Spin-polarized transport through an Aharonov-Bohm interferometer with Rashba spin-orbit interaction

We study electron transport through an Aharonov-Bohm (AB) interferometer with a noninteracting quantum dot in each of its arms. Both a magnetic flux phi threading through the AB ring and the Rashba spin-orbit (SO) interaction inside the two dots are taken into account. Due to the existence of the SO interaction, the electrons flowing through different arms of the AB ring will acquire a spin-dependent phase factor in the tunnel-coupling strengths. This phase factor, as well as the influence of the magnetic flux, will induce various interesting interference phenomena. We show that the conductance and the local density of states can become spin polarized by tuning the magnetic flux and the Rashba interaction strength. Under certain circumstances, a pure spin-up or spin-down conductance can be obtained when a spin-unpolarized current is injected from the external leads. Therefore, the electron spin can be manipulated by adjusting the Rashba spin-orbit strength and the structure parameters. (c) 2006 American Institute of Physics.

Tunable spin transport in magnetic-electric superlattice

We study the spin-dependent electron transport in a special magnetic-electric superlattice periodically modulated by parallel ferromagnetic metal stripes and Schottky normal-metal stripes. The results show that, the spin-polarized current can be well controllable by modulating the magnetic strength of the ferromagnetic stripes or the voltage applied to the Schottky normal-metal stripes. It is obvious that, to the system of the magnetic superlattice, the polarized current can be enhanced by the magnetic strength of ferromagnetic stripes. Nevertheless, it is found that, for the magnetic-electric superlattice, the polarized current can also be remarkably advanced by the voltage applied to the Schottky normal-metal stripes. These results may indicate a useable approach for tunable spintronic devices. (c) 2006 Elsevier B.V. All rights reserved.

Room-temperature observation of electron resonant tunneling through InAs/AlAs quantum dots

Molecular beam epitaxy is employed to manufacture self-assembled InAs/AlAs quantum-dot resonant tunneling diodes. The resonant tunneling current is superimposed on the thermal current, and together they make up the total electron transport in devices. Steps in current-voltage characteristics and peaks in capacitance-voltage characteristics are explained as electron resonant tunneling via quantum dots at 77 or 300 K, and thus resonant tunneling is observed at room temperature in III-V quantum-dot materials. Hysteresis loops in the curves are attributed to hot electron injection/emission process of quantum dots, which indicates the concomitant charging/discharging effect. (c) 2006 The Electrochemical Society.

Partially coherent tunneling through a series of barriers: Inelastic scattering versus pure dephasing

Within the Buttiker dephasing model, the backscattering in the dephasing process is eliminated by setting a proper boundary condition. Explicit expression is carried out for the effective total tunneling probability in the presence of multiple pure dephasing scatterers with partial coherence. The derived formula is illustrated analytically by various limiting cases, and numerically for its application in tunneling through multibarrier systems.

Real-time counting of single electron tunneling through a T-shaped double quantum dot system

Real-time detection of single electron tunneling through a T-shaped double quantum dot is simulated, based on a Monte Carlo scheme. The double dot is embedded in a dissipative environment and the presence of electrons on the double dot is detected with a nearby quantum point contact. We demonstrate directly the bunching behavior in electron transport, which leads eventually to a super-Poissonian noise. Particularly, in the context of full counting statistics, we investigate the essential difference between the dephasing mechanisms induced by the quantum point contact detection and the coupling to the external phonon bath. A number of intriguing noise features associated with various transport mechanisms are revealed.

DISTRIBUTION FUNCTION OF A DRIFTING ELECTRON-GAS FOR GENERAL ENERGY-BAND STRUCTURES

The usual application of the Lei-Ting balance equation method for treating electron transport problems makes use of a Fermi distribution function for the electron motion relative to the center of mass. It is pointed out that this presumes the existence of a moving frame of reference that is dynamically equivalent to the rest frame of reference, and this is only true for electrons with a constant effective mass. The method is thus inapplicable to problems where electrons governed by a general energy-band dispersion E(k) are important (such as in miniband conduction). It is demonstrated that this difficulty can be overcome by introducing a distribution function for a drifting electron gas by maximizing the entropy subject to a prescribed average drift velocity. The distribution function reduces directly to the usual Fermi distribution for electron motion relative to the center of mass in the special case of E(k)=($) over bar h(2)\k\(2)/2m*. This maximum entropy treatment of a drifting electron gas provides a physically more direct as well as a more general basis for the application of the balance equation method.

Suppression of ballistic electron transmission through a semiconductor II-structure by an external transverse electric field

We have conducted numerical studies of ballistic electron transport in a semiconductor II-structure when an external transverse electric field is applied. The device conductance as a function of electron energy and the strength of the transverse electric field is calculated on the basis of tight-binding Green's function formalism. The calculations show that a relatively weak electric field can induce very large decrease in the electron transmission across the structure. When the transverse electric field is sufficiently strong, electrons can hardly be transported through the device. Thus the performance of the device can be greatly improved for it is much easier to control electron transport through the device with an external transverse electric field.

