The effect of OH- groups on the spectroscopic properties of erbium-doped tellurite glasses

A series of five different concentration erbium-doped tellurite glasses with various hydroxl groups were prepared. Infrared spectra of glasses were measured. In order to estimate the exact content of OH- groups in samples, various absorption coefficients of the OH- vibration band were analyzed under the different oxygen bubbling times. The absorption spectra of the glasses were measured, and the Judd-Ofelt intensity parameters Omega(i) of samples with the different erbium ions concentration and OH- contents were calculated on the basis of the Judd-Ofelt theory. The peak stimulated emission cross-section of (I13/2 ->I15/2)-I-4-I-4 transition of the samples was finally calculated by using the McCumber theory. The fluorescence spectra of Er3+:I-4(13/2)->I-4(15/2) transition and the lifetime of Er3+:I-4(13/2) level of the samples were measured. The effects of OH- groups on the spectroscopic properties of Er3+ doped samples with the different concentrations were discussed. The results showed that the OH- groups had great influences on the Er3+ lifetime and the fluorescence peak intensity. The OH- group is a main influence factor of fluorescence quenching when the doping concentration of Er2O3 is smaller than 1.0 mol%, but higher after this concentration, the energy transfer of Er3+ ions turns into the main function of the fluorescence quenching. And basically, there is no influence on the other spectroscopic properties (FWHM, absorption spectra, peak stimulated emission cross section, etc.).

荧光俘获效应对掺铒氧化物玻璃光谱性质的影响

测试了不同掺杂浓度和样品厚度下掺铒磷酸盐和碲酸盐玻璃的吸收光谱、荧光光谱和荧光寿命，计算了Er^3＋离子在1．53μm处的吸收截面（σa）、发射截面（σe）、自发辐射跃迁概率（Arad）、辐射跃迁寿命（τrad）、以及辐射跃迁量子效率（η）等光谱参数．讨论了荧光俘获效应对掺铒磷酸盐和碲酸盐玻璃光谱性质及光谱参数的影响．结果表明即使在铒离子低掺杂浓度（0．1mol％Er2O3）下，荧光俘获效应也普遍存在于掺铒玻璃材料中，使得荧光寿命（τt）和荧光半高宽（FWHM）随样品的厚度和铒离子掺杂浓度增加而增大，导致

Effects of Yb concentration on the spectroscopic properties of Yb : Y3Al5O12

Yb:YAG single crystals with Yb doping concentration 5.4, 16.3, 27.1, 53.6, and 100 at.% were grown by the Czochralski process. The effects of Yb concentration on the absorption spectra (190-1 100nm), fluorescence spectra under 940nm and X-ray excitation were studied. The concentration quenching of fluorescence was observed when the Yb doping concentration reaches to as high as 27.1 at.% for Yb:YAG. Under 940 nm excitation, the influence of the self-absorption at 969 and 1029 nrn on the fluorescence spectra is not evident when the Yb doping concentration is as high as 27.1 at.%. However, it can greatly change the shape of fluorescence spectra of Yb:YAG when the Yb doping concentration reaches to above 53.6 at.%. (c) 2005 Elsevier B.V. All rights reserved.

A new Yb-doped oxyorthosilicate laser crystal: Yb : Gd2SiO5

A new Yb-doped oxyorthosilicate laser crystal, Yb:Gd2SiO5 (Yb:GSO), has been grown by the Czochralski (Cz) method. The crystal structure was determined by means of X-ray diffraction analysis. Room temperature absorption and fluorescence spectra of Yb3+ ions in GSO crystal were measured. Then. spectroscopic parameters of Yb:GSO were calculated and compared with those of another Yb-doped oxyorthosilicate crystal Yb:YSO. Results indicated that Yb:GSO crystal seemed to be a very promising laser gain media in generating ultra-pulses and tunable solid state laser applications. As expected, the output power of 2.72 W at 1089 nm was achieved in Yb:GSO crystal with absorbed power of only 4.22 W at 976 nm, corresponding to the slope efficiency of 71.2% through the preliminary laser experiment. (c) 2005 Elsevier Ltd. All rights reserved.

