Microstructure of the crystals generated in borate glass irradiated by femtosecond laser pulses

In this study, we examined the microstructure of crystals generated in borate glass by femtosecond laser irradiation (FSLI). The distribution of the high-temperature and low-temperature phases of barium metaborate crystals produced in the borate glass is analyzed using Raman spectroscopy. We then propose the possible mechanism for the generation of crystals in glass by FSLI.

Growth of beta barium borate (beta-BaB2O4) thin films on alpha barium borate (alpha-BaB2O4) substrates

Crystalline beta-BBO thin films have been successfully prepared on (001)-oriented Sr2+-doped alpha-BBO substrates using liquid phase epitaxy and pulsed laser deposition techniques. The films were characterized by X-ray diffraction and X-ray rocking curve (XRC). The present results manifest that the beta-BBO thin films grown on Sr2+-doped alpha-BBO substrates have larger degree of orientation f-value and smaller XRC FWHM than the ones grown on other reported substrates. Compared with other substrates, alpha-BBO has the same UV cutoff and the similar structure to beta-BBO. These results reveal that alpha-BBO single crystal may be a promising substrate proper to the growth of beta-BBO films. (c) 2005 Elsevier B.V. All rights reserved.

Infrared broadband emission of bismuth-doped barium-aluminum-borate glasses

We report near infrared broadband emission of bismuth-doped barium-aluminum-borate glasses. The broadband emission covers 1.3 mum window in optical telecommunication systems. And it possesses wide full width at half maximum (FWHM) of similar to 200nm and long lifetime as long as 350 mus. The luminescent properties are quite sensitive to glass compositions and excitation wavelengths. Based on energy matching conditions, we suggest that the infrared emission may be ascribed to P-3(1) --> P-3(0) transition of Bi+. The broad infrared emission characteristics of this material indicate that it might be a promising candidate for broadband optical fiber amplifiers and tunable lasers. (C) 2005 Optical Society of America.

Preparation of crystalline beta barium borate thin films on Sr2+-doped alpha barium borate substrates by liquid phase epitaxy

Thin films of beta barium borate have been prepared by liquid phase epitaxy on Si2+-doped alpha-BaB2O4 (alpha-BBO, the high temperature phase of barium berate) (001) and (110) substrates. The results of X-ray diffraction indicate that the films show highly (001) preferred orientation on (001)-oriented substrates while the films grown on (110) substrates are textured with (140) orientation. The crystallinity of these films was found to depend on growth temperature, rotation rate, dip time and orientation of substrate. Growth conditions were optimized to grow films with (001) orientation on (001) substrates reproducibly. The films show second harmonic generation of 400 nm light upon irradiation with 800 nm Ti: Sapphire femtosecond laser light. (c) 2005 Elsevier B.V. All rights reserved.

Thermal stress-induced birefringence in borate glass irradiated by femtosecond laser pulses

Thermal stress-induced birefringence in borate glass which has been irradiated by 800-nm femtosecond laser pulses is observed under cross-polarized light. Due to the high temperature and pressure formed in the focal volume, the material at the edge of the micro-modified region is compressed between the expanding region and the unheated one, then stress emerges. Raman spectroscopy is used to investigate the stress distribution in the micro-modified region and indicates the redistributions of density and refractive index by Raman peak shift. We suggest that this technique can develop waveguide polarizers and Fresnel zone plates in integrated optics.

Defects in LPE-grown beta-barium borate (beta-BaB2O4) thin films

Morphological defects in beta-barium borate (beta-BBO) thin films grown on Sr2+ -doped alpha-BBO substrates by liquid phase epitaxy (LPE) technique were studied by scanning electron micrograph (SEM), atomic force microscopy (AFM) and optical spectroscopy. The present results indicate that the main defects exit in beta-BBO thin films are microcracks and hollow structure. The formation of microcrack is due to the lattice mismatch and the difference of thermal expansion coefficients between substrate and film. The hollow structure might be caused during the combination of islands, which formed in the initial stage. (C) 2006 Elsevier GmbH. All rights reserved.

