Search for signature inversion in the pi i(13/2) circle times upsilon i1(3/2) bands in Au-182,Au-184,Au-186

Search for low-spin signature inversion in the pi i(13/2) circle times nu i(13/2) bands in odd-odd Au-182,Au-184,Au-186 has been conducted through the standard in-beam gamma-spectroscopy techniques. The experiments for Au-182 and 186Au have been performed in the Japan Atomic Energy Agency (JAEA) via the Sm-152(Cl-35,5n)Au-182 and Yb-172(F-19,5n)Au-186 reactions, respectively. A study of Au-184 has been made using a multi-detector array GASP in LNL, Italy, via the Tb-159(Si-29,4n)Au-184 reaction. The pi i(13/2) circle times nu i(13/2) bands in these three nuclei have been identified and extended up to high-spin states. In particular, the inter-band connection between the pi i(13/2) nu i(13/2) band and the ground-state band in 184 Au has been established, leading to a firm spin-and-parity assignment for the pi i(13/2) circle times nu i(13/2) band. The low-spin signature inversion is found in the pi i(13/2) circle times nu i(13/2) bands in Au-182,Au-184,Au-186 according to our spin-assignment and the signature crossing observed at high-spin states.

Search for signature inversion in the pi i(13/2)circle times nu i(13/2) bands in Au-182,Au-184,Au-186

Search for low-spin signature inversion in the pi i(13/2) circle times nu i(13/2) bands in odd-odd Au-182,Au-184,Au-186 has been conducted through the standard in-beam gamma-spectroscopy techniques via the Sm-152(Cl-35,5n) Au-182, Yb-172(F-19,5n) (186)An, and Tb-159(Si-29,4n) (184)An reactions, respectively. The pi i(13/2) circle times nu i(13/2) bands in these three nuclei have been identified and extended up to high-spin states. In particular, the inter-band connection between the pi i(13/2) circle times nu i(13/2) band and the ground-state band in Au-184 has been established, leading to a firm spin-and-parity assignment for the pi i(13/2) circle times nu i(13/2) band. The low-spin signature inversion is found in the pi i(13/2) circle times nu i(13/2) bands according to our spin-assignment and-the signature crossing observed at high-spin states.

Low-spin signature inversion in the pi h(9/2)circle times nu i(13/2) oblate band

Excited states in Tl-188,Tl-190 have been studied experimentally by means of in-beam gamma spectroscopy techniques, and resulted in the identification of a strongly coupled band based on the pi h(9/2) circle times nu i(13/2) configuration with oblate deformation. The oblate band in doubly odd Tl nuclei shows low-spin signature inversion. It is the first experimental observation of low-spin signature inversion for a band associated with the oblate pi h(9/2) circle times nu i(13/2) configuration.

Observation of a pi h(9/2) circle times nu i(13/2) oblate band in Tl-188

Excited states in Tl-188 have been studied experimentally using the Gd-157(Cl-35;4n) reaction at a beam energy of 170 MeV. A rotational band built on the pi h(9/2) x nu i(13/2) configuration with oblate deformation has been established for Tl-188. Based on the structure systematics of the oblate pi h(9/2) x nu i(13/2) bands in the heavier odd-odd Tl nuclei, we have tentatively proposed spin values for the new band in Tl-188. The pi h(9/2) x nu i(13/2) oblate band in Tl-188 shows low-spin signature inversion, and it can be interpreted qualitatively by the two-quasiparticle plus rotor model including a J-dependent p-n residual interaction.

Properties of the pi h(9/2)circle times nu i(13/2) oblate band in Tl-188

High spin states in Tl-188 have been investigated via the Gd-157(Cl-35,4n) reaction at beam energy of 170 MeV. A rotational band built on the pi h(9/2) circle times nu(13/2) configuration with oblate deformation has been established. Considering the similarity between the band structure observed in odd-odd Tl nuclei, spin values have been tentatively proposed for the new band in Tl-188. The pi h(9/2) circle times nu(13/2) oblate band in Tl-188 shows low-spin signature inversion, and it can be interpreted qualitatively by the two quasiparticle plus rotor model including a J-dependent p-n residual interaction.

Signature inversion in pi h(9/2) circle times nu i(13/2) oblate band of Tl-188

High-spin Level structure of Tl-188 has been studied via Gd-157 (Cl-35,4n) fusion-evaporation reaction at beam energy of 170MeV. A rotational band built on the pi h(9/2) circle times nu i(13/2) configuration with oblate deformation has been established. Spin values have been proposed to the pi h(9/2) circle times nu i(13/2) oblate band based on the similarities between the oblate band of Tl-188 and those in odd-odd Tl190-200. With the spin assignments, the low-spin signature inversion has been revealed for the pi h(9/2) circle times nu i(13/2) oblate band of Tl-188. The low-spin signature inversion can be interpreted qualitatively in the framework of the quasi-particles plus rotor model including a J dependent p-n residual interaction.

Realization of write-once-read-many-times memory devices based on poly(N-vinylcarbazole) by thermally annealing

A nonvolatile write-once-read-many-time (WORM-time) memory device based on poly(N-vinylcarbazole) (PVK) films was realized by thermally annealing. The device can be fabricated using a simple spin coat method. It was found that the control of PVK film surface morphology by thermally annealing plays an important role in achieving the WORM memory properties. The memory device showed an ON/OFF current ratio as high as 10(4) and the retention time was over 2000 s without degradation.

The morphology control of pentacene for write-once-read-many-times memory devices

We realized write-once-read-many-times (WORM) memory devices based on pentacene and demonstrated that the morphology control of the vacuum deposited pentacene thin film is greatly important for achieving the unique nonvolatile memory properties. The resulted memory devices show a high ON/OFF current ratio (10(4)), long retention time (over 12 h), and good storage stability (over 240 h). The reduction of the barrier height caused by a large interface dipole and the damage of the interface dipole under a critical bias voltage have been used to explain the transition processes.

Write-Once Read-Many-Times Memory Based on a Single Layer of Pentacene

We realized an organic electrical memory device with a simple structure based on single-layer pentacene film embedded between Al and ITO electrodes. The optimization of the thickness and deposition rate of pentacene resulted in a reliable device with an on/off current ratio as high as nearly 10(6), which was two orders of magnitude higher than previous results, and the storage time was more than 576 h. The current transition process is attributed to the formation and damage of the Interface dipole at different electric fields, in which the current conduction showed a transition from ohmic conductive current to Fowler-Nordheim tunneling current. After the transition from ON- to OFF-state, the device tended to remain in the OFF-State even when the applied voltage was removed, which indicated that the device was very promising for write-once read-many-times memory.