Synthesis, luminescence, energy transfer and Langmuir-Blodgett films of amphiphilic complexes of rare earths with monooctadecyl phthalate

Three new amphiphilic rare earth complexes with only two organic long chains Ln (MOP)(2)Cl (MOP=monooctadecyl phthalate, Ln=Eu, Tb, Gd) were synthesized and characterized by elemental analysis. The complexes (Eu, Tb) showed good luminescence property with long fluorescence lifetime, whereas the intensity and lifetime of Tb complex are greater than those of Eu complex, By measuring the triplet energy levels of ligand based on energy transfer mechanism, above phenomena have been well explained. The Langmuir films of the complexes on the air/water interface were also studied and the results show that all of them have good film-forming property.

LIFETIME MEASUREMENTS OF SOME TMI ODD PARITY LEVELS

Eleven new lifetimes of odd parity excited energy levels in four configurations: 4f12 5d 6s 6p, 4f12 6S2 6p, 4f13 5d 6s and 4f13 6s 7s of atomic thulium have been mesured with atomic-beam laser spectrocopy. Two pulsed dye lasers are used for stepwise excitation and the time-resolved fluorescence decay was used to determine lifetime values. The accuracy of the measurements is about 10%.

Numerical Investigation on Laser Transformation Hardening with Different Temporal Pulse Shapes

A 3-D numerical model for pulsed laser transformation hardening (LTH) is developed using the finite element method. In this model, laser spatial and temporal intensity distribution, temperature-dependent thermophysical properties of material, and multi-phase transformations are considered. The influence of laser temporal pulse shape on connectivity of hardened zone, maximum surface temperature of material and hardening depth is numerically investigated at different pulse energy levels. Results indicate that these hardening parameters are strongly dependent on the temporal pulse shape. For the rectangular temporal pulse shape, the temperature field obtained from this model is in excellent agreement with analytical solution, and the predicted hardening depth is favorably compared with experimental one. It should be pointed out that appropriate temporal pulse shape should be selected according to pulse energy level in order to achieve desirable hardening quality under certain laser spatial intensity distribution.

Semi-gas kinetics model for performance modeling of flowing chemical oxygen-iodine lasers (COIL)

A semi-gas kinetics (SGK) model for performance analyses of flowing chemical oxygen-iodine laser (COIL) is presented. In this model, the oxygen-iodine reaction gas flow is treated as a continuous medium, and the effect of thermal motions of particles of different laser energy levels on the performances of the COIL is included and the velocity distribution function equations are solved by using the double-parameter perturbational method. For a premixed flow, effects of different chemical reaction systems, different gain saturation models and temperature, pressure, yield of excited oxygen, iodine concentration and frequency-shift on the performances of the COIL are computed, and the calculated output power agrees well with the experimental data. The results indicate that the power extraction of the SGK model considering 21 reactions is close to those when only the reversible pumping reaction is considered, while different gain saturation models and adjustable parameters greatly affect the output power, the optimal threshold gain range, and the length of power extraction.

在激波波面中氧分子的非平衡离解

对强激波作用下双原子分子振动与离解耦合的非平衡离解过程进行了理论计算.本工作的特点是将计算起点建立在分子基本参数上,采用主方程理论处理振动与离解的耦合,振动跃迁几率用SSH理论计算,在离解限附近考虑多量子数跃迁并计及原子复合的影响.对O2-Ar体系,计算给出了在正激波后O2分子振动能级分布、振动弛豫时间、离解孕育时间、离解产物浓度、离解速率系数等物理量随时间的演化.计算结果分别与Camac和Wray的实验相符.计算显示,在激波作用的后期,有准稳态的振动能级布居分布.计算结果显示,Park模型低估了非平衡离解速率系数,Hansen模型则高估了非平衡离解速率系数.

估算等离子体效应对类氢离子束缚态能级能量影响的新公式

在均匀电子气模型下，通过求解Dirac方程，计算了类氢离子束缚态能级能量与等离子体密度的关系，得到了能近似估算能级能量随等离子体密度变化的新拟合公式，该公式同样可以用以估算不同束缚态能级发生压致电离时的临界电子密度．通过与自洽场离子球模型计算结果的比较，作为一种简单和快捷的计算方法，均匀电子汽模型在近似计算束缚态能级能量及压致电离临界电子密度方面是自洽场离子球模型得很好近似方法．

Multiphoton-excited upconversion luminescence of Nd : YVO4

Fluorescence spectra of Nd: YVO4 under excitation of a continuous wave (CW) diode laser and a femtosecond laser at 800nm were investigated. It was found that Nd: YVO4 shows different upconversion and downconversion luminescencent behaviors when excited by the diode laser and the femtosecond laser. The dependence of the upconversion luminescence intensity on the pump power of the femtosecond laser was discussed. The populations of the upper energy levels for upconversion and downconversion luminescence were calculated based on the Bloch equations. The calculations agree well with the experimental results. (c) 2007 Optical Society of America.

Optical spectroscopy of Yb3Al5O12 single crystal

Yb3Al5O12 single crystal has been grown by Czochralski (CZ) method. The absorption spectrum was investigated at low temperature and the electronic energy levels for F-2(5/2) multiplet of Yb3+ in YbAG was proposed. The up-conversion emission of the crystal under 940 nm diode pumping and the X-ray excited luminescence (XEL) features of the crystal were also studied. (c) 2005 Elsevier B.V. All rights reserved.

