Effects of cell-cycle arrest agents on cleavage and development of loach (Misgurnus anguillicaudatus) embryos

The aim of this study was to determine the lowest concentration of nocodazole and colchicine to arrest blastomere division during the cleavage stage of loach embryos and to assess the reversibility and toxicity of the treatments in the treated embryos. Eight-cell loach embryos were incubated for 4, 8, 12, or 16 h in 1/10x Holtfreter supplemented with either nocodazole, an inhibitor of tubulin polymerization, or colchicine, an inhibitor of tubulin assembly. Complete arrest of cell cycle was observed, at a colchicine concentration of 0.996 mM and at a nocodazole concentration of 0.275 muM, respectively (the lowest effective concentration). No major morphological alteration in chromatin was observed. Reversibility and toxicity of both agents were dose and exposure period dependent. For both agents, prolonging cleavage arrest for more than 4 h (at the effective concentrations) is detrimental to development of embryos. Nocodazole treatment was less cytotoxic, whereas the concentrations of colchicine which induce cleavage arrest were detrimental to development beyond the blastula stage. Toxic effects beyond the blastula stage could be minimized for both agents by reducing the period of treatment and concentration.

Thermally induced Fe atom transition from substitutional to interstitial sites in InP and its influence on material property

As-grown Fe-doped semi-insulating InP single crystal has been converted into n-type low-resistance material after high temperature annealing. Defects in the InP materials have been studied by conventional Hall effect measurement, thermally stimulated current spectroscopy, deep level transient spectroscopy and X-ray diffraction respectively. The results indicate that Fe atoms in the InP material change from the substitutional to the interstitial sites under thermal activation. Consequently, the InP material loses its deep compensation centers which results in the change in types of conduction. The mechanism and cause of the phenomena have been analyzed through comparison of the sites of Fe atom occupation and activation in doping, diffusion and ion implantation processes of InP.

Thermodynamic model of hydrogen-induced silicon surface layer cleavage

A thermodynamic model of hydrogen-induced silicon surface layer splitting with the help of a bonded silicon wafer is proposed in this article. Wafer splitting is the result of lateral growth of hydrogen blisters in the entire hydrogen-implanted region during annealing. The blister growth rate depends on the effective activation energies of both hydrogen complex dissociation and hydrogen diffusion. The hydrogen blister radius was studied as a function of annealing time, annealing temperature, and implantation dose. The critical radius was obtained according to the Griffith energy condition. The time required for wafer splitting at the cut temperature was calculated in accordance with the growth of hydrogen blisters. (C) 2001 American Institute of Physics.

Enhanced hydrogen desorption from Si sites during low-temperature Si1-xGex growth by disilane and solid-Ge molecular beam epitaxy

A phenomenological model is proposed to explain quantitatively the interesting compositional dependence on the Ge incorporation rate during low-temperature growth of Si1-xGex by disilane and solid-Ge molecular beam epitaxy, based on enhanced hydrogen desorption from Si sites due to the presence of Ge atoms. The hydrogen desorption rate constant for disilane on Si sites is fitted to an exponential function of Ge incorporation rate and a possible physical explanation is discussed. Simulated results are in excellent agreement with experimental data. (C) 1999 American Institute of Physics. [S0021-8979(99)02109-X].

The evolution of chemical components of aerosols at five monitoring sites of China during dust storms

IEECAS SKLLQG

Columnar aerosol optical properties at AERONET sites in central eastern Asia and aerosol transport to the tropical mid-Pacific

IEECAS SKLLQG