Highly efficient inverted top-emitting organic light-emitting diodes using a lead monoxide electron injection layer

By introducing an effective electron injection layer (EIL) material, i.e., lead monoxide (PbO), combined with the optical design in device structure, a high efficiency inverted top-emitting organic light-emitting diode (ITOLED) with saturated and quite stable colors for different viewing angles is demonstrated. The green ITOLED based on 10-(2-benzothiazolyl)-1, 1, 7, 7-tetramethyl-2, 3, 6, 7-tetrahydro-1H, 5H, 11H-[1] benzopyrano [6, 7, 8-ij] quinolizin-11-one exhibits a maximum current efficiency of 33.8 cd/A and a maximum power efficiency of 16.6 lm/W, accompanied by a nearly Lambertian distribution as well as hardly detectable color variation in the 140 forward viewing cone. A detailed analysis on the role mechanism of PbO in electron injection demonstrates that the insertion of the PbO EIL significantly reduces operational voltage, thus greatly improving the device efficiency.

Tungsten oxide doped N,N-'-di(naphthalen-1-yl)-N,N-'-diphenyl-benzidine as hole injection layer for high performance organic light-emitting diodes

By introducing tungsten oxide (WO3) doped N,N-'-di(naphthalen-1-yl)-N,N-'-diphenyl-benzidine (NPB) hole injection layer, the great improvement in device efficiency and the organic film morphology stability at high temperature were realized for organic light-emitting diodes (OLEDs). The detailed investigations on the improvement mechanism by optical, electric, and film morphology properties were presented. The experimental results clearly demonstrated that using WO3 doped NPB as the hole injection layer in OLEDs not only reduced the hole injection barrier and enhanced the transport property, leading to low operational voltage and high efficiency, but also improved organic film morphology stability, which should be related to the device stability. It could be seen that due to the utilization of WO3 doped NPB hole injection layer in NPB/tris (8-quinolinolato) aluminum (Alq(3))-based device, the maximum efficiency reached 6.1 cd A(-1) and 4.8 lm W-1, which were much higher than 4.5 cd A(-1) and 1.1 lm W-1 of NPB/Alq(3) device without hole injection layer. The device with WO3 doped NPB hole injection layer yet gave high efficiency of 6.1 cd A(-1) (2.9 lm W-1) even though the device was fabricated at substrate temperature of 80 degrees C.

A high-performance tandem white organic light-emitting diode combining highly effective white-units and their interconnection layer

By utilizing 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline:Li/MoO3 as an effective charge generation layer (CGL), we extend our recently demonstrated single-emitting-layer white organic light-emitting diode (WOLED) to realize an extremely high-efficiency tandem WOLED. This stacked device achieves maximum forward viewing current efficiency of 110.9 cd/A and external quantum efficiency of 43.3% at 1 mu A/cm(2) and emits stable white light with Commission Internationale de L'Eclairage coordinates of (0.34, 0.41) at 16 V. It is noted that the combination of effective single units and CGL is key prerequisite for realizing high-performance tandem WOLEDs.

Achieving highly efficient white organic light-emitting diodes with reduced efficiency roll-off

A highly efficient and colour-stable three-wavelength white organic light-emitting diode with the structure of indium tin oxide (ITO)/MoO3/N,N'-diphenyl-N,N'-bis (1-naphthylphenyl)-1,1'-biphenyl-4,4'-diamine (NPB)/4,4'-N,N'-dicarbazole-biphenyl (CBP): bis(2,4-diphenylquinolyl-N,C-2') iridium( acetylacetonate) (PPQ)(2)Ir(acac)/NPB/p-bis(p-N,N-diphenyl-aminostyryl)benzene (DSA-Ph):2-methyl-9,10-di(2-naphthyl) anthracene (MADN)/tris (8-hydroxyquinoline) aluminum (AlQ): 10-(2-Benzothiazolyl)-2,3,6,7-tetrahydro-1,1,7,7-tetramethyl-1H,5H,11H-(1)-benzopyropyrano(6,7-8-i,j)quinolizin-11-one (C545T)/AlQ/LiF/Al is fabricated and characterized. A current efficiency of 12.3 cdA(-1) at an illumination-relevant brightness of 1000 cd m(-2) is obtained, which rolls off slightly to 10.3 cdA(-1) at a rather high brightness of 10 000 cd m(-2). We attribute this great reduction in the efficiency roll-off to the wise management of singlet and triplet excitons between emissive layers as well as the superior charge injection and diffusion balance in the device.