New carbazole-based copolymers as amorphous hole-transporting materials for multilayer light-emitting diodes

New carbazole-based copolymers, which contain various concentrations of 9-alkyl-3, 6-carbazole fragments in the main chain connected via alkylene spacers, have been synthesized by Ni(0)-catalyzed Yamamoto-type aryl-aryl coupling reactions. Full characterization of the copolymer structure by NMR spectroscopy and elemental analysis is presented. These compounds represent amorphous materials of high thermal stability with glass transition temperatures of 151-162 degrees C and thermal decomposition starting at temperatures > 390 degrees C. UV-Vis absorption and photoluminescence emission of the copolymers confirmed that the effectively conjugated segment in the 3,6-linked carbazole-type copolymers is limited to dyads (dimeric units). However, copolymers with varying concentrations of the oligocarbazole chromophores demonstrate different charge injection and transport properties in multilayer light-emitting diodes with the copolymers as the hole transport and Alq(3) as the electroluminescent/electron transport layer. The device based on a copolymer composed of oligocarbazole blocks with an average length of around four carbazoles exhibited the best overall performance with a turn-on voltage of 3.5 V, a maximal photometric efficiency of 4.1 cd center dot A(-1) and maximum brightness of about 4 200 cd center dot m(-2).

Improvement of amplified spontaneous emission performance by doping tris(8-hydroxyquinoline) aluminum (Alq3) in dye-doped polymer thin films

A well-known red fluorescent dye 4-(dicy-anomethylene)-2-t-butyl-6(1,1,7,7-tetramethyljulolidyl-9-enyl)4H-pyran (DCJTB) was codoped with an electron transport organic molecule tris(8-hydroxyquinohne) aluminum (Alq3) in a host matrix of polystyrene (PS), and the amplified spontaneous emission (ASE) was studied by optically pumping. It was found that the ASE performance was significantly improved by the introduction of Alq3. The Alq3:DCJTB:PS blending thin films showed a low threshold (2.4 mu J/pulse) and a high net gain coefficient (109.95 cm(-1)) compared with the pure DCJTB:PS system (threshold of 15.2 mu J/pulse and gain of 35.94 cm(-1)). The improvement of the ASE performance was considered to be attributable to the effective Foster energy transfer from Alq(3) to DCJTB. Our results demonstrate that the Alq(3):DCJTB could be a promising candidate as gain medium for red organic diode lasers.

Improved electron injection in organic light-emitting devices with a lithium acetylacetonate [Li(acac)]/aluminium bilayer cathode

Lithium acetylacetonate [Li(acac)] covered with aluminium was used as an efficient electron injection layer in organic light-emitting devices (OLEDs) consisting of NPB as the hole transport layer and Alq(3) as the electron transport and light emitting layer, resulting in lower turn- on voltage and increased current efficiency. The turn- on voltage (the voltage at a luminance of 1 cd m(-2)) was decreased from 5.5 V for the LiF/Al and 4.4 V for Ca/Al to 4.0 V for Li(acac)/Al, and the device current efficiency was enhanced from 4.71 and 5.2 to 7.0 cd A(-1). The performance tolerance to the layer thickness of Li(acac) is also better than that of the device with LiF. LiF can only be used when deposited as an ultra- thin layer because of its highly insulating nature, while the Li(acac) can be as thick as 5 nm without significantly affecting the EL performance. We suppose that the free lithium released from Li(acac) improves the electron injection when Li(acac) is covered with an Al cathode.

Structural and magnetic properties of Sr2Fe1−xGaxMoO6 (0≤x≤0.25)

We have investigated the structure, magnetization and magnetoresistance (MR) of the double perovskite compounds Sr2Fe1−xGaxMoO6 (0≤x≤0.25). Rietveld refinement results show that the anti-site defects (ASDs) concentration increases with x, giving rise to highly disordered samples at the B/B positions, for the highest doping levels. The evolution of bond lengths and ions oxidation states could be understood by the distribution of trivalent Ga ions at the B/B positions, which leads to the formation of more disorder structure. The saturation magnetization and Curie temperature decreased with the Ga content increases in the samples, and their origin was found that the cations disorder for the Ga-doped compounds is annihilating double exchange mechanism due to the presence of significant amounts of Fe and Ga cations on the B site. The low-field magnetoresistance of Sr2FeMoO6 (SFMO) can be greatly enhanced by replacing the Fe by the nonmagnetic Ga ion up to a temperature of 300 K,since Ga ions may act as a barrier for electron transport along the chain in the ferromagnetic segregation and weaken the ferromagnetic exchange.

Charge transport in a blue-emitting alternating block copolymer with a small spacer to conjugated segment length ratio

We analyze current versus voltage data obtained using single carrier injection in several metal/polymer/metal sandwich structures. The polymer used in each case is a soluble blue-emitting alternating block copolymer. Our experimental results demonstrate that the electron transport is space-charge limited by the high density of traps having an exponential energy distribution (temperature dependent characteristic energy) in the copolymer. The electron mobility of 8x10(-10) cm(2)/V s is directly determined using space-charge-limited current analytical expressions. Hole transport is also space-charge limited, with a mobility of 2x10(-6) cm(2)/V s. A hole trap with energy 0.17 eV is observed. We compare these results with those obtained for related block copolymers with different spacer and conjugated segment lengths and discuss the influence of spacer length and conjugated segment length on the charge transport properties. (C) 2000 American Institute of Physics. [S0021-8979(00)04501-1].

