A phenomenological study of the structural relaxation of an inorganic glass (Li(2)O2SiO(2))

The structural relaxation process of an inorganic glass (Li(2)O2SiO(2)) has been studied by differential scanning calorimetry. The sample is subjected to different thermal ageing histories with isothermal stages at an ageing temperature of T-g - 30 degrees C for different ageing times and at an ageing time of 16 h for different ageing temperatures. A four-parameter Tool-Narayanaswamy-Moynihan (TNM) model, is applied to simulate the normalized specific-heat curves measured. The ageing-temperature and ageing-time dependence of the structural relaxation parameters in the TNM model is obtained. (C) 1998 Elsevier Science S.A. All rights reserved.

Isothermal melt and cold crystallization kinetics of poly(aryl ether ether ketone ketone) (PEEKK)

Isothermal melt and cold crystallization kinetics of PEEKK have been investigated by differential scanning calorimetry in two temperature regions. During the primary crystallization process, the relative crystallinity develops with a time dependence described by the Avrami equation, with exponent n = 2 for both melt and cold crystallization. The activation energies are -544.5 and 466.7 kJ/mol for crystallization from the melt and amorphous glassy state, respectively. The equilibrium melting point T-m(o) is estimated to be 371 degrees C by using the Hoffman-Weeks approach. The lateral and end surface free energies derived from the Lauritzen-Hoffman spherulitic growth rate equation are sigma=10 erg/cm(2) and sigma(e) = 60 erg/cm(2), respectively. The work of chain folding q is determined as 3.98 kcal/mol. These observed crystallization kinetic characteristics of PEEKK are compared with those of PEEK. (C) 1997 Elsevier Science Ltd.

