Effects of oxygen partial pressure on packing density and laser damage threshold of TiO2 thin films

TiO2 films are deposited by electron beam evaporation as a function of oxygen partial pressure. The packing density, refractive index, and extinction coefficient all decrease with the increase of pressure, which also induces the change of the film's microstructure, such as the increase of voids and H2O concentration in the film. The laser-induced damage threshold (LIDT) of the film increases monotonically with the rise of pressure in this experiment. The porous structure and low nonstoichiometric defects absorption contribute to the film's high LIDT. The films prepared at the lowest and the highest pressure show nonstoichiometric and surface-defects-induced damage features, respectively.(C) 2007 American Institute of Physics.

High temperature annealing effect on structure, optical property and laser-induced damage threshold of Ta2O5 films

Ta2O5 films were deposited by conventional electron beam evaporation method and then annealed in air at different temperature from 873 to 1273 K. It was found that the film structure changed from amorphous phase to hexagonal phase when annealed at 1073 K, then transformed to orthorhombic phase after annealed at 1273 K. The transmittance was improved after annealed at 873 K, and it decreased as the annealing temperature increased further. The total integrated scattering (TIS) tests and AFM results showed that both scattering and root mean square (RMS) roughness of films increased with the annealing temperature increasing. X-ray photoelectron spectroscopy (XPS) analysis showed that the film obtained better stoichiometry and the O/Ta ratio increased to 2.50 after annealing. It was found that the laser-induced damage threshold (LIDT) increased to the maximum when annealed at 873 K, while it decreased when the annealing temperature increased further. Detailed damaged models dominated by different parameters during annealing were discussed. (C) 2008 Elsevier B. V. All rights reserved.

Laser induced damage threshold at 355 and 1064 nm of Ta2O5 films of different phases

Ta2O5 films are deposited on fused silica substrates by conventional electron beam evaporation method. By annealing at different temperatures, Ta2O5 films of amorphous, hexagonal and orthorhombic phases are obtained and confirmed by x-ray diffractometer ( XRD) results. X-ray photoelectron spectroscopy ( XPS) analysis shows that chemical composition of all the films is stoichiometry. It is found that the amorphous Ta2O5 film achieves the highest laser induced damage threshold ( LIDT) either at 355 or 1064 nm, followed by hexagonal phase and finally orthorhombic phase. The damage morphologies at 355 and 1064 nm are different as the former shows a uniform fused area while the latter is centred on one or more defect points, which is induced by different damage mechanisms. The decrease of the LIDT at 1064nm is attributed to the increasing structural defect, while at 355nm is due to the combination effect of the increasing structural defect and decreasing band gap energy.

