55 resultados para network-on-chip,deadlock, message-dependent-deadlock,NoC


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An on-chip disk electrode based on sol-gel-derived carbon composite material could be easily and reproducibly fabricated. Unlike other carbon-based electrodes reported previously, this detector is rigid, convenient to fabricate, and amenable to chemical modifications. Based on the stable and reproducible characters of this detector, a copper particle-modified detector was developed for the detection of carbohydrates which extends the application of the carbon-based electrode. In our experiments, the performance of the new integrated detector for rapid on-chip measurement of epinephrine and glucose was illustrated. Experimental procedures including the fabrication of this detector, the configuration of separation channel outlet and electrode verge, and the performance characteristics of this new electrochemical detector were investigated.

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A discrete slip model which characterizes the inhomogeneity of material properties in ductile single crystals is proposed in this paper. Based on this model rate-dependent finite element investigations are carried out which consider the finite deformation, finite rotation, latent hardening effect and elastic anisotropy. The calculation clearly exhibits the process from microscopic inhomogeneous and localized deformation to necking and the formation of LSBS and reveals several important features of shear localization. For example, the inhomogeneous deformation is influenced by the imperfections and initial non-uniformities of material properties. The inhomogeneous deformation may either induce necking which results in the lattice rotation and leads to geometrical softening, which in turn promotes the formation of CSBS, or induces heavily localized deformation. The microscopic localized deformation eventually develops into the LSBS and results in a failure. These results are in close agreement with experiment. Our calculations also find that the slip lines on the specimen's surface at necking become curved and also find that if the necking occurs before the formation of LSBS, this band must be misoriented from the operative slip systems. In this case, the formation of LSBS must involve non-crystallographic effects. These can also be indirectly confirmed by experiment. All these suggest that our present discrete slip model offers a correct description of the inhomogeneous deformation characterization in ductile crystals.

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The formation of memory is believed to depend on experience- or activity-dependent synaptic plasticity, which is exquisitely sensitive to psychological stress since inescapable stress impairs long-term potentiation (LTP) but facilitates long-term depression (LTD). Our recent studies demonstrated that 4 days of opioid withdrawal enables maximal extents of both hippocampal LTP and drug-reinforced behavior; while elevated-platform stress enables these phenomena at 18 h of opioid withdrawal. Here, we examined the effects of low dose of morphine (0.5 mg kg(-1), i.p.) or the opioid receptor antagonist naloxone (1 mg kg(-1), i.p.) on synaptic efficacy in the hippocampal CA1 region of anesthetized rats. A form of synaptic depression was induced by low dose of morphine or naloxone in rats after 18 h but not 4 days of opioid withdrawal. This synaptic depression was dependent on both N-methyl-D-aspartate receptor and synaptic activity, similar to the hippocampal long-term depression induced by low frequency stimulation. Elevated-platform stress given 2 h before experiment prevented the synaptic depression at 18 h of opioid withdrawal; in contrast, the glucocorticoid receptor (GR) antagonist RU38486 treatment (20 mg kg(-1), s.c., twice per day for first 3 days of withdrawal), or a high dose of morphine reexposure (15 mg kg(-1), s.c., 12 h before experiment), enabled the synaptic depression on 4 days of opioid withdrawal. This temporal shift of synaptic depression by stress or GR blockade supplements our previous findings of potentially correlated temporal shifts of LTP induction and drug-reinforced behavior during opioid withdrawal. Our results therefore support the idea that stress experience during opioid withdrawal may modify hippocampal synaptic plasticity and play important roles in drug-associated memory. (C) 2009 Wiley-Liss, Inc.

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A compact eight-channel flat spectral response arrayed waveguide grating (AWG) multiplexer based on siliconon-insulator (SOI) materials has been fabricated on the planar lightwave circuit (PLC). The 1-dB bandwidth of 48 GHz and 3-dB bandwidth of 69 GHz are obtained for the 100 GHz channel spacing. Not only non-adjacent crosstalk but also adjacent crosstalk are less than -25 dB. The on-chip propagation loss range is from 3.5 to 3.9 dB, and the 2 total device size is 1.5 x 1.0 cm(2). (c) 2005 Elsevier B.V. All rights reserved.

