Direct observation of coherent spin transfer processes in an InGaAs/GaAs quantum well via two-color time-resolved Kerr rotation measurements

A two-color time-resolved Kerr rotation spectroscopy system was built, with a femtosecond Ti:sapphire laser and a photonic crystal fiber, to study coherent spin transfer processes in an InGaAs/GaAs quantum well sample. The femtosecond Ti:sapphire laser plays two roles: besides providing a pump beam with a tunable wavelength, it also excites the photonic crystal fiber to generate supercontinuum light ranging from 500 nm to 1600 nm, from which a probe beam with a desirable wavelength is selected with a suitable interference filter. With such a system, we studied spin transfer processes between two semiconductors of different gaps in an InGaAs/GaAs quantum well sample. We found that electron spins generated in the GaAs barrier were transferred coherently into the InGaAs quantum well. A model based on rate equations and Bloch-Torrey equations is used to describe the coherent spin transfer processes quantitatively. With this model, we obtain an effective electron spin accumulation time of 21 ps in the InGaAs quantum well.

Silicon-on-insulating multi-layers for total-dose irradiation hardness

Silicon-on-insulating multi-layer (SOIM) materials were fabricated by co-implantation of oxygen and nitrogen ions with different energies and doses. The multilayer microstructure was investigated by cross-sectional transmission electron microscopy. P-channel metal-oxide-semiconductor (PMOS) transistors and metal-semiconductor-insulator-semiconductor (MSIS) capacitors were produced by these materials. After the irradiated total dose reaches 3 x 10(5) rad (Si), the threshold voltage of the SOIM-based PMOS transistor only shifts 0.07 V, while thin silicon-on-insulating buried-oxide SIMOX-based PMOS transistors have a shift of 1.2V, where SIMOX represents the separated by implanted oxygen. The difference of capacitance of the SOIM-based MSIS capacitors before and after irradiation is less than that of the thin-box SIMOX-based MSIS capacitor. The results suggest that the SOIM materials have a more remarkable irradiation tolerance of total dose effect, compared to the thin-buried-oxide SIMOX materials.

Monolithically integrated semiconductor optical amplifier and electroabsorption modulator with dual-waveguide spot-size converter input and output

We have demonstrated an electroabsorption modulator and semiconductor optical amplifier monolithically integrated with novel dual-waveguide spot-size converters (SSC) at the input and output ports for low-loss coupling to a planar light-guide circuit silica waveguide or cleaved single-mode optical fibre. The device was fabricated by means of selective-area MOVPE growth, quantum well intermixing and asymmetric twin waveguide technologies with only a three-step low-pressure MOVPE growth. For the device structure, in the SOA/EAM section, a double ridge structure was employed to reduce the EAM capacitances and enable high bit-rate operation. In the SSC sections, buried ridge structure (BRS) was incorporated. Such a combination of ridge, ATG and BRS structure is reported for the first time in which it can take advantage of easy processing of the ridge structure and the excellent mode characteristic of BRS. At the wavelength range of 1550-1600 nm, lossless operation with extinction ratios of 25 dB dc and more than 10 GHz 3 dB bandwidth is successfully achieved, The beam divergence angles of the input and output ports of the device are as small as 8.0 degrees x 12.6 degrees, resulting in 3.0 dB coupling loss with a cleaved single-mode optical fibre.

Lossless electroabsorption modulator monolithically rntegrated with a semiconductor optical amplifier and dual-wavegulde spot-size converters

Semiconductor optical amplifier and electroabsorption modulator monolithically integrated with dual-waveguide spot-size converters at the input and output ports is demonstrated by means of selective area growth, quantum-well intermixing, and asymmetric twin waveguide technologies. At the wavelength range of 1550 similar to 1600 nm, lossless operation with extinction ratios of 25-dB dc and 11.8-dB radio frequency and more than 10-GHz 3-dB modulation bandwidth is successfully achieved. The output beam divergence angles of the device in the horizontal and vertical directions are as small as 7.3 degrees x 10.6 degrees, respectively, resulting in 3.0-dB coupling loss with cleaved single-mode optical fiber.

