Distribution of 25 semi-volatile organic compounds of two urban lakes in Wuhan, China

In this study, the levels of 25 semi-volatile organic compounds (SVOCs) were measured in samples of water, suspended particulate matter (SPM) and sediment from two urban lakes in Wuhan, China. The total concentrations of 25 SVOCs varied from 529.4 to 2168.9 ng/L, 120.7 to 22543.7 ng/g dry weight and 1577.3 to 61579.6 ng/g dry wt. in water, SPM and sediment, respectively. The concentration of SVOCs in SPM was 9-10 times higher than that in water, and the concentration of SVOCs in sediment 1.5-2 times higher than that in SPM. The level of total SVOC25 in the samples from Moshuihu Lake was higher than that in Yuehu Lake. Among the 25 SVOCs, phthalate compounds were on the highest level in all observed samples ranging between 441.9-1831.2 ng/L, 116.3-17566.8 ng/g, dry wt. and 6432.8-48177.6 ng/g dry wt. in water, SPM and sediment, respectively. Bis(2-ethylhexyl)phthalate, the predominant component of the analyzed pollutants, was in the range from 246.7 to 537.5 ng/l, 51.2 to 15540.0 ng/g dry wt. and 468.2 to 45010.3 ng/g dry wt. in water, SPM and sediment, respectively. The content of PAHs, dinitrotoluene and isophoton in sediment was higher than that in water and SPM at most of the locations. The possible sources of the pollutants and their inter-relation with human activities were discussed.

Integratable and High Speed Complex-Coupled MQW-DFB Lasers Fabricated on Semi-Insulating Substrates

A novel integratable and high speed InGaAsP multi-quantum well (MQW) complex-coupled distributed feedback (DFB) laser is successfully fabricated on a semi-insulating substrate. The fabricated ridge DFB laser exhibits a threshold current of 26 mA, a slope efficiency of 0.14 W.A(-1) and a side mode suppression ratio of 40 dB together with a 3 dB bandwidth of more than 8 GHz. The device is suitable for 10 Gbit/s optical fiber communication.

Influence of deep level defects on electrical compensation in semi-insulating InP materials

In this paper, we analyze and compare electrical compensation and deep level defects in semi-insulating ( SI) materials prepared by Fe-doping and high temperature annealing of undoped InP. Influence of deep level defects in the SI-InP materials on the electrical compensation has been studied thermally stimulated current spectroscopy (TSC). Electrical property of the Fe-doped SI-InP is deteriorated due to involvement of a high concentration of deep level defects in the compensation. In contrast, the concentration of deep defects is very low in high temperature annealed undoped SI-InP in which Fe acceptors formed by diffusion act as the only compensation centre to pin the Fermi level, resulting in excellent electrical performance. A more comprehensive electrical compensation model of SI-InP has been given based on the research results.