太阳活动变化对中低纬电离层的影响

With the variations of solar activity, solar EUV and X-ray radiations change over different timescales (e.g., from solar cycle variation to solar flare burst). Since solar EUV and X-ray radiations are the primary energy sources for the ionosphere, theirs variations undoubtedly produce significant and complicated effects on the ionosphere. So the variations of solar activity significantly affect the ionosphere. It is essential for both ionospheric theory and applications to study solar activity effects on the ionosphere. The study about solar activity variations of the ionosphere is an important part of the ionospheric climatology. It can enhance the understanding for the basic processes in the ionosphere, ionospheric structure and its change, ionosphere/thermosphere coupling, and so on. As for applications, people need sufficient knowledges about solar activity variations of the ionosphere in order to improve ionospheric models so that more accurate forecast for the ionospheric environments can be made. Presently, the whole image about the modalities of ionospheric solar activity variations is still unknown, and related mechanisms still cannot be well understood. This paper is about the effects of the 11-year change in solar activity to the low- and mid-latitude ionosphere. We use multi-type ionospheric observations and model to investigate solar activity effects on the electron density and ionospheric spatial structure, and we focus on discussing some related mechanisms. The main works are as follows: Firstly, solar activity variations of ionospheric peak electron density (NmF2) around 1400 LT were investigated using ionosonde observations in the 120°E sector. The result shows that the variation trend of NmF2 with F107 depends on latitudes and seasons. There is obvious saturation trend in low latitudes in all seasons; while in middle latitudes, NmF2 increases linearly with F107 in winter but saturates with F107 at higher solar activity levels in the other seasons. We calculated the photochemical equilibrium electron density to discuss the effects induced by the changes of neutral atmosphere and dynamics processes on the solar activity variations of NmF2. We found that: (1) Seasonal variation of neutral atmosphere plays an important role in the seasonal difference of the solar activity variations of NmF2 in middle latitudes. (2) Less [O]/[N2] and higher neutral temperature are important for the saturation effect in summer, and the increase of vibrational excited N2 is also important for the saturation effect. (3) Dynamics processes can significantly weaken the increase of NmF2 when solar activity enhances, which is also a necessary factor for the saturation effect. Secondly, solar activity variations of nighttime NmF2 were investigated using ionosonde observations in the 120°E sector. The result shows that the variation trends of NmF2 with F107 in nighttime are different from that in daytime in some cases, and the nighttime variation trends depend on seasons. There is linear increase trend in equinox nighttime, and saturation trend in summer nighttime, while the increase rate of NmF2 with F107 increases when solar activity enhances in winter nighttime (we term it with “amplification trend”). We discussed the possible mechanisms which affect the solar activity variations of nighttime NmF2. The primary conclusions are as follows: (1) In the equatorial ionization anomaly (EIA) crest region, the plasma influx induced by the pre-reversal enhancement (PRE) results in the change of the variation trend between NmF2 and F107 from “saturation” to “linear” after sunset in equinoxes and winter; while the recombination process at the F2-peak is the primary factor that affects the variation trend of NmF2 with F107 in middle latitudes. (2) The recombination coefficient at the F2-peak height reaches its maximum at moderate solar activity level in winter nighttime, which induces NmF2 attenuates more quickly at moderate solar activity level. This is the main reason for the amplification trend. (3) The change of the recombination process at the F2-peak with solar activity depends on the increases of neutral parameters (temperature, density et al.) and the F2-peak height (hmF2). The seasonal differences in the changes of neutral atmosphere and hmF2 with solar activity are the primary reasons for the seasonal difference in the variation trend of nighttime NmF2 with F107. Finally, we investigated the solar activity dependence of the topside ionosphere in low latitudes using ROCSAT-1 satellite (at 600 km altitude) observations. The primary results and conclusions are as follows: (1) Latitudinal distribution of the plasma density is local time, seasonal, and solar activity dependent. In daytime, there is a plasma density peak at the dip equator. The peak is obviously enhanced at high solar activity level, and the strength of the peak strongly depends on seasons. While at sunset, two profound plasma density peaks (double-peak structure) are found in solar maximum equinox months. (2) Local time dependence of the latitudinal distribution is due to the local time variation of the equatorial dynamics processes. Double-peak structure is attributed to the fountain effect induced by strong PRE. Daytime peak enhances with solar activity since the plasma density increases with solar activity more strongly at the dip equator due to the equatorial vertical drift, and its seasonal dependence is mainly due to the seasonal variations of neutral density and the equatorial vertical drift. In the sunset sector, seasonal and solar activity dependences of the latitudinal distribution are related to the seasonal and solar activity variations of PRE. (3) The variation trend of the plasma density with solar activity shows local time, seasonal, and latitudinal differences. That is different from the changeless amplification trend at the DMSP altitude (840 km). Profound saturation effect is found in the dip equator region at equinox sunset. This saturation effect in the topside ionosphere is realated to the increase of PRE with solar activity. Solar activity variation trend of the topside plasma density was discussed quantitatively by Chapman-α function. The result shows that the effect induced by the change of the scale height is dominant at high altitudes; while the variation trend of ROCSAT-1 plasma density with solar activity is suggested to be related to the changes of the peak height, the scale height, and the peak electron density with solar activity.

Reaction path for oxidation of ethylene to acetic acid over Pd/WO3-ZrO2 in the presence of water

Pd-supported on WO3-ZrO2 (W/Zr atomic ratio=0.2) calcined at 1073 K was found to be highly active and selective for gas-phase oxidation of ethylene to acetic acid in the presence of water at 423 K and 0.6 MPa. Contact time dependence demonstrated that acetic acid is formed via acetaldehyde formed by a Wacker-type reaction, not through ethanol by hydration of ethylene.

Abnormal energy dependence of photoluminescence decay time in InGaN epilayer

We employ photoluminescence (PL) and time-resolved PL to study exciton localization effect in InGaN epilayers. By measuring the exciton decay time as a, function of the monitored emission energy at different temperatures, we have found unusual behaviour of the energy dependence in the PL decay process. At low temperature, the measured PL decay time increases with the emission energy. It decreases with the emission energy at 200K, and remains nearly constant at the intermediate temperature of 120K. We have studied the dot size effect on the radiative recombination time by calculating the temperature dependence of the exciton recombination lifetime in quantum dots, and have found that the observed behaviour can be well correlated to the exciton localization in quantum dots. This suggestion is further supported by steady state PL results.

