89 resultados para neutral currents


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We suggest a different practical scheme for the direct detection of pure spin current by using the two-color Faraday rotation of optical quantum interference process (QUIP) in a semiconductor system. We demonstrate theoretically that the Faraday rotation of QUIP depends sensitively on the spin orientation and wave vector of the carriers, and can be tuned by the relative phase and the polarization direction of the omega and 2 omega laser beams. By adjusting these parameters, the magnitude and direction of the spin current can be detected.

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Spin states and persistent currents are investigated theoretically in a quantum ring with an embedded magnetic ion under a uniform magnetic field including the spin-orbit interactions. The magnetic impurity acts as a spin-dependent delta-potential for electrons and results in gaps in the energy spectrum, consequently suppressing the oscillation of the persistent currents. The competition between the Zeeman splittings and the s-d exchange interaction leads to a transition of the electron ground state in the ring. The interplay between the periodic potential induced by the Rashba and Dresselhaus spin-orbit interactions and the delta-potential induced by the magnetic impurity leads to significant variation in the energy spectrum, charge density distribution, and persistent currents of electrons in the ring.

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We theoretically investigate the charge and spin currents in a three-terminal mesoscopic ring in the presence of a uniform and nonuniform Rashba spin-orbit interaction (SOI). It is shown that a fully spin-polarized charge current and a pure spin current can be generated by tuning the probe voltages and/or the strength of the Rashba SOI. The charge and spin currents oscillate as the strength of the Rashba SOI increases induced by the spin quantum interference. The ratio of probe voltages oscillates synchronously with the pure spin current as the strength of the Rashba SOI increases in a nonuniform Rashba ring, while it remains constant in a uniform Rashba ring. We demonstrate theoretically that a three-terminal uniform Rashba ring can be used as a spin polarizer and/or spin flipper for different spin injections, and a nonuniform Rashba ring could allow us to detect the pure spin current electrically. (C) 2009 American Institute of Physics. [DOI 10.1063/1.3054322]

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The binding energy of an exciton bound to a neutral donor (D-0,X) in GaAs quantum-well wires is calculated variationally as a function of the wire width for different positions of the impurity inside the wire by using a two-parameter wavefunction. There is no artificial parameter added in our calculation. The results we have obtained show that the binding energies are closely correlated to the sizes of the wire, the impurity position, and also that their magnitudes are greater than those in the two-dimensional quantum wells compared. In addition, we also calculate the average interparticle distance as a function of the wire width. The results are discussed in detail.

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We investigate the spin polarized current through a quantum dot connected to ferromagnetic leads in the presence of a finite spin-dependent chemical potential. The effects of the spin polarization of the leads p and the external magnetic field B are studied. It is found that both the magnitude and the symmetry of the current are dependent on the spin polarization of the leads. When the two ferromagnetic leads are in parallel configuration, the spin polarization p has an insignificant effect on the spin current, and an accompanying charge current appears with the increase of p. When the leads are in antiparallel configuration, however, the effect of p is distinct. The charge current is always zero regardless of the variation of p in the absence of B. The peaks appearing in the pure spin current are greatly suppressed and become asymmetric as p is increased. The applied magnetic field B results in an accompanying charge current in both the parallel and antiparallel configurations of the leads. The characteristics of the currents are explained in terms of the density of states of the quantum dot.

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Unusual dark current voltage (I-V) characteristics were observed in GaN Schottky diodes. I-V characteristics of the GaN Schottky diodes were measured down to the magnitude of 10(-14) A. Although these Schottky diodes were clearly rectifying, their I-V characteristics were non-ideal which can be judged from the non-linearity in the semi-logarithmic plots. Careful analysis of the forward bias I-V characteristics on log-log scale indicates space-charge-limited current (SCLC) conduction dominates the current transport in these GaN Schottky diodes. The concentration of the deep trapping centers was estimated to be higher than 10(15) cm(-3). In the deep level transient spectra (DLTS) measurements for the GaN Schottky diodes, deep defect levels around 0.20 eV below the bottom of the conduction band were identified, which may act as the trapping centers. The concentration of the deep centers obtained from the DLTS data is about 5 x 10(15) cm(-3). SCLC measurements may be used to probe the properties of deep levels in wide bandgap GaN-AlGaN compound semiconductors, as is the case with insulators in the presence of trapping centers. (c) 2005 Elsevier Ltd. All rights reserved.

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We investigate theoretically electron spin states in one-dimensional and two-dimensional (2D) hard-wall mesoscopic rings in the presence of both the Rashba spin-orbit interaction (RSOI) and the Dresselhaus spin-orbit interaction (DSOI) in a perpendicular magnetic field. The Hamiltonian of the RSOI alone is mathematically equivalent to that of the DSOI alone using an SU(2) spin rotation transformation. Our theoretical results show that the interplay between the RSOI and DSOI results in an effective periodic potential, which consequently leads to gaps in the energy spectrum. This periodic potential also weakens and smoothens the oscillations of the persistent charge current and spin current and results in the localization of electrons. For a 2D ring with a finite width, higher radial modes destroy the periodic oscillations of persistent currents.

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The binding energies of excitons bound to neutral donors in two-dimensional (2D) semiconductors within the spherical-effective-mass approximation, which are nondegenerate energy bands, have been calculated by a variational method for a relevant range of the effective electron-to-hole mass ratio sigma. The ratio of the binding energy of a 2D exciton bound to a neutral donor to that of a 2D neutral donor is found to be from 0.58 to 0.10. In the limit of vanishing sigma and large sigma, the results agree fairly well with previous experimental results. The results of this approach are compared with those of earlier theories.

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The energy spectrum and the persistent currents are calculated for a finite-width mesoscopic annulus with radial potential barrier, threading a magnetic flux through the hole of the ring. Owing to the presence of tunneling barrier, the coupling effect leads to the splitting of each radial energy subband of individual concentrical rings into two one. Thus, total currents and currents carried by single high-lying eigenstate as a function of magnetic flux exhibit complicated patterns. However, periodicity and antisymmetry of current curves in the flux still preserve.

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We report on a magnetophotoluminescence study of single self-assembled semiconductor nanorings which are fabricated by molecular-beam epitaxy combined with AsBr3 in situ etching. Oscillations in the neutral exciton radiative recombination energy and in the emission intensity are observed under an applied magnetic field. Further, we control the period of the oscillations with a gate potential that modifies the exciton confinement. We infer from the experimental results, combined with calculations, that the exciton Aharonov-Bohm effect may account for the observed effects.

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The energy spectrum and the persistent currents are calculated for finite-width mesoscopic annular structures with radial potential barrier in the presence of a magnetic field. The introduction of the tunneling barrier leads to the creation of extra edge states around the barrier and the occurrence of oscillatory structures superimposed on the bulk Landau level plateaus in the energy spectrum. We found that the Fermi energy E-F increases with the number of electrons N emerging many kinks. The single eigenstate persistent current exhibits complicated structures with vortex-like texture, ''bifurcation'', and multiple ''furcation'' patterns as N is increased. The total currents versus N display wild fluctuations.