Sensitivity improvement by UV-light recording in LiNbO3 : Ce : Cu crystals

Modulated UV light is used to increase the sensitivity of the two-centre holographic recording. Inherent mechanisms of nonvolatile holographic recording in oxidized and reduced crystals are numerically analysed based on solving the two-centre material equations modilied for UV-Iight recording. Experiments verification is performed with an oxidized crystal and a reduced crystal, and the role of UV intensity on the sensitivity is presented.

Improvement in refractive-index change in LiNbO3 : Ce : Cu by applying an external electric field

By jointly solving two-centre material equations with a nonzero external electric field and coupled-wave equations, we have numerically studied the dependence of the non-volatile holographic recording in LiNbO3:Ce:Cu crystals on the external electric field. The dominative photovoltaic effect of the non-volatile holographic recording in doubly doped LiNbO3 crystals is directly verified. And an external electric field that is applied in the positive direction along the c-axis (or a large one in the negative direction of the c-axis) in the recording phase and another one that is applied in the negative direction of the c-axis in the fixing phase are both proved to benefit strong photorefractive performances. Experimental verifications are given with a small electric field applied externally.

Refractive-index change and sensitivity improvement in holographic recording in LiNbO3:Ce:Cu crystals with green light

Nonvolatile holographic recording is performed with green light in LiNbO3:Ce:Cu crystals. The refractive-index change and the recording sensitivity are times better than those obtained by recording with red light, and higher optical fixing efficiency is obtained. Correspondingly, theoretical investigations are given.

Study of oscillatory behavior of recording process arising from electron-hole competition in strongly oxidized LiNbO3 : Ce : Cu

We have investigated ultraviolet (UV) photorefractive effect of lithium niobate doubly doped with Ce and Cu. It is found the diffraction efficiency shows oscillating behavior Under UV-1ight-recording. A model in which electrons and holes can be excited from impurity centers in the UV region is proposed to study the oscillatory behavior of the diffraction efficiency. Oil the basis of the material equations and the coupled-wave equations, we found that the oscillatory behavior is due to the oscillation of the relative spatial phase shift Phi. And the electron-hole competition may cause the oscillation of the relative spatial phase shift. A switch point from electron grating to hole grating is chosen to realize nonvolatile readout by a red light with high sensitivity (0.4 cm/J). (c) 2005 Elsevier GmbH. All rights reserved.

Optimal recording wavelength for nonvolatile photorefractive holograms in Ce : Cu : LiNbO

Three wavelengths of red, green and blue of recording beams are systemically tested for the UV-assistant recording and optical fixing of holograms in a strongly oxidized Ce:Cu:LiNbO3 crystal. Three different photorefractive phenomena are observed. It is shown that the green beams will optimally generate a critical strong nonvolatile hologram with quick sensitivity and the optimal switching technique could be jointly used to obtain a nearly 100% high diffraction. Theoretical verification is given, and a prescription on the doping densities and on the oxidation/reduction states of the material to match a defined recording wavelength for high diffraction is suggested.

Effects of annealing on the color, absorption spectra, and light yield of Ce : YAlO3 single crystal grown by the temperature gradient technique

YAlO3 single crystal doped with Ce3+ at concentration 1% was grown by the temperature gradient technique. The as-grown crystal was pink. After H-2 annealing or air annealing at 1400degreesC for 20 h, the crystal was turned into colorless. We concluded there were two kinds of color centers in the as-grown crystal. One is F+ center attributed to absorption band peaking at about 530 nm, the other is O- center attributed to absorption band peaking at about 390 nm. This color centers model can be applied in explaining the experiment phenomena including the color changes, the absorption spectra changes, and the light yield changes of Ce:YAP crystals before and after annealing. (C) 2004 American Institute of Physics.

