119 resultados para Blend films


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The morphology of films of isotactic polypropylene poly (3-dodecylthiophene) and iPP/P3DDT blend formed in electrostatic fields has been investigated by using scanning electron microscope. The experiment results show that the micro-crystal morphology of polymer films was strongly dependent on electrostatic fields. It was found that the effect of the electrostatic field led to the formation of dendrite crystals aligned in the field direction, and some branches of P3DDT ruptured. However, the micro-crystals in these films grew into spherulites without electrostatic field,and have no crystal orientation.

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The micro-crystal morphology of the films of isotactic polypropylene (iPP), poly(3-dodecylthiophene) (P3DDT) and iPP/P3DDT blend grown in different electrostatic environments has been investigated by using scanning electron microscope. The experimental results show that the micro-crystal morphology of polymer films was strongly dependent on electrostatic field. It was found that the micro-crystal morphology of the films of iPP, P3DDT and iPP/P3DDT blend grown in the electrostatic field was in the form of dendrite crystals, in which main stems were aligned in the field direction, and some branches of P3DDT were ruptured. However, the micro-crystals of the films of iPP, P3DDT and iPP/P3DDT blend have no crystal orientation in the absence of electrostatic field. (C) 2001 Elsevier Science Ltd. All rights reserved.

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The energy transfer in a blend film of poly 3-(2-(5-chlorobenzotriazolo) ethyl) thiophene (PCSET) and polyvinylcarzole (PVK) was investigated. The UV-VIS and photoluminescence (PL) results suggest that the energy transfer from PVK to PCBET leads to the enhancement of PL emission of PCBET. The AFM and LMF results indicated that the domains of blend polymer film are of micro-meter size. (C) 2001 Elsevier Science B.V. All rights reserved.

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Morphologies of solution-cast films of iPP/aPP blends have been studied by means of electron microscopy and X-ray scattering techniques. Microscopic observation showed that solution-cast film of iPP consists of two kinds of structural regions, cross-hatched and lath-liked structures. The addition of small amount of aPP (less than or equal to 30%) into iPP did not change iPP's characteristic crystallization behavior. It is noticed that when the content of aPP in its blend was over 80%, iPP formed a very loosely woven-like network composed of very long lamellae with wide-angle lamellar branchings. The X-ray data showed that aPP did not cocrystallize with iPP.

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In order to further investigate nanoindentation data of film-substrate systems and to learn more about the mechanical properties of nanometer film-substrate systems, two kinds of films on different substrate systems have been tested with a systematic variation in film thickness and substrate characteristics. The two kinds of films are aluminum and tungsten, which have been sputtered on to glass and silicon substrates, respectively. Indentation experiments were performed with a Nano Indent XP II with indenter displacements typically about two times the nominal film thicknesses. The resulting data are analyzed in terms of load-displacement curves and various comparative parameters, such as hardness, Young's modulus, unloading stiffness and elastic recovery. Hardness and Young's modulus are investigated when the substrate effects are considered. The results show how the composite hardness and Young's modulus are different for different substrates, different films and different film thicknesses. An assumption of constant Young's modulus is used for the film-substrate system, in which the film and substrate have similar Young's moduli. Composite hardness obtained by the Joslin and Oliver method is compared with the directly measured hardness obtained by the Oliver and Pharr method.

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The growth of highly lattice-mismatched InAs0.3Sb0.7 films on (100) GaAs Substrates by magnetron Sputtering has been investigated and even epitaxial lnAs(0.3)Sb(0.7) films have been successfully obtained. A strong effect of the growth conditions on the film structure was observed, revealing that there was a growth mechanism transition from three-dimensional nucleation growth to epitaxial layer-by-layer growth mode when increasing the substrate temperature. A qualitative explanation for that transition was proposed and the critical conditions for the epitaxial layer-by-layer growth mode were also discussed.

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首次在涂敷PEI的玻璃表面上制备了癸酸及全氟癸酸的单分子层膜。研究了成膜机理及摩擦特性。结果表明。脱水剂DCCD促进了癸酸或全氟癸酸与PEI酞胺化的反应。导致两种羧酸在PEI表面产生了靠化学键(酞胺键)连接的稳定的单分子层膜,摩擦、磨损实验表明。单分子层有机膜的摩擦特性受膜的组成、表面能及有序性和堆积密度的重要影响。表面能越低,有序性和堆积密度越高。摩擦系数越低。与碳氢化合物相比。碳氟化合物形成的有序膜具有更高的强度和抗磨性能。

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Essential work of fracture (EWF) analysis is used to study the effect of the silica doping level on fracture toughness of polyimide/silica (PI/SiO2) hybrid films. By using double-edge-notched-tension (DENT) specimens with different ligament lengths, it seems that the introduction of silica additive can improve the specific essential work of fracture (w (e) ) of PI thin films, but the specific non-essential work of fracture (beta w (p) ) will decease significantly as the silica doping level increasing from 1 to 5 wt.%, and even lower than that of neat PI. The failure process of the fracture is investigated with online scanning electron microscope (SEM) observation and the parameters of non-essential work of fracture, beta and w (p) , are calculated based on finite element (FE) method.

