Fermi-edge singularity observed in a modulation-doped AlGaN/GaN heterostructure

In this letter, we report on the observation of Fermi-edge singularity in a modulation-doped AlGaN/GaN heterostructure grown on a c-face sapphire substrate by NH3 source molecular beam epitaxy. The two-dimensional electron gas (2DEG) characteristic of the structure is manifested by variable temperature Hall effect measurements down to 7 K. Low-temperature photoluminescence (PL) spectra show a broad emission band originating from the recombination of the 2DEG and localized holes. The enhancement in PL intensity in the high-energy side approaching Fermi level was observed at temperatures below 20 K. At higher temperatures, the enhancement disappears because of the thermal broadening of the Fermi edge. (C) 1998 American Institute of Physics. [S0003-6951(98)02543-1].

Molecular-beam epitaxial growth of position controlled InAs islands on cleaved edge of InGaAs/GaAs superlattice

A promising approach for positioning of InAs islands on (110)GaAs is demonstrated. By combining self-assembly of quantum dots with solid source molecular beam epitaxy (MBE) on cleaved edge of InGaAs/GaAs superlattice (SL), linear alignment of InAs islands on the InGaAs strain layers have been fabricated The cleaved edge of InGaAs/GaAs SL acts as strain nanopattern for InAs selective growth. Indium atoms incident on the surface will preferentially migrate to InGaAs regions where favorable bonding sites are available. The strain nanopattern's effect is studied by the different indium fraction and thickness of InxGa1-xAs/GaAs SL. The ordering of the InAs islands is found to depend on the properties of the underlying InGaAs strain layers.

Franz-Keldysh effect and dynamical Franz-Keldysh effect of cylindrical quantum wires

We investigate the interband optical absorption spectra near the band edge of a cylindrical semiconductor quantum wire in the presence of a static electric field and a terahertz electric field polarized along the axis. Optical absorption spectra are nonperturbatively calculated by solving the low-density semiconductor Bloch equations in real space and real time. The influence of the Franz-Keldysh (FK) effect and dynamical FK effect on the absorption spectrum is investigated. To highlight the physics behind the FK effect and dynamical FK effect, the spatiotemporal dynamics of the polarization wave packet are also presented. Under a reasonable static electric field, substantial and tunable absorption oscillations appear above the band gap. A terahertz field, however, will cause the Autler-Townes splitting of the main exciton peak and the emergence of multiphoton replicas. The presented results suggest that semiconductor quantum wires have potential applications in electro-optical devices.

The Effect of MMT/Modified MMT on the Structure and Performance of the Superabsorbent Composite

A series of superabsorbent composites containing Montmorillonite (MMT), modified- Montmorillonite (OMMT) and sodium acrylate were synthesized by free-radical polymerization in aqueous solution. The structure of composites was characterized by Fourier transform infrared spectroscopy (FT-IR), transmission electron microscopy (TEM) and X-ray diffraction (XRD), and the results showed that the polymer chains were grafted onto the edge and the surface of MMT or OMMT. At the same time, the equilibrium swelling ratio of the composites was investigated as a function of the clay content and the results showed that the equilibrium swelling ratio of composites was improved by the introduction of clay.

Boundary effect of relief structure on crystallization of diblock copolymer in thin films

In this Letter, crystal growth of a symmetric crystalline-amorphous diblock copolymer, poly(styrene-b-epsilon-caprolactone) (PS-b-PCL), in thin films was investigated by atomic force microscopy (AFM), Relief structures of holes and islands were formed during annealing the film at the molten state, and the in situ observation of subsequent crystal growth at room temperature indicated that the crystals were preferred to occur at the edge of holes or islands and grew into the interior area. It was concluded that the stretched PCL blocks at the edge of relief structures, caused by material transportation or deformation of the interface, could act as nucleation agents during polymer crystallization. The crystal growth rate of individual lamellae varied both from lamellae to lamellae and in time, but the area occupied by crystals increased constantly with time. At 22 degreesC, the growth rate was 1.2 x 10(-2) mum(2)/min with the scan size 2 x 2 mum(2).