Wide-band polarization-insensitive high-output-power semiconductor optical amplifier based on thin tensile-strained bulk InGaAs

A polarization-insensitive semiconductor optical amplifier (SOA) with a very thin active tensile-strained InGaAs bulk has been fabricated. The polarization sensitivity of the amplifier gain is less than 1 dB over both the entire range of driving current and the 3 dB optical bandwidth of more than 80 nm. For optical signals of 1550 nm wavelength, the SOA exhibits a high saturation output power +7.6 dBm together with a low noise figure of 7.5 dB, fibre-to-fibre gain of 11.5 dB, and low polarization sensitivity of 0.5 dB. Additionally, at the gain peak 1520 nm, the fibre-to-fibre gain is measured to be 14.1 dB.

Monolithically integrated semiconductor optical amplifier and electroabsorption modulator with dual-waveguide spot-size converter input and output

We have demonstrated an electroabsorption modulator and semiconductor optical amplifier monolithically integrated with novel dual-waveguide spot-size converters (SSC) at the input and output ports for low-loss coupling to a planar light-guide circuit silica waveguide or cleaved single-mode optical fibre. The device was fabricated by means of selective-area MOVPE growth, quantum well intermixing and asymmetric twin waveguide technologies with only a three-step low-pressure MOVPE growth. For the device structure, in the SOA/EAM section, a double ridge structure was employed to reduce the EAM capacitances and enable high bit-rate operation. In the SSC sections, buried ridge structure (BRS) was incorporated. Such a combination of ridge, ATG and BRS structure is reported for the first time in which it can take advantage of easy processing of the ridge structure and the excellent mode characteristic of BRS. At the wavelength range of 1550-1600 nm, lossless operation with extinction ratios of 25 dB dc and more than 10 GHz 3 dB bandwidth is successfully achieved, The beam divergence angles of the input and output ports of the device are as small as 8.0 degrees x 12.6 degrees, resulting in 3.0 dB coupling loss with a cleaved single-mode optical fibre.

Monolithically integrated laser diode and electroabsorption modulator with dual-waveguide spot-size converter input and output

We have demonstrated a 1.60 mu m ridge-structure laser diode and electroabsorption modulator monolithically integrated with buried-ridge-structure dual-waveguide spot-size converters at the input and output ports for low-loss coupling to a cleaved single-mode optical fibre by means of selective area growth and asymmetric twin waveguide technologies. The devices emit in single transverse and quasi-single longitudinal modes with a side mode suppression ratio of 25.6 dB. These devices exhibit 3 dB modulation bandwidth of 15.0 GHz and modulator extinction ratios of 14.0 dB dc. The output beam divergence angles of the spot-size converter in the horizontal and vertical directions are as small as 7.3 degrees x 10.6 degrees, respectively, resulting in 3.0 dB coupling loss with a cleaved single-mode optical fibre.

Enhancement of the far-field output power and the properties of the very-small-aperture lasers

We report on a VSAL structure fabricated by a 650 nm edge emitting laser diode with an Au-coated facet and an aperture size of 250 x 500 nm. The far field output power can maintain at 1 mW and the power density is 7.5 mW/mu m(2). Some properties of the VSAL including the threshold current change, the red-shift of the spectral position, and the strong relative-intensity-noise are presented. The physical mechanisms responsible for these phenomena are also discussed, which may contribute to the understanding and application of the potential device for near-field optics.

2-ps passively mode-locked Nd : YVO4 laser using an output-coupling-type semiconductor saturable absorber mirror

We have demonstrated stable self-starting passive mode-locking in a diode-end-pumped Nd: YVO4 laser using a semiconductor saturable absorber mirror (SESAM). An ln(0.25)Ga(0.75)As single quantum-well SESAM, which was grown by the metalorganic chemical-vapor deposition technique at low temperature, acts as a passive mode-locking device and an output coupler at the same time. Continuous-wave mode-locked transform-limited pulses were obtained at 1064 nm with a pulse duration of 2.1 ps and an average output power of 1.28 W at a repetition rate of 96.5 MHz. (c) 2005 American Institute of Physics.

Passive mode locking of diode-end-pumped Nd : GdVO4 laser with an In0.25Ga0.75As output coupler

Passive mode locking of a diode-pumped Nd:GdVO4 laser was demonstrated using In0.25Ga0.75As as saturable absorber as well as output coupler. The pulse width was measured to be about 16 ps with a repetition rate of 146 MHz. The average output power was 120 mW with pump power of 6 W. To our knowledge, this is the first demonstration on a passively mode-locked Nd:GdVO4 laser by using an In0.25Ga0.75As output coupler. (C) 2004 Elsevier B.V. All rights reserved.

1-mm gate periphery AlGaN/AIN/GaN HEMTs on SiC with output power of 9.39 W at 8 GHz

AlGaN/AlN/GaN high electron mobility transistor (HEMT) structures with high mobility GaN channel layer were grown on 50 min diameter semi-insulating (SI) 6H-SiC substrates by metalorganic chemical vapor deposition and large periphery HEMT devices were fabricated and characterized. High two-dimensional electron gas mobility of 2215 cm(2)/V s at room temperature with sheet electron concentration of 1.044 x 10(13)/cm(2) was achieved. The 50 mm diameter HEMT wafer exhibited a low average sheet resistance of 251.0 Omega/square, with the resistance uniformity of 2.02%. Atomic force microscopy measurements revealed a smooth AlGaN surface with a root-mean-square roughness of 0.27 nm for a scan area of 5 mu mi x 5 pm. The 1-mm gate width devices fabricated using the materials demonstrated a very high continuous wave output power of 9.39 W at 8 GHz, with a power added efficiency of 46.2% and power gain of 7.54 dB. A maximum drain current density of 1300 mA/mm, an extrinsic transconductance of 382 mS/mm, a current gain cutoff frequency of 31 GHz and a maximum frequency of oscillation 60 GHz were also achieved in the same devices. (C) 2007 Elsevier Ltd. All rights reserved.

