302 resultados para Galaxy evolution


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Single-crystalline spinel (MgAl2O4) specimens were implanted with helium ions of 100 keV at three successively increasing fluences of (0.5, 2.0 and 8.0) x 10(16) ions/cm(2) at room temperature. The specimens were subsequently annealed in vacuum at different temperatures ranging from 500 to 1100 degrees C. Different techniques, including Fourier transformed infrared spectroscopy (FTIR), thermal desorption spectrometry (TDS), atomic force microscopy (AFM) and scanning electron microscopy (SEM) were used to investigate the specimens, It was found that the absorbance peak in the FTIR due to the stretching vibration of the Al-O bond shifts to smaller wave numbers with increasing fluence, shifting back to larger wave numbers with an increase of annealing temperature. The absorbance peak shift has a linear relationship with the fluence increase in the as-implanted state, while it does not have a linear relationship with the fluence increase after the annealing process. Surface deformation occurred in the specimens implanted with fluences of 2.0 and 8.0 x 10(16) ions/cm(2) in the annealing process. The phenomena described above can be attributed to differences in defect formation in the specimens. (C) 2008 Elsevier B.V. All rights reserved.

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In this paper, the evolution of the pattern transition induced by the vortical electric field (VEF) is investigated. Firstly, a scheme is suggested to generate the VEF by changing the spatial magnetic field. Secondly, the VEF is imposed on the whole medium, and the evolutions of the spiral wave and the spatiotemporal chaos are investigated by using the numerical simulation. The result confirms that the drift and the breakup of the spiral wave and the new net-like pattern are observed when different polarized fields are imposed on the whole medium respectively. Finally, the pattern transition induced by the polarized field is discussed theoretically.

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In the present work p-type Si specimens were implanted with Cl ions of 100 keV to successively increasing fluences of 1 x 10(15), 5 x 10(15), 1 x 10(16) and 5 x 10(16) ions cm(-2) and subsequently annealed at 1073 K for 30 min. The microstructure was investigated with the transmission electron microscopy (TEM) in both the plane-view and the cross-sectional view. The implanted layer was amorphized after chlorine implantation even at the lowest ion fluence, while re-crystallization of the implanted layer occurs on subsequent annealing at 1073 K. In the annealed specimens implanted above the lowest fluence three layers along depth with different microstructures were found, which include a shallow polycrystalline porous layer, a deeper single-crystalline layer containing high density of gas bubbles, a well separated deeper layer composed of dislocation loops in low density. With increasing ion fluence the thickness of the porous polycrystalline layer increases. It is indicated that chlorine can suppress the epitaxial re-crystallization of implanted silicon, when the implant fluence of Cl ions exceeds a certain level.

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The proton-neutron interaction in determining the evolution of nuclear structure has been studied by using the Brillouin-Wigner perturbation expansion. The particle-hole and particle-particle p-n interactions are unifiedly described in the theory. The obtained formulas of level energies and excitation energies scaled in the small- and large-NpNn limits can well explain the linearity of the extracted proton-neutron interaction energies and the attenuation of the 2(1)(+) excitation energies against the valence nucleon product NpNn for five mass regions from A = 100-200.

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High-spin states in Pd-101 have been investigated experimentally via the Ge-76(Si-28, 3n gamma)Pd-101 reaction. The previously known bands based on the d(5/2) and h(11/2) neutron orbitals have been extended to higher-spin states, and two new structures have been observed. Spin and parity were assigned to the levels on the basis of the experimental results of the angular distribution of gamma rays deexciting the oriented states. For the ground-state band, the E-GOS (E-Gamma Over Spin) curve strongly suggests a structure transition from vibration to rotation while increasing spin.