Origin and evolution of new genes

Organisms have variable genome sizes and contain different numbers of genes. This difference demonstrates that new gene origination is a fundamental process in evolutionary biology. Though the study of the origination of new genes dated back more than hal

Bioactive Nortriterpenoids from Schisandra grandiflora

Three new nortriterpenoids, schigrandilactones A-C (1-3), along with eight known compounds, were isolated from an organic solvent extract of Schisandra grandiflora. Compounds I and 2 feature a spirocyclic moiety in their structures, and compound 3 was cha

金环蛇蛇毒对S180, EAC 腹水癌细胞的细胞毒性作用

　目的　探讨金环蛇毒对S180, EAC 腹水癌细胞的细胞毒性作用。　方法　采用小白鼠腹腔和皮下 接种S180, EAC 腹水癌细胞造成小白鼠腹水模型后腹腔注射金环蛇毒。　结果　腹腔注射金环蛇毒, 能 抑制肿瘤细胞的生长, 降低接种率。但不能完全控制腹水和癌细胞的生长。体外试验表明有明显的细胞毒 作用。台酚蓝染色镜检可见死细胞显著增加, 腹水图片检查给药后细胞膜破裂, 纤维化坏死明显。　结论 　能延长小白鼠存活时间。

洞庭湖浮游生物群落DNA指纹与理化因子的关系

对东洞庭湖7个采样站点的浮游生物群落DNA多态性进行了RAPD指纹分析,并探讨了其DNA指纹与理化因子的关系。结果如下:(1)从80条随机引物中筛选出的11条引物共获得148条谱带,多态率为98.6%;所用引物在各站点可获得45—70条扩增谱带,平均为57.6条,其中Ⅳ站最少;(2)Ⅳ站的泥沙含量最高(75.5mg/L),其他各站在1.2—40.3mg/L;各站点间的pH值比较接近,都呈弱碱性;Ⅰ站的TN、TDN及TP含量最高,Ⅲ站的TDP最高,但各站点相差不大。相似性聚类分析表明,浮游生物群落DNA指纹

白鳍豚栖息活动区及其群体活动的初步研究

<正> 我国特有的稀珍豚类白鱀豚正处于频危状况,它们呈点块状分布在长江中、下游1600多公里的干流中,现存活头数不足200头,目前我国政府已将白鳍豚的资源保护工作,提高到了抢救的高度。为了切实保护白鳍豚,不仅要了解它的分布、数量、资源下降的原因,还要摸清它的栖息活动区以及它的群体活动规律。陈佩薰等(1980)、周开亚等(1980),对白鳍豚的生境作过一般性叙述,截至

鲤科的科下类群及其宗系发生关系

<正> 鲤科为鲤形目中最大的科,拥有275属1600种(Pattern 1975)。早在100多年前Bleeker(1863)已对该科进行了较细的类群划分,嗣后,其他作者也先后做过这方面的工作。Regan(1911)发现某些骨骼性状在宗系发生(phylogeny)上具有一定的重要性,而另一些性状则对划分类群没有意义。Berg(1912,1940)依据较特别的外部形态来规定

Sol-gel method for the preparation of solid-phase microextraction fibers

A novel sol-gel method is applied for the preparation of solid-phase microextraction (SPME) fibers. Scanning electron microscopy experiments suggested a porous structure for the poly(dimethylsiloxane) (PDMS) coating. SPME-GC analysis provided evidence that the sol-gel fibers have some advantages, such as high thermal stability, efficient extraction rates, high velocities of mass transfer, and spacious range of application.

Temperature dependence of hole spin relaxation in ultrathin InAs monolayers

The temperature dependence of hole spin relaxation time in both neutral and n-doped ultrathin InAs monolayers has been investigated. It has been suggested that D'yakonov-Perel (DP) mechanism dominates the spin relaxation process at both low and high temperature regimes. The appearance of a peak in temperature dependent spin relaxation time reveals the important contribution of Coulomb scatterings between carriers to the spin kinetics at low temperature, though electron-phonon scattering becomes dominant at higher temperatures. Increased electron screening effect in the n-doped sample has been suggested to account for the shortened spin relaxation time compared with the undoped one. The results suggest that hole spins are also promising for building solid-state qubits.

Direct observation of coherent spin transfer processes in an InGaAs/GaAs quantum well via two-color time-resolved Kerr rotation measurements

A two-color time-resolved Kerr rotation spectroscopy system was built, with a femtosecond Ti:sapphire laser and a photonic crystal fiber, to study coherent spin transfer processes in an InGaAs/GaAs quantum well sample. The femtosecond Ti:sapphire laser plays two roles: besides providing a pump beam with a tunable wavelength, it also excites the photonic crystal fiber to generate supercontinuum light ranging from 500 nm to 1600 nm, from which a probe beam with a desirable wavelength is selected with a suitable interference filter. With such a system, we studied spin transfer processes between two semiconductors of different gaps in an InGaAs/GaAs quantum well sample. We found that electron spins generated in the GaAs barrier were transferred coherently into the InGaAs quantum well. A model based on rate equations and Bloch-Torrey equations is used to describe the coherent spin transfer processes quantitatively. With this model, we obtain an effective electron spin accumulation time of 21 ps in the InGaAs quantum well.