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This paper presents a wide tuning range CMOS frequency synthesizer for dual-band GPS receiver, which has been fabricated in a standard 0.18-um RF CMOS process. With a high Q on-chip inductor, the wide-band VCO shows a tuning range from 2 to 3.6GHz to cover 2.45GHz and 3.14GHz in case of process corner or temperature variation, with a current consumption varying accordingly from 0.8mA to 0.4mA, from a 1.8V supply voltage. The measurement results show that the whole frequency synthesizer costs a very low power consumption of 5.6mW working at L I band with in-band phase noise less than -82dBc/Hz and out-of-band phase noise about -112 dBc/Hz at 1MHz offset from a 3.142GHz carrier.

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A continuous-time 7th-order Butterworth Gm-C low pass filter (LPF) with on-chip automatic tuning circuit has been implemented for a direct conversion DBS tuner in a 0.35um SiGe BiCMOS technology. The filter's -3dB cutoff frequency f(0) can be tuned from 4MHz to 40MHz. A novel translinear transconductor (Gm) cell is used to implement the widely tunable and high linear filter. The filter has -0.5dB passband gain, 28nV/Hz(1/2) input referred noise, -2dBVrms passband IIP3, 24dBVrms stopband IIP3. The I/Q LPFs with the tuning circuit draw 16mA (with f(0)=20MHz) from 3.3 V supply, and occupy an area of 0.45 mm(2).

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The prototype wafer of a low power integrated CMOS Transmitter for short-range biotelemetry application has been designed and fabricated, which is prospective to be implanted in the human brain to transfer the extracted neural information to the external computer. The transmitter consists of five parts, a bandgap current regulator, a ring oscillator, a buffer, a modulator and a power transistor. High integration and low power are the most distinct criteria for such an implantable integrated circuit. The post-simulation results show that under a 3.3 V power supply the transmitter provides 100.1 MHz half-wave sinusoid current signal to drive the off-chip antenna, the output peak current range is -0.155 mA similar to 1.250 mA, and on-chip static power dissipation is low to 0.374 mW. All the performances of the transmitter satisfy the demands of wireless real-time BCI system for neural signals recording and processing.

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A continuous-time 7th-order Butterworth Gm-C low pass filter (LPF) with on-chip automatic tuning circuit has been implemented for a direct conversion DBS tuner in 0.35μm SiGe BiCMOS technology. The filter's -3 dB cutoff frequency f0 can be tuned from 4 to 40 MHz. A novel on-chip automatic tuning scheme has been successfully realized to tune and lock the filter's cutoff frequency. Measurement results show that the filter has -0.5 dB passband gain, +/- 5% bandwidth accuracy, 30 nV/Hz~(1/2) input referred noise, -3 dBVrms passband IIP3, and 27 dBVrms stopband IIP3. The I/Q LPFs with the tuning circuit draw 13 mA (with f_0 = 20 MHz) from 5 V supply, and occupy 0.5 mm~2.

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光互连是突破传统微电子IC性能瓶颈的重要技术手段,对推进"后摩尔时代"微电子技术的发展和高性能计算技术的实现具有关键性意义.本文在归纳总结不同层次光互连结构特点的基础上,对片上光互连(on-chip or intra-chip optical interconnects)所涉及的若干种无源光子集成器件的设计制备及性能特点进行了分析介绍,这些器件包括SOI亚波长光子线波导、SOI光子晶体波导、MMI分束/合束器、微环/微盘谐振腔滤波器、光子晶体微腔耦合滤波器、光子晶体反射镜等,是硅基片上光互连的基本构成单元.本文对这些关键性光子集成器件的国内最新研究进展进行了报道.

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This paper presents a wide tuning range CMOS frequency synthesizer for a dual-band GPS receiver,which has been fabricated in a standard 0.18μm RF CMOS process. With a high Q on-chip inductor, the wide-band VCO shows a tuning range from 2 to 3.6GHz to cover 2.45 and 3.14GHz in case of process corner or temperature variation,with a current consumption varying accordingly from 0.8 to 0.4mA,from a 1.8V supply voltage. Measurement results show that the whole frequency synthesizer consumes very low power of 5.6mW working at L1 band with in-band phase noise less than - 82dBc/Hz and out-of-band phase noise about - ll2dBc/Hz at 1MHz offset from a 3. 142GHz carrier. The performance of the frequency synthesizer meets the requirements of GPS applications very well.

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A compact direct digital frequency synthesizer (DDFS) for system-on-chip implementation of the high precision rubidium atomic frequency standard is developed. For small chip size and low power consumption, the phase to sine mapping data is compressed using sine symmetry technique, sine-phase difference technique, quad line approximation technique,and quantization and error read only memory (QE-ROM) technique. The ROM size is reduced by 98% using these techniques. A compact DDFS chip with 32bit phase storage depth and a 10bit on-chip digital to analog converter has been successfully implemented using a standard 0.35μm CMOS process. The core area of the DDFS is 1.6mm^2. It consumes 167mW at 3.3V,and its spurious free dynamic range is 61dB.