Low power-consumption and high response frequency thermo-optic variable optical Attenuators based on silicon-on-insulator materials

A novel silicon-on-insulator thermo-optic variable optical attenuator with isolated grooves based on a multimode interference coupler principle is fabricated by the inductive coupled plasma etching technology. The maximum fibre-to-fibre insertion loss is lower than 2.2 dB, the dynamic attenuation range is from 0 to 30 dB in the wavelength range 1500-1600 nm, and the maximum power consumption is only 140 mW. The response frequency of the fabricated variable optical attenuator is about 30 kHz. Compared to the variable optical attenuator without isolated grooves, the maximum power consumption decreases more than 220 mW, and the response frequency rises are more than 20 kHz.

Broad-band semiconductor optical amplifiers

Broad-band semiconductor optical amplifiers (SOAs) with different thicknesses and thin bulk tensile-strained active layers were fabricated and studied. Amplified spontaneous emission (ASE) spectra and gain spectra of SOAs were measured and analyzed at different CW biases. A maximal 3 dB ASE bandwidth of 136 nm ranging from 1480 to 1616 nm, and a 3 dB optical amplifier gain bandwidth of about 90 nm ranging from 1510 to 1600 nm, were obtained for the very thin bulk active SOA. Other SOAs characteristics such as saturation output power and polarization sensitivity were measured and compared. (c) 2006 Elsevier B.V. All rights reserved.

Electroabsorption modulated semiconductor optical amplifier monolithically integrated with spot-size converters

We have demonstrated an electroabsorption modulator (EAM) and semiconductor optical amplifier (SOA) monolithically integrated with novel dual-waveguide spot-size converters (SSCs) at the input and output ports for low-loss coupling to planar light-guide circuit silica waveguide or cleaved single-mode optical fiber. The device is fabricated by means of selective-area MOVPE growth (SAG), quantum well intermixing (QWI) and asymmetric twin waveguide (ATG) technologies with only three steps low-pressure MOVPE growth. For the device structure, in SOA/EAM section, double ridge structure was employed to reduce the EAM capacitances and enable high bit-rate operation. In the SSC sections, buried ridge stripe (BRS) were incorporated. Such a combination of ridge, ATG and BRS structure is reported for the first time in which it can take advantage of both easy processing of ridge structure and the excellent mode characteristic of BRS. At the wavelength range of 1550-1600 nm, lossless operation with extinction ratios of 25 dB DC and more than 10 GHz 3-dB bandwidth is successfully achieved. The beam divergence angles of the input and output ports of the device are as small as 8.0 degrees x 12.6 degrees, resulting in 3.0 dB coupling loss with cleaved single-mode optical fiber. (c) 2005 Elsevier B.V. All rights reserved.

Measurement of gain spectrum for semiconductor lasers utilizing integrations of product of emission spectrum and a phase function over one mode interval

A technique based on the integrations of the product of amplified spontaneous emission spectrum and a phase function over one mode interval is proposed for measuring gain spectrum for Fabry-Perot semiconductor lasers, and a gain correction factor related to the response function of the optical spectrum analyzer (OSA) is obtained for improving the accuracy of measured gain spectrum. The gain spectra with a difference less than 1.3 cm(-1) from 1500 to 1600 nm are obtained for a 250-mum-long semiconductor laser at the OSA resolution of 0.06, 0.1, 0.2, and 0.5 nm. The corresponding gain correction factor is about 9 cm(-1) at the resolution of 0.5 nm. The gain spectrum measured at the resolution of 0.5 nm has the same accuracy as that obtained by the Hakki-Paoli method at the resolution of 0.06 nm for the laser with the mode interval of 1.3 nm.

High epitaxial growth rate of 4H-SiC using TCS as silicon precursor

High homoepitaxial growth of 4H-SiC has been performed in a home-made horizontal hot wall CVD reactor on n-type 4H-SiC 8 degrees off-oriented substrates in the size of 10 mm x 10 mm, using trichlorosilane (TCS) as silicon precursor source together with ethylene as carbon precursor source. Cross-section Scanning Electron Microscopy (SEM), Raman scattering spectroscopy and Atomic Force Microscopy (AFM) were used to determine the growth rate, structural property and surface morphology, respectively. The growth rate reached to 23 mu m/h and the optimal epilayer was obtained at 1600 degrees C with TCS flow rate of 12 seem in C/Si of 0.42, which has a good surface morphology with a low Rms of 0.64 nm in 10 mu mx10 mu m area.

