Correlation of electrical and optical properties in dually Cd+ and N+ ion-implanted GaAs

Cd in GaAs is an acceptor atom and has the largest atomic diameter among the four commonly-used group-II shallow acceptor impurities (Be, Mg, Zn and Cd). The activation energy of Cd (34.7 meV) is also the largest one in the above four impurities, When Cd is doped by ion implantation, the effects of lattice distortion are expected to be apparently different from those samples ion-implanted by acceptor impurities with smaller atomic diameter. In order to compensate the lattice expansion and simultaneously to adjust the crystal stoichiometry, dual incorporation of Cd and nitrogen (N) was carried out into GaAs, Ion implantation of Cd was made at room temperature, using three energies (400 keV, 210 keV, 110 keV) to establish a flat distribution, The spatial profile of N atoms was adjusted so as to match that of Cd ones, The concentration of Cd and N atoms, [Cd] and [N] varied between 1 x 10(16) cm(-3) and 1 x 10(20) cm(-3). Two type of samples, i.e., solely Cd+ ion-implanted and dually (Cd+ + N+) ion-implanted with [Cd] = [N] were prepared, For characterization, Hall effects and photoluminescence (PL) measurements were performed at room temperature and 2 K, respectively. Hall effects measurements revealed that for dually ion-implanted samples, the highest activation efficiency was similar to 40% for [Cd] (= [N])= 1 x 10(18) cm(-3). PL measurements indicated that [g-g] and [g-g](i) (i = 2, 3, alpha, beta,...), the emissions due to the multiple energy levels of acceptor-acceptor pairs are significantly suppressed by the incorporation of N atoms, For [Cd] = [N] greater than or equal to 1 x 10(19) cm(-3), a moderately deep emission denoted by (Cd, N) is formed at around 1.45-1.41 eV. PL measurements using a Ge detector indicated that (Cd, N) is increasingly red-shifted in energy and its intensity is enhanced with increasing [Cd] = [N], (Cd, N) becomes a dominant emission for [Cd] = [N] = 1 x 10(20) cm(-3). The steep reduction of net hole carrier concentration observed for [Cd]/[N] less than or equal to 1 was ascribed to the formation of (Cd, N) which is presumed to be a novel radiative complex center between acceptor and isoelectronic atoms in GaAs.

Investigation on Fe, Mn, Zn, Cu, Pb and Cd fractions in the natural surface coatings sampled and surficial sediments collected in the Songhua River, China

Natural surface coatings sampled (NSCSs) from the surface of shingles and surficial sediments (SSs) in the Songhua River, China were employed to investigate the similarities and difference in fractions of heavy metals (Fe, Mn, Zn, Cu, Pb, and Cd) between NSCSs and SSs using the modified sequential extraction procedure (MSEP). The results show that the differences between NSCSs and SSs in Fe fractions were insignificant and Fe was dominantly present as residual phase (76.22% for NSCSs and 80.88% for SSs) and Fe-oxides phase (20.33% for NSCSs and 16.15% for SSs). Significant variation of Mn distribution patterns between NSCSs and SSs was observed with Mn in NSCSs mainly present in Mn-oxides phase (48.27%) and that in SSs present as residual phase (45.44%). Zn, Cu, Pb and Cd were found dominantly in residual fractions (>48%), and next in solid oxides/hydroxides for Zn, Pb and Cd and in easily oxidizable solids/compounds form for Cu, respectively. The heavy metal distribution pattern implied that Fe/Mn oxides both in NSCSs and SSs were more important sinks for binding and adsorption of Zn, Pb and Cd than organic matter (OM), and inversely, higher affinity of Cu to OM than Fe/Mn oxides in NSCSs and SSs was obtained. Meanwhile, it was found that the distributions of heavy metals in NSCSs and SSs were similar to each other and the pseudo-total concentrations of Zn, Cu, Pb and Cd in NSCSs were greater than those in SSs, highlighting the more importance for NSCSs than SSs in controlling behaviours of heavy metals in aquatic environments.

半磁半导体Cd（1-x）MnxTe压力光致发光研究

于2010-11-23批量导入

Cd－豆磺隆复合污染黑土多介质界面过程及化学动力学

Cd和豆磺隆是黑土区比较典型的两种化学污染物，通过开展水－土界面Cd迁移试验、根－土界面Cd吸附－解吸试验、根－土界面Cd化学形态变化动力学试验及Cd－豆磺隆联合胁迫生物化学反应动力学试验，对Cd在Cd－豆磺隆污染黑土多介质界面过程及化学动力学进行了研究，为黑土区Cd和豆磺隆污染防治提供理论依据。 pH对水－土界面Cd扩散和吸附过程产生明显的影响，一般是在酸性条件下，比较有利于Cd在水－土界面的迁移，在碱性条件下，其迁移能力明显降低。豆磺隆影响水－土界面Cd迁移行为，且对水－土界面和土－水界面Cd迁移行为产生影响的结果不同。 Elovich方程和双常数方程分别是描述根－土界面Cd吸附和解吸的最优动力学方程。根－土界面Cd吸附量大于非根－土界面Cd吸附量，而解吸时的情况与此相反。豆磺隆对Cd的吸附和解吸都表现出抑制作用。 小麦体内Cd积累量随着土壤中Cd浓度的增加而增加，豆磺隆抑制Cd的吸收，Cd－豆磺隆在小麦体吸Cd过程中表现出拮抗效应。根－土界面各层碳酸盐和铁锰结合态Cd可向可交换态Cd转化，且这种转化趋势由根中心区向根外区减弱，而向残留态Cd转化的趋势加强，近根层的可交换态Cd和有机结合态Cd是小麦能直接利用的两种Cd形态。Cd－豆磺隆复合污染对脲酶表现出拮抗效应，而对过氧化氢酶和酸性磷酸酶则有一定的协同效应。