大尺寸Ce：Lu1.6Y0.4SiO5闪烁晶体的生长和光谱特性

采用中频感应提拉法生长出尺寸为Ф60mm×110mm的Ce：Lu1.6Y0.4SiO5（LYSO）晶体,与LSO晶体相比,LYSO晶体的优势是提高了晶体质量、降低了熔点和原料成本等.在室温下测试了LYSO晶体的透过光谱、激发光谱和发射光谱,结果表明Y的加入使LSO晶体的吸收边向短波方向偏移.Ce^3＋的4f^1→5d^1跃迁吸收导致紫外区产生三个吸收带.发射光谱具有Ce^3＋典型的双峰特征,经Gaussian多峰值拟合,双峰395nm和418nm归属于Ce1发光中心,而435nm的发光峰与Ce2发光中心有

Luminescence studies of Ce : YAG using vacuum ultraviolet synchrotron radiation

Photoluminescence spectrum of Ce:YAG single crystal was studied employing vacuum ultraviolet (VUV) synchrotron radiation. Intrinsic absorption edge at about 52,000 cm(-1) was observed in the absorption spectrum. From the VUV excitation spectrum, the energy of the highest d-component of 53,191 cm(-1) (188 nm) for the Ce3+ ions in YAG was obtained at 300 K. The disappearance of the third 5d level at 37,735 cm(-1) (265 nm) in absorption and excitation spectra in our samples may be due to the impurity Fe3+ ions absorption. (C) 2006 Elsevier Ltd. All rights reserved.

铝酸镧单晶体中Ce^3＋的能级结构和荧光特性

采用提拉法成功生长了纯LaAlO3和掺铈的LaAlO3单晶体，测试了它们的远红外吸收谱，紫外吸收谱，荧光谱，根据吸收光谱确定了晶体中Ce^3+的能级结构，利用这一能级结构模型较好地解释了Ce：LaAlO3晶体的荧光光谱。

Effect of air annealing on the spectral properties of Ce : Y3Al5O12 single crystals grown by the temperature gradient technique

Five absorption hands, at 227, 300 340, 370 and 457nm, were observed in the optical absorption spectrum of Ce:Y3Al5O12 (Ce:YAG) crystals grown by the temperature gradient technique (TGT). The absorption bands at 227, 340, and 457 nm were identified Lis belonging to the Ce3+ -ion in the YAG crystal. A near UV optical emission band at 398nm was observed. with an excitation spectrum containing two bands, at 235 and 370nm. No fluorescence was detected under 300 nm excitation. The pair of absorption bands at 235 and 370 nm and the absorption band at 300 nm were attributed to the F- and F+-type color centers, respectively. The color centers model was also applied to explain the spectral changes in the Ce:YAG (TGT) crystal, including the reduction in the Ce 31 -ion absorption intensity, after annealing in an oxidizing atmosphere (air). (C) 2004 Elsevier B.V. All rights reserved.

Color centers and charge state change in Ce : YAG crystals grown by temperature gradient techniques

Color centers and impurity defects of Ce:YAG crystals grown in reduction atmosphere by temperature gradient techniques have been investigated by means of gamma irradiation and thermal treatments. Four absorption bands associated with color centers or impurity defects at 235, 255, 294 and 370 nm were observed in as-grown crystals. Changes in optical intensity of the 235 and 370 nm bands after gamma irradiation indicate that they are associated with F+-type color center. Charge state change processes of Fe3+ impurity and Ce3+ ions take place in the irradiation process. The variations of Ce3+ ions concentration clearly indicate that Ce4+ ions exist in Ce:YAG crystals and gamma irradiations could increase the concentration of Ce3+ ions. Annealing treatments and the changes in optical density suggest that a heterovalent impurity ion associated with the 294 nm band seems to be present in the crystals. (c) 2005 Elsevier B.V. All rights reserved.

Ce：Lu2Si2O7闪烁晶体的结构和光谱特性

采用中频感应提拉法生长出Ce：Lu：Si2O7(Ce：LPS)晶体．通过x射线粉末衍射分析，晶体结构属单斜晶系的C21m空间群·光学显微镜下可观测到晶体的(110)解理．在室温下测试了Ce：LPS晶体的吸收光谱、激发光谱和发射光谱。结果表明，Ce：LPS晶体的吸收峰只有两个，分别位于302和349nm，且与激发峰的位置一致，归因于Ce^3+的4f^1→5d^1跃迁的特征吸收所致．发射光谱具有Ce^3+典型的双峰特征，经Gaussian多峰值拟合，带状谱是由384和407nm两个发射峰叠加而成，且后者的强度

YAP：Ce闪烁晶体的光致激发荧光衰减常数测量

用波长为266nm的激光激发不同尺寸、不同掺Ce^3＋浓度的YAP：Ce闪烁晶体，测量其光致激光荧光衰减常数，测量结果表明：YAP：Ce闪烁晶体的光致荧光衰减常数约为18．2ns，且与实验晶体厚度及Ce^3＋掺杂浓度（0．1％～0．6％原子分数）无关。