Electroabsorption modulated semiconductor optical amplifier monolithically integrated with spot-size converters

We have demonstrated an electroabsorption modulator (EAM) and semiconductor optical amplifier (SOA) monolithically integrated with novel dual-waveguide spot-size converters (SSCs) at the input and output ports for low-loss coupling to planar light-guide circuit silica waveguide or cleaved single-mode optical fiber. The device is fabricated by means of selective-area MOVPE growth (SAG), quantum well intermixing (QWI) and asymmetric twin waveguide (ATG) technologies with only three steps low-pressure MOVPE growth. For the device structure, in SOA/EAM section, double ridge structure was employed to reduce the EAM capacitances and enable high bit-rate operation. In the SSC sections, buried ridge stripe (BRS) were incorporated. Such a combination of ridge, ATG and BRS structure is reported for the first time in which it can take advantage of both easy processing of ridge structure and the excellent mode characteristic of BRS. At the wavelength range of 1550-1600 nm, lossless operation with extinction ratios of 25 dB DC and more than 10 GHz 3-dB bandwidth is successfully achieved. The beam divergence angles of the input and output ports of the device are as small as 8.0 degrees x 12.6 degrees, resulting in 3.0 dB coupling loss with cleaved single-mode optical fiber. (c) 2005 Elsevier B.V. All rights reserved.

聚丁二烯红外和拉曼光谱微结构分析

本工作对聚丁二烯(PBD)进行了光谱微结构分析，主要考察了三个问题。1、PBD分子链构象对PBD红外光谱的影响本工作对高顺式(c)PBD样品进行了室温和低温(25℃和-150℃)红外光谱测定，发现高顺式PBD在低温下整个光谱吸收峰大部分峰宽变窄，峰强增加，特别是738cm~(-1)峰，在低温下位移至748cm~(-1)，峰强增加一倍多。另外还观察到低温结晶态出现802和598cm~(-1)两个吸收峰，在以前文献中未曾有过报导，我们将它们归属为顺式结构结晶峰。通过计算分峰，原来738cm~(-1)峰分成两个位于742和727cm~(-1)的子峰，在低温下，两个子峰分别位移至748和735cm~(-1)，与室温时比较，两个子峰半宽都明显变小。748cm~(-1)子峰峰强也大大增加。结构分析表明，顺式结构特征振动CH=CH面外变角与分子链的构象有密切联系，而仅式(T)和1.2(v)结构却不存在这种情况，因而967cm~(-1)(T)和911cm~(-1)(v)两特征峰低温下变化都很小。本工作认为顺式结构738cm~(-1)峰这一变化是由于顺式结构不同分子链构象所造成的。低温和室温下分峰所得的左子峰对应于最稳定构象产生的吸收，右子峰则对应于相对不稳定构象产生的吸收。同时本工作肯定了米晋瑁等人提出的红外光谱定量分析方法在高顺式样品中的适用性。2、PBD分子链序列结构对红外光谱的影响由于在非高顺式样品中存在CCC、CCT、CCV、TCV、TCT、VCV等多种序列形式，通过不同组成的PBD红外光谱分析，发现在乙烯基含量中、高的样品中，原来738cm~(-1)峰已不再存在，峰值出现在733cm~(-1)附近，而且受1.2结构部分吸收的严重影响，顺式结构CH=CH面外变角吸收已不再是顺式结构的特征峰。通过对850至650cm~(-1)光谱区的光谱解析，本工作认为朱晋瑁等人的红外光谱定量分析方法在乙烯含量中、高的样品中已不再适用。3、PBD拉曼光谱的微结构分析本工作对PBD拉曼光谱1600-1700cm~(-1)区进行了光谱测定，选择了1666、1652和1639.5cm~(-1)吸收峰作为T、C和V构型的特征峰，借助于景遐斌老师的计算分峰方法，对PBD样品进行微结构分析，结果表明，各吸收带拟合良好，特征峰峰位稳定，分别在1666±1、1652±1.5和1639.5±1 cm~(-1)，半峰宽变化不大，峰与峰之间相互影响很小，也就是说，我们选用的特征峰是合理的。用分峰所得的相对面积，结合~1H-NMR测得的值，建立了拉曼光谱PBD定量分析方法。用这一方法对27个不同微结构组成的PBD样品进行分析，所得结果与~1HNMR（高顺式样品与~(13)C-NMR、IR）比较，绝大部分样品一致性很好，最大偏差小于2%。本工作认为，用1666、1652和1639.5cm~(-1)碳双键伸缩振动吸收峰作为T、C和V构型特征峰进行定量分析，在理论上是合理的，在实际上是可行的。而且本方法直接使用固体样品，不经任何溶解和处理，所有计算处理在微机上即可实现，操作和计算都很方便。