蓝宝石中子辐照色心的研究

研究了中子辐照对蓝宝石(α-Al2O3)单晶体缺陷形成及光学性能的影响，对采用提拉法与温度梯度法生长的蓝宝石晶体进行中子辐照，通过对比辐照前后的吸收及荧光光谱变化，发现辐照使得蓝宝石晶体内形成F、F^+和F2^+色心缺陷，但不同方法生长的晶体样品中色心浓度差异明显。其中提拉法样品的F心浓度要高于温度梯度法样品，而温度梯度法样品中F^+色心浓度要高于提拉法样品。分析表明，这与两种方法生长的晶体中杂质含量差异有关。通过研究辐照后晶体的热致发光谱发现提拉法与温度梯度法生长的蓝宝石晶体分别在145℃与150℃有明

Growth and its spectroscopic properties of Sm : YAP crystal

Sm3+-doped yttrium aluminum perovskite (YAP) single crystal was grown by Czochralski (CZ) method. The absorption and fluorescence spectra along the crystallographic axis b were measured at room temperature. Judd-Ofelt theory was used to calculate the intensity parameters (Omega(t)), the spontaneous emission probability, the branching ratio and the radiative lifetime of the state (4)G(5/2). The peak emission cross-sections were also estimated at 567, 607, and 648 nm wavelengths. (c) 2006 Elsevier B.V. All rights reserved.

Growth and spectral properties of Gd2SiO5 crystal codoped with Er and Yb

Gd2SiO5 (GSO) single crystal codoped with Yb3+ and Er3+ (Abbr. as Er:Yb:GSO) was successfully grown by the Czochralski (CZ) method for the first time and the spectral characteristics were investigated. The absorption and fluorescence spectra were measured. The emission lifetime of the I-4(13/2)-Er-level was measured to be 5.84ms and the emission cross-section at 1529nm was calculated to be 1.03 x 10(-20) cm(2). The results indicate that Er:Yb:GSO is a potential laser material at similar to 1. 55 mu m wavelength region. (c) 2006 Elsevier B.V. All rights reserved.

Growth and spectroscopic characteristics of Yb : GSO single crystal

For the first time, a high optical quality 10 at.% Yb3+-doped gadolinium oxyorthosilicate laser crystal Gd2SiO5 (GSO) was grown by the Czochralski (Cz) method. The segregation coefficient of Yb3+ was studied by the inductively coupled plasma atomic emission spectrometer (ICP-AES) method. The crystal structure has monoclinic symmetry with space group P2(1)/c; this was determined by means of an x-ray diffraction analysis. The absorption spectra, fluorescence spectra and fluorescence decay curves of Yb3+ ions in a GSO crystal at room temperature were also studied. Then, the spectroscopic parameters of Yb:GSO were calculated. The advantages of the Yb:GSO crystal include high crystal quality, quasi-four-level laser operating scheme, high absorption cross-sections and particularly broad emission bandwidth (similar to 72 nm). The results indicated that the Yb:GSO crystal seemed to be a very promising laser gain medium in diode-pumped femtosecond laser and tunable solid state laser applications when LD pumped at 940 and 980 nm.

铝酸镧单晶体中Ce^3＋的能级结构和荧光特性

采用提拉法成功生长了纯LaAlO3和掺铈的LaAlO3单晶体，测试了它们的远红外吸收谱，紫外吸收谱，荧光谱，根据吸收光谱确定了晶体中Ce^3+的能级结构，利用这一能级结构模型较好地解释了Ce：LaAlO3晶体的荧光光谱。

Comparison of spectroscopic parameters of 15 at% Yb : YAlO3 and 15 at% Yb : Y3Al5O12

Yb: YAlO3 (YAP) (15 at %) and Yb: Y3Al5O12 (YAG)(15 at %) have been grown using the Czochralski method. Their absorption and fluorescence spectra were measured at room temperature and important spectroscopic parameters were calculated. Through the comparison of spectroscopic parameters of Yb:YAP and Yb: YAG, all results indicate that 15 at % Yb:YAP crystal is a potential candidate used for compact, efficient thin chip lasers when the laser output wavelength is 1012 or 103 8 nm. (C) 2004 Elsevier B.V. All rights reserved.