Subband separation energy dependence of intersubband relaxation time in wide quantum wells

Subband separation energy dependence of intersubband relaxation time in a wide quantum well (250 Angstrom) was studied by steady-state and time-resolved photoluminescence. By applying a perpendicular electrical field, the subband separation energy in the quantum well is continuously tuned from 21 to 40 meV. As a result, it is found that the intersubband relaxation time undergoes a drastic change from several hundred picoseconds to subpicoseconds. It is also found that the intersubband relaxation has already become very fast before the energy separation really reaches one optical phonon energy. (C) 1997 American Institute of Physics.

Temperature dependence of the distribution of the first passage time: Results from discontinuous molecular dynamics simulations of an all-atom model of the second beta-hairpin fragment of protein G

More than 22 000 folding kinetic simulations were performed to study the temperature dependence of the distribution of first passage time (FPT) for the folding of an all-atom Go-like model of the second beta-hairpin fragment of protein G. We find that the mean FPT (MFPT) for folding has a U (or V)-shaped dependence on the temperature with a minimum at a characteristic optimal folding temperature T-opt*. The optimal folding temperature T-opt* is located between the thermodynamic folding transition temperature and the solidification temperature based on the Lindemann criterion for the solid. Both the T-opt* and the MFPT decrease when the energy bias gap against nonnative contacts increases. The high-order moments are nearly constant when the temperature is higher than T-opt* and start to diverge when the temperature is lower than T-opt*. The distribution of FPT is close to a log-normal-like distribution at T* greater than or equal to T-opt*. At even lower temperatures, the distribution starts to develop long power-law-like tails, indicating the non-self-averaging intermittent behavior of the folding dynamics. It is demonstrated that the distribution of FPT can also be calculated reliably from the derivative of the fraction not folded (or fraction folded), a measurable quantity by routine ensemble-averaged experimental techniques at dilute protein concentrations.

The origin of the transverse relaxation time in optically excited semiconductor quantum wells

The origin of the transverse relaxation time in optically excited semiconductor quantum wells is investigated based on the vector property of the interband transition matrix elements. The dephasing rate due to carrier-carrier (CC) scattering is found to be equal to half of the common momentum relaxation rate. The analytical expression of the polarization dephasing due to CC scattering in two-dimension is established and the dependence of the dephasing rate Gamma(cc) on the carrier density N is determined to be Gamma(cc) = constant (.) N-1/2, which is used to explain the experimental results and provides a promising physical picture. (C) 2004 Elsevier B.V. All rights reserved.

Detection of Brillouin scattering temperature signal in Brillouin optical time-domain reflectometer sensing system based on instantaneous frequency measurement technology

We present a simple and practical method for the single-ended distributed fiber temperature measurements using microwave (11-GHz) coherent detection and the instantaneous frequency measurement (IFM) technique to detect spontaneous Brillouin backscattered signal in which a specially designed rf bandpass filter at 11 GHz is used as a frequency discriminator to transform frequency shift to intensity fluctuation. A Brillouin temperature signal can be obtained at 11 GHz over a sensing length of 10 km. The power sensitivity dependence on temperature induced by frequency shift is measured as 2.66%/K. (c) 2007 Society of Photo-Optical Instrumentation Engineers.

Detection of Brillouin scattering temperature signal in Brillouin optical time-domain reflectometer sensing system based on instantaneous frequency measurement technology

abstract {We present a simple and practical method for the single-ended distributed fiber temperature measurements using microwave (11-GHz) coherent detection and the instantaneous frequency measurement (IFM) technique to detect spontaneous Brillouin backscattered signal in which a specially designed rf bandpass filter at 11 GHz is used as a frequency discriminator to transform frequency shift to intensity fluctuation. A Brillouin temperature signal can be obtained at 11 GHz over a sensing length of 10 km. The power sensitivity dependence on temperature induced by frequency shift is measured as 2.66%/K. © 2007 Society of Photo-Optical Instrumentation Engineers.}

Temperature dependence of hole spin relaxation in ultrathin InAs monolayers

The temperature dependence of hole spin relaxation time in both neutral and n-doped ultrathin InAs monolayers has been investigated. It has been suggested that D'yakonov-Perel (DP) mechanism dominates the spin relaxation process at both low and high temperature regimes. The appearance of a peak in temperature dependent spin relaxation time reveals the important contribution of Coulomb scatterings between carriers to the spin kinetics at low temperature, though electron-phonon scattering becomes dominant at higher temperatures. Increased electron screening effect in the n-doped sample has been suggested to account for the shortened spin relaxation time compared with the undoped one. The results suggest that hole spins are also promising for building solid-state qubits.

