82 resultados para ultrastructural localization
Resumo:
Adiabatic shear localization is a mode of failure that occurs in dynamic loading. It is characterized by thermal softening occurring over a very narrow region of a material and is usually a precursor to ductile fracture and catastrophic failure. This reference source is the first detailed study of the mechanics and modes of adiabatic shear localization in solids, and provides a systematic description of a number of aspects of adiabatic shear banding. The inclusion of the appendices which provide a quick reference section and a comprehensive collection of thermomechanical data allows rapid access and understanding of the subject and its phenomena. The concepts and techniques described in this work can usefully be applied to solve a multitude of problems encountered by those investigating fracture and damage in materials, impact dynamics, metal working and other areas. This reference book has come about in response to the pressing demand of mechanical and metallurgical engineers for a high quality summary of the knowledge gained over the last twenty years. While fulfilling this requirement, the book is also of great interest to academics and researchers into materials performance.Table of Contents
| 1 | Introduction | 1 |
| 1.1 | What is an Adiabatic Shear Band? | 1 |
| 1.2 | The Importance of Adiabatic Shear Bands | 6 |
| 1.3 | Where Adiabatic Shear Bands Occur | 10 |
| 1.4 | Historical Aspects of Shear Bands | 11 |
| 1.5 | Adiabatic Shear Bands and Fracture Maps | 14 |
| 1.6 | Scope of the Book | 20 |
| 2 | Characteristic Aspects of Adiabatic Shear Bands | 24 |
| 2.1 | General Features | 24 |
| 2.2 | Deformed Bands | 27 |
| 2.3 | Transformed Bands | 28 |
| 2.4 | Variables Relevant to Adiabatic Shear Banding | 35 |
| 2.5 | Adiabatic Shear Bands in Non-Metals | 44 |
| 3 | Fracture and Damage Related to Adiabatic Shear Bands | 54 |
| 3.1 | Adiabatic Shear Band Induced Fracture | 54 |
| 3.2 | Microscopic Damage in Adiabatic Shear Bands | 57 |
| 3.3 | Metallurgical Implications | 69 |
| 3.4 | Effects of Stress State | 73 |
| 4 | Testing Methods | 76 |
| 4.1 | General Requirements and Remarks | 76 |
| 4.2 | Dynamic Torsion Tests | 80 |
| 4.3 | Dynamic Compression Tests | 91 |
| 4.4 | Contained Cylinder Tests | 95 |
| 4.5 | Transient Measurements | 98 |
| 5 | Constitutive Equations | 104 |
| 5.1 | Effect of Strain Rate on Stress-Strain Behaviour | 104 |
| 5.2 | Strain-Rate History Effects | 110 |
| 5.3 | Effect of Temperature on Stress-Strain Behaviour | 114 |
| 5.4 | Constitutive Equations for Non-Metals | 124 |
| 6 | Occurrence of Adiabatic Shear Bands | 125 |
| 6.1 | Empirical Criteria | 125 |
| 6.2 | One-Dimensional Equations and Linear Instability Analysis | 134 |
| 6.3 | Localization Analysis | 140 |
| 6.4 | Experimental Verification | 146 |
| 7 | Formation and Evolution of Shear Bands | 155 |
| 7.1 | Post-Instability Phenomena | 156 |
| 7.2 | Scaling and Approximations | 162 |
| 7.3 | Wave Trapping and Viscous Dissipation | 167 |
| 7.4 | The Intermediate Stage and the Formation of Adiabatic Shear Bands | 171 |
| 7.5 | Late Stage Behaviour and Post-Mortem Morphology | 179 |
| 7.6 | Adiabatic Shear Bands in Multi-Dimensional Stress States | 187 |
| 8 | Numerical Studies of Adiabatic Shear Bands | 194 |
| 8.1 | Objects, Problems and Techniques Involved in Numerical Simulations | 194 |
| 8.2 | One-Dimensional Simulation of Adiabatic Shear Banding | 199 |
| 8.3 | Simulation with Adaptive Finite Element Methods | 213 |
| 8.4 | Adiabatic Shear Bands in the Plane Strain Stress State | 218 |
| 9 | Selected Topics in Impact Dynamics | 229 |
| 9.1 | Planar Impact | 230 |
| 9.2 | Fragmentation | 237 |
| 9.3 | Penetration | 244 |
| 9.4 | Erosion | 255 |
| 9.5 | Ignition of Explosives | 261 |
| 9.6 | Explosive Welding | 268 |
| 10 | Selected Topics in Metalworking | 273 |
| 10.1 | Classification of Processes | 273 |
| 10.2 | Upsetting | 276 |
| 10.3 | Metalcutting | 286 |
| 10.4 | Blanking | 293 |
| Appendices | 297 | |
| A | Quick Reference | 298 |
| B | Specific Heat and Thermal Conductivity | 301 |