Three-photon-excited upconversion luminescence of Ce3+: YAP crystal by femtosecond laser irradiation

Infrared to ultraviolet and visible upconversion luminescence was demonstrated in trivalent cerium doped YAlO3 crystal (Ce3+: YAP) under focused infrared femtosecond laser irradiation. The fluorescence spectra show that the upconverted luminescence comes from the 5d-4f transitions of trivalent cerium ions. The dependence of luminescence intensity of trivalent cerium on infrared pumping power reveals that the conversion of infrared radiation is dominated by three-photon excitation process. It is suggested that the simultaneous absorption of three infrared photons pumps the Ce3+ ion into upper 5d level, which quickly nonradiatively relax to lowest 5d level. Thereafter, the ions radiatively return to the ground states, leading to the characteristic emission of Ce3+. (c) 2005 Optical Society of America.

不同Yb掺杂量的Yb：Y3Al5O12晶体的光谱分析

采用提拉法生长了Yb^3＋掺杂量分别为5．4at％，16．3at％，27．1at％，53．6at％和100at％的Yb：Y3Al5O12晶体．系统地表征和分析了Yb^3＋掺杂量对晶体吸收光谱和荧光光谱的影响．随着Yb^3＋掺杂量的增加，各峰值吸收系数呈线性增加的趋势．应用Smakula公式计算了各吸收峰对应的振荡强度，并分析了Yb^3＋掺杂量对振荡强度的影响．当Yb^3＋掺杂量增加到27．1at％时观察到了荧光猝灭现象；当Yb^3＋掺杂量增加到53．6at％时，荧光光谱的线形发生了很大的变化。

Yb：FAP晶体的生长及光谱性能

应用中频感应提拉法生长出不同掺杂浓度的Yb：FAP激光晶体，运用电感耦合等离子体原子发射光谱仪（ICP-AES）测定了Yb^3＋离子存Yb：FAP晶体中的分凝系数约为0．03。随着晶体的生长，晶体中Yb^3＋离子的轴向浓度逐渐增大。研究Yb：FAP晶体在77K和300K温度下的吸收光谱发现，振动谱的变化主要是由电子-声子近共振耦合作用引起的。系统地研究了不同Yb^3＋离子掺杂浓度Yb：FAP晶体的吸收光谱和荧光光谱。通过吸收光谱的测量计算了晶体的吸收截面。Yb：FAP晶体在904nm和982nm处存在Yb

Growth and spectroscopic characteristics of Yb : LPS single crystal

For the first time, a high optical quality Yb3+-doped lutetium pyrosilicate laser crystal Lu2Si2O7 (LPS) was grown by the Czochralski (Cz) method. The segregation coefficient of ytterbium ion in Yb:LPS crystal detected by the inductively coupled plasma atomic emission spectrometer (TCP-AES) method is equal to 0.847. X-ray powder diffraction result confirms the C2/m phase monoclinic space group of the grown crystal and the peaks corresponding to different phases were indexed. The absorption and fluorescence spectra, as well as fluorescence decay lifetime of Yb3+ ion in LPS have been investigated. The absorption and fluorescence cross-sections of the transitions F-2(7/2) <-> F-2(5/2) of Yb3+ ion in LPS crystal have been determined. The advantages of the Yb:LPS crystal including high crystal quality, quasi-four-level laser operating scheme, high absorption cross-sections (1.33 x 10(-2) cm(2)) and particularly broad emission bandwidth (similar to 62 nm) indicated that the Yb:LPS crystal seemed to be a promising candidate used as compact, efficient thin chip lasers when LD is pumped at 940 and 980 nm due to its low-symmetry monoclinic structure and single crystallographic site. (c) 2007 Elsevier B.V. All rights reserved.

Single crystal beta-Ga2O3: Cr grown by floating zone technique and its optical properties

beta-Ga2O3: Cr single crystals were grown by floating zone technique. Absorption spectra and fluorescence spectra were measured at room temperature. The values of field splitting parameter Dq and Racah parameter B were obtained by the peak values of absorption spectra. The value 10Dq/B=23.14 manifests that in beta-Ga2O3 crystals Cr3+ ions are influenced by low energy crystal field. After high temperature annealing in air, the Cr3+ intrinsic emission was enhanced and the green luminescence disappeared. The strong and broad 691 nm emission was obtained at 420 nm excitation due to the electron transition occurred from T-4(2) to (4)A(2). The studies manifest that the beta-Ga2O3 crystals have the potential application for tunable laser.