Effects of annealing on the photoluminescence of He ion implanted sapphire after 230-MeV Pb ion irradiation

Single crystal sapphire (Al2O3) samples implanted with 110 keV He and irradiated at 320 K by Pb-208(27), ions with energy of 1.1 MeV/u to the fluences ranging from 1 X 10(12) to 5 X 10(14) ion/cm(2) and subsequently annealed at 600, 900 and 1100 K. The obtained PL spectra showed that emission peaks centred at 375, 390, 413, and 450 nm appeared in irradiated samples. The peak of 390 ran became very intense after 600 K annealing. The peak of 390 nm weakened and 510 nm peak started to build up at 900 K annealing, the peak of 390 nm vanished and 510 nm peak increased with the annealing temperature rising to 1100 K. Infrared spectra showed a broadening of the absorption band between 460 cm(-1), and 510 cm(-1) indicating strongly damaged regions being formed in the Al2O3 samples and position shift of the absorption band at 1000-1300 cm(-1) towards higher wavenumber after Pb irradiation.

Study of n=2, Delta n=0 transition of Be-, B-, C-, N- and O-like sequence in the beam-foil spectrum of titanium

The foil-excited the spectrum of highly stripped titanium ions between 12-40 nm has been studied. Titanium ions of 80 and 120 MeV were provided by the HI-13 tandem accelerator at the China Institute of Atomic Energy. GIM-957 XUV-VUV monochromator was refocused to get highly-resolved spectra. Our experimental results and the published spectral data of laser-produced plasma show agreement in nearly all cases within +/- 0.03 nm. The spectra contained some weak or strong lines previously unclassified. These spectral lines mainly belong to 2s2p(2) for TiXVIII, 2p(3) for TiXVIII, 2s2p(3) for TiXVII, 2p(6)4p for Ti XII and 2p(6)3d for Ti XII transitions.

Photoluminescence of inert-gas ion implanted sapphire after 230-MeV Pb ion irradiation

In the present work the photoluminescence (PL) character of sapphire implanted with 110-keV He, Ar or Ne ions and subsequently irradiated with 230-MeV Pb was studied. The implantation was performed at 320 and 600 K using fluences from 5.0 x 10(16) to 2.0 x 10(17) ions/cm(2). The Pb ion irradiation was carried out at 320 K. The obtained PL spectra showed peaks at 375, 413 and 450 nm with maximum intensity at an implantation fluence of 5.0 x 10(16) ions/cm(2) and a new peak at 390 nm appeared in the He-implanted and subsequently Pb-irradiated samples. Infrared spectra showed a broadening of the absorption band between 460 and 510 nm indicating strongly damaged regions formed in the Al2O3 samples. A possible PL mechanism is discussed.

Enhanced photoluminescence of Ar+ implanted sapphire before and after annealing

In this paper, we studied the changes in the photoluminescence spectra of the Ar+ ion implanted monocrystalline sapphire annealed at different atmospheres and different temperatures. Single crystals of sapphire (Al2O3) with the (1 0 (1) over bar 0) (m-samples) orientation were implanted at 623 K with 110 keV Ar+ ions to a fluence of 9.5 x 10(16) ions/cm(2). Photoluminescence measurement of the as-implanted sample shows a new emission band at 506 nm, which is attributed to the production of interstitial Al atoms. The intensity of emission band at 506 nm first increased then decreased with increase in annealing temperature. For the same annealing temperature, the intensity of PL peak at 506 nm of the sample annealed in air was higher than the sample annealed in vacuum. The experimental results show that the intensity of the PL peak at 506 nm of Ar-implanted sapphire can be enhanced by subsequent annealing with an enhancement of nearly 20 times. The influence of thermal annealing of the Ar-implanted samples on the new 506 nm emission band was discussed. (C) 2009 Elsevier B.V. All rights reserved.

X-ray spectrum emitted by the impact of Xe-129(q+) on Mo surface

We studied the characteristic X-ray spectra produced by the interaction of highly charged ions of X-129(q+) (q =25, 26, 27) with surface of metallic Mo. The experimental result shows that highly charged ions can excite the characteristic X-ray spectra of L-shell of Mo when the beam' s intensity is not more than 120 nA. The X-ray yield of single ion reaches a quantitative level of 10(-8) and increases with the increment of the ion' s kinetic energy and ionic charge (potential energy). By measuring the X-ray spectra of Mo-L alpha(1) the M-level lifetime of Mo atom is estimated by using Heisenberg uncertainty relation.

