MOCVD生长Al_(0.48)Gao_(0.52)N/Al_(0.54)Ga_(0.36)N多量子阱的结构和光学特性

采用金属有机物化学气相淀积(MOCVD)技术,在蓝宝石衬底上生长了Al_(0.48)Gao_(0.52)N/Al_(0.54)Ga_(0.36)N多量子阱(MQWs)结构.通过双晶X射线衍射(DCXRD)、原子力显微镜(AFM)和阴极荧光(CL)等测试技术,分别对样品的结构和光学特性进行了表征.在DCXRD图谱中,可以观察到明显的MQWs衍射卫星峰,通过拟和,MQWs结构中阱和垒的厚度分别为2.1和9.4 nm,Al组分分别为0.48和0.54.在AFM表面形貌图上,可以观察到清晰的台阶流,表明MQWs获得了二维生长;与此同时,MQWs结构存在一些裂缝,主要原因为AlGaNMQWs结构和下层GaN层间存在很大的应力.CL测试表明,AlGaN MQWs结构的发光波长为295 nm,处于深紫外波段,同时观察到处于蓝光、绿光波段的缺陷发光.

One-Dimensional InP-Based Photonic Crystal Quantum Cascade Laser Emitting at 5.36μm

An InP-based one-dimensional photonic crystal quantum cascade laser is realized. With photo lithography instead of electron beam lithography and using inductively coupled plasma etching, four-period air-semiconductor couples are defined as Bragg reflectors at one end of the resonator. The spectral measurement at 80K shows the quasi-continuous-wave operation with the wavelength of 5.36μm for a 22μm-wide and 2mm-long epilayer-up bonded device.

Pulse Compression by Filamentation in Argon with an Acoustic Optical Programmable Dispersive Filter for Predispersion Compensation

We have experimentally demonstrated pulses 0.4 mJ in duration smaller than 12 fs with an excellent spatial beam profile by self-guided propagation in argon. The original 52 fs pulses from the chirped pulsed amplification laser system are first precompressed to 32 fs by inserting an acoustic optical programmable dispersive filter instrument into the laser system for spectrum reshaping and dispersion compensation, and the pulse spectrum is subsequently broadened by filamentation in an argon cell. By using chirped mirrors for post-dispersion compensation, the pulses are successfully compressed to smaller than 12 fs.

Effects and numerical analysis of argon gas flow on the oxygen concentration in Czochralski silicon single crystal growth

Argon gas, as a protective environment and carrier of latent heat, has an important effect on the temperature distribution in crystals and melts. Numeric simulation is a potent tool for solving engineering problems. In this paper, the relationship between argon gas flow and oxygen concentration in silicon crystals was studied systematically. A flowing stream of argon gas is described by numeric simulation for the first time. Therefore, the results of experiments can be explained, and the optimum argon flow with the lowest oxygen concentration can be achieved. (C) 2002 Elsevier Science B.V. All rights reserved.

Modeling study to compare the flow and heat transfer characteristics of low-power hydrogen, nitrogen and argon arc-heated thrusters

A modelling study is performed to compare the plasma °ow and heat transfer char- acteristics of low-power arc-heated thrusters (arcjets) for three di®erent propellants: hydrogen, nitrogen and argon. The all-speed SIMPLE algorithm is employed to solve the governing equa- tions, which take into account the e®ects of compressibility, Lorentz force and Joule heating, as well as the temperature- and pressure-dependence of the gas properties. The temperature, veloc- ity and Mach number distributions calculated within the thruster nozzle obtained with di®erent propellant gases are compared for the same thruster structure, dimensions, inlet-gas stagnant pressure and arc currents. The temperature distributions in the solid region of the anode-nozzle wall are also given. It is found that the °ow and energy conversion processes in the thruster nozzle show many similar features for all three propellants. For example, the propellant is heated mainly in the near-cathode and constrictor region, with the highest plasma temperature appear- ing near the cathode tip; the °ow transition from the subsonic to supersonic regime occurs within the constrictor region; the highest axial velocity appears inside the nozzle; and most of the input propellant °ows towards the thruster exit through the cooler gas region near the anode-nozzle wall. However, since the properties of hydrogen, nitrogen and argon, especially their molecular weights, speci¯c enthalpies and thermal conductivities, are di®erent, there are appreciable di®er- ences in arcjet performance. For example, compared to the other two propellants, the hydrogen arcjet thruster shows a higher plasma temperature in the arc region, and higher axial velocity but lower temperature at the thruster exit. Correspondingly, the hydrogen arcjet thruster has the highest speci¯c impulse and arc voltage for the same inlet stagnant pressure and arc current. The predictions of the modelling are compared favourably with available experimental results.

Volt-ampere characteristics, nozzle temperature and thruster performances in a low power argon arcjet

Argon gas with simple atomic structure and favorite arcing stability at low input power was used as the propellant. The thruster with a regeneratively cooled nozzle were tested in a vacuum system capable of keeping the chamber pressure at about 10 Pa at a propellant feeding rate of 5 slm. Arc current, arc voltage, thrust, nozzle temperature and propellant feeding rate were measured in situ simultaneously. Effects of the working parameters such as the propellant feeding rate and arc current on the thruster performances, mainly the produced thrust, specific impulse and thrust efficiency, were examined. The variation of arc volt-ampere characteristics with running time and the effect of nozzle temperature on thruster property are discussed.

35MeV／u~(36)Ar+~(112,124)Sn反应中中等质量碎片关联函数的入射道依赖

测量了35MeV／u36Ar+112,124Sn反应中小角关联出射的中等质量碎片(IMF)约化速度关联函数．结果表明36Ar+124Sn反应系统中的约化速度关联函数在小约化速度处的反关联程度比36Ar+112Sn反应系统中的强,表现出明显的入射道依赖性．考察出射粒子对的单核子总动量时,发现这种差异主要来自于高动量粒子对的贡献．用三体弹道理论模型MENEKA分别计算了两个系统的IMF发射时标,在36Ar+112Sn反应系统中约为150fm／c,而在36Ar+124Sn反应系统中,约为120fm／c．同位旋相关的量子分子动力学计算表明,36Ar+124Sn系统中IMF的发射时间谱比36Ar+112Sn系统略有前移,相应地,其中心密度从最高点随时间的下降亦比36Ar+112Sn系统略快．

高电荷态离子~(207)Pb~(36+)与金属Nb表面作用产生的二次离子产额

本文报道了利用兰州重离子加速器国家实验室的ECR离子源引出的高电荷态离子207Pb36+入射到金属Nb表面产生的二次离子的实验测量结果.实验发现,二次离子产额Y随入射初动能Ek的增加有先增加后减小的关系,在初动能为576 keV时二次离子产额达到最大.通过对实验点做高斯拟合发现,曲线峰值对应的入射初动能为602 keV.分析表明,这是势能沉积作用与线性级联碰撞过程协同作用的结果.高电荷态离子本身携带的高势能沉积在靶表面引起势能溅射,促进了二次离子的发射;而主导二次离子溅射的过程是动能溅射,它与靶表面的动量沉积(核能损)过程密切相关.