Generation of the high efficiency high peak-power femtosecond blue optical pulse

The analysis and calculation of the compensation for the phase mismatch of the frequency-doubling using the frequency space chirp introduced from prisms are made. The result shows that suitable lens can compensate the phase mismatch in a certain extent resulting from wide femtosecond spectrum when the spectrum is space chirped. By means of this method, the experiment of second harmonic generation is carried out using a home-made femtosecond KLM Ti:sapphire laser and BBO crystal. The conversion efficiency of SHG is 63 %. The average output power of blue light is 320 mW. The central wavelength is 420 nm. The spectrum bandwidth is 5.5 nm. It can sustain the pulse width of 33.6 fs. The tuning range of blue light is 404-420 nm,when the femtosecond Ti:sapphire optical pulse is tuned using the prisms in the cavity.

Study on pulsed laser ablation and deposition of ZnO thin films by L-MBE

ZnO, as a wide-band gap semiconductor, has recently become a new research focus in the field of ultraviolet optoelectronic semiconductors. Laser molecular beam epitaxy (L-MBE) is quite useful for the unit cell layer-by-layer epitaxial growth of zinc oxide thin films from the sintered ceramic target. The ZnO ceramic target with high purity was ablated by KrF laser pulses in an ultra high vacuum to deposit ZnO thin film during the process of L-MBE. It is found that the deposition rate of ZnO thin film by L-MBE is much lower than that by conventional pulsed laser deposition (PLD). Based on the experimental phenomena in the ZnO thin film growth process and the thermal-controlling mechanism of the nanosecond (ns) pulsed laser ablation of ZnO ceramic target, the suggested effective ablating time during the pulse duration can explain the very low deposition rate of the ZnO film by L-MBE. The unique dynamic mechanism for growing ZnO thin film is analyzed. Both the high energy of the deposition species and the low growth rate of the film are really beneficial for the L-MBE growth of the ZnO thin film with high crystallinity at low temperature.

Non-collinear CPOPA seeded by an Yb3+-doped self-starting passive mode-locked fiber laser

Using a home-made seed at 1053 nm from a Yb3+-doped passively mode-locked fiber laser of 1.5 nJ/pulse, 362 ps pulse duration with a repetition rate of 3.842 MHz, a compact, low cost, stable and excellent beam quality non-collinear chirped pulse optical parametric amplifier omitting the bulky pulse stretcher has been demonstrated. A gain higher than 4.0 x 10(6), single pulse energy exceeding 6 mJ with fluctuations less than 2% rms, 14 nm amplified signal spectrum and recompressed pulse duration of 525 fs are achieved. This provides a novel and simple amplification scheme. (c) 2007 Optical Society of America.

Reducing group-velocity-dispersion-dependent broadening of stimulated Brillouin scattering slow light in an optical fiber by use of a single pump laser

We propose a method of effectively extending the stimulated Brillouin scattering (SBS) gain bandwidth in a single-mode optical fiber to reduce group-velocity-dispersion (GVD)-dependent pulse spread of SBS slow light. This can be done by overlapping doublet SBS gain spectra synthesized from a single pump laser. Numerical calculations are performed to verify our proposed method. We find that there exists the optimum spectral separation between two center frequencies of the doublet SBS gain spectrum with respect to the inherent spectral width of the pump laser, which makes it possible to effectively reduce the signal pulse broadening due to GVD. We show that the maximum time delay of the amplified signal pulse can be approximately two times longer than that by a previously reported method using a single broadband pump laser. (c) 2008 Optical Society of America.

Eye-safe, high-energy, single-mode all-fiber laser with widely tunable repetition rate

We present a novel high-energy, single-mode, all-fiber-based master-oscillator-power-amplifier (MOPA) laser system operating in the C-band with 3.3-ns pulses and a very widely tunable repetition rate, ranging from 30 kHz to 50 MHz. The laser with a maximum pulse energy of 25 mu J and a repetition rate of 30 kHz is obtained at, a wavelength of 1548 nm by using a double-clad, single-mode, Er:Yb co-doped fiber power amplifier.

Environmentally stable ytterbium figure-of-eight fiber laser producing 177-fs pulses

Pulses of 177 fs and 1035 nm, with average power of 1.2 mW, have been generated directly from a passively mode-locked Yb-doped figure-of-eight fiber laser, with a nonlinear optical loop mirror for mode-locking and pairs of diffraction gratings for intracavity dispersion compensation. To our knowledge, these are the shortest pulses ever to come from a passively mode-locked Yb-doped figure-of-eight fiber laser. This represents a 5-fold reduction in pulse duration compared with that of previously reported passively mode-locked Yb-doped figure-of-eight fiber lasers. Stable pulse trains are produced at the fundamental repetition rate of the resonator, 24.0 MHz. (c) 2007 Elsevier B.V. All rights reserved.