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Three kinds of TiO2 nanostructured thin films and their CdS-sensitized films, consisting of different sizes of TiO2 nanoparticles prepared with different methods, have been investigated. The surface photovoltage spectra (SPS) measurements indicate that the density of surface states on TiO2 is likely dependent upon the details of prepared methods. TiO2 particles prepared from basic sol have more surface states than that prepared from acidic sol. When the TiO2 thin films prepared using the TiO2 sols were sensitized by CdS particles, the SPS responses relative to the surface states on TiO2 from 350 to 800 nm were decreased. The photoelectrochemical properties of nanostructured TiO2 electrodes suggest that the fewer the surface states and the smaller the particle sizes of TiO2, the larger the photocurrent response. For CdS sensitized TiO2 thin film electrode, it is shown that the semiconductor sensitization is an efficient way to decrease the influence of surface states on the charge separation, and can improve the intensity of photocurrent response. (C) 2001 Elsevier Science B.V. All rights reserved.

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针对超大规模集成电路和片上系统设计中确定异步FIFO浓度的问题,根据异步FIFO运行时的属性提出FIFO动态参数模型,该模型包括FIFO饱和度、写入端和读出端数据传输率及上溢/下溢频率。在该模型的基础之上,分析异步FIFO的深度与动态参数之间的关系,采用功能仿真方法确定片上系统中异步模块之间数据传输所需FIFO的深度。对典型实例的分析表明,采用这种方法能够在保证系统数据通信性能的前提下,获得最小的FIFO深度,优化系统资源的使用。

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本文针对基于Agent的分布协作式多机器人装配系统——DAMAS的特点,在原有工作的基础上,提出了网络环境下基于Agent的路径规划思想,重新定义Agent各功能模块的内容,建立系统中的通讯机制.同时,介绍了系统进行路径规划的工作过程,给出了路径规划器的规划算法

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The practical application and development of the time-lapse seismic reservoir monitor technology has indicated which has already become one of most important development technologies in seeking the surplus oil distribution and improving the reservoir recovering. The paper, first obtained the rock physics experiment analysis data according to the Bohai Sea loose sandstone in-situ measure technical, and determined the feasibility research of the S oil-field on the time-lapse seismic reservoir monitoring combining with the time-lapse numeric simulation technology, which was used to analyze the time-lapse seismic respond raw of the reservoir parameters change and pointed out the attentive problems during the real time-lapse seismic processing and interpretation. Next, simply introduced the technical link and the effect of the time-lapse mutual constrained fidelity and match processing aiming at the local complex gathering condition, geological condition, development engineering condition. Third, introduced the time-lapse integrated interpretation and the technical system with the innovative key technology that includes the time-lapse difference explanation technology, the time-lapse seismic multi-attributes integrated interpretation technology, and the time-lapse constrained reservoir parameters inversion technology, and so on. Using the time-lapse difference direct explanation technology, directly obtained the surplus oil macroscopic distribution through the difference seismic data; Using the presenting 8 big principles of the sublayer isochronisms comparison, carried on the time-lapse integrated interpretation analysis on the fine sublayer comparison and the thin oil-layer(group) contrast and the oil layer (group); The paper putted up the research, contrast, applications of the multi-sides sensitive attribute analysis and the RBF nerve network on the nearest study algorithm, and predicted the reservoir parameters and the surplus oil distribution with them; Combining with innovative researches and the time-lapse seismic constrained reservoir parameters inversion technology realized the good combination of the seismic and the reservoir engineering. Fourth, under fully analyzing the geology condition, the reservoir condition, the exploit dynamic data, and the seismic data of the S oil-field, and analyzing the time-lapse difference factors with reservoir dynamic exploit data, calibrated the oil-gas saturation change, the pressure change, the water saturation change, and determined the rationality of the time-lapse seismic difference, and finally obtained the surplus oil distribution, the water flood characteristic understanding, reservoir degasification, and pressure drop raw, and so on, which had been used in the well pattern tightening plan proof of the S oil-field development adjustment plan. Finally, the paper summarized the knowledge and understanding of the marine time-lapse seismic integrated interpretation, also had pointed out the further need researched question.