植物N;P计量化学：中国高等之外的分异规律与野外试验初步验证

元素化学计量学指从化学计量学的角度出发，通过分析比较生命物质不同结构层次（分子、细胞、器官、机体、种群、群落等）或生态系统中元素的相对比值，来研究各层次相互之间以及生态学过程中元素之间的关系。生态化学计量学研究可以把生态实体的各个层次存元素水平上统一起来，足近年来新兴的一个生态学研究领域，广泛应用于生态学研究中。C，N，P是生物地球化学循环中的重要元素，在生态系统中占有重要地位，许多环境问题都与它们有关，由此这三种元素的化学计量学受到生态学家们的普遍关注。C:N:P化学计量学在水生生态系统中研究较为深入，目前已发展到染色体水平，而在陆地生态系统中的研究较为匮乏近年来由于人类活动的强烈影响，这三种元素的循环在速度和规模上都发生了前所未有的改变，导致一系列环境问题的出现，因此C：N:P化学计量学在陆地生态系统中的研究就显得尤为重要。作为地球生命存在基础的绿色植物，在地球上已有数亿年的演化历史，研究陆地植物的元素化学计量学不仅有助于深入了解植物存在于地球上的内在机制，而且可以为许多环境问题的解决提供理论依据。本文首先建立中国不同地区植物氮磷含量数据库，通过数据分析找出一般规律，并进一步揭示植物不同进化阶段N:P化学计量比的变化规律。在此基础上，通过在内蒙古羊草草原设立不同施肥样地来模拟自然界不同氮磷环境，从试验水平上研究不同施肥处理及施肥梯度下生态系统中氮、磷、有机质的变化规律，并从化学计量学角度研究其内在机制。 利州新建成的中国维管植物数据库（包含1603种植物）研究了不同进化水平以及不同功能群（生活型）间植物N:P比的变化规律，并沿胡焕庸线（胡线）把中团分为为东西两部分，从总体水平上对比了东、西部间叫植物氮磷含量以及N：P的异同。结果表明：l）从演化水平来看，尽管氮磷含量表现出极大的差异，除豆科植物外，植物N：P基本保持稳定水平;2）木本植物与草本植物的N：P比差异．显著，木本植物之间（常绿乔木，常绿灌木，落叶乔木，落叶灌木）N：P不具有显著差异;3）中国东西部植物养分含量和N：P比表现出极显著差异，东部的养分含量低于西部，而N:P显著高于西部。 在内蒙古羊草草原两块永久实验样地（样地A：1980年围封样地和样地B：1999年田封样地）进行了为期两年的N素和P素添加试验。氮素添加梯度为0，5，15，30，50，80 g NHN03.m.2.yr-1。P素添加梯度为0，2，4，8，16，and 32 g P2Osm-2 yr-1（仪分析了羊草器官的结果）。分别从植物器官、物种、功能群水平研究了N素添加对N:P化学计量学的影响，此外还研究了土壤和凋落物C：N:P化学计量学对N素添加的响应。结合生物量的变化趋势，探讨了元素化学计量学对养分状况的指示作用。 1．羊草器官对施肥的响应结果表明，添加N素可以显著提高羊草器官中的含N量，p素可以显著提高器官中的含P量：除2001年样地A中的根茎外，根茎中的含P量基本不受N素添加的影响;茎中的含P量同样表现出不受N素添加影响的趋势（2000年B区茎除外）：N素添加可以显著增大羊草叶片中的含P量(B区2000年叶片除外)。P素添加对羊草器官的含N量没有影响;羊草器官中的氮磷含量施肥处理下表现出显著的正相关关系（N素添加下B区叶片除外）。N素添加对羊草器官的N:P比没有显著影响（A区茎2000年和B区叶片2000年除外）：P素添加显著降低了羊草器官中的N:P比。 2．四种优势植物（羊草、羽茅、针茅和苔草）地上生物量和N:P化学计量学对氮肥的响应研究发现，四个物种的氮磷含量均具有极显著相关关系;氮肥可以显著提高样地A中的羽茅生物量，降低苔草的生物量，而使样地B中的羊草生物量增大;两块样地中，四个物种的氮磷含量及N：P比均随N素水平的增高而增大（样地A中的羽茅N:P比除外）。 3．