Lead(IV) dioxide: an effective electron injection material to realize high-efficiency inverted top-emitting organic light-emitting diodes

Lead(IV) dioxide (PbO2) has been used as the electron injection layer (EIL) to realize high-efficiency inverted top-emitting organic light-emitting diodes (I-TOLEDs). It can be seen that the inserting of the PbO2 EIL significantly reduces operational voltage, thus greatly improving the current efficiency and power efficiency of fabricated I-TOLEDs. The 10-(2-benzothiazolyl)-1, 1, 7, 7-tetramethyl-2, 3, 6, 7-tetrahydro-1H, 5H, 11H-[1] benzopyrano [6, 7, 8-ij] quinolizin-11-one (C545T)-based I-TOLEDs with the PbO2 EIL exhibit a maximum current efficiency of 31.6 cd A(-1) and a maximum power efficiency of 14.3 lm W-1, which are both higher than 22.5 cd A(-1) and 5.4 lm W-1 of the I-TOLEDs with LiF as the EIL respectively. A detailed analysis with respect to the role mechanism of PbO2 in electron injection has been presented. The improvement in EL performance is attributed to the formation of the interfacial dipoles at the electrode interface due to charge transfer between PbO2 and Alq(3).

Simple and Efficient Near-Infrared Organic Chromophores for Light-Emitting Diodes with Single Electroluminescent Emission above 1000 nm

A series of NIR organic chromophores with donor-pi-acceptor-pi-donor structure are synthesized. Good thermal stability and strong photoluminescence in solid state render them suitable for application in light-emitting diodes. Exclusive near-infrared emission at 1080 nm with external quantum efficiency of 0.28% is obtained from the nondoped OLEDs. The longest electroluminescence wave-length is 1220 nm.

Synthesis and Application of Thiadiazoloquinoxaline-Containing Chromophores as Dopants for Efficient Near-Infrared Organic Light-Emitting Diodes

series of a donor-acceptor-donor type of near-infrared (NIR) fluorescent chromophores based on [1,2,5]thiadiazolo[3,4-g]quinoxaline (TQ) as an electron acceptor and triphenylamine as an electron donor are synthesized and characterized. By introducing pendent phenyl groups or changing the pi-conjugation length in the TQ core, we tuned tile energy levels of these chromophores, resulting in the NIR emission in a range from 784 to 868 nm. High thermal stability and glass transition temperatures allow these chromophores to be used as dopant emitters, which can be processed by vapor deposition for the fabrication of organic light-emitting diodes (OLEDs) having the multilayered structure of ITO/MoO3/NPB/Alq(3):dopant emitter/BCP/Alq(3)/LiF/Al. The electroluminescence spectra of the devices based on these new chromophores cover a range from 748 to 870 nm. With 2 wt % of dopant 1, the LED device shows an exclusive NIR emission at 752 nm with the external quantum efficiency (EQE) as high as 1.12% over a wide range of current density (e.g., around 200 mA cm(-2)).

A Novel Biodegradable and Light-Breakable Diblock Copolymer Micelle for Drug Delivery

A facile approach to the preparation of light-responsive copolymer micelles is developed. This approach is based on the attachment of hydrophobic groups to one block of a diblock copolymer via a light-sensitive linkage. The micelles can be dissociated under light irradiation and release the encapsulated pyrene. The obtained polymeric micelles are expected to be of use as drug-delivery vehicles.

Investigation on internal electric field distribution of organic light-emitting diodes (OLEDs) with Eu2O3 buffer layer

We have found that organic light-emitting diode (OLED) performance was highly improved by using europium oxide (Eu2O3) as a buffer layer on indium tin oxide (ITO) in OLEDs based on tris-(8-hydroxyquinoline) aluminium (Alq(3)), which showed low turn-on voltage, high luminance, and high electroluminescent (EL) efficiency. The thickness of Eu2O3 generally was 0.5-1.5 nm. We investigated the effects of Eu2O3 on internal electric field distributions in the device through the analysis of current-voltage characteristics, and found that the introduction of the buffer layer balanced the internal electric field distributions in hole transport layer (HTL) and electron transport layer (ETL), which should fully explain the role of the buffer layer in improving device performance. Our investigation demonstrates that the hole injection is Fowler-Nordheim (FN) tunnelling and the electron injection is Richardson-Schottky (RS) thermionic emission, which are very significant in understanding the operational mechanism and improving the performance, of OLEDs.

