75 resultados para Electrochemical energy storage
Resumo:
The effect of La/Ce ratio on the structure and electrochemical characteristics of the La0.7-xCexMg0.3Ni2.8Co0.5 (x = 0.1, 0.2, 0.3, 0.4, 0.5) alloys has been studied systematically. The result of the Rietveld analyses shows that, except for small amount of impurity phases including LaNi and LaNi2, all these alloys mainly consist of two phases: the La(La, Mg)(2)Ni-9 phase with the rhombohedral PuNi3-type structure and the LaNi5 phase with the hexagonal CaCU5-type structure. The abundance of the La(La, Mg)(2)Ni-9 phase decreases with increasing cerium content whereas the LaNi5 phase increases with increasing Ce content, moreover, both the a and cell volumes of the two phases decrease with the increase of Ce content. The maximum discharge capacity decreases from 367.5 mAh g(-1) (x = 0.1) to 68.3 mAh g(-1) (x = 0.5) but the cycling life gradually improve. As the discharge current density is 1200 mA g(-1), the HRD increases from 55.4% (x = 0.1) to 67.5% (x = 0.3) and then decreases to 52.1% (x = 0.5). The cell volume reduction with increasing x is detrimental to hydrogen diffusion D and accordingly decreases the low temperature dischargeability of the La0.7-xCexMg0.3Ni2.8Co0.5 (x = 0.1-0.5) alloy electrodes.
Resumo:
The crystal structure, hydrogen storage property and electrochemical characteristics of the La0.7Mg0.3Ni3.5-x(Al0.5Mo0.5), (x=0-0.8) alloys have been investigated systematically. It can be found that with X-ray powder diffraction and Rietveld analysis the alloys are of multiphase alloy and consisted of impurity LaNi phase and two main crystallographic phases, namely the La(La, Mg)(2)Ni-9 phase and the LaNi5 phase, and the lattice parameter and the cell volume of both the La(La, Mg)(2)Ni-9 phase and the LaNi5 phase increases with increasing A] and Mo content in the alloys. The P-C isotherms curves indicate that the hydrogen storage capacity of the alloy first increases and then decreases with increasing x, and the equilibrium pressure decreases with increasing x. The electrochemical measurements show that the maximum discharge capacity first increases from 354.2 (v = 0) to 397.6 mAh g(-1) (x = 0.6) and then decreases to 370.4 mAh g(-1) (x= 0.8). The high-rate dischargeability of the alloy electrode increases lineally from 55.7% (x=0) to 73.8% (x=0.8) at the discharge current density of 1200 mA g(-1). Moreover, the exchange current density of the alloy electrodes also increases monotonously with increasing x.
Resumo:
The microstructure and electrochemical performance of Ti0.17Zr0.08V0.34Pd0.01Cr0.1Ni0.3 electrode alloy have been investigated using X-ray diffraction, field emission scanning electron microscopy-energy dispersive spectroscopy, inductively coupled plasma and electrochemical impedance spectroscopy. The alloy electrode has a higher discharge capacity than an AB(5) type alloy within a wider temperature span. The increase of the charge-transfer-resistances, and the dissolutions of V and Zr were responsible for the performance degradation of the alloy electrode.
Resumo:
The electrochemical properties of the Ti0.17Zr0.08V0.35Cr0.10Ni0.30 alloy electrode were investigated. This alloy has good cycle life at 303 K, 313 K, and even at 323 K, but the discharge capacity decreases gradually at 333 K with increasing cycle number. Both the charge-discharge efficiency and the charge-discharge voltage reduce. The electrochemical impendence spectra indicate that the charge-transfer resistance decreases while the exchange current density increases as temperature increases. The apparent activation energy of the charge-transfer reaction is about 50 kJ mol(-1), which is higher than that on the AB(5) type alloy electrode.
Resumo:
Electrochemical properties of rare earth AB(3)-type hydrogen storage alloys as negative electrode material and a polymer instead of 6 M KOH aqueous solution as solid state electrolyte in MH-Ni battery have been investigated at room temperature and 28degreesC first time. The partial replacement of Ni by Al and Mn elements increases the specific capacity and cycle stability of the alloy.