基于生活型划分的功能群（多年生根茎禾草，多年生丛生禾草，豆科植物，多年生杂类草，一二年生植物，灌木和半灌木）对N素添加的响应研究表明：施N可以提高样地A中的多年生丛生禾草的生物量，而使样地B中的多年生根苇禾草增加;多年生杂类草的相对多度在两个样地中均随施氨水平的增加而显著 降低：在样地B中，施氮可以显著提高不同功能群的氮磷含量;在样地A中，功能群N、P含量对施肥的响应并没有一致的变化规律，添加N素可以显著提高不同功能群的含N量（豆科植物除外），多年生根茎禾草和多年生杂类草的P含量有显著增大的趋势（P < 0.005），而其它功能群（豆科植物、灌木和小半灌木、多年生杂类草和～二年生杂类草）的P含量基本恒定（P>0.05）;在样地A中，多年生丛生禾草，多年生杂类草，一二年生植物，灌木和半灌木的N：P比随施氨水平的增加而显著增大，多年生根茎禾草和豆科植物的N:P比基本不变;在样地B中，多年生丛生禾草的N:P比随施氨水平的增加而显著增大，多年生根茎禾草、多年生杂类草和…二年生杂类草不受施氨水平的影响。 4．添加N素对根实验结果表明：两块样地中，上层根(0-10 cm)的生物量仅在施N后第一年显著增加，而下层根(10-20 cm)的地下生物量在两年的施N处理下均不受施肥梯度的影响i在样地A中，施肥后第一年对根的N、P含量影响不显著，施肥后第二年可以显著增大上层根的N、P含量;在样地B中，添加N素后第一年可以显著增大根的含P量; 在两个样地中，两年的N肥处理对根的N：P比没有显著影响：在施氨处理中，根的N、P含量及N:P比在施肥第一年的响应要高于第二年。 5．所有处理中，上层土壤(O-lO cm)养分含量（有机碳，全氮，全磷）均高于下层土壤（10-20 cm）;在样地A中，氮素添加对r十壤有机碳没有显著性作用，在施肥第一年可以显著增加上层土壤的N、P含量，而在施肥后第二年对土壤N、P含量没有显著影响;在样地B中，添加N素对两年的土壤养分均没有显著影响：养分添加两个样地土壤中的元素比值（C:N比，C:P比，N:P比）没有显著影响;土壤养分对施N一年后的响应要高于第二年。 6．养分添加对凋落物化学特征及化学计量学特征的影响研究结果表明：凋落物现存量不受施肥的影响;2001年凋落物现存量与2000年和2001年的地上生物量相关关系不显著;添加N素可以显著提高凋落物的N含量，而对有机碳含量和P含量没有显著影响;凋落物C：N比随施肥梯度的增大而显著降低，N:P比显著增高，而C:P比没有明显变化。 以上研究结果表明，不同植物功能群的N:P比存在差异，人类活动强烈影响自然植被中的植物N：P比;但植物的N：P比不受植物进化的影响（豆科植物除外）;由于植物已有数亿年的演化历史，同时N与P在植物的结构和功能上具有密切的联系，在生物地球化学循环中办存在耦合作用。因此植物N：P比值恒定可能是一普适性规律。 N素添加试验表明，在植物根、地上器官、物种和功能群水平上N与P均呈显著正相关关系，反映了植物体内的氮磷含量具有协同作用。共存种对N肥的响应不同，表明物种受不同元素的制约。因此除非把生态系统中所有物种对施肥的响应刻画清楚，笼统的认定生态系统缺乏某种元素是不适当的。 施肥试验表明，两种围封时间样地的主要限制性元素不同。极度退化(样地B)植物生长主要缺N，而在保护较好样地(样地A)，P也逐步成为一种限制因素。反映了随着保护时间的增加，植物生长逐渐由N限制型向N、P共同限制型过渡。添加的养分要么被植物吸收，挥发到大气中，或以凋落物的形式返还到土壤表层。但是对养分的预算有待于进一步研究。土壤中的养分含量对N素添加有…个滞后效应，而植物响应较为迅速。功能群N:P比在施肥实验中不能保持恒定，可能是由于实验时间较短的缘故;化学计量学的研究表明羊草草原分解凋落物的微生物受P素的制约，可能是由于植物体内具有高的P素再转运机制。这一结论有待于进一步的验证。氮肥降低了凋落物的C:N比，因此凋落物的分解速率可能将要发生改变。这需要进一步开展C循环的研究。

