 0 to 1.87 m/s for oil, respectively. Experiments were carried either by keeping the mixture velocity constant and increasing the dispersed phase fraction or by keeping the continuous phase superficial velocity constant and increasing the dispersed phase superficial velocity. From the experimental results, it is shown that the frictional pressure gradient reaches to its lower value at the phase inversion point in this work. The points of phase inversion are always close to an input oil fraction of 0.8 for upward flow and of 0.75 for downward flow, respectively. A few models published in the literature are used to predict the phase inversion point and to compare the results with available experimental data. Suitable methods are suggested to predict the critical oil holdup at phase inversion based on the different viscosity ratio ranges. Furthermore, the frictional pressure gradient is analyzed with several suitable theoretical models according to the existing flow patterns. The analysis reveals that both the theoretical curves and the experimental data exhibit the same trend and the overall agreement of predicted values with experimental data is good, especially for a high oil fraction.

Synthesis, structure, and optical properties of a contorted (110)-oriented layered hybrid perovskite: C3H11SN3PbBr4

The < 110 >-oriented perovskite is very rare in the hybrid perovskites family. In this work, an unusual layered < 110 >-oriented hybrid perovskite, which is stabilized by a special organic ligand, 2-(aminoethyl)isothiourea, has been obtained. This ligand combines a primary amine and a formamidine on the two ends of one molecule. Introduction of the special ligand brings about contorted inorganic sheets in the hybrid perovskite structure. The optical properties of the new < 110 >-oriented perovskite were studied.