CORRELATION OF ZONA-BINDING WITH OOCYTE MATURATION AND SPERM MOTILITY IN RHESUS-MONKEYS BY HEMIZONA ASSAY

The hemizona assay (HZA) in Rhesus monkeys was employed to study the correlation of zona-binding ability with sperm motility or with naturally developing oocytes at various maturational stages. Oocytes from unstimulated ovaries were retrieved within 2 hr from monkeys sacrificed for vaccine production (in reproductive season, but with their menstrual cycles not determined). Oocytes were divided into four groups based on their morphological maturation: 1) Oocytes surrounded by more than one cumulus layer (MC); 2) Oocytes retaining intact germinal vesicle nuclei (GV); 3) Oocytes with germinal vesicle breakdown showing distinct perivitelline space (PVS); and 4) Oocytes extruding the first polar body (PB1). The mean numbers of sperm bound to hemizona for PBI, PVS, GV, and MC groups were 132.9 +/- 12.0, 71.5 +/- 10.1, 36.1 +/- 4.0, and 20.1 +/- 2.9 (Mean +/- SE), respectively. The four groups showed significant differences from each other in sperm/egg binding ability (P < 0.01). The number of bound sperm significantly increased with oocyte maturation. The present study also showed that zona-binding ability was also affected by sperm motility. For sperm with 67.7% motility and sperm with 31.2% motility, the average numbers of bound sperm were 43.5 +/- 2.2 and 25.3 +/- 2.9 (Mean +/- SE), respectively. There was significantly higher binding ability for sperm with higher motility (P < 0.01). The results suggest that: 1)The rhesus monkey model can serve as a very sensitive model for studying sperm/egg interaction by HZA; 2) Sperm motility positively correlated with sperm/egg binding; and 3) Sperm/egg binding ability increases with oocyte maturation. The binding ability is highest when oocytes matured to the PB1 stage, which is also the best opportunity for fertilization. This is strong evidence for the ''zona maturation'' hypothesis. (C) 1994 Wiley-Liss, Inc.

Homologs of eukaryotic Ras superfamily proteins in prokaryotes and their novel phylogenetic correlation with their eukaryotic analogs

Ras superfamily proteins are key regulators in a wide variety of cellular processes. Previously, they were considered to be specific to eukaryotes, and MglA, a group of obviously different prokaryotic proteins, were recognized as their only prokaryotic an

Statistical correlation between protein secondary structure and messenger RNA stem-loop structure

Anew integrated sequence-structure database, called IADE (Integrated ASTRAL-DSSP-EMBL), incorporating matching mRNA sequence, amino acid sequence, and protein secondary structural data, is constructed. It includes 648 protein domains. Based on the IADE database, we studied the relation between RNA stem-loop frequencies and protein secondary structure. It was found that the alpha-helices and beta-strands on proteins tend to be preferably "coded" by mRNA stem region, while the coils on proteins tend to be preferably "coded" by mRNA loop region. These tendencies are more obvious if we observe the structural words (SWs). An SW is defined by a four-amino-acid-fragment that shows the pronounced secondary structural (alpha-helix or beta-strand) propensity. It is demonstrated that the deduced correlation between protein and mRNA structure can hardly be explained as the stochastic fluctuation effect. (C) 2003 Wiley Periodicals, Inc.

Development of a biotic index using the correlation of protozoan communities with chemical water quality

A method of comparing data on protozoan communities with chemical parameters is presented. Using data from an extensive survey of the River Hanjiang in China, each species of protozoa has been given a species pollution value (SPV) related to its occurrence in waters with different degrees of pollution. A comprehensive chemical index is calculated for each site based on water quality standards for eight chemical parameters. The index is calculated from the relationship between the observed levels of each chemical at a site, compared with the limits of the drinking water quality standards of the People's Republic of China. From the distribution of each species at sites with differing chemical index values, a SPV is calculated. The SPV for each species is obtained by summing the logarithmic value of 10 times the chemical pollution divided by the number of chemical parameters, then divided by the stations where the species occurs. The community pollution value (CPV), which is the average SPVs of all protozoa at a site, is used to evaluate water quality. The CPV has been shown to have a close correlation with the degree of water pollution. It is not necessary for all the protozoa in a sample to have SPVs listed in this paper, provided at least 56% of the protozoa in a sample have an SPV value, the CPV will be applicable.