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A new DC plasma torch in which are jet states and deposition parameters can be regulated over a wide range has been built. It showed advantages in producing stable plasma conditions at a small gas flow rate. Plasma jets with and without magnetically rotated arcs could be generated. With straight are jet deposition, diamond films could be formed at a rate of 39 mu m/h on Mo substrates of Phi 25 mm, and the conversion rate of carbon in CH4 to diamond was less than 3%. Under magnetically rotated conditions, diamond films could be deposited uniformly in a range of Phi 40 mm at 30 mu m/h, with a quite low total gas flow rate and high carbon conversion rate of over 11%. Mechanisms of rapid and uniform deposition of diamond films with low gas consumption and high carbon transition efficiency are discussed.

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The morphological stability of epitaxial thin elastic films on a substrate by van der Waals force is discussed. It is found that only van der Waals force with negative Hamaker constant (A < 0) tends to stabilize the film, and the lower bound for the Hamaker constant is also obtained for the stability of thin film. The critical value of the undulation wavelength is found to be a function of both film thickness and external stress. The charateristic time-scale for surface mass diffusion scales to the fourth power to the wavelength of the perturbation.

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Three analytical double-parameter criteria based on a bending model and a two-dimensional finite element analysis model are presented for the modeling of ductile thin film undergoing a nonlinear peeling process. The bending model is based on different governing parameters: (1) the interfacial fracture toughness and the separation strength, (2) the interfacial fracture toughness and the crack tip slope angle, and (3) the interfacial fracture toughness and the critical Mises effective strain of the delaminated thin film at the crack tip. Thin film nonlinear peeling under steady-state condition is solved with the different governing parameters. In addition, the peeling test problem is simulated by using the elastic-plastic finite element analysis model. A critical assessment of the three analytical bending models is made by comparison of the bending model solutions with the finite element analysis model solutions. Furthermore, through analyses and comparisons for solutions based on both the bending model and the finite element analysis model, some connections between the bending model and the finite element analysis model are developed. Moreover, in the present research, the effect of different selections for cohesive zone shape on the ductile film peeling solutions is discussed.

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We investigate the morphological stability of epitaxial thin elastic films on a substrate by the Casimir force between the film surface and a flat plate. Critical undulation wavelengths are derived for two different limit conditions. Consideration of the Casimir force in both limit cases decreases the critical wavelength of the surface perturbation.

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In this paper, the mechanical properties of PI/Si_O, nanocomposite hybrid films with different silica doping levels are experimentally studied at low temperature. Experimental results show that the coefficient of thermal expansion (CTE) of the PI/Si_O, nanocomposite hybrid films gradually reduces when the ambiance temperature is decreased. At the liquid nitrogen temperature (77 K), the CTE value is about five times less than that at room temperature (287 K). The measured CTEs of hybrid films greatly decrease when doped with inorganic silica, especially when the silica doping level is more than 1 wt.%. However, too high silica contents (more than 10 wt.%) can cause problem to disperse effectively and the specimens become quite opaque. Experimental results also show that the effects of the pre-applied stress levels can be neglected on the CTE testing. When the ambient temperature changes from 287 to 77 K, the measured average values of the films' ultimate tensile strength (UTS) and Young's modulus increase about 60 and 90%, respectively, while the breaking elongation decreases about 42%.

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Electrowetting (EW) is an effective way to manipulate small volume liquid in micro- and nano-devices, for it can improve its wettability. Since the late 1990s, electrowetting-on-dielectric (EWOD) has been used widely in bio-MEMS, lab-on-a-chip, etc. Polydimethlsiloxane (PDMS) is extensively utilized as base materials in the fabrication of biomedical micro- and nano-devices. The properties of thin PDMS films used as dielectric layer in EW are studied in this paper. The experimental results show that the thin PDMS films exhibit good properties in EWOD. As to PDMS films with different thicknesses, a threshold voltage and a hysteresis were observed in the EIWOD experiments.

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ZnO piezoelectric thin films were prepared on crystal substrate Si(111) by sol-gel technology, then characterized by scanning electron microscopy, X-ray diffraction and atomic force microscopy (AFM). The ZnO films characterized by X-ray diffraction are highly oriented in (002) direction with the growing of the film thickness. The morphologies, roughness and grain size of ZnO film investigated by AFM show that roughness and grain size of ZnO piezoelectric films decrease with the increase of the film thickness. The roughness dimension is 2.188-0.914 nm. The piezoelectric coefficient d(33) was investigated with a piezo-response force microscope (PFM). The results show that the piezoelectric coefficient increases with the increase of thickness and (002) orientation. When the force reference is close to surface roughness of the films, the piezoelectric coefficient measured is inaccurate and fluctuates in a large range, but when the force reference is big, the piezoelectric coefficient d(33) changes little and ultimately keeps constant at a low frequency.