Resumo:
Heavily iron-implanted silicon was prepared by mass-analyzed low-energy dual ion beam deposition technique. Auger electron spectroscopy depth profiles indicate that iron ions are shallowly implanted into the single-crystal silicon substrate and formed 35 nm thick FexSi films. X-ray diffraction measurements show that as-implanted sample is amorphous and the structure of crystal is partially restored after as-implanted sample was annealed at 400degreesC. There are no new phases formed. Carrier concentration depth profile of annealed sample was measured by Electrochemical C-V method and indicated that FexSi film shows n-type conductivity while silicon substrate is p-type. The p-n junction is formed between FexSi film and silicon substrate showing rectifying effect. (C) 2003 Elsevier B.V. All rights reserved.
Resumo:
Super-resolution filters based on a Gaussian beam are proposed to reduce the focusing spot in optical data storage systems. Both of amplitude filters and pure-phase filters are designed respectively to gain the desired intensity distributions. Their performances are analysed and compared with those based on plane wave in detail. The energy utilizations are presented. The simulation results show that our designed super-resolution filters are favourable for use in optical data storage systems in terms of performance and energy utilization.
Resumo:
The response of photonic memory effect in I-V characteristics of a specially designed photonic memory cell was reported. When the cell is biased in a storage mode, the optical excitation with the photon's energy larger than the energy gap gives rise to a step-like jump in the current. A set-up was used to measure the transient photocurrent at the biases where the step-like jump showed up. It is proved that the falling transient edge of the photocurrent, as the photoexcitation turns off, mainly maps the decaying of electrons and holes, which were previously stored in the cell during the illumination. Its time constant is a measure of photonic memory time.
Resumo:
Heavily iron-implanted silicon was prepared by mass-analyzed low-energy dual ion beam deposition technique. Auger electron spectroscopy depth profiles indicate that iron ions are shallowly implanted into the single-crystal silicon substrate and formed 35 nm thick FexSi films. X-ray diffraction measurements show that as-implanted sample is amorphous and the structure of crystal is partially restored after as-implanted sample was annealed at 400degreesC. There are no new phases formed. Carrier concentration depth profile of annealed sample was measured by Electrochemical C-V method and indicated that FexSi film shows n-type conductivity while silicon substrate is p-type. The p-n junction is formed between FexSi film and silicon substrate showing rectifying effect. (C) 2003 Elsevier B.V. All rights reserved.
Resumo:
We report some recent progress in constraining the symmetry energy E-sym(rho) at high densities using high-energy heavy-ion collisions. Circumstantial evidence of a soft E-sym(rho) at supra-saturation density is obtained by comparing the pion ratio pi(-)/pi(+) measured recently with FOPI at GSI and the IBUU04 model calculations. Detailed studies indicate that the power of determining the E-sym(rho)from pi(-)/pi(+) is enhanced with decreasing the beam energy to near the pion production threshold, showing a correlation to the increasing nuclear stopping. Among several heavy-ion reaction facilities in the world, the cooling storage ring (HIRFL-CSR), newly commissioned at Lanzhou, delivering heavy-ion beams up to 1 A GeV, to be coupled with advanced detectors will contribute significantly to further studies of the equation of state of asymmetric nuclear matter.
Resumo:
Ti-based icosahedral quasicrystalline phase (I-phase) exhibited excellent hydrogen storage property for special structure. Unfortunately, the application as the negative electrode material of the nickel-metal hydride batteries was limited due to the poor electrochemical kinetics. Meanwhile, rare-earth element was beneficial to the electrochemical properties of Ti, Zr-based alloy.
Resumo:
A templateless, surfactantless, electrochemical route is proposed to directly fabricate hierarchical spherical cupreous microstructures (HSCMs) on an indium tin oxide (ITO) substrate. The as-prepared HSCMs have been characterized by scanning electron microscopy (SEM), energy-dispersive X-ray (EDX) analysis, X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD).