83 resultados para Focal Point


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A set of recursive formulas for diffractive optical plates design is described. The pure-phase plates simulated by this method homogeneously concentrate more than 96% of the incident laser energy in the desired focal-plane region. The intensity focal-plane profile fits a lath-order super-Gaussian function and has a nearly perfect flat top. Its fit to the required profile measured in the mean square error is 3.576 x 10(-3). (C) 1996 Optical Society of America

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A closed-form propagation equation of Hermite-cosh-Gaussian beams passing through an unapertured thin lens is derived. Focal shifts are analyzed by means of two different methods according to the facts that the axial intensity of some focused Hermite-cosh-Gaussian beams are null and that of some others are not null but the principal maximum intensity may be located on the axis or off the axis. Optimal focusing for the beams is studied, and the condition of optimal focusing ensuring the smallest beam width is also given. (c) 2005 Elsevier GmbH. All rights reserved.

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High-density optical data storage requires high-numerical-aperture (NA) lenses and short wavelengths, But, with increasing NA and decreasing wavelength, the depth of focus (DOF) decreases rapidly. We propose to use pure-phase superresolution apodizers to optimize the axial intensity distribution and extend the DOF of an optical pickup. With this kind of apodizer, the expected DOF can be 2-4.88 times greater than that of the original system, and the spot size will be smaller than that of the original system. (C) 2001 Optical Society of America.

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We propose the use of a phase-shifting apodizers to increase focal depth, and we study the axial and radial behavior of this kind of apodizer under the condition that the axial intensity distribution is optimized for high focal depth. (C) 2002 Optical Society of America.

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The axial intensity distribution and focal depth of an apoclized focusing optical system are theoretically investigated with two kinds of incident light fields: a uniform-intensity-distribution beam and a Gaussian beam. Both a low-numerical-aperture and a high-numerical-aperture optical system are considered. Numerical results show that the depth of focus can be adjusted by changing the geometrical parameters and transmissivity of the apodizer in the focusing optical system. When a Gaussian beam is employed as the incident beam, the waist width also affects the depth of focus. The tunable range of the focal depth is very considerable. (c) 2005 Society of Photo-Optical Instrumentation Engineers.

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The axial intensity distribution and focal depth of an apoclized focusing optical system are theoretically investigated with two kinds of incident light fields: a uniform-intensity-distribution beam and a Gaussian beam. Both a low-numerical-aperture and a high-numerical-aperture optical system are considered. Numerical results show that the depth of focus can be adjusted by changing the geometrical parameters and transmissivity of the apodizer in the focusing optical system. When a Gaussian beam is employed as the incident beam, the waist width also affects the depth of focus. The tunable range of the focal depth is very considerable. (c) 2005 Society of Photo-Optical Instrumentation Engineers.

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In this paper, the evolution of the gradient force pattern, focal shift, and focal switch induced by a three-portion pure phase-shifting apodizer is numerically investigated in detail. The results show that the proposed apodizer may induce tunable gradient force on the particles in the focal region, focal shift, and focal switch. By adjusting the geometrical parameters of the phase-shifting apodizer, multiple traps may occur with changeable distance between them, and the shape of the optical trap also evolves evidently. More interestingly, for certain geometrical parameters of the proposed apodizer, by changing the phase shift of inner annular portion, the considerable focal shift may occur with focal switch accompanying, which is discussed to show that this kind of apodizer may be a very promising method of transporting trapped particles. © 2005 Elsevier GmbH. All rights reserved.

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Beginning with a beam coherence polarization (BCP) matrix, we obtain an analytical intensity expression for radially polarized ultrashort pulsed laser beams that pass through an apertureless aplanatic lens. We also investigate the intensity distribution of radially polarized beams in the vicinity of the focus. The focal shift of these beams is studied in detail. The focal shift depends strongly on Z(F) that coincides with pi times the Fresnel number. (c) 2007 Optical Society of America.

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On the basis of diffraction integral and the expansion of the hard-aperture function into a finite series of complex Gaussian functions, an approximate expression for spatially fully coherent polychromatic hollow Gaussian beams passing through aperture lens is obtained. Detailed numerical results indicate that remarkable spectral changes always occurs near the points where the field amplitude has zero value. The effects of truncation parameter, Fresnel number and the beam order on spectral shifts and spectral switches are investigated numerically. (C) 2008 Elsevier B.V. All rights reserved.

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We report the self-formation of quasiperiodic void structure with the length of several hundred micrometers inside the CaF2 crystal. The quasiperiodical voids along the propagation direction of the laser beam were formed spontaneously after the irradiation of a single femtosecond laser beam which was focused at a fixed point inside the crystal sample. The length of the void array varied with the focal depth beneath the sample surface. The possible mechanism of the self-formed void structure was discussed. (c) 2007 American Institute of Physics.

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This paper reports the development of solar-blind aluminum gallium nitride (AlGaN) 128x128 UV Focal Plane Arrays (FPAs). The back-illuminated hybrid FPA architecture consists of an 128x128 back-illuminated AlGaN PIN detector array that is bump-mounted to a matching 128x128 silicon CMOS readout integrated circuit (ROIC) chip. The 128x128 p-i-n photodiode arrays with cuton and cutoff wavelengths of 233 and 258 nm, with a sharp reduction in response to UVB (280-320 nm) light. Several examples of solar-blind images are provided. This solar-blind band FPA has much better application prospect.

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A photonic crystal nanolaser consisting of only the shift of two lattice points was fabricated by HJ/Xe inductively coupled plasma etching. The room temperature lasing was observed by photopumping. The three-dimensional finite-difference time-domain calculation showed that the lasing mode has small modal volume close to (lambda/2n)(3).

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In this paper, we constructed a Iris recognition algorithm based on point covering of high-dimensional space and Multi-weighted neuron of point covering of high-dimensional space, and proposed a new method for iris recognition based on point covering theory of high-dimensional space. In this method, irises are trained as "cognition" one class by one class, and it doesn't influence the original recognition knowledge for samples of the new added class. The results of experiments show the rejection rate is 98.9%, the correct cognition rate and the error rate are 95.71% and 3.5% respectively. The experimental results demonstrate that the rejection rate of test samples excluded in the training samples class is very high. It proves the proposed method for iris recognition is effective.

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In this paper, an n-type Si1-xGex/Ge (x >= 0.85) quantum cascade (QC) structure utilizing a deep Ge quantum well for electrons at the Gamma point is proposed. Based on linear interpolation, a conduction band offset at the Gamma point in a Si1-xGex/Ge ( x >= 0.85) heterostructure is presented, which is suitable for designing a QC laser. This approach has the advantages of a large conduction band offset at the Gamma point, a low lattice mismatch between the Si1-xGex/Ge ( x >= 0.85) active layers and the Si1-yGey ( y > x) virtual substrate, a small electron effective mass in the Gamma band, simple conduction energy band structures and a simple phonon scattering mechanism in the Ge quantum well. The theory predicts that if high-energy electrons are continuously injected into the Gamma band, a quasi-equilibrium distribution of electrons between the Gamma and L bands can be reached and held, i.e., electrons with a certain density will be kept in the Gamma band. This result is supported by the intervalley scattering experiments. In n-type Si1-xGex/Ge ( x >= 0.85) QC structures, population inversion between the laser's upper and lower levels is demonstrated.