Sr3Al2O5Cl2:Ce3+,Eu2+: A potential tunable yellow-to-white-emitting phosphor for ultraviolet light emitting diodes

The Sr3Al2O5Cl2:Ce3+,Eu2+ phosphors were prepared by solid state reaction. The obtained phosphors exhibit a strong absorption in the UV-visible region and have two intense emission bands at 444 and 609 nm. The energy transfer from the Ce3+ to Eu2+ ions was observed, and the critical distance has been estimated to be about 24.5 A by spectral overlap method. Furthermore, the developed phosphors can generate lights from yellow-to-white region under the excitation of UV radiation by appropriately tuning the activator content, indicating that they have potential applications as an UV-convertible phosphor for white light emitting diodes.

High-pressure sintering the novel light (W0.25Al0.75)C hard material without binder phase

A novel hard material of (W0.25Al75)C has been successfully prepared by the high-pressure sintering process without the addition of any binder phase. The high-pressure is a suitable and powerful technique for sintering the binderless hard material, the relative density of the hard material can reach 99.6% under high-pressure sintering. The density of the novel light hard material is only 6.2371 g cm(-3), which is much lighter than the normal hard material. The hardness of the light hard material can reach 18.89 GPa even the aluminum content get the astonished 75%.

White light emission from Eu3+ in CaIn2O4 host lattices

CaIn2O4:xEu(3+) (x=0.5%,1.0%,1.5%) phosphors were prepared by the Pechini sol-gel process [U.S. Patent No. 3,330,697 (1967)] and characterized by x-ray diffraction and photoluminescence and cathodoluminescence spectra as well as lifetimes. Under the excitation of 397 nm ultraviolet light and low voltage electron beams, these phosphors show the emission lines of Eu3+ corresponding to D-5(0,1,2,3)-F-7(J) (J=0,1,2,3,4) transitions from 400 to 700 nm (whole visible spectral region) with comparable intensity, resulting in a white light emission with a quantum efficiency near 10%. The luminescence mechanism for Eu3+ in CaIn2O4 has been elucidated.

Efficient multilayer white polymer light-emitting diodes with aluminum cathodes

Efficient multilayer white polymer light-emitting diodes (WPLEDs) with aluminum cathodes are fabricated. The multilayer structure is composed of a water soluble hole-injection layer, a toluene-soluble emissive layer, and an alcohol-soluble emissive layer. The polarity difference of the solvents used for spin coating these polymers allows for realization of the multilayer polymer structure. The recombination zone confined at the interface of the two emissive polymers avoids exciton quenching by electrodes, and white emission is realized by harvesting photons emitted from the two emissive polymers. A maximum luminous efficiency of 16.9 cd/A and a power efficiency of 11.1 lm/W are achieved for this WPLED.

Efficient top-emitting organic light-emitting diodes with a V2O5 modified silver anode

We fabricated efficient top-emitting organic light-emitting diodes (OLEDs) with silver (Ag) as an anode and samarium (Sm) as a semi-transparent cathode. The hole-injection barrier at the Ag anode/hole transporter interface is reduced by inserting a buffer layer of vanadium oxide (V2O5) between them. The ultraviolet photoelectron spectroscopy analysis shows that the hole-injection barrier is reduced by 0.5 eV. Both the V2O5 thickness and the organic layer thickness are optimized. The optimized device achieves a maximum current efficiency of 5.46 cd A(-1) and a power efficiency of 3.90 lm W-1, respectively.

Enhancement of stability of polymer light-emitting diodes by post annealing

We investigate the effect of thermal annealing before and after cathode deposition on the stability of polymer light-emitting diodes (PLEDs) based on green fluorescent polyfluorene derivative. The annealed PLEDs exhibit improved charge transport and red-shift emission compared to the as-fabricated device. The stability of the PLEDs is largely enhanced by post-annealing before and after Ca deposition, which is attributed to the enhanced charge transport and the intimate contact between the cathode and the emissive layer.