铝酸镧单晶体中Ce^3＋的能级结构和荧光特性

采用提拉法成功生长了纯LaAlO3和掺铈的LaAlO3单晶体，测试了它们的远红外吸收谱，紫外吸收谱，荧光谱，根据吸收光谱确定了晶体中Ce^3+的能级结构，利用这一能级结构模型较好地解释了Ce：LaAlO3晶体的荧光光谱。

Anisotropic crystallographic properties, strain, and their effects on band structure of m -plane GaN on LiAlO2 (100)

The m-plane GaN films grown on LiAlO2(100) by metal-organic chemical vapor deposition exhibit anisotropic crystallographic properties. The Williamson-Hall plots point out they are due to the different tilts and lateral correlation lengths of mosaic blocks parallel and perpendicular to GaN[0001] in the growth plane. The symmetric and asymmetric reciprocal space maps reveal the strain of m-plane GaN to be biaxial in-plane compress epsilon(xx)=-0.79% and epsilon(zz)=-0.14% with an out-of-plane dilatation epsilon(yy)=0.38%. This anisotropic strain further separates the energy levels of top valence band at Gamma point. The energy splitting as 37 meV as well as in-plane polarization anisotropy for transitions are found by the polarized photoluminescence spectra at room temperature. (c) 2008 American Institute of Physics.

The formation and electronic structures of 3d transition-metal atoms doped in silicon nanowires

Using first-principles methods, we systematically study the mechanism of defect formation and electronic structures for 3d transition-metal impurities (V, Cr, Mn, Fe, and Co) doped in silicon nanowires. We find that the formation energies of 3d transition-metal impurities with electrons or holes at the defect levels always increase as the diameters of silicon nanowires decrease, which suggests that self-purification, i.e., the difficulty of doping in silicon nanowires, should be an intrinsic effect. The calculated results show that the defect formation energies of Mn and Fe impurities are lower than those of V, Cr, and Co impurities in silicon nanowires. It indicates that Mn and Fe can easily occupy substitutional site in the interior of silicon nanowires. Moreover, they have larger localized moments, which means that they are good candidates for Si-based dilute magnetic semiconductor nanowires. The doping of Mn and Fe atom in silicon nanowires introduces a pair of energy levels with t(2) symmetry. One of which is dominated by 3d electrons of Mn or Fe, and the other by neighboring dangling bonds of Si vacancies. In addition, a set of nonbonding states localized on the transition-metal atom with e symmetry is also introduced. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.3000445]

Electronic states of InAs/GaAs tyre-shape quantum ring

In the framework of the effective mass theory, this paper calculates the electron energy levels of an InAs/GaAs tyre-shape quantum ring (TSQR) by using the plane wave basis. The results show that the electron energy levels are sensitively dependent on the TSQR's section thickness d, and insensitively dependent on TSQR's section inner radius R-1 and TSQR's inner radius R-2. The model and results provide useful information for the design and fabrication of InAs/GaAs TSQRs.

Quantum-confined Stark effects in a single GaN quantum dot

Using analytical expressions for the polarization field in GaN quantum dot, and an approximation by separating the potential into a radial and an axial, we investigate theoretically the quantum-confined Stark effects. The electron and hole energy levels and optical transition energies are calculated in the presence of an electric field in different directions. The results show that the electron and hole energy levels and the optical transition energies can cause redshifts for the lateral electric field and blueshifts for the vertical field. The rotational direction of electric field can also change the energy shift.

Field emission enhancement by the quantum structure in an ultrathin multilayer planar cold cathode

Field electron emission (FE) from an ultrathin multilayer planar cold cathode (UMPC) including a quantum well structure has been both experimentally and theoretically investigated. We found that by tuning the energy levels of UMPC, the FE characteristic can be evidently improved, which is unexplained by conventional FE mechanism. FE emission mechanism, dependent on the quantum structure effect, which supplies a favorable location of electron emission and enhances tunneling ability, has been presented to expound the notable amelioration. An approximate formula, brought forward, can predict the quantum FE enhancement, in which the theoretical prediction is close to the experimental result. (C) 2008 American Institute of Physics.

Influence of V/III ratio on the structural and photoluminescence properties of In0.52AlAs/In0.53GaAs metamorphic high electron mobility transistor grown by molecular beam epitaxy

A series of metamorphic high electron mobility transistors (MMHEMTs) with different V/III flux ratios are grown on GaAs (001) substrates by molecular beam epitaxy (XIBE). The samples are analysed by using atomic force microscopy (AFM), Hall measurement, and low temperature photoluminescence (PL). The optimum V/III ratio in a range from 15 to 60 for the growth of MMHEMTs is found to be around 40. At this ratio, the root mean square (RMS) roughness of the material is only 2.02 nm; a room-temperature mobility and a sheet electron density are obtained to be 10610.0cm(2)/(V.s) and 3.26 x 10(12)cm(-2) respectively. These results are equivalent to those obtained for the same structure grown on InP substrate. There are two peaks in the PL spectrum of the structure, corresponding to two sub-energy levels of the In0.53Ga0.47 As quantum well. It is found that the photoluminescence intensities of the two peaks vary with the V/III ratio, for which the reasons are discussed.