56 resultados para 853
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在室温下用308 MeV的Xe离子和853 MeV的Pb离子辐照Ni/Si O2样品,用卢瑟福背散射和X射线衍射技术对样品进行了分析。通过分析Ni/SiO2样品中元素成分分布和结构随离子辐照剂量和电子能损的变化,探索了离子辐照在Ni/SiO2样品中引起的界面原子混合与结构相变现象。实验结果显示,Xe和Pb离子辐照均能引起明显的Ni原子向SiO2基体的扩散并导致界面附近Ni,Si和O原子的混合。实验观测到低剂量Xe离子辐照可产生NiSi2相,而高剂量Xe离子辐照则导致了Ni3Si和Ni O相的形成。根据热峰模型,Ni原子的扩散和新相的形成可能由沿离子入射路径强电子激发引起的瞬间热峰过程驱动。
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在微观多体Brueckner-Hartree-Fock理论框架内,实现了三体核力对核物质中单核子势的重排贡献的计算,研究了三体核力重排贡献对单核子平均势场的动量相关性和密度依赖性的影响.另外,还计算了核物质中核子的有效质量并着重讨论了三体核力重排效应的影响.结果表明:三体核力对单核子势的重排贡献具有排斥性,而且三体核力的重排效应随动量和密度的增加而迅速增强;在高密度和高动量区域这一排斥贡献具有很强的动量相关性并起到了减弱单核子势吸引性和增强单核子势动量相关性的重要作用,有助于澄清非相对论性BHF平均势场在高密度和高动量区域吸引性过强和动量相关性过弱的问题.
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利用同位旋相关的量子分子动力学模型研究了中能重离子碰撞中库仑作用对同位旋分馏过程的影响 .研究结果表明 ,在所研究的能区 ,无论是丰 (缺 )中子碰撞系统或者轻 (重 )反应系统 ,库仑作用都使同位旋分馏过程减弱 ,而这种影响主要来自于库仑作用对质子的排斥作用 ,使更多的质子发射 ,从而降低了气相中子 -质子比所导致
Resumo:
用 60 Me V/u18O离子轰击天然铀靶 ,通过多核子转移反应产生重丰中子同位素 2 3 7Th。使用改进的相对快的分离钍的放射化学流程 ,从大量铀和复杂反应产物混合物中分离钍 ,用高纯锗( HPGe)探测器联同多道分析器对化学分离的钍样品做离线 γ射线谱学研究 ,通过对 2 37Th子体 2 37Pa(半衰期 8.7min)的 853.7ke Vγ射线的生长 -衰变曲线的分析 ,确定 2 37Th的半衰期为 4 .69± 0 .60min。
Resumo:
Amorphous SiO2 (a-SiO2) thin films were thermally grown on single-crystalline silicon. These a-SiO2/Si samples were first implanted (C-doped) with 100-keV carbon ion at room temperature (RT) at a dose of 5.0 x 10(17) C-ions/cm(2) and were then irradiated at RT by using 853 MeV Pb ions at closes of 5.0 x 10(11), 1.0 x 10(12), 2.0 x 10(12) and 5.0 x 10(12) Pb-ions/cm(2), respectively. The microstructures and the photoluminescence (PL) properties of these samples induced by Pb ions were investigated using fluorescence spectroscopy and transmission electron microscopy. We found that high-energy Pb-ion irradiation could induce the formation of a new phase and a change in the PL property of C-doped a-SiO2/Si samples. The relationship between the observed phenomena and the ion irradiation parameters is briefly discussed.
Resumo:
Amorphous SiO2 thin films with about 400-500 nm in thickness were thermally grown on single crystalline silicon. These SiO2/Si samples were firstly implanted at room temperature (RT) with 100 keV carbon ions to 2.0 x 10(17),5.0 X 10(17) or 1.2 x 10(18) ions/cm(2), then irradiated at RT by 853 MeV Pb ions to 5.0 x 10(11), 1.0 X.10(12) 2.0 x 10(12) or 5.0 x 10(12) ions/cm(2), respectively. The variation of photoluminescence (PL) properties of these samples was analyzed at RT using a fluorescent spectroscopy. The obtained results showed that Pb-ion irradiations led to significant changes of the PL properties of the carbon ion implanted SiO2 films. For examples, 5.0 x 10(12) Pb-ions/cm(2) irradiation produced huge blue and green light-emitters in 2.0 x 10(17) C-ions/cm(2) implanted samples, which resulted in the appearance of two intense PL peaks at about 2.64 and 2.19 eV. For 5.0 x 10(17) carbon-ions/cm(2) implanted samples, 2.0 x 10(12) Pb-ions/cm(2) irradiation could induce the formation of a strong and wide violet band at about 2.90 eV, whereas 5.0 x 10(12) Pb-ionS/cm(2) irradiation could,create double peaks of light emissions at about 2.23 and 2.83 eV. There is no observable PL peak in the 1.2 x 10(18) carbon-ions/cm(2) implanted samples whether it was irradiated with Pb ions or not. All these results implied that special light emitters could be achieved by using proper ion implantation and irradiation conditions, and it will be very useful for the synthesis of new type Of SiO2-based light-emission materials.
