Nonpolarizing beam splitter designed by frustrated total internal reflection inside a glass cube

A method for the design of an all-dielectric nonpolarizing prism beam splitter utilizing the principle of frustrated total internal reflection is reported. The nonpolarizing condition for a prism beam splitter is discussed, and some single layer design examples are elaborated. The concept can be applied to a wide range of wavelengths and arbitrary transmittance values, and with the help of a computer design program examples of 400-700 nm, T-p = T-p = 0.5 +/- 0.01, with incident angles of 45 degrees and 62 degrees are given. In addition, the sensitivity and application of the design are also discussed. (c) 2006 Optical Society of America.

Characteristics of high reflection mirror with an SiO2 top layer for multilayer dielectric grating

The high reflection (HR) mirror composed of dielectric stacks with excellent spectrum characteristics and high damage resistant ability is critical for fabricating multilayer dielectric (MLD) grating for pulse compressor. The selection of the SiO2 material as the top layer of the HR mirror for grating fabrication is beneficial for improving the laser-induced damage threshold of MLD grating as well as minimizing the standing-wave effect in the photoresist during the exposure process. Based on an (HLL) H-9 design comprising quarter-waves of HfO2 ( H) and half-waves of SiO2 ( L), we obtain an optimal design of the HR mirror for MLD grating, the SiO2 top layer of which is optimized with a merit function including both the diffraction efficiency of the MLD grating and the electric field enhancement in the grating. Dependence of the performance of the MLD grating on the fabrication error of the dielectric mirror is analysed in detail. The HR mirror is also fabricated by E-beam evaporation, which shows good spectral characteristics at the exposure wavelength of 413 nm and at the operation wavelength of 1053 nm and an average damage threshold of 10 J cm(-2) for a 12 ns pulse.

Design of high-efficiency diffraction gratings based on total internal reflection for pulse compressor

We present designs of high-efficiency compression grating based on total internal reflection (TIR) for picosecond pulse laser at 1053 nm. The setup is devised by directly etching gratings into the bottom side of a prism so that light can successfully enter (or exit) the compression grating. Dependence of the -1 order diffraction efficiencies on the constructive parameters is analyzed for TE- and TM-polarized incident light at Littrow angle by using Fourier modal method in order to obtain optimal grating structure. The electric field enhancement within the high-efficiency TIR gratings is regarded as another criterion to optimize the structure of the TIR gratings. With the criterion of high diffraction efficiency, low electric field enhancement and sufficient manufacturing latitude, TIR compression gratings with optimized constructive parameters are obtained for TE- and TM-polarized incident light, respectively. The grating for TE-polarized light exhibits diffraction efficiencies higher than 0.95 within 23 nm bandwidth and relatively low square of electric field enhancement ratio of 5.7. Regardless of the internal electric field enhancement, the grating for TM-polarized light provides diffraction efficiencies higher than 0.95 within 42 nm bandwidth. With compact structure, such TIR compression gratings made solely of fused silica should be of great interest for application to chirped pulse amplification (CPA) systems. (c) 2007 Elsevier B.V. All rights reserved.

Electric field distribution in resonant reflection filters under normal incidence

Electric field distributions inside resonant reflection filters constructed using planar periodic waveguides are investigated in this paper. The electric fields may be intensified by resonance effects. Although the resonant reflection peaks can be quite narrow using weakly modulated planar periodic waveguides, the strong electric field enhancement limits their use in high-power laser systems. Strongly modulated waveguides may be used to reduce the electric field enhancement and a cover layer may be used to narrow the bandwidth at the same time. Desired results (i.e. almost no electric field enhancement together with narrow bandwidth) can be realized using this simple structure.

Ultra-narrow bandwidth resonant reflection grating filters using the second diffracted orders

In this paper, we design resonant reflection grating filters employing the second diffracted orders as the leaky modes, then analyze the bandwidth of the reflection peak and the electric field distributions inside the wavegude under resonance. The numeric calculation confirms that ultra-narrow resonant reflection peaks can be observed in these structures. At the same time, strong electric field enhancement appears under resonance. It provides a new approach to diversify the resonant reflection filters and may open a new way to the realization of ultra-narrow bandwidth filters. (C) 2008 Elsevier B.V. All rights reserved.

Ultrafast carrier dynamics in undoped and p-doped InAs/GaAs quantum dots characterized by pump-probe reflection measurements

We investigate the dependence of the differential reflection on the structure parameters of quantum dot (QD) heterostructures in pump-probe reflection measurements by both numerical simulations based on the finite-difference time-domain technique and theoretical calculations based on the theory of dielectric films. It is revealed that the value and sign of the differential reflection strongly depend on the thickness of the cap layer and the QD layer. In addition, a comparison between the carrier dynamics in undoped and p-doped InAs/GaAs QDs is carried out by pump-probe reflection measurements. The carrier capture time from the GaAs barrier into the InAs wetting layer and that from the InAs wetting layer into the InAs QDs are extracted by appropriately fitting differential reflection spectra. Moreover, the dependence of the carrier dynamics on the injected carrier density is identified. A detailed analysis of the carrier dynamics in the undoped and p-doped QDs based on the differential reflection spectra is presented, and its difference with that derived from the time-resolved photoluminescence is discussed. (C) 2008 American Institute of Physics.

