Double refraction and reflection of sequential crystal interfaces with arbitrary orientation of the optic axis and application to optimum design

The general formulation of double refraction or internal double reflection for any directions of incidence and arbitrary orientation of the optic axis in a uniaxial crystal is analysed in terms of Huygens' principle. Then double refraction and double reflection along the sequential interfaces in a crystal are discussed. On this basis, if the parameters of the interface are chosen appropriately, the range of angular separation between the ordinary ray and extraordinary ray can be much greater, It is useful for crystal element design. Finally, as an example, an optimum design of the Output end interface for a 2 x 2 electro-optic switch is given.

Electro-optic modulation of light propagating near the optic axis with any polarization in uniaxial crystals

The electro-optic effect in uniaxial crystals for light propagating near the optic axis with any polarization has been analyzed. The passive and the electrically induced birefringences and the rotation of polarization direction in crystals have been calculated, and the conoscopic interference figures under orthogonal polariscopes for different polarizer directions have been plotted. The extinction areas caused by the rotation of polarization direction in crystals change with the polarizer direction, but the two heads of the induced optical axes do not vary, which are always on the induced principal axis with bigger refractive index. The directions of polariscopes are always extinction, and the +/- 45 degrees directions with polarizer are always complete transmission. The conoscopic interference figures for LiNbO3 crystals have been demonstrated experimentally by rotating polariscopes directions, which accord with the theoretically calculating plots. (c) 2006 Elsevier GmbH. All rights reserved.

Formation and characterization of tin oxide aerogel derived from sol-gel process based on tetra(n-butoxy)tin(IV)

Transparent and translucent SnO2 aerogels with high specific surface area (>300m(2)/g) have been prepared by sol-gel process using tetra(n-butoxy)tin(IV) as a starting compound, and supercritical drying technique for solvent extraction. Light scattering measurements reveal that the polymeric cluster size distribution in sol system is gradually broadened during sol-gel transition. SEM images show that the aerogels are made up of the cottonlike oxide agglomerates with a large number of Pores. TEM images show that these aerogels seem to be self-similar at different magnifications. Their pore size distribution is pretty wide ranging, from mesopore to macropore especially for that of translucent aerogel. (C) 2004 Elsevier B.V. All rights reserved.

Near infrared broadband emission from bismuth-dysprosium codoped chalcohalide glasses

We investigate the broadband infrared emission of bismuth doped and bismuth/dysprosium codoped chalcohalide glasses. It is found that the bismuth/dysprosium codoping can drastically enhance the fluorescence as compared with either bismuth or dysprosium doped glasses. Meanwhile, the full width at half maximum of bismuth/dysprosium codoped glasses is over 170 nm, which is the largest value among all the reported rare-earth doped chalcohalide glasses. An ideal way for energy consumption between bismuth and dysprosium ions is supposed. Such improved gain spectra of both bismuth and dysprosium ions may have potential applications in developing broadband fibre amplifiers.

Effects of melting temperature on the broadband infrared luminescence of bi-doped and Bi/Dy co-doped chalcohalide glasses

Bismuth (Bi)-doped and Bi/Dy co-doped chalcohalide glasses are investigated as promising materials for amplifiers in optical communication. The samples synthesized at lower melting temperatures (MTs) are characterized by more intensified infrared emissions. With respect to the redox process of a liquid mixture at different MTs, we attribute an emission at 1230 nm to low-valent Bi ions. The lower MT favors the formation of LVB ions, i.e. Bi+ or Bi2+, while the higher MT promotes the production of higher-valent Bi ions Bi3+. An enhanced broadband infrared luminescence with the full-width at half-maximum over 200 nm is achieved from the present Bi/Dy co-doped chalcohalide glasses.

Broadband optical amplification near 1300 nm in bismuth-doped germanate glass

In this paper, we present the broadband optical amplification in bismuth-doped germanate glass, at the second telecommunication window when excited with 808 nm and 980 nm laser diodes, respectively. The amplification range is from 1272 nm to 1348 nm wavelength, which is within the O-band of silica fiber communication. This bismuth-doped glass can be used as ultra broadband amplification material for wavelength-division-multiplexing (WDM) at the second telecommunication window.

Ultrabroad infrared luminescence from Bi-doped aluminogermanate glasses

We report ultrabroad infrared luminescence from Bi-doped aluminogermanate glasses. The infrared luminescence almost covers the whole low loss wavelength region (1200-1650 nm) of silica glass fiber when excited by a diode laser at 980 nm. The full width at half maximum (FWHM) of the luminescence is 510 nm. The luminescence peak can be divided into three Gaussian peaks, and the fluorescence lifetime of the three emissions are 297 mu s, 470 mu s and 1725 mu s, respectively. These fluorescence properties indicate that the glasses are promising material for broadband optical amplifiers. (C) 2007 Elsevier Ltd. All rights reserved.