| C | Thermal Softening and Related Temperature Dependence | 312 |
| D | Materials Showing Adiabatic Shear Bands | 335 |
| E | Specification of Selected Materials Showing Adiabatic Shear Bands | 341 |
| F | Conversion Factors | 357 |
| References | 358 | |
| Author Index | 369 | |
| Subject Index | 375 |
Resumo:
We propose an atom localization scheme for a tripod-type atom making use of the sharp absorption peak resulting from interacting double-dark resonances. It is demonstrated that the probability of finding the atom at a particular position, as well as the localization precision, can be dramatically enhanced. The probability can be doubled by adjusting the Rabi frequency of the control field to the maximum Rabi frequency of the standing-wave field. Moreover, much better spatial resolution can be achieved for smaller detunings of the control and the standing-wave fields. (c) 2006 Optical Society of America.
Resumo:
In the present study, single-molecule fluorescence microscopy was used to examine the characteristics of plasma membrane targeting and microdomain localization of enhanced yellow fluorescent protein (eYFP)-tagged wild-type Dok5 and its variants in living Chinese hamster ovary (CHO) cells. We found that Dok5 can target constitutively to the plasma membrane, and the PH domain is essential for this process. Furthermore, single-molecule trajectories analysis revealed that Dok5 can constitutively partition into microdomain on the plasma membrane. Finally, the potential mechanism of microdomain localization of Dok5 was discussed. This study provided insights into the characteristics of plasma membrane targeting and microdomain localization of Dok5 in living CHO cells. (C) 2008 Elsevier B.V. All rights reserved.
Resumo:
We propose a scheme for sub-half-wavelength atom localization in a four-level ladder-type atomic system, which is coupled by two classical standing-wave fields. We find that one of the standing-wave fields can help in enhancing the localization precision, and the other is of crucial importance in increasing the detecting probability and leading sub-half-wavelength localization.
Resumo:
We propose an atom localization scheme for a four-level alkaline earth atom via a classical standing-wave field, and give the analytical expressions of the localization peak positions as well as the widths versus the parameters of the optical fields. We show that the probability of finding the atom at a particular position can be increased from 1/4 to 1/3 or 1/2 by adjusting the detuning of the probe field and the Rabi frequencies of the optical fields. Furthermore, the localization precision can be dramatically enhanced by increasing the intensity of the standing-wave field or decreasing the detuning of the probe field. The analytical results are quite accordant to the numerical solutions.
Resumo:
The behaviour of the Lambda-system has been studied theoretically in the context of atom localization. In addition to the probe field and the standing wave driving field, a microwave field is introduced to couple the two lower states, and as a result our Lambda-system forms a closed loop. Therefore phase-sensitive atom localization is expected. Indeed by appropriate choice of the relative phase between three fields, an improvement by a factor of 2 has been found in the detection probability of atoms within the sub-wavelength domain of the standing wave. The effect of other parameters is also investigated.
Resumo:
A scheme of atom localization based on the interference of resonance of double-dark states is proposed, in which the atom interacts with a classical standing-wave field. It is found that the localization property is significantly improved due to the interaction of double-dark resonances. It is realized that the atom is localized just at the nodes of the standing-wave field with higher precision. Moreover, an improvement by a factor of 2 in the detecting probability of a single atom within the subwavelength domain can be achieved by adjusting the probe-field detuning. This scheme shows more advantages than other schemes of atom localization.