Generation of 207-femtosecond pulses from a ytterbium figure-of-eight fibre laser

We report the generation of 207-fs pulses with 1.2mW average power at 1036 nm directly from a passively mode-locked Yb-doped fibre laser with a nonlinear optical loop mirror for mode-locking and pairs of diffraction gratings for intracavity dispersion compensation. These results imply a 4-fold reduction in pulse duration over previously reported figure-of-eight cavity passively mode-locked Yb-doped fibre lasers. Stable pulse trains are produced at the fundamental repetition rate of the resonator, 24.0MHz. On the other hand, this laser offers a cleaner spectrum and greater stability and is completely self-starting.

Low Threshold Stretched-pulses Mode-locked Er3+-doped Fiber Laser with Ring Cavity

National Natural Science Foundationa of China(602537060，60408002)

40-GHz wavelength tunable mode-locked SOA-based fiber laser with 40-nm tuning range

A 40-GHz wavelength tunable mode-locked fiber ring laser based oil cross-gain modulation in a semiconductor optical amplifier (SOA) is presented. Pulse trains with a pulse width of 10.5 ps at 40-GHz repetition frequency are obtained. The laser operates with almost 40-nm tuning range. The relationship between the key laser parameters and the output pulse characteristics is analyzed experimentally.

Compact and efficient triple-pass optical parametric chirped pulse amplification

Compact and efficient triple-pass optical parametric chirped pulse amplification in a single crystal has been demonstrated. The signal was triple-pass amplified in a single nonlinear crystal by a nanosecond pump pulse. The first-pass optical parametric amplification is completely phase matched in the plane of the maximum effective nonlinearity, and the other two passes work symmetrically near to the first-pass optical parametric amplification plane. This architecture efficiently increases the overall gain, overcomes the optical parametric fluorescence, and clearly simplifies the amplification scheme.

HIGH-POWER 2-DIMENSIONAL QUANTUM-WIRE LASER ARRAYS

GaAs/AIGaAs two-dimensional quantum-well wire laser arrays fabricated by metal-organic chemical vapour deposition on nonplanar substrates have realised a linear light pulse output Fewer of over 100mW. This is the highest figure reported to date for all kinds of quantum-well wire lasers.

Pulse Compression by Filamentation in Argon with an Acoustic Optical Programmable Dispersive Filter for Predispersion Compensation

We have experimentally demonstrated pulses 0.4 mJ in duration smaller than 12 fs with an excellent spatial beam profile by self-guided propagation in argon. The original 52 fs pulses from the chirped pulsed amplification laser system are first precompressed to 32 fs by inserting an acoustic optical programmable dispersive filter instrument into the laser system for spectrum reshaping and dispersion compensation, and the pulse spectrum is subsequently broadened by filamentation in an argon cell. By using chirped mirrors for post-dispersion compensation, the pulses are successfully compressed to smaller than 12 fs.

5.3-W Nd:YVO_4 passively mode-locked laser by a novel semiconductor saturable absorber mirror

We report a diode end-pumped continuous wave (CW) passively mode-locked Nd:YVO4 laser with a homemade semiconductor saturable absorber mirror (SESAM). The maximum average output power is 5.3 W at the incident pump power of 17 W, which corresponds to an optical-optical conversion efficiency of 31.2% and slope efficiency of 34.7%. The corresponding optical spectrum has a 0.2-nm full width at half maximum (FWHM), and the pulse repetition rate is 83 MHz.

Material Growth and Device Fabrication of GaN-Based Blue-Violet Laser Diodes

Studies on first GaN-based blue-violet laser diodes(LDs) in China mainland are reported.High quality GaN materials as well as GaN-based quantum wells laser structures are grown by metal-organic chemical vapor deposition method.The X-ray double-crystal diffraction rocking curve measurements show the full-width half maximum of 180" and 185" for (0002) symmetric reflection and (10(-1)2) skew reflection,respectively.A room temperature mobility of 850cm2/(V·s) is obtained for a 3μm thick GaN film.Gain guided and ridge geometry waveguide laser diodes are fabricated with cleaved facet mirrors at room temperature under pulse current injection.The lasing wavelength is 405.9nm.A threshold current density of 5kA/cm2 and an output light power over 100mW are obtained for ridge geometry waveguide laser diodes.

Passive Q-switching of diode-pumped Yb:YAG microchip laser with ion-implanted GaAs

We reported a passive Q-switched diode laser pumped Yb:YAG microchip laser with an ion-implanted semi-insulating GaAs wafer. The wafer was implanted with 400-keV As^(+) in the concentration of 10^(16) ions/cm^(2). To decrease the non-saturable loss, we annealed the ion-implanted GaAs at 500 oC for 5 minutes and coated both sides of the ion-implanted GaAs with antireflection (AR) and highreflection (HR) films, respectively. Using GaAs wafer as an absorber and an output coupler, we obtained 52-ns pulse duration of single pulse.