PCDD/F-s, PCBs, HCHs and HCB in sediments and soils of Ya-Er lake area in China: Results on residual levels and correlation to the organic carbon and particle size

Sediments and soils collected from the Ya-Er Lake area in China were analysed for the polychlorinated dibenzo-p-dioxins and dibenzofurans (PCDD/Fs), polychlorinated biphenyl (PCBs), hexachlorocyclohexane (HCHs) and hexachlorobenzene (HCB). The results indicated the main pollution problems in the Ya-Er Lake area, which was heavily polluted by HCHs and chlorobenzenes, now is dominantly polluted by PCDD/Fs, PCBs and HCB. The occurrence of PCDD/Fs and PCBs with relatively high levels of HpCDDs, OCDD and low chlorinated-substituted PCBs, is attributed to the discharge of waste water and biodegradation. The vertical distributions of HCH-residues are related with the content of organic carbon and particle size. Copyright (C) 1996 Elsevier Science Ltd

First-principles study of UC2 and U2C3

The electronic structure and mechanical properties Of UC2 and U2C3 have been systematically investigated using first-principles calculations by the projector-augmented-wave (PAW) method. Furthermore, in order to describe precisely the strong on-site Coulomb repulsion among the localized U 5f electrons, we adopt the generalized gradient approximation +U formalisms for the exchange-correlation term. We show that our calculated structural parameters and electronic properties for UC2 and U2C3 are in good agreement with the experimental data by choosing an appropriate Hubbard U = 3 eV. As for the chemical bonding nature, the contour plot of charge density and total density of states suggest that UC2 and U2C3 are metallic mainly contributed by the 5f electrons, mixed with significant covalent component resulted from the strong C-C bonds. The present results also illustrate that the metal-carbon (U-C) bonding and the carbon-carbon covalent bonding in U2C3 are somewhat weaker than those in UC2, leading to the weaker thermodynamic stability at high temperature as observed by experiments.

Inductively coupled plasma etching in fabrication of 2D InP-based photonic crystals

The authors developed an inductively coupled plasma etching process for the fabrication of hole-type photonic crystals in InP. The etching was performed at 70 degrees C using BCl3/Cl-2 chemistries. A high etch rate of 1.4 mu m/min was obtained for 200 nm diameter holes. The process also yields nearly cylindrical hole shape with a 10.8 aspect ratio and more than 85 degrees straightness of the smooth sidewall. Surface-emitting photonic crystal laser and edge emitting one were demonstrated in the experiments.

Correlation between Er3+ emission and Si clusters in Erbium-doped a-SiOx : H films

Erbium-doped hydrogenated amorphous silicon suboxide films containing silicon clusters (a-SiOx:H) were prepared. The samples exhibited photoluminescence (PL) peaks at around 750nm and 1.54 mu m, which could be assigned to the electron-hole recombination in silicon clusters and the intra-4f transition in Er3+, respectively. We compared annealing behaviors of Si clusters and Er3+ emission and found that Si clusters emission depends strongly upon crystallinity of Si clusters, whereas Er3+ emission is not sensitive to whether it is Si nanocrystals (nc-Si) or amorphous Si (a-Si) clusters. The erbium-doped a-SiOx:H films containing either a-Si clusters or nc-Si have the same kind of Er3+ -emitting centers. Based on these results, it is concluded that a-Si clusters can play the same role on Er3+ excitation as nc-Si. (c) 2004 Elsevier B.V. All rights reserved.