Cd、Cu污染胁迫对拟南芥幼苗错配修复相关基因表达的影响

土壤重金属污染问题已成为影响我国持续农业和生态环境质量的重要因素，引起了人们的广泛关注。由于传统污染诊断方法的缺点，急需建立土壤污染生态毒理学诊断方法，生物标记物技术则是其中的研究热点之一。本文采用营养液培养的方法，以模式植物拟南芥为试材，采用半定量反转录聚合酶链式反应（RT-PCR）技术，结合传统分析方法研究了Cd、Cu在不同胁迫水平下对拟南芥幼苗的形态、生理及分子水平的毒性效应，并在此基础上，比较和分析不同测试指标对Cd、Cu胁迫响应的敏感性，进而筛选对Cd、Cu胁迫响应敏感的生物标记物。主要结果如下： 1 不同浓度Cd和Cu污染胁迫下，拟南芥幼苗生长均受到不同程度的影响 幼苗初生根伸长均受到明显抑制，而地上部叶片数、地上部鲜重却没有显著的变化。重金属首先作用于植物的根系，根系的生长对胁迫响应的敏感性高于地上部。 2 幼苗地上部的可溶性蛋白含量受到不同程度干扰，而在不同浓度的Cd、 Cu处理下，叶绿素含量变化不明显，表明幼苗地上部可溶性蛋白质含量对胁迫的敏感性高于叶绿素含量的变化。 3 幼苗地上部错配修复（MMR）和增殖细胞核抗原（PCNA）基因都明显 地出现了表达诱导或表达抑制，表明MMR和PCNA基因表达的变化对Cd、Cu胁迫表现出较高的敏感性。 4 幼苗地上部的可溶性蛋白质含量及幼苗地上部MMR和PCNA基因表达 均对Cd和Cu污染胁迫具有较高的敏感性，两者均可用于指示Cd和Cu污染的敏感生物标记物。基因表达变化图谱虽然对污染胁迫响应比较敏感，是一种污染胁迫响应敏感的生物标记物，但其在生态毒理诊断中的应用还需进一步的实验对其予以证明。

Cd、Pb、Cu、Zn和As在草甸棕壤中垂直迁移规律的研究

本文运用土柱淋溶试验，研究了不同条件下Cd、Pb、Cu、Zn和As等五种重金属元素在草甸棕壤中垂直迁移的规律。试验表明，一般情况下各重金属元素向下迁移的深度不超过10cm，绝大部分还是滞留在表层污染土中，因此在本试验条件下不会因淋溶迁移而导致地下水的污染。从不同重金属元素的迁移情况来看，Cd和Zn的迁移能力较强，Cu、Pb和As的迁移能力较弱。随着土壤pH值降低，Cd、Pb、Cu和Zn的迁移加强，As的迁移减弱。加大淋溶水量，能促进各种重金属离子随土壤水溶液的迁移。在供试浓度下，各重金属元素对水稻的生长没有危害，但对紫花苜蓿的生长却有影响，水稻籽实（或糙米）和紫花苜蓿茎叶中各重金属元素的含量都有增加，甚至超标。土壤施用石灰，能抑制各重金属元素在草甸棕壤中的迁移及被作物的吸收，是降低土壤重金属污染危害的一个有效措施。但是利用施加腐殖酸来防治土壤重金属污染往往会因造成土壤pH值下降、增加某些重金属的可溶性而遭失败。试验还表明，Cd、Pb、Cu和Zn的迁移在酸雨条件下会加剧，但As的迁移仅在弱酸性酸雨条件下增加，强酸性酸雨反而抑制As的迁移。

土壤－植物系统中Cd、Cu和石油烃复合污染效应与机理研究

本研究模拟在Cd、Cu和石油烃复合污染条件上对水稻的生态效应，探讨污染物在土壤－－植物系统中迁移转化规律、污染物间的交互作用关系及其机制。结果表明：Cu与石油烃及Cd与石油烃对水稻的生态效应表明它们之间均存在拮抗作用，Cd、Cu和石油烃三者之间也存在拮抗作用，Cd与Cu之间在低浓度时表现为拮抗作用，而在高浓度时则表现为协同作用。污染物浓度是影响污染物间交互作用关系的重要因子。