贾第虫的“双等核”及其保持等同机制的研究

贾第虫是一类寄生于肠道的单细胞原生动物，也被认为是目前已知的最原始的真核细胞。它的一个十分奇特和令人感兴趣的特点是：具有在形态和大小上都很相似的左右对称的两个细胞核。已有一些证据表明贾第虫的这样的两个核在其它一些方面也都很相似甚至完全相同，如两核的DNA含量相等，两核都含有rDNA和至少一套染色体，并且在DNA复制、转录和核分裂等功能活动方面也基本都是同步的。但是，这两个核在基因的组成方面是否完全一致，甚至两核之间的对应基因（等位基因）的序列是否完全相同呢？若是，贾第虫为什么需要这样两个完全“等价”的细胞核（“双等核”）？这两个核又是如何长期保持一致而不会因两个核内发生不同的基因变异而产生差异呢？此外，目前普遍认为贾第虫至少是四倍体，即每个核至少为二倍体。那么同一个核内的等位基因是否序列也一致？保持其一致的机制又是什么？这些问题不仅饶有趣味，而且对于揭示贾第虫特殊的遗传机制乃至真核细胞基因组倍性的起源进化等问题具有重要意义。 本文首先对其两个核内是否有相同的基因组成进行了检验。我们选择了三个执行不同功能蛋白的基因为代表以检验贾第虫的两个细胞核是否都含有这些基因。这三个基因分别是：DNA拓扑异构酶II基因（topII）, 核仁蛋白KRR1基因（krr1）和目前贾第虫中报道的极少数含有内含子的基因之一的铁硫蛋白基因（fes）。利用荧光原位杂交(FISH)技术在两个核中进行了定位分析。结果表明这几个代表性的基因在贾第虫的两个细胞核中都同时存在。这提示着贾第虫的两核中具有相同的基因组成，也表明贾第虫的这两个核可能在功能方面也是“等价”的。 其次，我们对其两个核中的等位基因是否具有一致的序列进行了检验，并对其两核之间以及同一核内的等位基因保持一致的机制进行了研究。选择前人文献报道的存在多态位点（即这些位点可能是易变位点）的两个基因：fen1和pdi为研究对象，在自己建立的一个贾第虫克隆培养系上进行单细胞PCR和测序的跟踪分析。跟踪分析了18个月（约分裂1600���）后，检测到如下结果：尽管在fen1基因上尚未发现位点变异的规律，但在pdi基因上发现存在几个位点会间歇出现套峰。据此我们推测套峰的出现可能是由于其中一个等位基因发生了突变，而后套峰消失则可能是突变被恢复。这种等位基因的修复机制很可能是基因转换（gene conversion）。进而我们在贾第虫基因组中找到了参与基因转换的很多酶基因的同源基因，RT-PCR的结果也表明这些基因在贾第虫中是活跃转录的。这进一步提示了贾第虫中发生基因转换的可能性。因此以上结果不仅表明贾第虫的两核之间和同一核内的等位基因的序列都是一致的，同时还说明基因转换可能是同一核内等位基因保持一致的机制。至于两个核之间保持等位基因序列一致的机制，我们采用了两种染核的方法对大量的贾第虫细胞进行了观察，以期能从中找到两核保持等同的证据。结果发现在大量细胞群体中存在一定比例的单核细胞和一侧含有两个核的细胞。据此我们推测：贾第虫可能通过发生一侧细胞核的丢失或萎缩，然后由另外一侧的核进行复制，经过核的重排恢复正常的左右核的状态。这可能就是贾第虫消除两核基因出现的差异，保持两核之间等位基因一致乃至两个核完全等同的机制。

Epitaxial growth on 4H-SiC by TCS as a silicon precursor

Epitaxial growth on n-type 4H-SiC 8°off-oriented substrates with a size of 10 × 10 mm~2 at different tem-peratures with various gas flow rates has been performed in a horizontal hot wall CVD reactor, using trichlorosilane (TCS) as a silicon precursor source together with ethylene as a carbon precursor source. The growth rate reached 23 μm/h and the optimal epilayer was obtained at 1600 ℃ with a TCS flow rate of 12 sccm in C/Si of 0.42, which has a good surface morphology with a low RMS of 0.64 nm in an area of 10 × 10μm~2. The homoepitaxial layer was oh-tained at 1500 ℃ with low growth rate (< 5μm/h) and the 3C-SiC epilayers were obtained at 1650 ℃ with a growth rate of 60-70μm/h. It is estimated that the structural properties of the epilayers have a relationship with the growth temperature and growth rate. Silicon droplets with different sizes are observed on the surface of the homoepitaxial layer in a low C/Si ratio of 0.32.