放牧对内蒙古草原植物C:N:P化学计量特征和资源分配的影响

C、N、P是生物地球化学循环中的重要元素，其可利用性和各元素之间的平衡关系将生态系统的物质循环有机统一为一个整体。化学计量生态学为研究这几种基本元素间的平衡提供了一个有力的理论框架。许多研究表明，过度放牧会改变生态系统的结构和功能，而放牧如何影响植物的C:N:P化学计量关系的却少见报道。本研究以内蒙古锡林河流域沿水分梯度分布的草甸、草甸草原、典型草原和沙地四种植被类型中的灰脉苔草（Carex appendiculata）、贝加尔针茅(Stipa baicalensis)、羊草(Leymus chinensis)、大针茅(Stipa grandis)、小叶锦鸡儿(Caragana microphylla)、冷蒿(Artemisia frigid)、克氏针茅(S. krylovii)和榆树(Ulmus Pumila)疏林沙地8个草地群落为研究对象，对长期禁牧样地和自由放牧样地中273种植物，其中禁牧与放牧样地中的共有植物种为144个，测定了植物叶片C: N: P化学计量特征以及植株高度、丛幅面积、茎、叶和株（丛）生物量、茎叶比等功能性状，系统地研究了放牧对植物C:N:P化学计量特征和资源分配的影响。取得了如下主要研究结果和结论： 1. 放牧降低了植物叶片的C:N比，但增加了N:P比和C:P比。C:N:P 化学计量比的变化主要受叶片N和P含量变化的影响； 2. 植物C:N:P化学计量特征对放牧的响应同时受水分条件的制约。沿水分梯度分布的不同植被类型中，植物叶片C:N:P化学计量特征对放牧的响应不同。草甸群落中，植物叶片C含量显著降低，N和P含量显著增加；在草甸草原群落中，植物叶片C、P含量减少，N含量显著增加；而在典型草原群落中，植物叶片C、N和P含量均显著降低； 3. 在物种水平上，C、N、P含量对放牧的响应分为：显著增加、显著降低和没有显著变化三种类型。放牧影响下，植物叶片N含量和N:P比在显著升高的物种多于显著降低的，而叶片C含量、C:N和C:P显著降低的物种占的比例很小，表明植物对放牧适应策略与物种本身的生物学特性有着密切的关系。 4. 过度放牧使植物的植株高度、丛幅大小、株丛数、茎叶比和单株生物量均显著降低，即植物整体呈现小型化现象，进而导致群落初级生产力、茎和叶生物量下降。轻度放牧对物种的资源分配没有显著影响，单株（丛）生物量和群落茎、叶及总生物量均呈增加趋势，这与过度放牧的影响正好相反。 5. 过度放牧显著改变了物种的资源分配策略，使生物量向叶的分配比例增加，向茎的分配比例减少。资源优先向同化器官分配可能是草地植物对长期放牧干扰的一种重要适应对策。

大白花杜鹃菌根真菌多样性的研究

杜鹃花属(Rhododendron L.)植物分布广泛，研究发现所有的杜鹃花科植物都能形成一种特殊的菌根——杜鹃花类菌根(Ericoid Mycorrhiza)。杜鹃花类菌根对杜鹃花科植物在营养胁迫的环境下生长起到重要的作用。近几年，对杜鹃花类菌根的生物学和生态功能的研究越来越重视。我国是杜鹃花属植物资源最为丰富的国家，因此研究杜鹃花属植物菌根真菌多样性，充分利用杜鹃花特有的菌根资源，促进杜鹃花迁地保护成功具有重大的意义。 本研究以分布较广并且是中国特有的杜鹃花属植物——大白花杜鹃(Rhododendron decorum Franch.)的野生植株为研究对象，应用直接扩增根中真菌ITS区的分子鉴定方法和T-RFLP(末端限制性片段长度多态性)的分析方法，来研究其菌根真菌的多样性；并结合生态化学计量学特征分析、宿主遗传相似性及其群落组成分析等内容，探讨大白花杜鹃的菌根真菌－宿主植物－根际土壤三者之间的关系。主要结果如下： (1)通过用直接扩增真菌ITS区序列，揭示了大白花杜鹃根部真菌的多样性，本研究发现，野生大白杜鹃根部的真菌种类比较丰富，至少有26个ITS-taxa，包括子囊菌和担子菌共5个真菌目：Helotiales、Lecanorales(≡Agyriales)、Onygenales、Sebacinales和Thelephorales，其中包括典型的ERM真菌——树粉孢属Oidiodendron sp.(Myxotrichaceae)真菌。另外还发现了黑色有隔内生菌(Dark septate endophyte，DSE)以及一些未命名的子囊菌。担子菌在本研究中占有较大比例，尤其是蜡壳耳菌目真菌；此外还有较典型的外生菌根真菌——革菌目真菌。 (2)大白花杜鹃野生植株与栽培植株在菌根真菌种类组成上，有一定的相似性；在忽略种源差异等条件下相较而言，前者的物种丰富度远高于后者。 (3)大白花杜鹃菌根真菌多样性和丰富度同它的根际土壤与叶片的C、N、P含量以及C/N、N/P、土壤pH值、宿主的海拔高度等都没有显著的相关关系。 (4)在大白花杜鹃的菌根真菌群落组成方面，整体上保持了相当程度的相似性，同时还保持了一定水平的差异；大白杜鹃菌根真菌的种类是丰富的，优势度指数表明其多样性水平很高。 (5)大白花杜鹃的遗传距离与其菌根真菌群落组成结构有极显著的相关关系，宿主的种内遗传差异可能对菌根真菌群落物种组成产生选择偏好。 (6)大白花杜鹃的群落组成与其菌根真菌群落组成有极为显著的关联性，伴生种的菌根类型可能会影响宿主植物菌根真菌的物种组成结构。

