SOC dynamic power management using artificial neural network

Dynamic Power Management (DPM) is a technique to reduce power consumption of electronic system by selectively shutting down idle components. In this article we try to introduce back propagation network and radial basis network into the research of the system-level power management policies. We proposed two PM policies-Back propagation Power Management (BPPM) and Radial Basis Function Power Management (RBFPM) which are based on Artificial Neural Networks (ANN). Our experiments show that the two power management policies greatly lowered the system-level power consumption and have higher performance than traditional Power Management(PM) techniques-BPPM is 1.09-competitive and RBFPM is 1.08-competitive vs. 1.79, 1.45, 1.18-competitive separately for traditional timeout PM, adaptive predictive PM and stochastic PM.

Influence of crystal perfection on the reverse leakage current of the SiGe Si p-n heterojunction diodes

Double-crystal X-ray diffraction and I-V characterization have been carried out on the GSMBE grown SiGe/Si p-n heterojunction materials. Results show that the SiGe alloys crystalline quality and the misfit dislocations are critical influences on the reverse leakage current. The crystal perfection and/or the degree of metastability of the Sice alloys have been estimated in terms of the model proposed by Tsao with the experimental results. High-quality p-n heterojunction diodes can be obtained by optimizing the SiGe alloy structures, which limit the alloys in the metastable states. (C) 1999 Elsevier Science B.V. All rights reserved.

Metamorphosis of self-organized quantum dots into quantum wires

Spontaneous formation of InAs quantum wires in InAlAs on InP(001) via sequential chain-like coalescence of quantum dots along [1 (1) over bar 0] is realized. Theoretical calculations based on the energetics of interacting steps provide a qualitative explanation for the experimental results. Sequential coalescence of initially isolated dots reduces the total free energy strikingly. Thus the wire-like structure is energetically favorable. (C) 1998 Elsevier Science B.V.

黄土高原沟壑区通量数据空间代表性研究

利用FSAM(Flux Source Area Model)模型,对中国科学院长武黄土高原农业生态试验站2004—2005年冬小麦生育期内的通量数据空间代表性进行了研究。结果发现,在90%贡献率水平下,整个冬小麦各生育期内通量源区范围动态变化明显,通量贡献最大点在距离观测点7.7~36.2m范围内变化。在盛行风向上,通量源区离观测点最近点为3.3 m,最远点可达172.8 m;在侧风向上,通量源区在38.1~128.4 m范围内变化。不同观测高度的对比研究表明,观测高度从1.86 m增加到12.17 m,盛行风向上源区距观测点最远距离从172.8 m增加到1 555.2 m;在侧风向上则从123.2 m增加到665.8 m,通量源区范围随高度的增加而增大。大气稳定度对通量贡献源区影响很大,在大气稳定状态下,通量源区面积最大,距观测点最远距离达到135.3 m;中性条件下次之,为101.7 m;在不稳定条件下面积最小,为36.3 m。同一日内,夜晚源区面积较白天大。在日和季尺度上,大气稳定度是影响通量源区范围的一个重要因素。

延河流域径流和输沙周期变化特征的小波分析

用延河流域甘谷驿站1953—2000年实测月径流深和输沙模数数据和1957—2000年月均面降雨数据,采用小波多尺度方法,分析延河流域主要水文要素的周期及其变化特征。结果表明:延河流域降雨、径流和输沙存在着显著的周期,且其大小非常接近,为3.0、6.5、13.0和23.0 a。降雨、径流和输沙主周期分别是3.0、23.0和23.0 a。延河流域20世纪70年代后降雨量年际分配趋于均匀。3 a对应的小尺度上,70—80年代初3个水文序列对应曲线出现紊乱现象,与该时期大规模水利水土保持措施的修建有关。80年代后,由于水利水土保持措施减水减沙效益的削弱,3条曲线重新趋于一致。13 a对应的中尺度和23 a对应的大尺度上,均出现径流和输沙曲线不同步,或者滞后于降雨曲线现象。降水是径流和输沙周期性变化的主要外动力因子,人类活动导致的流域下垫面变化则是不可忽视的另一重要原因。

一种新型SOI Mach-Zehnder干涉型电光调制器的设计

在超紧缩双曲锥形3 dB多模干涉耦合器的基础上，设计了一种新的Silicon-on-insulator (SOI) Mach-Zehnder干涉型电光调制器。与传统的Y分支器相比，双曲锥形3 dB耦合器的制作容差大，而长度缩短了近30％，使得整个器件的尺寸大幅减小。调制区采用横向注入的PIN结构，模拟结果表明

氢化非晶氧化硅薄膜的微结构及光致发光的研究

利用等离子增强化学气相沉积技术制备了一组含量不同的氢化非晶氧化硅(a-SiO_x:H)薄膜,室温下在550～900 nm的波长范围内观察到了两个强的发光带:一个是由峰位在670 nm(1.85 eV)左右的主峰和峰位在835 nm(1.46 eV)的伴峰组成的包络,另一个只能在氮气氛中1170℃退火后的样品中观测到,峰位大约在850 nm。通过对红外谱和微区Raman谱的分析,认为这二个发光带可能分别与存在于薄膜中的a-Si原子团和Si纳米晶粒有关。

Influence of crystal perfection on the reverse leakage current of the SiGe Si p-n heterojunction diodes

Double-crystal X-ray diffraction and I-V characterization have been carried out on the GSMBE grown SiGe/Si p-n heterojunction materials. Results show that the SiGe alloys crystalline quality and the misfit dislocations are critical influences on the reverse leakage current. The crystal perfection and/or the degree of metastability of the Sice alloys have been estimated in terms of the model proposed by Tsao with the experimental results. High-quality p-n heterojunction diodes can be obtained by optimizing the SiGe alloy structures, which limit the alloys in the metastable states. (C) 1999 Elsevier Science B.V. All rights reserved.