~(129)Xe~(q+)激发Mo表面产生的X射线谱；X-ray spectrum emitted by the impact of ~(129)Xe~(q+) on Mo surface

研究了高电荷态离子129Xeq+(q=25,26,27)入射金属Mo表面产生的特征X射线谱.实验结果表明,在束流强度小于120nA条件下,高电荷态离子129Xeq+可以激发Mo的L壳层特征X射线谱.单离子X射线相对产额可达10-8量级,特征X射线的相对产额随入射离子的动能和电荷态(势能)的增加而增加.通过Mo原子的Lα1特征X射线谱,利用Heisenberg不确定关系对Mo原子的第M能级寿命进行了估算.

Theoretical study of the femtosecond-resolved photoelectron spectrum of the NO molecule

The effect of laser fields on the NO interaction potentials is obtained by the calculation of time-resolved photoelectron spectrum (TRPES) using the time-dependent wave-packet method. The calculation not only shows that the overlap of the pump-probe pulses makes some NO molecular "invisible" states visible, but also that the coupling strength and the positions of relevant curves change on increasing the laser intensity. These changed potentials affect their dynamical behavior and influence the shape and position of each peak in TRPES. That the coupling strength of relevant potentials can be changed by the field-matter interaction is consistent with our ab initio calculations.

Autler-townes splitting in the multiphoton resonance ionization spectrum of molecules produced by ultrashort laser pulses

We report for the first time the proper conditions to observe Autler-Townes splitting (ac-Stark splitting) from vibrationally coherent states belonging to the different electronic terms of a diatomic molecule. Wave packet dynamics simulations demonstrate that such a process is feasible by multiphoton resonance ionization of the molecule Na-2 with a single ultrashort intense laser pulse. With the ultrahigh time resolution of a femtosecond laser pulse, one can directly measure the absolute value of the transition dipole moment between any kinds of molecular states by this kind of Autler-Townes splitting, which is a function of the internuclear distance R.

Fabrication and characterization of CdTe nanoparticles attached to poly(4-vinylpyridine) nanofibers

The major objective of this work was to characterize the status of CdTe nanoparticles attached to the surface of poly(4-vinylpyridine) (P4VP) nanofibers. Scanning electron microscopy and transmission electron microscopy images indicated that the attachment of CdTe nanoparticles enlarged the diameter of P4VP nanofibers. Moreover, the results of the energy-dispersive X-ray spectrum and the electron diffraction pattern revealed that the deposition on the surface of P4VP nanofibers was CdTe in a cubic lattice

Ionic liquid-based "all-in-one" synthesis and photoluminescence properties of lanthanide fluorides

A facile route to the synthesis of LnF(3) nanocrystals has been accomplished in three ionic liquids (ILs) (OmimPF(6), OmimBF(4), and BmimPF(6)). The partial hydrolysis of PF6- and BF4- was utilized to introduce a new fluoride source. Uniform LnF(3) (Ln = La, Ce, Pr, Nd, Sm, Eu, Er), Tb3+-doped CeF3, and Eu3+-doped LaF3 nanocrystals could be obtained in a large scale, and the products were up to 0.15 g per 10 mL solvents. In the "all-in-one" systems, the ILs acted as solvents, reaction agents, and templates.

Template-free, surfactantless route to fabricate In(OH)(3) monocrystalline nanoarchitectures and their conversion to In2O3

In this work, a one-dimensional microrod-based three-dimensional flowerlike indium hydroxide (In(OH)(3)) structure was fabricated, without any templates or surfactants, using a well-known hydrothermal approach at a non-high temperature. In2O3 with similar morphology was formed by annealing In(OH)3 precursors and was characterized by Raman spectrum and photoluminescence (PL) spectrum in detail.

Band Gap Tunable, Donor-Acceptor-Donor Charge-Transfer Heteroquinoid-Based Chromophores: Near Infrared Photoluminescence and Electroluminescence

A series of D-pi-A-pi-D type of near-infrared (NIR) fluorescent compounds based on benzobis(thia diazole) and its selenium analogues were synthesized and fully characterized by H-1 and C-13 NMR, high-resolution mass spectrometry, and elemental analysis. The absorption fluorescence, and electrochemical properties were also studied. Photoluminescence of these chromophores ranges from 900 to 1600 nm and their band gaps are between 1.19 and 0.56 eV.