Oxygen pressure dependences of structure and properties of ZnO films deposited on amorphous glass substrates by pulsed laser deposition

ZnO films are prepared on glass substrates by pulsed laser deposition (PLD) at different oxygen pressures, and the effects of oxygen pressure on the structure and optoelectrical properties of as-grown ZnO films are investigated. The results show that the crystallite size and surface roughness of the films increase, but the carrier concentration and optical energy gap E-g decrease with increasing oxygen pressure. Only UV emission is found in the photoluminescence (PL) spectra of all the samples, and its intensity increases with oxygen pressure. Furthermore, there are marked differences in structure and properties between the films grown at low oxygen pressures (0.003 and 0.2 Pa) and the films grown at high oxygen pressures (24 and 150 Pa), which is confirmed by the fact that the crystallite size and UV emission intensity markedly increase, but the carrier concentration markedly decreases as oxygen pressure increases from 0.2 to 24 Pa. These results show that the crystal quality, including the microstructural quality and stoichiometry proportion, of the prepared ZnO films improves as oxygen pressure increases, particularly from 0.2 to 24 Pa.

The effects of substrate temperature on the structure and properties of ZnO films prepared by pulsed laser deposition

ZnO thin films were prepared by pulsed laser deposition (PLD) on glass substrates with growth temperature from room temperature (RT) to 500 degrees C. The effects of substrate temperature on the structural and optical properties of ZnO films have been investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission spectra, and RT photoluminescence (PL) measurements. The results showed that crystalline and (0 0 2)-oriented ZnO films were obtained at all substrate temperatures. As the substrate temperature increased from RT to 500 degrees C, the ratio of grain size in height direction to that in the lateral direction gradually decreased. The same grain size in two directions was obtained at 200 degrees C, and the size was smallest in all samples, which may result in maximum E, and E-0 of the films. UV emission was observed only in the films grown at 200 degrees C, which is probably because the stoichiometry of ZnO films was improved at a suitable substrate temperature. It was suggested that the UV emission might be related to the stoichiometry in the ZnO film rather than the grain size of the thin film. (c) 2007 Elsevier Ltd. All rights reserved.

Does an enhanced yellow luminescence imply a reduction of electron mobility in n-type GaN?

It is studied whether there is any regular relationship between the yellow luminescence band and electron mobility of n-type GaN. For a series of GaN samples grown with the same Si doping, it is found that the electron mobility decreases with an increase of relative intensity of yellow luminescence, accompanied by an increase of edge dislocation density. Further research indicates that it is acceptors introduced by edge dislocations which lead to the concomitant changes of yellow luminescence and electron mobility. Similar changes are induced by Si doping in the n-type GaN samples with relatively low edge dislocation density. However, the relationship between the yellow luminescence and electron mobility of n-type GaN is not a simple one. A light Si doping may simultaneously increase yellow luminescence and electron mobility when Si doping plays a dominant role in reducing the carrier scattering. This means that even the intensity of yellow luminescence is often used as an indicator of material quality for GaN, it does not have any monotonous correlation with the electron mobility of GaN. (c) 2007 American Institute of Physics.

Growth of crack-free GaN films on Si(111) substrate by using Al-rich AlN buffer layer

GaN epilayers were grown on Si(111) substrate by metalorganic chemical vapor deposition. By using the Al-rich AlN buffer which contains Al beyond stoichiometry, crack-free GaN epilayers with 1 mum thickness were obtained. Through x-ray diffraction (XRD) and secondary ion mass spectroscopy analyses, it was found that a lot of Al atoms have diffused into the under part of the GaN epilayer from the Al-rich AlN buffer, which results in the formation of an AlxGa1-xN layer at least with 300 nm thickness in the 1 mum thick GaN epilayer. The Al fraction x was estimated by XRD to be about 2.5%. X-ray photoelectron spectroscopy depth analysis was also applied to investigate the stoichiometry in the Al-rich buffer before GaN growth. It is suggested that the underlayer AlxGa1-xN originated from Al diffusion probably provides a compressive stress to the upper part of the GaN epilayer, which counterbalances a part of tensile stress in the GaN epilayer during cooling down and consequently reduces the cracks of the film effectively. The method using the Al diffusion effect to form a thick AlGaN layer is really feasible to achieve the crack-free GaN films and obtain a high crystal quality simultaneously. (C) 2004 American Institute of Physics.