The correlation between preferred orientation and performance of ITO thin films

The tin-doped indium oxide (ITO) thin films were prepared by reactive thermal evaporation on the glass substrates. The effects of substrate temperatures (T-s) on the grain preferred orientation, the electrical and optical properties of ITO films were studied. X-ray diffraction (XRD) patterns indicated that the preferred orientation of film changes from (222) to (400) as T, > 200 degrees C. It can be explained by that the low-index crystallographic planes are easier to be formed when the adatoms have high surface mobility. The Hall measurements indicated that both the concentration and mobility of carrier increase with increasing T,,,. The grain orientation of film does not influence the transmissivity and the carrier concentration, but enhances the carrier mobility. The transmissivity of ITO films is over 90% in the visible wavelength region (except that of the film deposited at 125 degrees C). A minimum resistivity of 5 X 10-4 Omega cm is achieved for the (400) preferred orientation film. Thus, the highest figure of merit of 3.5 x 10(-2) square/Omega is obtained for the film with (400) preferred orientation. The correlation between the preferred orientation and electrical and optical properties are discussed.

Effect of electron-hole spatial correlation on spin relaxation dynamics in InAs submonolayer

Using time-resolved photoluminescence and time-resolved Kerr rotation spectroscopy, we explore the unique electron spin behavior in an InAs submonolayer sandwiched in a GaAs matrix, which shows very different spin characteristics under resonant and non-resonant excitations. While a very long spin relaxation lifetime of a few nanoseconds at low temperature is observed under non-resonant excitation, it decreases dramatically under resonant excitation. These interesting results are attributed to the difference in electron-hole interactions caused by non-geminate or geminate capture of photo-generated electron-hole pairs in the two excitation cases, and provide a direct verification of the electron-hole spatial correlation effect on electron spin relaxation. (c) 2007 Elsevier Ltd. All rights reserved.

Optical interleaver based on directional coupler in a 2D photonic crystal slab with triangular lattice of air holes

A small-size optical interleaver based on directional coupler in a 2D photonic crystal slab with triangular lattice of air holes is designed and theoretically simulated using plane wave expansion and finite-difference time-domain method. The interleaver is formed by two parallel and identical photonic crystal slab waveguides which are separated by three rows of air holes. The coupling region is designed below the light line to avoid vertical radiation. The simulated results show that the coupling coefficient is increased and the final length of the interleaver is decreased by enlarging the radius of the middle row of air holes. The transmission properties are analyzed after the interleaver's structure is optimized, and around 100 GHz channel spacing can be got when the length of the interleaver is chosen as 40.5 mu m. (c) 2006 Elsevier B.V. All rights reserved.

Correlation between optical and structural properties of (Al,Ga)N layers grown by MOCVD

For both, (Al,Ga)N with low Al content grown on a GaN nucleation layer and (AI,Ga)N with high Al content gown on an AlN nucleation layer, the inhomogeneous distribution of the luminescence is linked to the distribution of defects, which may be due to inversion domains. In the former system, defect regions exhibit a much lower Al content than the nominal one leading to a splitting of the respective luminescence spectra. In the latter system, a domain-like growth is observed with a pyramidal surface morphology and non-radiative recombination within the domain boundaries. (c) 2007 WILEYNCH Verlag GmbH & Co. KGaA, Weinheim.

Correlation between optical and electrical properties in In0.52Al0.48As/InxGa1-xAs metamorphic high-electron-mobility-transistor structures on GaAs substrates

4.2 K photoluminescence (PL) and 77 K standard Hall-effect measurements were performed for In0.52Al0.48As/InxGa1-xAs metamorphic high-electron-mobility-transistor (HEMT) structures grown on GaAs substrates with different indium contents in the InxGa1-xAs well or different Si delta-doping concentrations. It was found that electron concentrations increased with increasing PL intensity ratio of the "forbidden" transition (the second electron subband to the first heavy-hole subband) to the sum of the "allowed" transition (the first electron subband to the first heavy-hole subband) and the forbidden transition. And electron mobilities decreased with increasing product of the average full width at half maximum of allowed and forbidden transitions and the electron effective mass in the InxGa1-xAs quantum well. These results show that PL measurements are a good supplemental tool to Hall-effect measurements in optimization of the HEMT layer structure. (c) 2006 American Institute of Physics.