虎杖对植物病原真菌的杀菌活性及有效成分研究

植物源杀菌剂的开发应用以及从植物中寻找杀菌活性物质作为先导化合物，是目前杀菌研究领域的热点之一。本文以蓼科植物虎杖（Polygonum cuspidatum Sieb.et Zucc.) 为材料，研究了虎杖提取物的杀菌活性和作用机理，确定了虎杖中的有效杀菌活性成分，并以此为先导化合物进行了衍生物合成与结构活性关系的研究。 不同溶剂提取物制备与杀菌活性测定结果表明，乙醇适合作为虎杖植物杀菌剂的提取溶剂，提取率高，对多种植物病原真菌具有广谱的杀菌和抑菌活性，除对黄瓜白粉病（Sphaerotheca fuliginea）表现出很好的防治效果外，对苹果腐烂病菌（Valsa mali）、玉米小斑病菌（Helminthosporium maydis）、葡萄炭疽病菌（Colletotrichum gloeosporioides）、小麦赤霉病菌（Fusarium graminearum）、油菜菌核病菌（Sclerotinia sclerotiorum）、水稻纹枯病菌（Rhizoconia solani）等也具有很好的抑制作用。虎杖回流提取物对黄瓜白粉病的杀菌作用以保护作用为主，兼具一定的治疗作用，并且具有一定的内吸活性，持效期约为4-7 d。温室试验结果表明，虎杖乙醇回流提取物10%可溶性液剂对黄瓜白粉病的EC90值为172.83 mg/L，田间小区试验表明该制剂在800-1600 mg/L的浓度下，对黄瓜白粉病的防效达到76.3-93.4%，具有较好的应用前景。 对苹果腐烂病菌的抑菌作用机理表明，虎杖乙醇提取物对该病原菌有明显的抑制作用，能够抑制蛋白质、葡萄糖等菌体细胞内物质的合成，从而使病菌代谢速度减慢，抑制其生长。虎杖提取物还能够使几丁质酶和β-1,3葡聚糖酶这两种细胞壁相关水解酶的活性升高，降解细胞壁而破坏菌体结构，使菌体自溶。 过测定虎杖乙醇回流提取物对黄瓜体内等一些防御酶和病程相关蛋白活性的影响，表明在40 mg/L和400 mg/L浓度下，虎杖乙醇提取物能够使黄瓜叶片内的过氧化物酶（POD）、多酚氧化酶(PPO)、苯丙氨酸解氨酶(PAL)、几丁质酶等不同程度的升高，从而在一定程度上提高植物对病原真菌的抗病能力。 通过生物活性跟踪测定以及pH梯度提取法确定了虎杖中的主要杀菌活性成分为蒽醌类化合物大黄素（emodin）和大黄素甲醚（physcion），结构通过了HPLC-MS和1H NMR确认，并且通过HPLC确定了虎杖乙醇回流提取物中二者的含量分别为3.28%和1.11%。 以虎杖中的有效成份之一的大黄素为原料，通过羟基的甲基化反应合成了包括已知物大黄素甲醚在内的11个大黄素衍生物，其中5个化合物为首次报道，并进行了初步结构活性关系研究。结果表明通过对大黄素3-OH位置以短直链烷基取代，其衍生物对黄瓜白粉病的活性大大提高，其中以甲基取代的衍生物大黄素甲醚的活性为母体大黄素的16.7倍，而以取代苄基修饰的衍生物的活性没有明显提高。一些目标化合物的活性明显优于三唑酮。研究中还意外发现大黄素的甲基化衍生物三甲氧基大黄素在4000 mg/L时能够明显抑制甜菜夜蛾幼虫的取食与生长发育，而大黄素和大黄素甲醚则无此作用。