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Within the framework of microscopic Brueckner-Hatree-Fock, the contribution of the three-body force (TBF) rearrangement to the. single nucleon potential is calculated. The TBF rearrangement effects on the momentum and the density dependence of the single nucleon potential are investigated. The influence of the TBF rearrangement on the effective mass of nucleon is also discussed. It is shown that the rearrangement contribution of TBF is repulsive and momentum-dependent. The TBF rearrangement effect and its momentum dependence increase rapidly as increasing density and momentum. At high densities and high momenta, the repulsive rearrangement contribution reduces strongly the attraction of the single nucleon potential and enhances considerably the momentum dependence of the single nucleon potential.
Resumo:
The axially deformed relativistic mean field theory with the force NLSH has been performed in the blocked BCS approximation to investigate the proper-ties and structure of N=Z nuclei from Z=20 to Z=48. Some ground state quantities such as binding energies, quadrupole deformations, one/two-nucleon separation energies, root-mean-squaxe (rms) radii of charge and neutron, and shell gaps have been calculated. The results suggest that large deformations can be found in medium-heavy nuclei with N=Z=38-42. The charge and neutron rms radii increase rapidly beyond the magic number N=Z=28 until Z=42 with increasing nucleon number, which is similar to isotope shift, yet beyond Z=42, they decrease dramatically as the structure changes greatly from Z=42 to Z=43. The evolution of shell gaps with proton number Z can be clearly observed. Besides the appearance of possible new shell closures, some conventional shell closures have been found to disappear in some region. In addition, we found that the Coulomb interaction is not strong enough to breakdown the shell structure of protons in the current region.
Resumo:
