414 resultados para Light Emitting Diode


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By comparing the phosphorescence spectra of Gd(acac)(3) (acac=acetylacetone), Gd(TFacac)3 (TFacac=1,1,1-trifluoroacetylacetone), the effects of fluorine replacement of hydrogen on the triplet state energy of the ligands were revealed. Fluorine can lower the triplet state energy of Hacac and make it more suitable for energy transfer towards the D-5(4) state of terbium. Organic electroluminescent devices (OELDs) with the corresponding trivalent terbium complexes as emissive layers were fabricated. Triple-layer-type devices with a structure of glass substrate/ITO (indium tin oxide)/PVK [poly(N-vinylcarbazole)]/PVK : Tb complex: PBD [2-(4-biphenyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole]/PBD/Al exhibit bright green luminescence upon applying a dc voltage. The luminance of a device with Tb(TFacac)(3)phen (1,10-phenanthroline) and Tb( TFacac) 3 as emissive layer is higher than that of the corresponding devices with Tb(acac)(3)(phen) and Tb(acac)(3) as emissive layers. The EL device with Tb(TFacac)(3)(phen) as emitter exhibits characteristic emission of Tb3+ ions with a maximum luminance of 58 cd m(-2) at 25 V.

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A series of light-emitting poly(p-phenylene vinylene)s with triphenylamine units as hole-transporting moieties in the main chain were synthesized via Wittig condensation in good yields. The newly formed vinylene double bonds possessed a trans configuration, which was confirmed by Fourier transform infrared and NMR spectroscopy. The high glass-transition temperature (83-155 degreesC) and high decomposition temperature (> 300 degreesC) suggested that the resulting copolymers possessed high thermal stability. These copolymers, especially TAAPV1, possessed a high weight-average molecular weight (47,144) and a low polydispersity index (1.55). All the copolymers could be dissolved in common organic solvents, such as tetrahydrofuran (THF), CHCl3, CH2Cl2, and toluene, and exhibited intense photoluminesence in THF (the emission maxima were located from 478 to 535 nm) and in film (from 478 to 578 nm). The low onsets of the oxidation potential (0.6-0.75 V) suggested that the alternating copolymers possessed a good hole-transporting property due to the incorporation of triphenylamine moieties. (C) 2001 John Wiley & Sons, Inc.

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A series of novel nitrogen- and sulfur-containing conjugated polymers have been synthesized via an acid-induced self polycondensation of functional monomers with methyl sulfinyl group. They exhibit good solubility in common solvents, such as CHCl3, THF, DMF, DMSO, et al; and thus show excellent film-forming properties. They are used as hole-transport layer (HTL) in two-layer light-emitting diodes (ITO/polymer/Alq3/Mg:Ag). The typical turn-on voltage of these diodes is about 4 similar to 5V. The maximum brightness is about 3440cd/m(2) at 20 V. The maximum efficiency is estimated to be 0.15 Im/W at 10V.

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The recent development of electrochemiluminescence and its application including quantitative analysis, surface analysis, dynamics research, electron transfer research, and light emitting device are reviewed.

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A dye laser based on the soluble conjugated polymer, Poly[1,8-octanedioxy-2,6-dimethoxy-1,4-phenylene-1,2-ethenylene-1, 4-phenylene-1,2-ethenylene-3,5-dimethoxy-1,4-phenylene], has been fabricated. The laser was pumped by light pulses from the third harmonic radiation of an Nd:YAG laser. The lasing was observed in the blue wavelength region with the peak at 450 nm. The threshold energy is about 19 mu J. The energy conversion yield of the laser is about 3.4%. The maximum peak power of the laser output pulse arrives at about 20 kW.

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With a newly synthesized poly(p-phenylene vinylene) (PPV) multiblock copolymer used in a triple-layer structure, efficient green light-emitting diodes with low driving voltage have been fabricated. The devices are turned on at 2.5 V, the brightness at 5 V is above 100 cd/m(2) and at 7 V is about 1650 cd/m(2), with an external quantum efficiency of about 1%. (C) 1998 Elsevier Science S.A. All rights reserved.

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Three kinds of PPV-based copolymers were synthesized and characterized. Their luminescent properties were investigated and discussed by PL spectrum, and time-dependence luminescent spectrum in film and solution stare. The results show that in the range of our study, the PL intensity and lifetime of luminescent decay increase with the increasing length of flexible segments and the solution diluting, indicating the tendency of the increase of luminescent efficiency.

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Bright blue polymer light-emitting diodes have been fabricated by using the poly(p-phenylenevinylene)-based copolymers with 10 C long aliphatic chains as the electroluminescent layers, PBD in PMMA and Alq(3) as the electron-transporting layers, and aluminum as the cathode. The multilayer structure devices show 190 cd/m(2) light-emitting brightness at 460 nm, 15 V turn-on vol- tage. It is found that the intensities of photoluminescence and electroluminescence (EL) increase with increasing aliphatic chain length, the EL intensity and operation stability of these polymer light-emitting diodes can be improved by reasonable design of the structure.

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We fabricated a phosphor-conversion white light using an InGaN laser diode that emits 405 nm near-ultraviolet (n-UV) light and phosphors that emit in the blue and yellow regions when excited by the n-UV and blue light, respectively.The relationship of the luminous flux and the luminous efficacy of the white light with injection current was discussed. The luminous flux increased linearly with increasing current above the threshold of the laser diode, and at 80 mA injection current, the luminous flux and luminous efficacy were estimated to be 5.7 lm and 13 lm/w, respectively. The shift of the Commission International de I'Eclairage coordinates, color temperature, and color rendering index with current are very slight and negligible, which indicates that the blue and the yellow phosphors have an excellent stability and a highly stable white light can be obtained by this way. (c) 2008 American Institute of Physics.

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A phosphor-conversion white light using an InGaN laser diode that emits 405 nm near-ultraviolet (n-UV) light and phosphors that emit in the red/green/blue region when excited by the n-UV light was fabricated. The relationship of the luminous flux and the luminous efficacy of the white light with injection current were discussed. Based on the evaluation method for luminous efficacy of light sources established by the Commission International de I'Eclairage (CIE) and the phosphor used in this experiment, a theoretical analysis of the experiment results and the maximum luminous efficacy of this white light fabrication method were also presented.

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We fabricated a phosphor-conversion white light using an InGaN laser diode that emits 445 nm and phosphor that emits in the yellow region when excited by the blue laser light. At 500 mA injection current the luminous flux and the luminous efficacy were 113 lm and 44 lm/W, respectively. The relationship of the luminous flux and the luminous efficacy of the white light with an injection current were discussed. Based on the evaluation method for luminous efficacy of light sources established by the Commission International de I'Eclairage (CIE) and the phosphor used in this experiment, a theoretical analysis of the experiment results and the maximum luminous efficacy of this white light fabrication method were also presented.

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We fabricated a phosphor-conversion white light using an InGaN laser diode that emits 445 nm and phosphor that emit in the yellow. The InGaN laser diode was coupled to an optical fiber firstly and the phosphor was excited by the laser light output from the fiber. At 350 mA injection current the luminous flux and the luminous efficacy was 73 lm and 42.7 lm/W, respectively. The luminance was estimated to be 50 cd/mm(2). The relationship of the luminous flux and the luminous efficacy of the white light with injection current were measured and discussed.

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We solve the single mode coupled rate equations by computer, simulate the behavior of a gain switch of an AlGalnP red light semiconductor laser diode, and find the characteristic of FWHM of pulses changing with the amplitude of modulation signal, the bias current, and the modulated frequency. On this basis, we conduct experiments. The experiment results accord with the simulations well.