Fabrication of metallic air bridges using multiple-dose electron beam lithography

The techniques of fabricating metallic air bridges using different resists in a one-step electron beam lithography are presented. The exposure process employed a single-layer polymethyl methacrylate (PMMA) or photoresists with either different doses in the span and feet areas or with varying acceleration voltage of the electron beam. The process using photoresists with different doses has produced air bridges more stable than what the PMMA method using various acceleration voltages would achieve. Using this method, air bridges up to 12 mu m long have been fabricated. The length and height of these metallic air bridges vary with the photoresist thickness. (c) 2006 American Institute of Physics.

High-speed photodetector characterization using tunable laser by optical heterodyne technique - art. no. 60200A

An ultra-wide-band frequency response measurement system for optoelectronic devices has been established using the optical heterodyne method utilizing a tunable laser and a wavelenath-fixed distributed feedback laser. By controlling the laser diode cavity length, the beat frequency is swept from DC to hundreds GHz. An outstanding advantage is that this measurement system does not need any high-speed light modulation source and additional calibration. In this measurement, two types of different O/E receivers have been tested. and 3 dB bandwidths measured by this system were 14.4GHz and 40GHz, respectively. The comparisons between experimental data and that from manufacturer show that this method is accurate and easy to carry out.

High-output very small aperture laser and its near-field distribution properties - art. no. 60200L

A Very-Small-Aperture Laser with a 250 X 500 nm(2) aperture has been created on a 650nm edge emitting LD. The highest far-field output power is 1.9mW and the power per unit emission area is about 15 MW/mu m(2). The special fabrication process and high output power mechanism are demonstrated respectively. The near-field distribution properties are also analyzed theoretically and experimentally.

Electroabsorption-modulated DFB laser integrated with dual-waveguide spot-size converter - art. no. 60200N

A 1.55-mu m ridge DFB laser and electroabsorption modulator monolithically integrated with a buried-ridge-stripe dual-waveguide spot-size converter at the output port for low-loss coupling to a cleaved single-mode optical fiber was fabricated by means of selective area growth, quantum well intermixing and dual-core technologies. These devices exhibit threshold current of 28 mA, side mode suppression ratio of 38.0 dB, 3-dB modulation bandwidth of 12.0 GHz, modulator extinction ratios of 25.0 dB dc. The output beam divergence angles of the spot-size converter in the horizontal and vertical directions are as small as 8.0 degrees x 12.6 degrees, respectively, resulting in 3.2 dB coupling loss with a cleaved single-mode optical fiber.

Tandem electroabsorption modulators integrated with DFB laser by ultra-low-pressure selective-area-growth MOCVD for 10 GHz optical short pulse generation - art. no. 60200O

A novel device of tandem multiple quantum wells (MQWs) electroabsorption modulators (EAMs) monolithically integrated with DFB laser is fabricated by ultra-low-pressure (22 mbar) selective area guowth (SAG) MOCVD technique. Experimental results exhibit superior device characteristics with low threshold of 19 mX output light power of 4.5 mW and over 20 dB extinction ratio when coupled into a single mode Fiber. Moreover, over 10 GHz modulation bandwidth is developed with a driving voltage of 2 V. Using I this sinusoidal voltage driven integrated device, 10GHz repetition rate pulse with a width of 13.7 ps without any compression elements is obtained.

Wavelength-selectable DFB laser with wide gain bandwidth realized in nonidentical quantum well - art. no. 60200W

Width varied quantum wells show a more flat and wide gain spectrume (about 115nm) than that of identical miltiple quantum well. A new fabricating method was demonstrated in this paper to realize two different Bragg grating in an selectable DFB laser based on this material grown identical chip using traditional holographic exposure. A wavelength by MOVPE was presented. Two stable distinct single longitudinal mode of 1510nm and 1530nm with SMSR of 45 dB were realized.

Microwave packaging for 10 Gb/s EML modulators - art. no. 60201O

A novel microwave packaging technique for 10Gb/s electro-absorption modulator integrated with distributed feedback laser (EML) is presented. The packaging parasitics and intrinsic parasitics are both well considered, and the packaging circuit was synthetically designed to compensate for the intrinsic parasitic of the chip. A butterfly-packaged EMI module has been successfully developed to prove that. The small-signal modulation bandwidth of the butterfly-packaged module is about 10 GHz. Optical fiber transmission experiments have shown that the module can be used for 10Gb/s optical transmission system. After transmission through 40km,. the power penalty is less than 1 dBm at a bit-error-rate of 10-12.

Recent progresses of SOI-based photonic devices - art. no. 60201R

SOI (Silicon on Insulator) based photonic devices, including stimulated emission from Si diode, RCE (Resonant Cavity Enhanced) photodiode with quantum structure, MOS (Metal Oxide Semiconductor) optical modulator with high frequency, SOI optical matrix switch and wavelength tunable filter are reviewed in the paper. The emphasis will be played on our recent results of SOI-based thermo-optic waveguide matrix switch with low insertion loss and fast response. A folding re-arrangeable non-blocking 4x4 matrix switch with total internal reflection (TIR) mirrors and a first blocking 16 x 16 matrix were fabricated on SOI wafer. The extinction ratio and the crosstalk are better. The insertion loss and the polarization dependent loss (PDL) at 1.55 mu m increase slightly with longer device length and more bend and intersecting waveguides. The insertion losses are expected to decrease 2-3 dB when anti-reflection films are added in the ends of the devices. The rise and fall times of the devices are 2.1 mu s and 2.3 mu s, respectively.

