Observation of defects in GaN epilayers

GaN epilayers grown on sapphire substrates nitridated for various lengthy periods were investigated by light scattering tomography (LST) and Raman scattering. In the LST images of the plane-view epilayers, the light scattering defects distribute in [<11(2)over bar 0>] directions. The defect density is lower in epilayer grown on substrate nitridated for a longer period. The defects are believed to be straight threading edge dislocations on {<1(1)over bar 00>} planes. The Raman shift of E-2 mode is larger in the sample grown on substrate nitridated for a longer period. Our results show that the stress is higher in the sample with fewer dislocations.

Strain effects on optical polarisation properties in (11(2)over-bar2) plane GaN films

We present the theoretical results of the electronic band structure of wurtzite GaN films under biaxial strains in the (11 (2) over bar2)-plane The calculations are performed by the kappa p perturbation theory approach through using the effective-mass Hamiltonian for an arbitrary direction The results show that the transition energies decrease with the biaxial strains changing from -0 5% to 0 5% For films of (11 (2) over bar2)-plane, the strains are expected to be anisotropic in the growth plane Such anisotropic strains give rise to valence band mixing which results in dramatic change in optical polarisation property The strain can also result in optical polarisation switching phenomena Finally, we discuss the applications of these properties to the (11 (2) over bar2) plane GaN based light emitting diode and lase diode

注入Ar+的蓝宝石晶体退火前后光致发光谱的分析

对注入Ar+后不同晶面取向的蓝宝石晶体在不同退火条件下的光致发光谱进行了分析.分析结果表明:三种晶面取向的蓝宝石样品经Ar+注入后，其光致发光谱中均出现了新的位于506nm处的发光峰；真空和空气气氛下的退火均对样品在506nm处的发光有增强作用，不同晶面取向的样品发光增强程度不同，且发光增强至最大时的退火温度也不同，空气气氛下的退火使样品发光增强程度更为显著.由此可以看出，退火气氛、退火温度和晶面取向均对样品发光峰强度有影响.

X-ray photoelectron spectroscopy study on GaN crystal irradiated by slow highly charged ions

We utilize slow highly charged ions of Xeq+ and Pbq+ to irradiate GaN crystal films grown on sapphire substrate, and use X-ray photoelectron spectroscopy to analyze its surface chemical composition and chemical state of the elements. The results show that highly charged ions can etch the sample surface obviously, and the GaN sample irradiated by highly charged ions has N depletion or is Ga rich on its surface. Besides, the relative content of Ga-Ga bond increases as the dose and charge state of the incident ions increase. In addition, the binding energy of Ga 3d(5/2) electrons corresponding to Ga-Ga bond of the irradiated GaN sample is smaller compared with that of the Ga bulk material. This can be attributed to the lattice damage, which shifts the binding energy of inner orbital electrons to the lower end.

利用惰性气体离子注入制备Au纳米颗粒/蓝宝石复合材料

在绝缘体衬底中金属纳米颗粒的制备，常采用金属离子直接注入的方法，这一方法存在的问题主要是，所形成的金属颗粒尺寸离散较大，使这类材料的应用受到了限制。惰性气体离子注入到某些材料中所形成的纳米气泡或空腔的尺寸分布较均一，且纳米空腔具有吸附金属离子的性质。在此基础上我们提出：利用惰性气体离子注入预先在材料中形成尺寸分散较小的纳米空腔埋层，然后在样品表面沉积Au膜，再尝试通过高温扩散或离子束附加辐照的方法制备Au纳米颗粒。实验结果表明，高温退火的方法未在样品内部形成Au颗粒，离子束附加辐照的方法在样品内形成了尺寸分散较小的Au纳米颗粒，这为制备尺寸分散小的金属纳米颗粒复合材料提供了借鉴和新方法。论文中用多种测试方法（PL、UV-VIS、RBS、SEM、TEM）分析讨论了Ar的注入剂量、热处理温度、样品表面取向等参量对制备Au纳米颗粒的影响，并利用M-G理论对所研究体系的光吸收性质进行了模拟计算和定性解释

DNA network structures on various solid substrates investigated by atomic force microscopy

We have fabricated DNA network structures on glass and sapphire substrates. As a comparison, we also formed the network structure on mica substrate. For titanate strontium substrate, however, DNA network can not be obtained even if it is wet-treated by Na2HPO4 solution to make it hydrophilic. We also discuss the factors that affect the DNA networks formed on various substrates.

Studies on uniaxially drawn poly(vinylidene fluoride) films

Poly(vinylidene fluoride) (PVDF), under certain conditions, shows a crystal transition between the alpha (TGT (G) over bar) and beta (TTT) forms, where T, G, and (G) over bar, respectively, denote trans, gauche, and minus gauche. We investigated the mechanism of this crystal transition by FT-TR and X-ray diffraction, which yielded consistent results. We also carried out differential scanning calorimeter experiments.