具有特殊结构的SiO2基材料与Si平面工艺具有好的兼容性,在光电技术中的发光二极管、固体显示屏等器件的研制方面有巨大的潜在应用价值。本论文以快重离子与物质相互作用的特点为依据,选择具有重要应用价值的SiO2基材料,研究快重离子辐照在SiO2基材料中引起的强电子激发效应,特别是辐照相变等现象,探索制备具有特殊功能的新型材料的方法,主要开展了如下研究: 1)在单晶Si衬底上通过高温湿法氧化一层SiO2薄膜,制备出SiO2/Si样品;在室温条件下,用能量为100 keV的碳离子注入样品,注入剂量分别为2.0×1017、5.0×1017和1.2×1018 ions/cm2,使样品SiO2薄膜中一定区域内C、Si和O原子达到适当的原子浓度配比;再用能量为308 MeV的Xe和853 MeV的Pb离子在室温下对注碳后的SiO2/Si样品进行辐照,Xe离子辐照是在兰州重离子加速器国家实验室的扇聚焦回旋加速器(HIRFL-SFC)的重离子辐照终端上完成,辐照剂量分别为1.0×1012、5.0×1012、1.0×1013、1.0×1014 Xe-ions/cm2,Pb离子辐照实验是在法国重离子激光交叉学科研究中心(CIRIL,Caen)的中能离子辐照终端(IRASME)完成的,辐照剂量分别为5.0×1011、1.0×1012、2.0×1012、5.0×1012 Pb-ions/cm2;最后用荧光光谱、红外吸收光谱、拉曼光谱和透射电子显微镜分析等技术对样品进行了表征。研究了样品发光与注碳剂量、辐照剂量和离子在薄膜中电子能损值的依赖关系,辐照引起SiO2薄膜中微结构改变与实验参数的依赖关系。发现快重离子辐照能显著改变注碳SiO2/Si样品的发光特性,如在5.0×1012 Pb-ions/cm2辐照的注碳2.0×1017 ions/cm2的样品中,探测到了很强的位于456、484和563nm的发光;在电镜照片中观察到了8H-SiC纳米晶及其他微结构的形成。基于实验结果,对薄膜发光特性与微结构改变之间的关系进行了初步探讨。 2)利用磁控溅射在单晶SiO2表面沉积Ni薄膜,制备了Ni/SiO2样品;在室温下用能量为308MeV的Xe和853MeV的Pb离子辐照Ni/SiO2样品,离子穿透Ni薄膜和Ni/SiO2界面,Xe、Pb离子辐照分别在HIRFL-SFC和法国CIRIL的IRASME辐照终端上完成,辐照剂量为1.0×1012、5.0×1012 Xe/cm2和5.0×1011Pb/cm2;用卢瑟福背散射技术和X射线衍射谱对样品进行了分析,研究了界面原子混合及相变效应与辐照剂量、电子能损值的依赖关系。发现快重离子辐照能引起Ni/SiO2样品界面处原子的混合,并导致界面形成NiSi2或Ni3Si新相,且原子扩散量随辐照剂量和电子能损值的增大而增大。 3)以热峰模型原理为基础,对实验观测到的快重离子辐照效应特别是电子能损效应的产生机理进行了探讨
Resumo:
土壤质量与土壤的生物学性质密切相关,种植制度对土壤生物学特性的影响研究对土壤质量管理具有重要的意义。以黑龙江853农场不同种植制度土壤为研究对象,探讨种植制度对土壤理化性质,过氧化氢酶、脱氢酶活性和动力学特征的影响。主要研究结果:农作物轮作有利于提高土壤全碳含量,而大豆连作和玉米-大豆轮作使土壤有效氮和全氮含量提高,大豆连作土壤pH显著低于其它作物连作及轮作处理,全磷含量显著高于其它处理;2种轮作体系均提高土壤过氧化氢酶活性和催化能力,且催化能力的提高源于酶的Km降低(即酶-底物亲合力提高);玉米-小麦-大豆轮作提高土壤脱氢酶活性及催化能力,其催化能力的提高由2个动力学参数的变化共同决定,禾本科作物连作土壤动力学参数与豆科作物种植(大豆连作及与禾本科轮作)具有显著差异。本文的研究表明,合理的轮作方式是提高土壤生物学活性的有效手段。
Resumo:
通过调节B5培养基中的组分,研究了金钩南瓜组培根在五种营养元素(P、Mg、Fe、Cu、B)四个浓度梯度(1/2 B5、B5、3/2 B52、B5)培养下化感作用的响应模式以及对黑籽和金钩南瓜两种受体幼苗生长的影响。结果表明:不同营养元素对受体植物幼苗生长的影响不一致,与元素含量显著相关,而且依赖于受体选择。五种营养元素在亏缺(1/2 B5)和正常(B5)条件下南瓜组培根过滤液对受体植物幼苗生长均表现为抑制作用;而适量增加营养元素的条件下(3/2 B5和2 B5),一般表现为促进作用,但2 B5含量下,B元素导致金钩南瓜的自毒作用,而Fe能引发金钩南瓜组培根过滤液对黑籽南瓜的抑制作用。因此理论上初步得出P和Mg元素可以降低南瓜根系的毒害作用,而Fe、Cu和B元素对南瓜根系的化感调控作用与品种选择有关,这对调控施肥、降低设施农业中葫芦科作物的连作障碍具有一定的参考意义。
Resumo:
作物种植会对农田生态系统产生一定的影响。大田试验条件下,在黑龙江省853农场岗地白浆土上连续6年种植玉米、大豆、小麦、水稻,研究了土壤理化性质以及土壤中与碳、氮、磷、硫元素转化相关的9种水解酶活性和动力学特性的响应;同时研究了不同作物种植对土壤脲酶、磷酸单酯酶、磷酸二酯酶、芳基硫酸酯酶及β-葡糖苷酶动力学特性的影响。结果表明,大豆连作土壤的有效氮、总碳、总氮、总磷和总硫含量都稍高;大豆处理土壤pH值略低,但其它三种作物种植下的土壤均呈微酸性,差异不显著。土壤水解酶动力学参数对种植作物的反应与表观活性的反应不一致。玉米连作土壤蛋白酶和磷酸单酯酶活性高于其它处理;小麦处理的磷酸二酯酶和芳基硫酸酯酶活性最高,水稻连作土壤蛋白酶、磷酸二酯酶和磷酸三酯酶活性最低。连年种植小麦处理的土壤脲酶、磷酸二酯酶以及芳基硫酸酯酶Vmax显著高于其它处理,小麦连作土壤β-葡萄糖苷酶、脲酶、磷酸二酯酶和芳基硫酸酯酶的Vmax/Km值显著高于其它处理,可以看出在此处理下土壤酶具有较强的催化潜势。