Silicon-on-insulating multi-layers for total-dose irradiation hardness

Silicon-on-insulating multi-layer (SOIM) materials were fabricated by co-implantation of oxygen and nitrogen ions with different energies and doses. The multilayer microstructure was investigated by cross-sectional transmission electron microscopy. P-channel metal-oxide-semiconductor (PMOS) transistors and metal-semiconductor-insulator-semiconductor (MSIS) capacitors were produced by these materials. After the irradiated total dose reaches 3 x 10(5) rad (Si), the threshold voltage of the SOIM-based PMOS transistor only shifts 0.07 V, while thin silicon-on-insulating buried-oxide SIMOX-based PMOS transistors have a shift of 1.2V, where SIMOX represents the separated by implanted oxygen. The difference of capacitance of the SOIM-based MSIS capacitors before and after irradiation is less than that of the thin-box SIMOX-based MSIS capacitor. The results suggest that the SOIM materials have a more remarkable irradiation tolerance of total dose effect, compared to the thin-buried-oxide SIMOX materials.

Monolithically integrated semiconductor optical amplifier and electroabsorption modulator with dual-waveguide spot-size converter input and output

We have demonstrated an electroabsorption modulator and semiconductor optical amplifier monolithically integrated with novel dual-waveguide spot-size converters (SSC) at the input and output ports for low-loss coupling to a planar light-guide circuit silica waveguide or cleaved single-mode optical fibre. The device was fabricated by means of selective-area MOVPE growth, quantum well intermixing and asymmetric twin waveguide technologies with only a three-step low-pressure MOVPE growth. For the device structure, in the SOA/EAM section, a double ridge structure was employed to reduce the EAM capacitances and enable high bit-rate operation. In the SSC sections, buried ridge structure (BRS) was incorporated. Such a combination of ridge, ATG and BRS structure is reported for the first time in which it can take advantage of easy processing of the ridge structure and the excellent mode characteristic of BRS. At the wavelength range of 1550-1600 nm, lossless operation with extinction ratios of 25 dB dc and more than 10 GHz 3 dB bandwidth is successfully achieved, The beam divergence angles of the input and output ports of the device are as small as 8.0 degrees x 12.6 degrees, resulting in 3.0 dB coupling loss with a cleaved single-mode optical fibre.

Lossless electroabsorption modulator monolithically rntegrated with a semiconductor optical amplifier and dual-wavegulde spot-size converters

Semiconductor optical amplifier and electroabsorption modulator monolithically integrated with dual-waveguide spot-size converters at the input and output ports is demonstrated by means of selective area growth, quantum-well intermixing, and asymmetric twin waveguide technologies. At the wavelength range of 1550 similar to 1600 nm, lossless operation with extinction ratios of 25-dB dc and 11.8-dB radio frequency and more than 10-GHz 3-dB modulation bandwidth is successfully achieved. The output beam divergence angles of the device in the horizontal and vertical directions are as small as 7.3 degrees x 10.6 degrees, respectively, resulting in 3.0-dB coupling loss with cleaved single-mode optical fiber.

Low power-consumption and high response frequency thermo-optic variable optical Attenuators based on silicon-on-insulator materials

A novel silicon-on-insulator thermo-optic variable optical attenuator with isolated grooves based on a multimode interference coupler principle is fabricated by the inductive coupled plasma etching technology. The maximum fibre-to-fibre insertion loss is lower than 2.2 dB, the dynamic attenuation range is from 0 to 30 dB in the wavelength range 1500-1600 nm, and the maximum power consumption is only 140 mW. The response frequency of the fabricated variable optical attenuator is about 30 kHz. Compared to the variable optical attenuator without isolated grooves, the maximum power consumption decreases more than 220 mW, and the response frequency rises are more than 20 kHz.

Broad-band semiconductor optical amplifiers

Broad-band semiconductor optical amplifiers (SOAs) with different thicknesses and thin bulk tensile-strained active layers were fabricated and studied. Amplified spontaneous emission (ASE) spectra and gain spectra of SOAs were measured and analyzed at different CW biases. A maximal 3 dB ASE bandwidth of 136 nm ranging from 1480 to 1616 nm, and a 3 dB optical amplifier gain bandwidth of about 90 nm ranging from 1510 to 1600 nm, were obtained for the very thin bulk active SOA. Other SOAs characteristics such as saturation output power and polarization sensitivity were measured and compared. (c) 2006 Elsevier B.V. All rights reserved.

Electroabsorption modulated semiconductor optical amplifier monolithically integrated with spot-size converters

We have demonstrated an electroabsorption modulator (EAM) and semiconductor optical amplifier (SOA) monolithically integrated with novel dual-waveguide spot-size converters (SSCs) at the input and output ports for low-loss coupling to planar light-guide circuit silica waveguide or cleaved single-mode optical fiber. The device is fabricated by means of selective-area MOVPE growth (SAG), quantum well intermixing (QWI) and asymmetric twin waveguide (ATG) technologies with only three steps low-pressure MOVPE growth. For the device structure, in SOA/EAM section, double ridge structure was employed to reduce the EAM capacitances and enable high bit-rate operation. In the SSC sections, buried ridge stripe (BRS) were incorporated. Such a combination of ridge, ATG and BRS structure is reported for the first time in which it can take advantage of both easy processing of ridge structure and the excellent mode characteristic of BRS. At the wavelength range of 1550-1600 nm, lossless operation with extinction ratios of 25 dB DC and more than 10 GHz 3-dB bandwidth is successfully achieved. The beam divergence angles of the input and output ports of the device are as small as 8.0 degrees x 12.6 degrees, resulting in 3.0 dB coupling loss with cleaved single-mode optical fiber. (c) 2005 Elsevier B.V. All rights reserved.