Sol-gel method for the preparation of solid-phase microextraction fibers

A novel sol-gel method is applied for the preparation of solid-phase microextraction (SPME) fibers. Scanning electron microscopy experiments suggested a porous structure for the poly(dimethylsiloxane) (PDMS) coating. SPME-GC analysis provided evidence that the sol-gel fibers have some advantages, such as high thermal stability, efficient extraction rates, high velocities of mass transfer, and spacious range of application.

Improvement of thin silicon on sapphire (SOS) film materials and device performances by solid phase epitaxy

The increased emphasis on sub-micron CMOS/SOS devices has placed a demand for high quality thin silicon on sapphire (SOS) films with thickness of the order 100-200 nm. It is demonstrated that the crystalline quality of as-grown thin SOS films by the CVD method can be greatly improved by solid phase epitaxy (SPE) process: implantation of self-silicon ions and subsequent thermal annealing. Subsequent regrowth of this amorphous layer leads to a greater improvement in silicon layer crystallinity and channel carrier mobility, evidenced, respectively, by double crystal X-ray diffraction and electrical measurements. We concluded that the thin SPE SOS films are suitable for application to high-performance CMOS circuitry. (C) 2000 Elsevier Science S.A. All rights reserved.

Solid-phase crystallization and dopant activation of amorphous silicon films by pulsed rapid thermal annealing

An improved pulsed rapid thermal annealing method has been used to crystallize amorphous silicon films prepared by PECVD. The solid-phase crystallization and dopant activation process can be completed with time-temperature budgets such as 10 cycles of 60-s 550 degrees C thermal bias/l-s 850 degrees C thermal pulse. A mean grain size more than 1000 Angstrom and a Hall mobility of 24.9 cm(2)/V s are obtained in the crystallized films. The results indicate that this annealing method possesses the potential for fabricating large-area and good-quality polycrystalline silicon films on low-cost glass substrate. (C) 1998 Elsevier Science B.V. All rights reserved.

COMPARISON OF PROPERTIES OF SOLID-PHASE EPITAXIAL SILICON-ON-SAPPHIRE FILMS RECRYSTALLIZED BY RAPID THERMAL ANNEALING AND FURNACE ANNEALING

Chemically vapour deposited silicon on sapphire (SOS) films 0.25 mu m thick were implanted with Si-28(+) and recrystallized in solid phase by furnace annealing (FA) and IR rapid thermal annealing (RTA) in our laboratory. An improvement in crystalline quality can be obtained using both annealing procedures. After FA, it is hard to retain the intrinsic high resistivity value(10(4)-10(5) Ohm cm) observed in as-grown SOS films, so the improvement process cannot be put to practical use effectively. However, it is demonstrated that by properly adjusting the implantation and RTA conditions, significant improvements in both film quality and film autodoping can be accomplished. This work describes a modified double solid phase epitaxy process in which the intrinsic high resistivities of the as grown SOS films are retained. The mechanism of suppression of Al autodoping is discussed.

Improvement of CMOS SOS devices characteristics by a modified solid phase epitaxy

CMOS/SOS devices have lower carriers mobility and higher channel leakage current than bulk silicon CMOS devices. These mainly results from the defects of heteroepitaxial silicon film, especially from the defects near Si-Sapphire interface. This paper describes the experiment results of CMOS/SOS devices characteristics improved by a better epitaxial silicon quality which is obtained by a modified solid phase epitaxy.

Improvement of thin silicon on sapphire (SOS) film materials and device performances by solid phase epitaxy

The increased emphasis on sub-micron CMOS/SOS devices has placed a demand for high quality thin silicon on sapphire (SOS) films with thickness of the order 100-200 nm. It is demonstrated that the crystalline quality of as-grown thin SOS films by the CVD method can be greatly improved by solid phase epitaxy (SPE) process: implantation of self-silicon ions and subsequent thermal annealing. Subsequent regrowth of this amorphous layer leads to a greater improvement in silicon layer crystallinity and channel carrier mobility, evidenced, respectively, by double crystal X-ray diffraction and electrical measurements. We concluded that the thin SPE SOS films are suitable for application to high-performance CMOS circuitry. (C) 2000 Elsevier Science S.A. All rights reserved.

Determination and identification of isoflavonoids in Radix astragali by matrix solid-phase dispersion extraction and high-performance liquid chromatography with photodiode array and mass spectrometric detection

The isoflavonoids in Radix astragali were determined and identified by HPLC-photodiode array detection-MS after extraction employing matrix solid-phase dispersion (MSPD). As a new sample preparation method for R. astragali, the MSPD procedure was optimized, validated and compared with conventional methods including ultrasonic and Soxhlet extraction. The amounts of two major components in this herb, formononetin (6) and ononin (2), were determined based on their authentic standards. Four major isoflavonoids, formononetin (6), ononin (2), calycosin (5) and its glycoside (1), and three minor isoflavonoids, (6aR,11aR)-3-hydroxy-9, 10-dimethoxypterocarpan (7), its glycoside (3), and (3R)-7,2'-dihydroxy-3',4'-dimethoxyisoflavone-7-O-beta-D-glycoside (4), were identified based on their characteristic two-band UV spectra and [M + H](+), [aglycone + H](+) and [A1 + H](+) ions, etc. The combined MSPD and HPLC-DAD-MS method was suitable for quantitative and qualitative determination of the isoflavonoids in R. astragali. (C) 2003 Elsevier B.V. All rights reserved.

Molecularly imprinted solid-phase extraction sorbent for removal of nicotine from tobacco smoke

A sorbent showing specific affinity for nicotine was prepared by molecular imprinting technique, using nicotine as the template, methacrylic acid (MAA) as the functional monomer, ethyleneglycol dimethacrylate (EDMA) as the crosslinker and chloroform as the porogen. UV spectroscopic analysis in the molecular imprinting prepolymerization stage confirmed that nicotine could complex with the functional monomer by electrostatic interaction (ionic interaction and hydrogen bonding). The affinity and the binding properties of the imprinted polymer towards nicotine were investigated by equilibrium rebinding experiments. The results indicated the presence of nicotine-specific binding sites in the imprinted polymer, and that the imprinted polymer had a good capacity (90 mumol/g polymer) for nicotine. The elution conditions were optimized on the column packed with the imprinted polymer to elute nicotine quantitatively. The imprinted polymer was used as a solid-phase extraction (SPE) material for the removal of nicotine from tobacco smoke. The results obtained showed that the imprinted polymer was superior in terms of removing nicotine in tobacco smoke, compared with the commercial filter tip.

Self-assembled 3D Architectures of LuBO3 : Eu3+: Phase-selective synthesis, growth mechanism, and tunable luminescent properties

Rhombohedral-calcite and hexagonal-vaterite types of LuBO:Eu3+ microparticles with various complex self-assembled 3D architectures have been prepared selectively by an efficient surfactant- and template-free hydrothermal process for the first time. X-ray diffraction, scanning electron microscopy, energy-dispersive X-ray spectrometry, transmission electron microscopy, high-resolution transmission electron microscopy, selected area electron diffraction, photoluminescence, and cathodoluminescence spectra as well as kinetic decays were used to characterize the samples.