82 resultados para Harvesting stage


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Changing the ratio of light-harvesting pigments was regarded as an efficient way to improve the photosynthesis rate in microalgae, but the underlying mechanism is still unclear. In the present study, a mutant of Anabeana simensis (called SP) was selected from retrieved satellite cultures. Several parameters related with photosynthesis, such as the growth, photosynthesis rate, the content of photosynthetic pigment, low temperature fluorescence spectrum (77K) and electron transport rate, were compared with those of the wild type. It was found that the change in the ratio of light-harvesting pigments in the mutant led to more efficient light energy transfer and usage in mutant than in the wild type. This may be the reason why the mutant had higher photosynthesis and growth rates.

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A systemic study was initiated to identify stage-specific expression genes in fish embryogenesis by using suppression subtractive hybridization (SSH) technique. In this study, we presented a preliminary result on screen for stage-specific expression genes between tail bud stage (TBS) and heartbeat beginning stage (HBS) in gynogenetic silver crucian carp (Carassius auratus gibelio). Two SSH plasmid libraries specific for TBS embryos and HBS embryos were constructed, and stage-specific expression genes were screened between the two stages. 1963 TBS positive clones and 2466 HBS positive clones were sampled to PCR amplification, and 1373 TBS and 1809 HBS PCR positive clones were selected to carry out dot blots. 169 TBS dot blot positive clones and 272 HBS dot blot positive clones were sequenced. Searching GenBank by using these nucleotide sequences indicated that most of the TBS dot blot positive clones could not be found homologous sequences in the database, while known genes were mainly detected from HBS dot blot positive clones. Of the 79 known genes, 20 were enzymes or kinases involved in important metabolism of embryonic development. Moreover, specific expressions of partial genes were further confirmed by virtual northern blots. This study is the first step for making a large attempt to study temporal and spatial control of gene expression in the gynogenetic fish embryogenesis.

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The V/III ratio in the initial growth stage of metalorganic chemical vapor deposition has an important influence on the quality of a GaN epilayer grown on a low-temperature AIN buffer layer and c-plane sapphire substrate. A weaker yellow luminescence, a narrower half-width of the X-ray diffraction peak, and a higher electron mobility result when a lower V/III ratio is taken. The intensity of in situ optical reflectivity measurements indicates that the film surface is rougher at the beginning of GaN growth, and a longer time is needed for the islands to coalesce and for a quasi-two dimensional mode growth to start. A comparison of front- and back-illuminated photoluminescence spectra confirms that many threading dislocations are bent during the initial stage, leading to a better structural quality of the GaN layer. (C) 2007 Elsevier B.V. All rights reserved.

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Morphology of Gallium Nitride (GaN) in initial growth stage was observed with atomic force microscopy (AFM) and scanning electron microscopy (SEM), It was found that the epilayer developed from islands to coalesced film. Statistics based on AFM observation was carried out to investigate the morphology characteristics. It was found that the evolution of height distribution could be used to describe morphology development. Statistics also clearly revealed variation of top-face growth rate among islands. Indium-doping effect on morphology development was also statistically studied. The roughening and smoothing behavior in morphology development was explained. (C) 2002 Elsevier Science B.V. All rights reserved.

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Based on morphology observed by atomic force microscopy, a geometrical model was proposed in order to explain the statistical results obtained from morphology observation on GaN in initial growth stage. Four parameters were introduced to describe the morphology characteristics in this model. Least-square fitting of height distribution was performed. The height distribution derived from the model agreed well with that obtained from experimental records. It was also found that the model should be further advanced to understand the growth of GaN in initial growth stage. (C) 2002 Elsevier Science BY. All rights reserved.

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Three minutes' growth was carried out to investigate the indium-doping effect on initially grown GaN. Indium-doped and undoped samples were grown by low-pressure metalorganic vapor phase epitaxy. Atomic force microscope observation revealed that In-doping modified the morphology of the nuclei. Indium-doping also enhanced wetting between the buffer and nuclei layers, which was also supported by optical transmission. Photoluminescence suggested that indium-doping obviously enhanced band-edge related emission even in the nucleation stage. X-ray diffraction performed on samples grown for 20 minutes indicated improvement of the crystalline quality through indium-doping. The mechanism of the indium-doping effect was discussed.

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It is believed that during the initial stage of diamond film growth by chemical-vapor deposition (CVD), ion bombardment is the main mechanism in the bias-enhanced-nucleation (BEN) process. To verify such a statement, experiments by using mass-separated ion-beam deposition were carried out, in which a pure carbon ion beam, with precisely defined low energy, was selected for investigating the ion-bombardment effect on a Si substrate. The results are similar to those of the BEN process, which supports the ion-bombardment-enhanced-nucleation mechanism. The formation of sp(3) bonding is based on the presumption that the time of stress generation is much shorter than the duration of the relaxation process. The ion-bombarded Si is expected to enhance the CVD diamond nucleation density because the film contains amorphous carbon embedded with nanocrystalline diamond and defective graphite. (C) 2001 American Institute of Physics.

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This paper presents a direct digital frequency synthesizer (DDFS) with a 16-bit accumulator, a 4th-order single-stage pipelined delta-sigma interpolator and a 300MS/s 12-bit current-steering DAC based on Q(2) Random Walk switching scheme. The delta-sigma interpolator is used to reduce the phase truncation error and the ROM size. The measured spurious-free dynamic range (SFDR) is greater than 80 dB for 8-bit phase value and 12-bit sine-amplitude output. The DDFS prototype is fabricated in a 0.35um CMOS technology with core area of 1.11mm(2).

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This paper presents a new and original method for dynamical analysis of multistage cyclic structures such as turbomachinery compressors or turbines. Each stage is modeled cyclically by its elementary sector and the interstage coupling is achieved through a cyclic recombination of the interface degrees of freedom. This method is quite simple to set up; it allows us to handle the finite element models of each stage's sector directly and, as in classical cyclic symmetry analysis, to study the nodal diameter problems separately. The method is first validated on a simple case study which shows good agreements with a complete 360 deg reference calculation. An industrial example involving two HP compressor stages is then presented. Then the forced response application is presented in which synchronous engine order type excitations are considered.

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Chinese Academy of Sciences (ISCAS)