噻吩胺基稀土配合物的合成、表征

本论文共合成了两种类型12个稀土金属配合物和一个硅化合物,分别对它们进行了红外、核磁等表征，对其中的9个配合物进行了晶体结构的测定。考察了配体结构和反应条件对所生成的配合物结构的影响，研究了稀土单烷基配合物的反应性，以及稀土双烷基配合物在烷基铝和有机硼盐的共同作用下对丁二烯聚合的催化活性和选择性。主要工作内容和结论如下： (1) 合成了噻吩苯胺配体(HL1)，该配体与(Lu，Y)稀土三烷基化合物反应，通过C–H活化和烷基消除反应制备了稀土(Lu，Y)单烷基配合物1和2，配体以少见的C，N模式配位，S原子并不参与配位。配体(HL1)与Sc三烷基化合物反应制备了配体分别以C, N和N, S配位的双配的Sc配合物5。 (2) 通过改变反应时间和溶剂体系，HL1与稀土钇三烷基化合物反应可得到罕见的由稀土烷基化物和胺化物两部分组成的配合物3，它们通过噻吩环上活化的C原子连接在一起。HL1和Lu(CH2SiMe3)2(THF)2LiCH2SiMe3在甲苯和正己烷溶剂中反应可得到以L12Lu(CH2SiMe3)2为阴离子，Li(THF)4为阳离子的离子对4。 (3) 研究配合物1和2的反应性。1和2与过量的PhSiH3反应得到中心金属与Si元素交换的Si化合物。 (4) 合成了噻吩苯基膦胺配体(HL2-4)和苯基膦胺配体(HL5)配体。HL2-5与稀土(Y, Lu和Sc)三烷基化合物反应制备了稀土双烷基配合物6，7，8，9，10，11和12。进一步研究了稀土金属双烷基配合物6–12对丁二烯的催化特性，发现该系列催化剂具有独特的催化性质，能够催化丁二烯高反1，4-聚合（91.3%），得到的聚合物分子量在1到2万之间，分子量分布较窄(1.4–1.6)。 (5) 研究了金属钇(Y)，镥(Lu)，钪(Sc)三种中心金属对丁二烯聚合活性和反式1，4选择性的影响，发现催化剂对丁二烯聚合活性和反1，4选择性取决于配合物的中心金属原子，其中选择性最高为钪配合物，催化活性最佳的为钇配合物。 (6) 研究了配体HL2-4的N-芳环上的取代基分别为甲基，乙基，异丙基时催化体系对丁二烯反式1，4聚合活性和选择性的影响，发现随着N-芳环上取代基空间位阻的增大，催化剂活性逐渐下降，选择性逐渐增加，但当其取代基为异丙基时，过大的空间位阻导致活性和选择性同时有明显的下降。我们通过改变噻吩基为苯基，比较了相同聚合条件下含噻吩基的稀土双烷基配合物和含苯基的稀土双烷基配合物对丁二烯聚合活性和选择性的影响，发现噻吩环的存在对催化剂的活性和选择性有较大的影响。 (7) 在相同催化剂条件下，研究了不同聚合条件(不同类型的AlR3，不同类型的Borate，Al/Ln比等)对丁二烯反1，4聚合活性和选择性的影响。 我们发现，在AlR3和Borate这两种影响因素中，以烷基铝的类型对催化剂催化活性和选择性的影响最大，而有机硼盐的影响则比较轻微，其中以烷基铝为AliBu3，Borate为[B(C6F5)4][Me2NHPh]时，反1，4选择性为最佳。Al/Ln增大并不能够显著增加催化剂的活性，对选择性的影响也并不明显，相反，随着铝比的增加，聚合过程中的链转移增加，导致分子量下降，对于该系列稀土烷基催化剂，最佳Ln/Al 为10。