Passively Q-switched Nd : GdVO4 laser with In0.25Ga0.75As being an output coupler

We report a diode-end-pumped passively Q-switched Nd:GdVO4 laser operating at 1.06 mu m with In0.25Ga0.75As being the saturable absorber as well as an output coupler. Q-switched pulses with a pulse duration of 20 ns, pulse energy 4.2 mu J and pulse repetition rate 200 kHz were produced, corresponding to peak power of 210 W. (c) 2006 Elsevier Ltd. All rights reserved.

Passively Q-switched and mode-locked diode-pumped Nd : YVO4 laser with LT-GaAs output coupler

We have demonstrated an efficient and compact passively Q-switched and mode-locked (QML) 1064 nm Nd:YVO4 laser by using a low temperature grown GaAs (LT-GaAs) saturable absorber as well as an output coupler. Stable QML with envelope duration as short as 10 ns and Q-switched repetition rate of 36 kHz was obtained. It is the shortest envelope duration as far as we know, and it is so short that it can be used as Q-switching pulses directly. At 6.9 W of the incident pump power, average output power of 1.24 W was achieved and the corresponding peak power and energy of a single Q-switched pulse were 3.44 kW and 34.4 mu J, respectively. The mode-locked pulses inside the Q-switched pulse envelope had a repetition rate of 780 MHz. (C) 2005 Elsevier B.V. All rights reserved.

1.55-mu m Ridge DFB laser and electroabsorption modulator integrated with buried-ridge-stripe dual-waveguide spot-size converter output

A 1.55-mu m ridge distributed feedback laser and electroabsorption modulator monolithically integrated with a buried-ridge-stripe dual-waveguide spot-size converter (SSC) at the output port for low-loss coupling to a cleaved single-mode optical fiber was fabricated by means of selective area growth, quantum-well intermixing, and dual-core technologies. These devices exhibit threshold current of 28 mA, 3-dB modulation bandwidth of 12.0 GHz, modulator extinction ratios of 25.0-dB dc. The output beam divergence angles of the SSC in the horizontal and vertical directions are as small as 8.0 degrees x 12.6 degrees, respectively, resulting in 3.2-dB coupling loss with a cleaved single-mode optical fiber.

Influence of output waveguide on mode quality factor in semiconductor microlasers with an equilateral triangle resonator

Semiconductor microlasers with an equilateral triangle resonator (ETR) and an output waveguide are proposed and analyzed by the finite-difference time-domain technique and the Pade approximation. The numerical results show that microlasers with an output waveguide still have a high-quality factor (Q factor) and are suitable to realize directional emission. For the ETR with a 0.46-mum-width opening in one of the vertices connected to the output waveguide, we have the Q factor of 1.5x10(3) and 2.5x10(2) for the TM fundamental mode at the wavelength of 1.55 mum, as the side length of the ETR is 5 and 3 mum. The simulated intensity distributions are presented for the fundamental mode in the ETR with a side length of 3 mum and an opening of 0.23 mum. (C) 2000 American Institute of Physics. [S0003-6951(00)01749-6].

Quantum-dot superluminescent diode: A proposal for an ultra-wide output spectrum

We propose a novel superluminescent diode (SLD) with a quantum dot (QD) active layer, which should give a wider output spectrum than a conventional quantum well SLD. The device makes use of inhomogeneous broadness of gain spectrum resulting from size inhomogeneity of self-assembled quantum dots grown by Stranski-Krastanow mode. Taking a design made out in the InxGa1-xAs/GaAs system for example, the spectrum characteristics of the device are simulated realistically, 100-200 nm full width of half maximum of output spectrum can be obtained. The dependence of the output spectrum on In composition, size distribution and injection current of the dots active region is also elaborated.

Influence of lateral propagating modes on laser output characteristics in selectively oxidized vertical cavity surface-emitting lasers with double oxide layers

The influence of lateral propagating modes on the threshold current and the spontaneous emission factor in selectively oxidized vertical cavity surface-emitting lasers (VCSELs) is investigated based on the mode behaviors of lateral propagating modes and the rate equation model. The numerical results show that the lateral propagating modes may be trapped in the aperture region for the selectively oxidized VCSEL with two oxide layers, one above and one below the active region. The output characteristics of VCSELs can be affected due to the reabsorption of the quasitrapped lateral propagating modes. A lower threshold current can be expected for a VCSEL with double oxide layers than that with a single oxide layer. The numerical results of rate equations also show that a larger spontaneous emission factor can be obtained by fitting the output-input curves for the VCSEL with double oxide layers. (C) 1999 American Institute of Physics. [S0021-8979(99)07919-0].

Analysis of output coupling efficiencies for directional emission triangle and square microlasers

Output coupling efficiencies are analyzed for triangular and square microlasers connected with an output waveguide by FDTD simulation. The results show that square resonator with an output waveguide connected to the midpoint of one side can have high output coupling efficiency and a good mode selection.

High-output very small aperture laser and its near-field distribution properties - art. no. 60200L

A Very-Small-Aperture Laser with a 250 X 500 nm(2) aperture has been created on a 650nm edge emitting LD. The highest far-field output power is 1.9mW and the power per unit emission area is about 15 MW/mu m(2). The special fabrication process and high output power mechanism are demonstrated respectively. The near-field distribution properties are also analyzed theoretically and experimentally.