Subtraction of S-parameters for adiabatic small-signal modulation characteristics of laser diode - art. no. 60201V

An extended subtraction method of scattering parameters for characterizing laser diode is introduced in this paper. The intrinsic small-signal response can be directly extracted from the measured transmission coefficients of laser diode by the method. However the chip temperature may change with the injection bias current due to thermal effects, which causes inaccurate intrinsic response by our method. Therefore, how to determine the chip temperature and keep the laser chip adiabatic is very critical when extracting the intrinsic response. To tackle these problems, the dependence of the lasing wavelength of the laser diode on the chip temperature is investigated, and an applicable measurement setup which keeps the chip temperature stable is presented. The scattering parameters of laser diode are measured on diabatic and adiabatic conditions, and the extracted intrinsic responses for both conditions are compared. It is found that the adiabatic intrinsic responses are evidently superior to those without thermal consideration. The analysis indicates that inclusion of thermal effects is necessary to acquire accurate intrinsic response.

Leakage current analysis in AlGaInP/GaInP multi-quantum well lasers by the electrical derivative method - art. no. 60202F

In AlGaInP/GaInP multi-quantum well (MQW) lasers, the electron leakage current is a much more serious problem than that in laser diodes with longer wavelength. To further improve the output performance, the leakage current should be analyzed. In this letter, the temperature dependence of electrical derivative characteristics in AlGaInP/GaInP multi-quantum well lasers was measured, and the potential barrier for electron leakage was obtained. With the help of secondary ion mass spectroscopy (SIMS) measurement, theoretical analysis of the potential barrier was presented and compared with the measurement result. The influence of p-cladding doping level and doping profile on the potential barrier was discussed, and this can be helpful in metalorganic chemical vapor deposition (MOCVD) growth.

Effect of volume ratio on thermocapillary flow in liquid bridges of high-Prandtl-number fluids

In present study, the transition of thermocapillary convection from the axisymmetric stationary flow to oscillatory flow in liquid bridges of 5cst silicon oil (aspect ratio 1.0 and 1.6) is investigated in microgravity conditions by the linear instability analysis. The corresponding marginal instability boundary is closely related to the gas/liquid configuration of the liquid bridge noted as volume ratio. With the increasing volume ratio, the marginal instability boundary consists of the increasing branch and the decreasing branch. A gap region exists between the branches where the critical Marangoni number of the corresponding axisymmetric stationary flow increases drastically. Particularly, a unique axisymmetric oscillatory flow (the critical azimuthal wave number is m=0) in the gap region is reported for the liquid bridge of aspect ratio 1.6. Moreover, the energy transfer between the basic state and the disturbance fields of the thermocapillary convection is analyzed at the corresponding critical Marangoni number, which reveals different major sources of the energy transfer for the development of the disturbances in regimes of the increasing branch, the gap region and the decreasing branch, respectively.

Syntheses, structures, and magnetic properties of two novel three-dimensional frameworks built from M4O4 cubanes and dicyanamide bridges

Two novel coordination polymers Ni-4(CH3O)(4)(CH3OH)(4)(dca)(4) (1) and Co-4(CH3O)(4)(CH3OH)(4)(dca)(4) (2) have been synthesized by solvethermal reaction. X-ray single-crystal analysis reveals that the two complexes are isostrutural and possess 3D frameworks that are built from the M4O4(M= Ni (1) and Co (2)) cubanelike building blocks linked by dicyanamide (dca) bridges. The temperature dependence of the magnetic susceptibility was measured and the DC experiment data were fitted using the Heisenberg spin Hamiltonian.

Liquid crystalline and light emitting polyacetylenes: Synthesis and properties of biphenyl-containing poly(1-alkynes) with different functional bridges and spacer lengths

Biphenyl- (Biph-) containing 1-alkynes (3 and 4) and their polymers (1 and 2) with varying bridge groups and spacer lengths were synthesized and the effects of the structural variation on their properties, especially their mesomorphism and photoluminescence behaviors, were studied. The acetylene monomers 3(3) [HCdropC(CH2)(3)O-Biph-OCO(CH2)(10)CH3] and 4(m) [HCdropC(CH2)(m)OCO-Biph-OCO(CH2)(10)-CH3, m = 3, 4] were prepared by sequential etherization and esterification reactions of 1-alkynes. While 3(3) exhibits enantiotropic crystal E and SmB mesophases, its structural cousin 4(3) displays only a monotropic SmB phase. Enantiotropic SmA and SmB mesophases are, however, developed when the spacer length is increased to 4. Polymerizations of the monomers are effected by Mo-, W-, Rh-, and Fe-based catalysts, with the WCl6-Ph4Sn catalyst giving the best results (isolation yield up to 85% and M-w up to 59000). The polymers were characterized by IR, UV, NMR, TGA, DSC, POM, XRD, and PL analyses. Compared to 1(3), 2(3) shows a red-shifted absorption, a higher T-i, and a better packed interdigitated bilayer SmA(d) structure, while the mesophase of 2(4) involves monolayer-packing arrangements of the mesogens. Upon photoexcitation, 1(3) emits almost no light but 2(m) gives a strong ultraviolet emission (lambda(max) similar to 350 nm), whose intensity increases with the spacer length.