A mechanistic model of algal photoinhibition induced by photodamage to Photosystem-II

Photoinhibition is a central problem for the understanding of plasticity in photosynthesis vs. irradiance response. It effectively reduces the photosynthetic rate. In this contribution, we present a mechanistic model of algal photoinhibition induced by photodamage to photosystem-II. Photosystem-IIs (PSIIs) are assumed to exist in three states: open, closed and inhibited. Photosynthesis is closely associated with the transitions between the three states. The present model is defined by four parameters: effective cross section of PSII, number of PSIIs, turnover time of electron transfer chains and the ratio of rate constant of damage to that of repair of D1 proteins in PSIIs. It gives a photosynthetic response curve of phytoplankton to irradiance (PI-curve). Without photoinhibition, the PI-curve is in hyperbola with the first three parameters. The PI-curve with photoinhibition can be simplified to the same form as the hyperbola by replacing either the number of PSIIs with the number of functional PSIIs or the turnover time of electron transfer chains with the average turnover time.

Anomalous behaviour of photorefractive grating erasure owing to existence of both negative and positive carriers

In LiNbO3:Fe, anomalous behaviour of grating erasure is observed with different wavelenghts, i.e. rapid grating erasure in the short wavelength range, which deviates from the results predicted by the electron transport band model. The deviation is related to the coexistance of electrons and holes in photorefraction, and charge-transfer process including electrons and hole has been proposed. The electron and hole contributions to photo-excitation coefficient S of the Fe centre on the wavelength.

高温和衰老对光合膜结构与功能影响的研究

本部分研究以菠菜和水稻为材料，比较系统的研究了高温对类囊体膜、PSII颗粒、PSII外周捕光天线LHCII、PSII核心复合物和PSII反应中心等不同层次膜蛋白结构与功能的影响，以探讨高温对光合膜蛋白的伤害机理。其主要结果如下： 1．类囊体膜结构与功能的完整性对于维持PSII的结构与功能在高温胁迫下的稳定性具有重要作用。当类囊体膜的完整性受到破坏，当与PSI有关的一系列保护机制失去作用时，PSII对高温胁迫的敏感性会大大加强。 2．虽然PSI的功能在高温下保持相对稳定，但PSI的结构在高温胁迫下并不稳定。本文的研究发现LHCI对高温非常敏感，在中度高温胁迫下就开始降解，但PSI的核心在高温下比较稳定，所以PSI介导的电子传递活性仍然维持在较高水平。 3．高温胁迫会对PSII的结构和功能产生多重破坏。这个过程首先应该是放氧复合体的失活：其次是反应中心的可逆失活;接下来可能是核心天线CP43和CP47的失活导致捕光天线同反应中心的能量传递受阻;再下来是QA到QR电子传递的受阻、反应中心的不可逆失活、捕光效率下降等过程;最后是大范围色素蛋白的变性和失活，PSII的结构和功能遭到彻底破坏。 4．高湿胁迫下Fo显著升高，Fo的升高的原因可能源于少量捕光天线同反应中心的分离和反应中心的失活。 5．高等植物体的类囊体膜中存在多种Chla和Chlb的光谱吸收形式。这些代表不同的光谱吸收形式的组分在高温胁迫下表现出不同程度的降解，其中C678 和C684组分降解最快。这些不同的光谱吸收形式组分可能以不同的比例存在于每一种色素蛋白复合物中。 6．LHCII的结构与功能对于维持PSII结构与功能的热稳定性具有重要作用，LHCII完全缺失的水稻突变体VG28及分离纯化的PSII核心复介物都人大增强了对高温的敏感性。但一种LHCII减少的水稻突变体249-Mutant,反而增加了PSII的热稳定性，进一步的研究表明，类囊体膜中 LHCII本身含量的多少对PSII热稳定性的影响不足决定性的，关键性因素可能主要取决于 LHCII含量改变而引起的膜脂组成和膜脂不饱和程度的改变，以及由膜脂变化引起的PSII放氧复合体结构与功能的变化。 7．本研究首次发现，高温可以促使分离纯化的LHCII的红区吸收光谱发生显著红移，而680nm处的荧光发射降低，长波长荧光组分大大增强。绿胶电泳表明中度高温胁迫能够诱导LHCII产生寡聚体，这种寡聚体可能在调节能量耗散方面具有重要生理意义：而严重高温胁迫下LHCII倾向于聚合产生大分子的非活性聚集体。 8．分离纯化的反应中心对高温非常敏感，各种色素的结构和功能在轻度高温胁迫下就开始受到破坏和抑制，各种色素变性和降解的顺序由快到慢是：P680>Pheo>Chla>β-Car。反应中心的多肽组分在高温胁迫下显著减少，Dl和D2减少的原因可能归因于高温胁迫导致大分子聚合物的产生，D2的减少显著快于D1的减少。