Fabrication and emission properties of Er3+/Yb3+ codoped tellurite glass fiber for broadband optical amplification

Tellurite glass is proposed as a host for broadband erbium-doped fiber amplifiers because of their excellent optical and chemical properties. A new single mode Er3+/Yb3+ codoped tellurite fiber with D-shape cladding geometry is fabricated in this work. When pumped at 980 nm, a broad erbium amplified spontaneous emission (ASE) nearly 100 nm in the wavelength range of 1450-1650 ran around 1.53 mu m is observed. It was found that the emission spectrum from erbium in tellurite glass fibers is almost twice as broad as the corresponding spectrum in tellurite bulk glass. The changes in ASE with regard to fiber lengths and pumping power were measured and discussed. The output of about 2.3 mW from Er3+/Yb3+ codoped tellurite fiber ASE source is obtained under the pump power of 700 mW. The broad 1.53 mu m emission of Er3+ in Er3+/Yb3+ codoped tellurite glass fiber can be used as host material for potential broadband optical amplifier and tunable fiber lasers. (c) 2005 Elsevier B.V. All rights reserved.

Encircled energy measurement for focusing lens based on scanning Hartmann test

The encircled energy of a focusing lens is one of the parameters directly affecting the target efficiency in high-power laser facilities. The direct measurement method of the encircled energy for the focusing lens based on the scanning Hartmann test is proposed in this paper. With the scanning Hartmann test setup, the information in the whole aperture of the focusing lens can be achieved. The encircled energy can be obtained by analyzing the spot diagram on the focal plane of the focusing lens. In experiments, the encircled energy of an aspheric focusing lens is measured using this method. The measurement result is in good agreement with that derived from measurement data by an interferometer and the difference is 7.7%. (C) 2006 Elsevier GmbH. All rights reserved.

Effects of sapphire substrate annealing on ZnO epitaxial films grown by MOCVD

The annealing effects of sapphire substrate on the quality of epitaxial ZnO films grown by metalorganic chemical vapor deposition (MOCVD) were studied. The atomic steps formed on (0 0 0 1) sapphire (alpha-Al2O3) substrate surface by annealing at high temperature was analyzed by atomic force microscopy (AFM). The annealing effects of sapphire substrate on the ZnO films were examined by X-ray diffraction (XRD), AFM and photoluminescence (PL) measurements. Experimental results indicate that the film quality is strongly affected by annealing treatment of the sapphire substrate surface., The optimum annealing temperature of sapphire substrates is given. (c) 2006 Elsevier B.V. All rights reserved.

Simultaneous three-photon-excited violet upconversion luminescence of Ce3+: Lu2Si2O7 single crystals by femtosecond laser irradiation

We found that Ce3+:Lu2Si2O7 single crystals could be excited at 800 nm by using a femtosecond Ti:sapphire laser. The emission spectra of Ce3+:Lu2Si2O7 crystals were the same for one-photon excitation at 267 nm as for excitation at 800 nm. The emission intensity of Ce3+: Lu2Si2O7 crystals was found to depend on the cube of the laser power at 800 nm, consistent with simultaneous absorption of three 800 nm photons. The measured value of the three-photon absorption cross section is sigma'(3) = 2.44 x 10(-77) cm(6) s(2). (c) 2006 Optical Society of America.

Effects of process on microstructure and properties of translucent Dy-alpha-SiAlON sintered at lower temperatures

Hot pressing (HP) at higher sintering temperature has been a traditional and prevalent technique for the fabrication of alpha-SiAlON. In order to prepare translucent SiAlON more easily, LiF was used as a non-oxide sintering additive to lower the sintering temperature to <= 1650 degrees C. As a result, all of the samples possessed a good hardness and fracture toughness. At the same time, the lower temperature sintered samples showed a higher optical transmittance in the range of 2.5-5.5 mu m wavelength (0.5 mm in thickness). The maximum infrared transmission reached 68% at a wavelength of 3.3 mu m. The present work shows that the sintering process has a strong effect on microstructure and property of alpha-SiAlON. To be exact, a lower sintering temperature and longer holding time can produce some fully-developed microstrcture, which is beneficial for the optical transmittance. (C) 2008 The Ceramic Society of Japan. All rights reserved.