Effect of the variation of temperature on the structural and optical properties of ZnO thin films prepared on Si (111) substrates using PLD

ZnO thin films were prepared on Si (1 11) substrates at various temperatures from 250 to 700 degrees C using pulsed laser deposition (PLD) technique in order to investigate the structural and optical properties of the films. The structural and morphological properties of the films were investigated by XRD and SEM measurements, respectively. The quality of the films was improved with the increase of the temperature. By XRD patterns the FWHMs of the (0 0 2) peaks of the ZnO films became narrower when the temperatures were above 500 degrees C. The FWHMs of the peaks of (0 0 2) of the films were as narrow as about 0. 19 degrees when films were grown at 650 and 700 degrees C. This indicates the superior crystallinity of the films. The optical properties of the films were studied by photoluminescence spectra using a 325 nm He-Cd laser. The two strongest UV peaks were found at 377.9 nm from ZnO films grown at 650 and 700 degrees C. This result is consistent with that of the XRD investigation. Broad bands in visible region from 450 to 550 nm were also observed. Our works suggest that UV emissions have close relations with not only the crystallinity but also the stoichiometry of the ZnO films. (c) 2005 Elsevier Ltd. All rights reserved.

Role of edge dislocations in enhancing the yellow luminescence of n-type GaN

We investigate the origin of yellow luminescence in n-type GaN. It is found that the relative intensity of yellow luminescence increases as the full width at half maximum of the x-ray diffraction rocking curve at the (102) plane increases. This indicates that the yellow luminescence is related to the edge dislocation density. In addition, the relative intensity of yellow luminescence is confirmed to increase with increasing Si doping for the high quality GaN we have obtained. We propose that the yellow luminescence is effectively enhanced by the transition from donor impurities such as Si to acceptors around the edge dislocations in n-type GaN. (c) 2006 American Institute of Physics.

Effects of the crystal structure on electrical and optical properties of pyrite FeS2 films prepared by thermally sulfurizing iron films

Based on experimental results and theoretical analysis effects of the crystal structure on the optical and electrical properties of pyrite FeS2 films produced by thermally sulfurizing iron films at various temperatures have been systematically studied. The results indicate that the crystal structure and some related factors, such as the crystallization and the stoichiometry, remarkably influence the optical and electrical performances of the pyrite films. It is also shown that the preferred orientation of the crystal grain plays a major role in determining the crystal structure and the optical and electrical properties of the pyrite FeS2 films. Also we find that it is the crystal grains, rather than the particles that exercise a decisive influence on the electrical performance of pyrite films. (C) 2003 Elsevier Science B.V. All rights reserved.

Void formation and failure in InGaN/AlGaN double heterostructures

Condensed clusters of point defects within an InGaN/AlGaN double heterostructure grown by metal-organic vapor phase epitaxy on sapphire substrate have been observed using transmission electron microscopy. The existence of voids results in failure of the heterostructure in electroluminescence. The voids are 50-100 nm in diameter and are distributed inhomogeneously within In0.25Ga0.75N/AlGaN active layers. The density of the voids was measured as 10(15) cm(-3), which corresponds to a density of dangling bonds of 10(20) cm(-3). These dangling bonds may fully deplete free carriers in this double heterostructure and result in the heterostructure having high resistivity as confirmed by electrical measurement. (C) 2003 Elsevier Science B.V. All rights reserved.

Space grown semi-insulating gallium arsenide single crystal and its application

Low noise field effect transistors and analogue switch integrated circuits (ICs) have been fabricated in semi-insulating gallium arsenide (SI-GaAs) wafers grown in space by direct ion-implantation. The electrical behaviors of the devices and the ICs have surpassed those fabricated in the terrestrially grown SI-GaAs wafers. The highest gain and the lowest noise of the transistors made from space-grown SI-GaAs wafers are 22.8 dB and 0.78 dB, respectively. The threshold back-gating voltage of the ICs made from space-grown SI-GaAs wafers is better than 8.5 V The con-elation between the characterizations of materials and devices is studied systematically. (C) 2002 COSPAR. Published by Elsevier Science Ltd. All rights reserved.