Entanglement degree of electron pairs out of Andreev reflection

We study the entanglement degree of electron pairs emitted from an s-wave Superconductor, which Couples to two normal leads via a single-level quantum dot. Within the framework of scattering matrix theory. the concurrence is used to quantify the entanglement. And the result shows that the entanglement degree is generally influenced by the initial separation of the two electrons in a Cooper pair and the normal transmission eigenvalues T-1, T-2. But it is only determined by the eigenvalues in the tunnelling limit, T-1. T-2 << 1, what is more. it is measurable. (C) 2008 Elsevier B.V. All rights reserved.

Study on the internal reflection of the multimode-interference-type device

The internal reflection of the multimode-interference (MMI)-type device is calculated with the bidirectional beam propagation method. The calculated results indicate that the difference of the effective refractive indices between the core region and the surrounding region has a determining effect on the internal reflection of the MMI-type device. The output taper for the MMI-type combiner and splitter has a more evident effect on the internal reflection than the input taper. The internal reflection decreases with increasing the end width of the taper. For the MMI-type device with appropriate tapers, the internal reflection does not show evident degradation with the deviation of the length of the MMI region from its optimal value. (C) 2004 Society of Photo-Optical Instrumentation Engineers.

Effect of metal contact's reflection on the effective coupling coefficient of second-order DFB laser diodes

For a second-order DFB-LD, the presence of a metal contact layer can reduce I-st-order radiation. Part of the reflected power is redistributed into guided modes and results in a variation of the effective coupling coefficient kappa(eff). In this paper, we study the effect of the Au top contact's reflection on the kappa(eff) of 2(nd)-order DFB lasers. (C) 2004 Wiley Periodicals, Inc.

Integrated folding 4x4 optical matrix switch with total internal reflection mirrors on SOI by anisotropic chemical etching

A folding rearrangeable nonblocking 4 x 4 optical matrix switch was designed and fabricated on silicon-on-insulator wafer. To compress chip size, switch elements (SEs) were interconnected by total internal reflection (TIR) mirrors instead of conventional S-bends. For obtaining smooth interfaces, potassium hydroxide anisotropic chemical etching of silicon was utilized to make the matrix switch for the first time. The device has a compact size of 20 x 1.6 mm(2) and a fast response of 7.5 mu s. The power consumption of each 2 x 2 SE and the average excess loss per mirror were 145 mW and -1.1 dB, respectively. Low path dependence of +/- 0.7 dB in total excess loss was obtained because of the symmetry of propagation paths in this novel matrix switch.

Novel folding large-scale optical switch matrix with total internal reflection mirrors on silicon-on-insulator by anisotropy chemical etching

A compact optical switch matrix was designed, in which light circuits were folded by total internal reflective (TIR) mirrors. Two key elements, 2 x 2 switch and TIR mirror, have been fabricated on silicon-on-insulator wafer by anisotropy chemical etching. The 2 x 2 switch showed very low power consumption of 140 mW and a very high speed of 8 +/- 1 mus. An improved design for the TIR mirror was developed, and the fabricated mirror with smooth and vertical reflective facet showed low excess loss of 0.7 +/- 0.3 dB at 1.55 mum.

Simple reflection technique for measuring the linear electro-optic coefficient of the polymer thin films

The simple reflection technique is usually used to measure the linear electro-optic (EO) coefficient (Pockels coefficient) in the development of EO polymer thin films. But there are some problems in some articles in the determination of the phase shift between the s and p light modes of a laser beam waveguided into the polymer film while a modulating voltage is applied across the electrodes, and different expressions for the linear EO coefficient measured have been given in these articles. In our research, more accurate expression of the linear EO coefficient was deduced by suitable considering the phase shift between the s and p light modes. The linear EO coefficients of several polymer thin films were measured by reflection technique, and the results of the Linear EO coefficient calculated by different expressions were compared. The limit of the simple reflection technique for measuring the linear EO coefficient of the polymer thin films was discussed.

SOI optical switch matrix integrated with spot size converter (SSC) and total internal reflection (TIR) mirrors

SOI (Silicon on Insulator) based photonic devices has attracted more and more attention in the recent years. Integration of SOI optical switch matrix with isolating grooves, total internal reflection (TIR) mirrors and spot size converter (SSC) was studied. A folding re-arrangeable non-blocking 4x4 optical switch matrix and a blocking 16x16 matrix with TIR mirrors and SSC were fabricated on SOI wafer. The performaces, including extinction ratio and the crosstalk, are better than before. The insertion loss and the polarization dependent loss (PDL) at 1.55 mu m increase slightly with longer device length, more bend and intersecting waveguides. The insertion losses decrease 2 similar to 3 dB when anti-reflection films are added in the ends of the devices. The rise and fall times of the devices are 2.1 mu s and 2.3 mu s, respectively.