Temperature dependence of effective g factor in diluted magnetic semiconductor (Ga,Mn)As

Time resolved magneto-optic Kerr rotation measurements of optically induced spin quantum beats are performed on heavily doped bulk (Ga,Mn)As diluted magnetic semiconductors (DMS). An effective g-factor of about 0.2-0.3 over a wide range of temperature for both as-grown and annealed (Ga,Mn)As samples is obtained. A larger effective g-factor at lower temperature and an increase of the spin relaxation with increasing in-plane magnetic field are observed and attributed to the stronger p-d exchange interaction between holes and the localized magnetic ion spins, leading to a larger Zeeman splitting and heavy-hole-light-hole mixing. An abnormal dip structure of the g-factor in the vicinity of the Curie temperature suggests that the mean-field model is insufficient to describe the interactions and dynamics of spins in DMS because it neglects the short-range spin correlation effect. (c) 2008 American Institute of Physics.

Spin relaxation and dephasing mechanism in (Ga,Mn)As studied by time-resolved Kerr rotation

Spin dynamics in (Ga,Mn)As films grown on GaAs(001) was investigated by Time-resolved magneto-optical Kerr effect. The Kerr signal decay time of (Ga,Mn)As without external magnetic field applied was found to be several hundreds picoseconds, which suggested that photogenerated polarized holes and magnetic ions are coupled as a ferromagnetic system. Nonmonotonic temperature dependence of relaxation and dephasing (R&D) time and Larmor frequency manifests that Bir-Aronov-Pikus mechanism dominates the spin R&D time at low temperature, while D'yakonov-Perel mechanism dominates the spin R&D time at high temperature, and the crossover between the two regimes is Curie temperature.

Time-Resolved Photoluminescence of Metamorphic InGaAs Quantum Wells

We investigate the temperature dependence of photoluminescence (PL) and time-resolved PL on the metamorphic InGaAs quantum wells (QWs) with an emission wavelength of 1.55 mu m at room temperature. Time-resolved PL measurements reveal that the optical properties can be partly improved by introducing antimony (Sb) as a surfactant during the sample growth. The temperature dependence of the radiative lifetime is measured, showing that for QWs grown with Sb assistance, the intrinsic exciton emission is dominated when the temperature is below 60 K, while the nonradiative process becomes activated with further increases in temperature. However, without Sb assistance, the nonradiative centers are activated when the temperature is higher than 20 K.

Time-resolved photoluminescence spectra of self-assembled InAs/GaAs quantum dots

Two types of InAs self-assembled Quantum dots (QDs) were prepared by Molecular beam epitaxy. Atomic force microscopy (AFM) measurements showed that, compared to QDs grown on GaAs substrate, QDs grown on InGaAs layer has a significantly enhanced density. The short spacing (several nanometer) among QDs stimulates strong coupling and leads to a large red-shift of the 1.3 mu m photoluminescence (PL) peak. We study systematically the dependence of PL lifetime on the QDs size, density and temperature (1). We found that, below 50 K, the PL lifetime is insensitive to temperature, which is interpreted from the localization effects. As T increases, the PL lifetime increases, which can be explained from the competition between the carrier redistribution and thermal emission at higher temperature. The increase of carriers in QDs migrated from barriers and wetting layer (WL), and the redistribution of carriers among QDs enhance the PL lifetime as T increases. The thermal emission and non-radiative recombination have effects to reduce the PL lifetime at higher T. As a result, the radiative recombination lifetime is determined by the wave function overlapping of electrons and holes in QDs, and QDs with different densities have different PL lifetime dependence on the QDs size. (c) 2005 Elsevier B.V. All rights reserved.